Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
11/2008
11/19/2008CN101308702A Data structure suitable for flash memory and data writing and reading method thereof
11/19/2008CN101308701A Apparatus and method of managing mapping table of non-volatile memory
11/19/2008CN100435354C Semiconductor device
11/19/2008CN100435340C Semiconductor memory device
11/19/2008CN100435339C ROM memory, its array, apparatus and method for programming and erasing
11/19/2008CN100435242C Method of recovering overerased bits in a memory device
11/19/2008CN100435241C Double-bit memory and a double-bit selected bit line decoding design and circuit
11/19/2008CN100435116C Non-volatile memory and method with memory planes alignment
11/19/2008CN100435115C Non-volatile memory and method with non-sequential update block management
11/18/2008US7454629 Electronic data processing device
11/18/2008US7454617 Apparatus for validating the presence of an authorized accessory
11/18/2008US7453741 Semiconductor device card providing multiple working voltages
11/18/2008US7453739 Semiconductor integrated circuit adapted to output pass/fail results of internal operations
11/18/2008US7453736 Methods of erasing and designing electrically erasable charge trap nonvolatile memory cells having erase threshold voltage that is higher than an initial threshold voltage
11/18/2008US7453735 Non-volatile memory and control with improved partial page program capability
11/18/2008US7453734 Method and apparatus for fast programming of memory
11/18/2008US7453732 Method for programming memory cells including transconductance degradation detection
11/18/2008US7453731 Method for non-volatile memory with linear estimation of initial programming voltage
11/18/2008US7453730 Charge packet metering for coarse/fine programming of non-volatile memory
11/18/2008US7453729 Bit line setup and discharge circuit for programming non-volatile memory
11/18/2008US7453728 Data storage system with enhanced reliability with respect to data destruction caused by reading-out of the data
11/18/2008US7453727 Nonvolatile semiconductor memory and method for setting replacement information in nonvolatile semiconductor memory
11/18/2008US7453724 Flash memory device having improved program rate
11/18/2008US7453723 Memory with weighted multi-page read
11/18/2008US7453118 Non-volatile semiconductor memory device
11/13/2008WO2008137755A1 Wear leveling
11/13/2008WO2008137687A1 Boosting for non-volatile storage using channel isolation switching
11/13/2008WO2008136907A1 Non-volatile multilevel memory cells with data read of reference cells
11/13/2008WO2008136813A2 Semiconductor memory having both volatile and non-volatile functionality and method of operating
11/13/2008WO2008136798A1 Nano-vacuum-tubes and their application in storage devices
11/13/2008WO2008136568A1 Multi-bit programming device and method of multi-bit programming
11/13/2008WO2008134858A1 Multi-level cell access buffer with dual function
11/13/2008WO2008082824A3 Multi-level operation in dual element cells using a supplemental programming level
11/13/2008WO2007109423A3 Non-volatile memory with controlled program/erase
11/13/2008US20080279027 Thermally Stable Reference Voltage Generator for Mram
11/13/2008US20080279013 Multi-level non-volatile memory cell with high-VT enhanced BTBT device
11/13/2008US20080279012 Methods of Operating Memory Devices Including Negative Incremental Step Pulse Programming and Related Devices
11/13/2008US20080279011 Data processing apparatus
11/13/2008US20080279009 Nonvolatile Semiconductor Memory Device and Writing Method of the Same
11/13/2008US20080279006 Semiconductor memory device and electric power supply method
11/13/2008US20080279004 Charge-Trapping Memory Device and Methods for its Manufacturing and Operation
11/13/2008US20080279003 Multiple independent serial link memory
11/13/2008US20080279002 Methods of reading data including comparing current and previous section addresses and related devices
11/13/2008US20080279001 Operating method of non-volatile memory
11/13/2008US20080279000 Nonvolatile semiconductor memory
11/13/2008US20080278999 Source and drain side early boosting using local self boosting for non-volatile storage
11/13/2008DE102008023819A1 Verfahren zum Betrieb eines Speicherbauelements und elektronisches Bauelement A method of operating a memory device and electronic component
11/13/2008DE102007021256A1 Verfahren zum Speichern von Anwendungsdaten in einen Datenträger mit einem verschlüsselnden Speicher-Controller A method for storing application data in a data carrier having encrypted memory controller
11/12/2008EP1949542A4 Bit line pre-settlement circuit and method for flash memory sensing scheme
11/12/2008CN101303893A Non-volatile semiconductor storing device and programming method thereof
11/12/2008CN101303892A Methods of operating memory devices including negative incremental step pulse programming and related devices
11/12/2008CN101303891A Memory system, program method thereof, and computing system including the same
11/12/2008CN101303890A Methods of reading data including comparing current and previous section addresses and related devices
11/12/2008CN101303889A Memory cell and method for manufacturing non-volatile apparatus thereof
11/12/2008CN100433196C Read source line compensation in a non-volatile memory
11/12/2008CN100433195C Flash memory medium data writing method
11/12/2008CN100433194C Flash memory with flexible sectioning
11/12/2008CN100433193C Charge injection
11/12/2008CN100433192C System and method for using dynamic random access memory and flash memory
11/12/2008CN100432986C Quick programming/debugging apparatus
11/11/2008USRE40567 Flash memory device of capable of sensing a threshold voltage of memory cells on a page mode of operation
11/11/2008US7451368 Semiconductor device and method for testing semiconductor device
11/11/2008US7451266 Nonvolatile memory wear leveling by data replacement processing
11/11/2008US7451169 Method and apparatus for providing packed shift operations in a processor
11/11/2008US7450436 Device recoverable purge for flash storage device
11/11/2008US7450435 Systems for comprehensive erase verification in non-volatile memory
11/11/2008US7450434 Semiconductor device and its control method
11/11/2008US7450432 Method of programming data in a flash memory device
11/11/2008US7450431 PMOS three-terminal non-volatile memory element and method of programming
11/11/2008US7450430 Programming non-volatile memory with reduced program disturb by using different pre-charge enable voltages
11/11/2008US7450429 Method and apparatus for a dual power supply to embedded non-volatile memory
11/11/2008US7450427 Non-volatile semiconductor memory device
11/11/2008US7450423 Methods of operating non-volatile memory cells having an oxide/nitride multilayer insulating structure
11/11/2008US7450422 NAND architecture memory devices and operation
11/11/2008US7450421 Data pattern sensitivity compensation using different voltage
11/11/2008US7450420 Reclaiming data storage capacity in flash memories
11/11/2008US7450419 Semiconductor device and control method therefor
11/11/2008US7450417 Nonvolatile semiconductor memory device
11/11/2008US7449747 Semiconductor memory device
11/11/2008US7449746 EEPROM with split gate source side injection
11/06/2008WO2008134481A1 Nand interface
11/06/2008WO2008134396A1 Programming and/or erasing a memory device in response to its program and/or erase history
11/06/2008WO2008134253A1 Reducing power consumption during read operations in non-volatile storage
11/06/2008WO2008133040A1 Semiconductor device
11/06/2008WO2008132971A1 Semiconductor memory
11/06/2008WO2008106778B1 Partial block erase architecture for flash memory
11/06/2008WO2008098363A8 Non-volatile memory with dynamic multi-mode operation
11/06/2008WO2008089157A3 Column leakage compensation in a sensing circuit
11/06/2008WO2008049497A8 Method and device for incrementing the counter readings stored in the memory cells of a memory
11/06/2008WO2007112201A9 Non-volatile memory and method with redundancy data buffered in data latches for defective locations
11/06/2008US20080273401 Method of erasing a block of memory cells
11/06/2008US20080273400 Fast erasable non-volatile memory
11/06/2008US20080273399 Single-poly non-volatile memory
11/06/2008US20080273396 Nonvolatile semiconductor memory device
11/06/2008US20080273393 Programmable Heavy-Ion Sensing Device for Accelerated Dram Soft Error Detection
11/06/2008US20080273392 Method of programming a selected memory cell
11/06/2008US20080273389 Flash memory cells, NAND cell units, methods of forming NAND cell units, and methods of programming NAND cell unit strings
11/06/2008US20080273387 Nonvolatile Semiconductor Storage Device and Method for Writing Therein
11/06/2008US20080273386 Multi-level cell access buffer with dual function
11/06/2008US20080273383 High voltage generator circuit and flash memory device including the same