Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
08/2008
08/07/2008US20080186778 Non-Volatile Memory Embedded In A Conventional Logic Process And Methods For Operating Same
08/07/2008US20080186776 Source side asymmetrical precharge programming scheme
08/07/2008US20080186775 Wordline voltage transfer apparatus, systems, and methods
08/07/2008US20080186774 High-endurance memory device
08/07/2008US20080186773 One or multiple-times programmable device
08/07/2008US20080186771 Nonvolatile semiconductor memory
08/07/2008US20080186770 Non-volatile memory device and method of compensating leakage reading current of a non-volatile memory array
08/07/2008US20080186768 Semiconductor memory device
08/07/2008US20080186767 Nonvolatile memory utilizing hot-carrier effect with data reversal function
08/07/2008US20080186766 Non-volatile semiconductor memory device
08/07/2008US20080186765 Semiconductor memory device
08/07/2008US20080186764 Nor architecture memory and operation method thereof
08/07/2008DE102008004290A1 Flash-Speicherbauelement mit Ladungseinfangschicht und Verfahren zur Herstellung desselben Of the same flash memory device with charge trapping layer and processes for preparing
08/07/2008DE102008003267A1 Hybrid flash memory component for e.g. digital camera, has control block selecting operation of error correcting code blocks such that control block operates in accordance with schemes, when command indicates data access procedure
08/07/2008DE102007003534A1 Memory cell e.g. non-volatile two-bit-Trapping layer-memory cell, operating method for e.g. memory card, involves applying voltage between gate electrode and substrate section such that charge carrier is injected into memory element
08/07/2008DE102004016408B4 Phasenwechselspeicherbaustein und zugehöriges Programmierverfahren Phase change memory device and associated programming method
08/06/2008EP1952404A2 Method and memory system for legacy hosts
08/06/2008EP1714290B1 Efficient verification for coarse/fine programming of non-volatile memory
08/06/2008CN101238524A Current or voltage measuring circuit, sense circuit, nonvolatile semiconductor memory, and differential amplifier
08/06/2008CN101237653A A realization method for compatible Nor Flash erasing on mobile phone
08/06/2008CN101237026A Memory cell having a side electrode
08/06/2008CN101237025A Nonvolatile memory devices and methods of fabricating the same
08/06/2008CN101236985A Memory cell device with coplanar electrode surface and method
08/06/2008CN101236970A Semiconductor component and memory and its operation method
08/06/2008CN101236787A Method for reading a memory array
08/06/2008CN101236786A Method for programming multi-level cell memory array
08/06/2008CN101236785A Method for improving the over erasure effect of charge capturing storage unit and its charge capturing memory structure
08/06/2008CN101236784A Data recording system
08/06/2008CN101236783A Semiconductor memory device with refresh trigger
08/06/2008CN101236782A Operation method for multi-level memory unit and integrated circuit for information storage
08/06/2008CN101236781A Method and apparatus for double-sided biasing of nonvolatile memory
08/06/2008CN101236780A Circuit design standard and implementation method for 3-D solid structure phase change memory chip
08/06/2008CN100409369C Voltage detection circuit control equipment and its memory control equipment and storage card
08/06/2008CN100409368C Programmed single unit switching device and integrate circuit
08/06/2008CN100409367C Multiple value flash memory writing-in and clearing mode
08/06/2008CN100409366C Storage circuit with redundant structure
08/05/2008US7409493 Top/bottom symmetrical protection scheme for flash
08/05/2008US7409489 Scheduling of reclaim operations in non-volatile memory
08/05/2008US7408834 Flash controller cache architecture
08/05/2008US7408811 NAND-type flash memory on an SOI substrate with a carrier discharging operation
08/05/2008US7408810 Minimizing effects of program disturb in a memory device
08/05/2008US7408809 Method and apparatus for programming single-poly pFET-based nonvolatile memory cells
08/05/2008US7408807 NAND string wordline delay reduction
08/05/2008US7408805 Reducing delays in word line selection
08/05/2008US7407857 Method of making a scalable flash EEPROM memory cell with notched floating gate and graded source region
08/05/2008US7407856 Method of manufacturing a memory device
07/2008
07/31/2008WO2008091894A1 Page-based failure management for flash memory
07/31/2008WO2008091590A1 Programming management data for nand memories
07/31/2008WO2008075351A3 Soft decoding of hard and soft bits read from a flash memory
07/31/2008WO2008073892A3 Reducing program disturb in non-volatile storage using early source-side boosting
07/31/2008WO2008073892A2 Reducing program disturb in non-volatile storage using early source-side boosting
07/31/2008WO2008073421A3 Hybrid non-volatile solid state memory system
07/31/2008WO2008070800B1 Apparatus, system, and method for storage space recovery in solid-state storage
07/31/2008WO2008067799A3 Memory cell, and method for storing data
07/31/2008WO2008063970A3 Operation nand non-volatile memory with boost electrodes
07/31/2008WO2007097933A3 Precision non-volatile cmos reference circuit
07/31/2008US20080181020 Erase operation control sequencing apparatus, systems, and methods
07/31/2008US20080181019 Semiconductor memory device capable of setting a negative threshold voltage
07/31/2008US20080181018 Memory system and control method thereof
07/31/2008US20080181017 Semiconductor memory device with refresh trigger
07/31/2008US20080181016 Semiconductor memory device with mos transistors each having floating gate and control gate and method of controlling the same
07/31/2008US20080181015 Memory systems and memory cards that use a bad block due to a programming failure therein in single level cell mode and methods of operating the same
07/31/2008US20080181013 Method for reading a memory array with a non-volatile memory structure
07/31/2008US20080181012 Memory Device with Adaptive Sense Unit and Method of Reading a Cell Array
07/31/2008US20080181011 Flash memory device capable of reduced programming time
07/31/2008US20080181010 Flash memory and method for determining logic states thereof
07/31/2008US20080181009 Semiconductor memory device and write method thereof
07/31/2008US20080181007 Semiconductor Device with Reduced Structural Pitch and Method of Making the Same
07/31/2008US20080181006 Method of programming memory cell
07/31/2008US20080181005 Semiconductor storage device having page copying function
07/31/2008US20080181004 Memory system and data reading and generating method
07/31/2008US20080181003 Increased NAND flash memory read throughput
07/31/2008US20080181001 Memory device with negative thresholds
07/31/2008US20080181000 Method Of Improving Programming Precision In Flash Memory
07/31/2008US20080180999 Method, system and circuit for operating a non-volatile memory array
07/31/2008US20080180998 Method of reading nand memory to compensate for coupling between storage elements
07/31/2008US20080180997 High voltage regulator for non-volatile memory device
07/31/2008US20080180996 Flash Memory With Improved Programming Precision
07/31/2008US20080179653 Semiconductor device and a method of manufacturing the same
07/31/2008DE102008003055A1 Flash-Speichervorrichtung und Verfahren zum Betreiben derselben A flash memory device and method of operating the same
07/31/2008DE102004036888B4 Flashspeichersystem und zugehöriges Datenschreibverfahren Flash memory system and associated data writing method
07/30/2008EP1949542A2 Bit line pre-settlement circuit and method for flash memory sensing scheme
07/30/2008EP1949384A2 Addressing, command protocol, and electrical interface for non-volatile memories utilized in recording usage counts
07/30/2008EP1644964A4 Power down processing islands
07/30/2008EP1425756A4 Non-volatile semiconductor memory and method of operating the same
07/30/2008CN101233625A Memory device with switching glass layer
07/30/2008CN101232076A Method for eliminating CuxO resistance memory formation voltage
07/30/2008CN101232074A Semiconductor storage device and its making method
07/30/2008CN101232048A Memory device and method of operating and fabricating the same
07/30/2008CN101232037A Method for interconnecting multilayer phase transition memory array and lower layer peripheral circuit
07/30/2008CN101232036A Phase change memory and manufacturing method thereofs
07/30/2008CN101232025A Non-volatile memory devices and methods of operating the same
07/30/2008CN101232024A Non-volatile memory devices and methods of operating and fabricating the same
07/30/2008CN101231889A 非易失性存储装置及其擦除方法 The nonvolatile memory device and erase methods
07/30/2008CN101231888A Method of programming data in a flash memory device
07/30/2008CN101231887A Flash memory and method for determining logic states of memory unit thereof
07/30/2008CN101231886A NAND flash memory device and method of improving characteristic of a cell in the same
07/30/2008CN101231885A Flash memory device and method of operating the same
07/30/2008CN101231884A Current compliant sensing architecture for multilevel phase change memory
07/30/2008CN101231620A Safety privacy architecture and method of non-volatile memory