Patents for G11C 16 - Erasable programmable read-only memories (44,373) |
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07/01/2008 | US7394699 Sense amplifier for a non-volatile memory device |
07/01/2008 | US7394698 Method and apparatus for adjusting a read reference level under dynamic power conditions |
07/01/2008 | US7394697 Nonvolatile semiconductor memory device which stores multi-value information |
07/01/2008 | US7394695 Nonvolatile semiconductor memory having plural data storage portions for a bit line connected to memory cells |
07/01/2008 | US7394692 Non-volatile semiconductor memory with large erase blocks storing cycle counts |
07/01/2008 | US7394690 Method for column redundancy using data latches in solid-state memories |
07/01/2008 | US7394688 Nonvolatile memory |
07/01/2008 | US7394090 Non-volatile memory and the fabrication method |
07/01/2008 | US7393747 Nonvolatile semiconductor memory and a fabrication method thereof |
06/26/2008 | WO2008077125A1 Erasing flash memory using adaptive drain and/or gate bias |
06/26/2008 | WO2008076988A1 High speed fanned out system architecture and input/output circuits for non-volatile memory |
06/26/2008 | WO2008076978A1 Dual-bit memory device having trench isolation material disposed near bit line contact areas |
06/26/2008 | WO2008076656A1 Erase method for a memory including soft programming |
06/26/2008 | WO2008076553A2 Column redundancy for a flash memory with a high write parallelism |
06/26/2008 | WO2008075351A2 Soft decoding of hard and soft bits read from a flash memory |
06/26/2008 | WO2008074212A1 Method for controlling flash memory |
06/26/2008 | WO2008074126A1 Id generation apparatus and method for serially interconnected devices |
06/26/2008 | US20080155380 Increasing the Effectiveness of Error Correction Codes and Operating Multi-Level Memory Systems by Using Information About the Quality of the Stored Data |
06/26/2008 | US20080155184 Methods and apparatus for writing data to non-volatile memory |
06/26/2008 | US20080151645 Operating method of non-volatile memory |
06/26/2008 | US20080151644 Cycling improvement using higher erase bias |
06/26/2008 | US20080151643 Method and apparatus to create an erase disturb on a non-volatile static random access memory cell |
06/26/2008 | US20080151642 Double-Side-Bias Methods of Programming and Erasing a Virtual Ground Array Memory |
06/26/2008 | US20080151641 Non-volatile memory device reducing data programming and verification time, and method of driving the same |
06/26/2008 | US20080151640 Semiconductor integrated circuit device |
06/26/2008 | US20080151639 Flash memory device with external high voltage supply |
06/26/2008 | US20080151638 Selective threshold voltage verification and compaction |
06/26/2008 | US20080151637 Interleaved memory program and verify method, device and system |
06/26/2008 | US20080151636 Repetitive erase verify technique for flash memory devices |
06/26/2008 | US20080151635 Semiconductor memory devices and a method thereof |
06/26/2008 | US20080151634 Negative wordline bias for reduction of leakage current during flash memory operation |
06/26/2008 | US20080151633 Method of Programming in a Non-Volatile Memory Device and Non-Volatile Memory Device for Performing the Same |
06/26/2008 | US20080151632 Flash memory device having multi-level cell and reading and programming method thereof |
06/26/2008 | US20080151631 Non-volatile memory device and method of operating the same |
06/26/2008 | US20080151630 System for reducing wordline recovery time |
06/26/2008 | US20080151628 System for low voltage programming of non-volatile memory cells |
06/26/2008 | US20080151627 Method of low voltage programming of non-volatile memory cells |
06/26/2008 | US20080151625 Non-volatile semiconductor memory device allowing efficient programming operation and erasing operation in short period of time |
06/26/2008 | US20080151623 Non-Volatile Memory In CMOS Logic Process |
06/26/2008 | US20080151622 Command-based control of NAND flash memory |
06/26/2008 | US20080151620 Scheme of semiconductor memory and method for operating same |
06/26/2008 | US20080151617 Soft decoding of hard and soft bits read from a flash memory |
06/26/2008 | DE10338273B4 Halbleiterspeicherbauelement und Zugriffsverfahren hierfür The semiconductor memory device and access method thereof |
06/26/2008 | DE10227255B4 Verfahren zur Wiederherstellung von Verwaltungsdatensätzen eines blockweise löschbaren Speichers Process for the recovery of administrative records of a block-erasable memory |
06/26/2008 | DE102007009877B3 Memory array, particularly memory array with resistive memory elements, has multiple memory devices, multiple bit lines, multiple word lines and multiple additional lines |
06/26/2008 | DE10162860B4 Nichtflüchtiger Halbleiterspeicher sowie zugehöriges Programmierverfahren A non-volatile semiconductor memory and associated programming method |
06/26/2008 | CA2671184A1 Id generation apparatus and method for serially interconnected devices |
06/25/2008 | EP1936681A1 Non-volatile memory device and method of operating the same |
06/25/2008 | EP1936672A1 Electron blocking layers for gate stacks of nonvolatile memory devices |
06/25/2008 | EP1936632A1 Method and apparatus for detecting static data area, wear-leveling, and merging data units in nonvolatile data storage device |
06/25/2008 | EP1934985A2 Method and apparatus for programming/erasing a non-volatile memory |
06/25/2008 | EP1934741A2 Methods and apparatus for programming secure data into programmable and irreversible cells |
06/25/2008 | CN201078791Y Flash memory burning program apparatus |
06/25/2008 | CN201078790Y Burning program tool of quick flashing memory body |
06/25/2008 | CN101208754A Semiconductor device and method for controlling the same |
06/25/2008 | CN101208753A Method of achieving wear leveling in flash memory using relative grades |
06/25/2008 | CN101208752A Nonvolatile memory cell comprising a diode and a resistance-switching material |
06/25/2008 | CN101207178A Phase-change storage element and manufacturing method thereof |
06/25/2008 | CN101207157A Method for improving fixed hydrocarbon memory data erasing velocity |
06/25/2008 | CN101207153A Nonvolatile memory device and method of operating the same |
06/25/2008 | CN101207136A Non-volatile memory device and method of operating the same |
06/25/2008 | CN101207133A Multi-bit programmable non-volatile storage unit and design method thereof |
06/25/2008 | CN101207132A Flash memory unit and operating method thereof |
06/25/2008 | CN101206923A Method of programming multi-level cells and non-volatile memory device including the same |
06/25/2008 | CN101206922A Method of programming in a non-volatile memory device and non-volatile memory device for performing the same |
06/25/2008 | CN101206921A Method for reducing storage unit write-in disorder |
06/25/2008 | CN101206920A Method for reducing storage unit write-in disorder |
06/25/2008 | CN101206907A Circuit and method for inhibition of voltage dithering |
06/25/2008 | CN101205312A Organic memory device using iridium organ metallic compound and fabrication method thereof |
06/25/2008 | CN100397417C Memory card |
06/25/2008 | CN100397363C Data management appartus and method used for flash memory |
06/25/2008 | CN100397339C Integrated in-circuit programming device and method |
06/25/2008 | CN100397330C Semiconductor device |
06/24/2008 | US7392444 Non-volatile memory evaluating method and non-volatile memory |
06/24/2008 | US7391663 Structure and method for measuring the channel boosting voltage of NAND flash memory at a node between drain/source select transistor and adjacent flash memory cell |
06/24/2008 | US7391655 Data processing system and nonvolatile memory |
06/24/2008 | US7391654 Memory block erasing in a flash memory device |
06/24/2008 | US7391653 Twin insulator charge storage device operation and its fabrication method |
06/24/2008 | US7391652 Method of programming and erasing a p-channel BE-SONOS NAND flash memory |
06/24/2008 | US7391651 Method for programming NAND flash memory device and page buffer performing the same |
06/24/2008 | US7391650 Method for operating non-volatile memory using temperature compensation of voltages of unselected word lines and select gates |
06/24/2008 | US7391648 Low voltage sense amplifier for operation under a reduced bit line bias voltage |
06/24/2008 | US7391647 Non-volatile memory in CMOS logic process and method of operation thereof |
06/24/2008 | US7391646 Non-volatile memory and method with control gate compensation for source line bias errors |
06/24/2008 | US7391645 Non-volatile memory and method with compensation for source line bias errors |
06/24/2008 | US7391638 Memory device for protecting memory cells during programming |
06/24/2008 | US7391253 Power saving semiconductor integrated circuit device |
06/24/2008 | US7391072 Programmable array logic or memory with p-channel devices and asymmetrical tunnel barriers |
06/19/2008 | WO2008073421A2 Hybrid non-volatile solid state memory system |
06/19/2008 | WO2008055184A3 Programming pulse generator for nonvolatile nand-memory |
06/19/2008 | WO2008055183A3 Adaptive gate voltage regulation |
06/19/2008 | WO2008042598A3 Involatile memory with soft-input,soft-output (siso) decoder, statistical unit and adaptive operation |
06/19/2008 | WO2008039692A3 Memory with cell population distribution assisted read margining |
06/19/2008 | WO2008030351A3 Memory erase using discharching of charge storage device |
06/19/2008 | WO2008027966A3 Detecting radiation-based attacks |
06/19/2008 | WO2008026204A3 Logical super block mapping for nand flash memory |
06/19/2008 | WO2008023368A3 A nand flash memory controller exporting a logical sector-based interface |
06/19/2008 | US20080144396 Erasing flash memory using adaptive drain and/or gate bias |
06/19/2008 | US20080144395 Operating method of non-volatile memory |
06/19/2008 | US20080144393 Bit line pre-settlement circuit and method for flash memory sensing scheme |