Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
11/2008
11/06/2008DE102008021093A1 Memory i.e. multi-level phase change RAM, for use in e.g. laptop computer, has memory cells selected for read operation in order to restore resistance before read operation of memory cell in proximity of initial resistance
11/06/2008DE102008011514A1 Steuerschaltung einer Flash-Speichervorrichtung und Verfahren zum Betreiben der Flash-Speichervorrichtung Control circuit of a flash memory device and method of operating the flash memory device
11/05/2008EP1988550A1 Non-volatile memory with rotating auxiliary sectors
11/05/2008EP1988549A1 Non-volatile memory with partial deletion
11/05/2008EP1988548A1 Non-volatile memory with quick writing
11/05/2008EP1540710A4 Nanocrystal electron device
11/05/2008EP1344221B1 Word line decoding architecture in a flash memory
11/05/2008CN201146055Y Flash memory microcontroller
11/05/2008CN101300554A Recovering from a non-volatile memory failure
11/05/2008CN101299454A Method for preparing nano composite phase-changing material
11/05/2008CN101299453A Nano composite phase-changing material and preparation method thereof
11/05/2008CN101299430A Non-volatile memory and manufacturing method and operating method thereof and circuit system including the non-volatile memory
11/05/2008CN101299350A Charge trapping memory structure and programming method thereof
11/05/2008CN101299349A Erase handling method for non-volatile memory and electronic apparatus thereof
11/05/2008CN101299346A High voltage generator circuit and flash device including the same
11/05/2008CN100431156C Semiconductor memory device, semiconductor device, and portable electronic apparatus
11/05/2008CN100431056C Non-volatile memory test structure and method
11/05/2008CN100431055C Enhanced special programming mode
11/05/2008CN100431054C ROM storage unit circuit with energy recovery structure
11/05/2008CN100431053C Voltage generating circuit
11/05/2008CN100431052C Semiconductor IC device and method for generating read out starting action signal
11/05/2008CN100431051C Method for configuring parameter in NOR FLASH
11/05/2008CN100431050C Erasable and programmable non-volatile cell
11/05/2008CN100431045C Non-volatile semiconductor memory
11/05/2008CN100431044C Memory
11/05/2008CN100431039C Reading circuit for reading a memory cell
11/04/2008US7447959 Semiconductor integrated circuit and a method of testing the same
11/04/2008US7447936 Nonvolatile memory system
11/04/2008US7447092 Write driver circuit for controlling a write current applied to a phase change memory based on an ambient temperature
11/04/2008US7447087 Semiconductor memory device having memory block configuration
11/04/2008US7447082 Method for operating single-poly non-volatile memory device
11/04/2008US7447081 Methods for improved program-verify operations in non-volatile memories
11/04/2008US7447080 Method and device for checking the execution of a write command for writing in a memory
11/04/2008US7447079 Method for sensing negative threshold voltages in non-volatile storage using current sensing
11/04/2008US7447078 Method for non-volatile memory with background data latch caching during read operations
11/04/2008US7447076 Systems for reverse reading in non-volatile memory with compensation for coupling
11/04/2008US7447075 Charge packet metering for coarse/fine programming of non-volatile memory
11/04/2008US7447073 Method for handling a defective top gate of a source-side injection flash memory array
11/04/2008US7447072 Storage device employing a flash memory
11/04/2008US7447070 Highly compact non-volatile memory and method therefor with internal serial buses
11/04/2008US7447069 Flash EEprom system
11/04/2008US7447068 Method for programming a multilevel memory
11/04/2008US7446368 Deposition of metal oxide and/or low asymmetrical tunnel barrier interpoly insulators
10/2008
10/30/2008WO2008129534A1 Adaptive dynamic reading of flash memories
10/30/2008WO2008129533A1 Adaptive dynamic reading of flash memories
10/30/2008WO2008129478A1 Nonvolatile memory cell comprising a nanowire and manufacturing method thereof
10/30/2008WO2008093257A3 Method of protecting against attacks and circuit therefor
10/30/2008US20080266983 Flash memory device and method of erasing flash memory device
10/30/2008US20080266982 Channel discharging after erasing flash memory devices
10/30/2008US20080266976 Nand memory device and programming methods
10/30/2008US20080266972 Programming a non-volatile memory device
10/30/2008US20080266971 Programming a flash memory device
10/30/2008US20080266969 Method of operating non-volatile memory
10/30/2008US20080266968 Charge pump circuit, semiconductor memory device, and method for driving the same
10/30/2008US20080266967 Nonvolatile semiconductor memory
10/30/2008US20080266965 Nonvolatile semiconductor memory having plural data storage portions for a bit line connected to memory cells
10/30/2008US20080266962 Flash memory device and flash memory system
10/30/2008US20080266961 Non-volatile memory device and method of programming in the same
10/30/2008US20080266959 Memory array of floating gate-based non-volatile memory cells
10/30/2008US20080266958 Flash memory array of floating gate-based non-volatile memory cells
10/30/2008US20080266957 Method for Column Redundancy Using Data Latches in Solid-State Memories
10/30/2008US20080266956 Flash memory device and method of controlling flash memory device
10/30/2008US20080266955 Sram cell controlled by flash memory cell
10/30/2008US20080266954 Transition areas for dense memory arrays
10/30/2008US20080266953 Single latch data circuit in a multiple level cell non-volatile memory device
10/30/2008US20080266952 Memory array architecture for a memory device and method of operating the memory array architecture
10/30/2008US20080266951 Non-volatile memory device and program method
10/30/2008US20080266950 Data path circuit in a flash memory device
10/30/2008US20080266948 Memory system, program method thereof, and computing system including the same
10/30/2008US20080266947 Bit-Symbol Recognition Method and Structure for Multiple-Bit Storage in Non-Volatile Memories
10/30/2008US20080266946 Method of managing a multilevel memory device and related device
10/30/2008US20080266924 Nand interface
10/30/2008DE102008010713A1 Phasenwechselspeichereinrichtung Phase change memory device
10/30/2008DE102007059142B3 Verfahren zum Speichern eines Datums in einer Speichereinrichtung und Speichereinrichtung A method of storing a data item in a storage device and storage device
10/29/2008EP1984923A2 Flash memory with coding and signal processing
10/29/2008EP1984827A1 An electronic device having a memory element and method of operation therefor
10/29/2008EP1922743A4 Method and system of using nanotube fabrics as joule heating elements for memories and other applications
10/29/2008EP1409237B1 Dual-cell soft programming for virtual-ground memory arrays
10/29/2008CN201142229Y Flash memory array device
10/29/2008CN101297372A Method and apparatus for programming/erasing a non-volatile memory
10/29/2008CN101296571A Memory body device manufacturing carrier tool, manufacturing method and memory body device
10/29/2008CN101295729A Integrated circuit including spacer material layer
10/29/2008CN101295716A Channel type side wall floating grid structure flash memory and its use method
10/29/2008CN101295545A Methods for conducting double-side-biasing operations of nand memory arrays
10/29/2008CN101295544A Methods of biasing a multi-level-cell memory
10/29/2008CN101295543A Methods for reducing write time in nonvolatile memory devices and related devices
10/29/2008CN101295542A Control circuit of flash memory device and method of operating the flash memory device
10/29/2008CN101295541A Operation method of non-volatile memory
10/29/2008CN101295540A Methods for enhancing retention characteristics of memory devices
10/29/2008CN100429725C Programming method of a non-volatile memory device having a charge storage layer
10/29/2008CN100429723C Semiconductor memory
10/28/2008US7444563 Multilevel semiconductor memory, write/read method thereto/therefrom and storage medium storing write/read program
10/28/2008US7444460 Data storage device, method for updating management information in data storage device, and computer program
10/28/2008US7443757 Non-volatile memory and method with reduced bit line crosstalk errors
10/28/2008US7443736 Substrate electron injection techniques for programming non-volatile charge storage memory cells and for controlling program disturb
10/28/2008US7443735 Method of reducing wordline recovery time
10/28/2008US7443731 Semiconductor nonvolatile memory device
10/28/2008US7443730 Flash memory device including blocking voltage generator
10/28/2008US7443728 NAND flash memory device and method of programming same
10/28/2008US7443726 Systems for alternate row-based reading and writing for non-volatile memory