Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
02/2009
02/04/2009CN101359718A Phase change memory device and method of fabricating the same
02/04/2009CN101359717A Resistor random access memory structure having a defined small area of electrical contact
02/04/2009CN101359666A Non-volatile dram with floating gate and method of operation
02/04/2009CN101359508A Non-volatile memory control device
02/04/2009CN101359507A Nonvolatile storage location based on low pressure technology, array and operation method
02/04/2009CN101359506A Non-volatile memory devices and programming methods thereof
02/04/2009CN101359505A Read isolation programmable memory unit and programming and reading method thereof
02/04/2009CN101359504A High speed recording phase change memory and high speed recording method thereof
02/04/2009CN101359503A Resistance conversing memory and storage operation method thereof
02/04/2009CN101359502A Storage scheme for novel high-density multi-value phase change memory
02/04/2009CN100458978C Universal memory device having a profile storage unit
02/04/2009CN100458977C Apparatus and method for adaptive controlling flash storage interface reading and writing speed
02/04/2009CN100458976C ROM unit and ROM
02/04/2009CN100458975C Flash memory device with reduced access time
02/04/2009CN100458971C Programmable metallic oxide semiconductor storage circuit and recording and reading method
02/04/2009CN100458970C Embedded memory unit structure and memory device system structure and operation method
02/04/2009CN100458969C Memory
02/04/2009CN100458674C Flash EEPROM system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
02/03/2009US7487286 Flash memory and method for controlling the memory
02/03/2009US7486827 Efficient and robust algorithm for video sequence matching
02/03/2009US7486567 Method for high speed programming of a charge trapping memory with an enhanced charge trapping site
02/03/2009US7486566 Methods, apparatus, and systems for flash memory bit line charging
02/03/2009US7486565 Semiconductor memory device with memory cells each including a charge accumulation layer and a control gate
02/03/2009US7486563 Sense amplifier circuitry and architecture to write data into and/or read from memory cells
02/03/2009US7486560 Apparatus and associated method for making a virtual ground array structure that uses inversion bit lines
02/03/2009US7486559 Non-volatile semiconductor memory device
02/03/2009US7486557 Methods/circuits for programming flash memory devices using overlapping bit line setup and word line enable intervals
02/03/2009US7486556 Semiconductor memory
02/03/2009US7486555 Flash memory cell arrays having dual control gates per memory cell charge storage element
02/03/2009US7486554 NAND flash memory devices having shielding lines between wordlines and selection lines
02/03/2009US7486530 Method of comparison between cache and data register for non-volatile memory
02/03/2009US7485891 Multi-bit phase change memory cell and multi-bit phase change memory including the same, method of forming a multi-bit phase change memory, and method of programming a multi-bit phase change memory
02/03/2009US7485529 Method of fabricating non-volatile memory
02/03/2009US7485527 Nonvolatile semiconductor storage device and its manufacturing method
02/03/2009US7485513 One-device non-volatile random access memory cell
01/2009
01/29/2009WO2009015313A1 Programming based on controller performance requirements
01/29/2009WO2009015312A1 Programming multilevel cell memory arrays
01/29/2009WO2009015297A1 Multistate nonvolatile memory elements
01/29/2009WO2009013879A1 Memory controller and non-volatile storage device using same
01/29/2009WO2009013731A1 Power failure protection method and circuit for non- volatile semiconductor storage device
01/29/2009US20090029511 NOR-type channel-program channel-erase contactless flash memory on SOI
01/29/2009US20090027972 Wordline driver for a non-volatile memory device, a non-volatile memory device and method
01/29/2009US20090027971 Apparatuses, computer program products and methods for reading data from memory cells
01/29/2009US20090027970 Programming based on controller performance requirements
01/29/2009US20090027969 Method of using hot-carrier-injection degradation as a programmable fuse/switch
01/29/2009US20090027968 Nand flash memory device and method of operating the same
01/29/2009US20090027967 Non-volatile memory device programming selection transistor and method of programming the same
01/29/2009US20090027965 Row selector circuit for electrically programmable and erasable non volatile memories
01/29/2009US20090027964 Semiconductor memory device having plural word lines arranged at narrow pitch and manufacturing method thereof
01/29/2009US20090027963 High performance multi-level non-volatile memory device
01/29/2009US20090027962 Multiple level cell memory device with single bit per cell, re-mappable memory block
01/29/2009US20090027961 Non-volatile memory cell programming method
01/29/2009US20090027960 Cell deterioration warning apparatus and method
01/29/2009US20090027957 Voltage supply circuit and flash memory device including the same, and method of supplying operating voltage
01/29/2009US20090026528 Flash Memory Cell and Method of Manufacturing the Same and Programming/Erasing Reading Method of Flash Memory Cell
01/29/2009DE102008034504A1 Verfahren zum Verwenden von Heiß-Träger-Injektion-Degradation als programmierbare Sicherung/programmierbarer Schalter Methods of using hot-carrier injection degradation as programmable fuse / programmable switch
01/29/2009DE102008033511A1 Verfahren zum Programmieren eines Flashspeichers, Flashspeicher und Flashspeichersystem A method of programming a flash memory, flash memory and flash memory system
01/29/2009DE102004059350B4 Nichtflüchtiges Halbleiterspeicherbauelement The non-volatile semiconductor memory device
01/28/2009EP1527456B1 Refreshing memory cells of a phase change material memory device
01/28/2009CN101356627A Enhanced multi-volatile memory device with resonant tunnel barrier
01/28/2009CN101356587A Last-first mode and method for programming of non-volatile memory of NAND type with reduced program disturb
01/28/2009CN101355030A Method for manufacturing memory bank, memory device as well as method for operating and accessing the memory device
01/28/2009CN101354923A Voltage converter circuit and flash memory device having the same
01/28/2009CN101354922A Voltage supply circuit and flash memory device including the same, and method of supplying operating voltage
01/28/2009CN101354921A Non-volatile memory device programming selection transistor and method of programming the same
01/28/2009CN101354920A Non-volatile memory cell programming method
01/28/2009CN101354919A Method for programming multi-order unit memory
01/28/2009CN101354918A Storage device and method for using blicks of a rapid flash type memory with average
01/28/2009CN101354917A Non-volatile memory devices including stacked nand-type resistive memory cell strings and methods of fabricating the same
01/28/2009CN101354916A Phase change memory device
01/28/2009CN101354915A Phase change device, memory system using the same and method for reading the memory device
01/28/2009CN101354912A Method for driving phase change memory device
01/28/2009CN101354910A Read operation method for novel phase-changing memory
01/28/2009CN100456514C Single-layer organic memory and mfg. method thereof
01/28/2009CN100456479C Anti-fuse once-programmable nonvolatile memory unit and method for manufacture and programming thereof
01/28/2009CN100456390C Multi-pattern multi-stage charge pump
01/28/2009CN100456389C Sense amplifier for multilevel non-volatile integrated memory devices
01/28/2009CN100456388C Method and apparatus for soft program verification in a memory device
01/27/2009US7484035 Microcomputer with built-in flash memory
01/27/2009US7483312 Memory configuration of a composite memory device
01/27/2009US7483311 Erase operation in a flash memory device
01/27/2009US7483310 System and method for providing high endurance low cost CMOS compatible EEPROM devices
01/27/2009US7483309 Programming and erasing method for charge-trapping memory devices
01/27/2009US7483308 Programming and erasing method for charge-trapping memory devices
01/27/2009US7483307 Method and apparatus for sensing in charge trapping non-volatile memory
01/27/2009US7483306 Fast and accurate sensing amplifier for low voltage semiconductor memory
01/27/2009US7483305 Method, apparatus and system relating to automatic cell threshold voltage measurement
01/27/2009US7483304 Semiconductor memory device capable of setting a negative threshold voltage
01/27/2009US7483303 Flash memory device with improved program performance and smart card including the same
01/27/2009US7483301 Nonvolatile memory devices that support virtual page storage using odd-state memory cells and methods of programming same
01/27/2009US7481518 Ink jet printhead integrated circuit with surface-processed thermal actuators
01/22/2009WO2009012204A1 Refresh of non-volatile memory cells based on fatigue conditions
01/22/2009WO2009011977A1 Dynamic voltage adjustment for memory
01/22/2009WO2009009865A1 Memory with data control
01/22/2009US20090021988 Nonvolatile memory device and method of operating fabricating the same
01/22/2009US20090021985 Internal voltage generator and control method thereof, and semiconductor memory device and system including the same
01/22/2009US20090021983 Word Line Compensation In Non-Volatile Memory Erase Operations
01/22/2009US20090021982 Semiconductor memory device and data erase method thereof
01/22/2009US20090021981 Nonvolatile memory device including circuit formed of thin film transistors
01/22/2009US20090021980 Non-volatile memory and operating method thereof