Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
07/2008
07/03/2008WO2008079788A1 Command-based control of nand flash memory
07/03/2008WO2008078877A1 2t nor-type non-volatile memory cell array and method of processing data of 2t nor-type non-volatile memory
07/03/2008WO2008078844A1 Method and apparatus for mapping flash memory
07/03/2008WO2008078529A1 Test equipment and test method
07/03/2008WO2008078314A1 Flash memory device, system and method with randomizing for suppressing error
07/03/2008WO2008038236A3 A multi-transistor based non-volatile memory cell with dual threshold voltage
07/03/2008WO2008027409A3 Nand flash memory programming with floating substrate
07/03/2008WO2007070808A3 Multi-bit-per-cell nvm structures and architecture
07/03/2008US20080163030 Nonvolatile memory with error correction for page copy operation and method thereof
07/03/2008US20080162798 Wear leveling techniques for flash eeprom systems
07/03/2008US20080159009 Method, apparatus, and system for improved erase operation in flash memory
07/03/2008US20080159007 Non-volatile storage with bias based on selected word line
07/03/2008US20080159005 Selective bit line precharging in non volatile memory
07/03/2008US20080159004 Programming non-volatile memory with reduced program disturb by using different pre-charge enable voltages
07/03/2008US20080159003 Systems for programming non-volatile memory with reduced program disturb by removing pre-charge dependency on word line data
07/03/2008US20080159002 Programming non-volatile memory with reduced program disturb by removing pre-charge dependency on word line data
07/03/2008US20080159000 Method for controlling voltage in non-volatile memory systems
07/03/2008US20080158998 Flash memory device capable of preventing an overerase of flash memory cells and erase method thereof
07/03/2008US20080158997 Systems For Erasing Non-Volatile Memory Using Individual Verification And Additional Erasing of Subsets of Memory Cells
07/03/2008US20080158996 Systems For Programming Differently Sized Margins And Sensing With Compensations At Select States For Improved Read Operations In Non-Volatile Memory
07/03/2008US20080158995 Flash EEPROM System
07/03/2008US20080158994 Method for Erasing Data of NAND Flash Memory Device
07/03/2008US20080158993 Non-volatile memory device and method capable of re-verifying a verified memory cell
07/03/2008US20080158992 Non-volatile storage with adaptive body bias
07/03/2008US20080158991 Systems for programming non-volatile memory with reduced program disturb by using different pre-charge enable voltages
07/03/2008US20080158990 Retention margin program verification
07/03/2008US20080158989 Retention margin program verification
07/03/2008US20080158988 Method and apparatus for sensing flash memory using delta sigma modulation
07/03/2008US20080158986 Flash memory and associated methods
07/03/2008US20080158985 Systems for margined neighbor reading for non-volatile memory read operations including coupling compensation
07/03/2008US20080158984 Margined neighbor reading for non-volatile memory read operations including coupling compensation
07/03/2008US20080158983 Non-volatile storage system with resistance sensing and compensation
07/03/2008US20080158982 Method and apparatus for adjusting a read reference level under dynamic power conditions
07/03/2008US20080158981 Method and apparatus for on chip sensing of SONOS VT window in non-volatile static random access memory
07/03/2008US20080158979 Method for programming with initial programming voltage based on trial
07/03/2008US20080158978 Memory read circuit and memory apparatus using the same
07/03/2008US20080158977 Semiconductor memory device having fuse circuits and method of controlling the same
07/03/2008US20080158976 Biasing non-volatile storage based on selected word line
07/03/2008US20080158975 Non-volatile storage with bias for temperature compensation
07/03/2008US20080158974 Apparatus with alternating read mode
07/03/2008US20080158973 Complete word line look ahead with efficient data latch assignment in non-volatile memory read operations
07/03/2008US20080158972 Method of controlling bitline bias voltage
07/03/2008US20080158971 Method for reading nand flash memory device using self-boosting
07/03/2008US20080158969 NAND Flash Memory Cell Array With Adaptive Memory State Partitioning
07/03/2008US20080158968 Method of NAND Flash Memory Cell Array With Adaptive Memory State Partitioning
07/03/2008US20080158967 Resistance sensing and compensation for non-volatile storage
07/03/2008US20080158966 Variable Program and Program Verification Methods for a Virtual Ground Memory in Easing Buried Drain Contacts
07/03/2008US20080158963 Nonvolatile memory
07/03/2008US20080158962 Method for managing bad memory blocks in a nonvolatile-memory device, and nonvolatile-memory device implementing the management method
07/03/2008US20080158961 Semiconductor memory device in which redundancy (rd) of adjacent column is automatically repaired
07/03/2008US20080158959 Page by page ecc variation in a memory device
07/03/2008US20080158958 Memory device with reduced reading
07/03/2008US20080158957 Nonvolatile semiconductor memory device
07/03/2008US20080158956 Non-volatile memory module for preventing system failure and system including the same
07/03/2008US20080158955 Method of programming a multi bit flash memory device to avoid programming errors and a device implementing the same
07/03/2008US20080158952 Non-volatile multilevel memory cell programming
07/03/2008US20080158951 Non-volatile multilevel memory cell programming
07/03/2008US20080158950 Apparatus, method, and system for flash memory
07/03/2008US20080158949 Systems for complete word line look ahead with efficient data latch assignment in non-volatile memory read operations
07/03/2008US20080158948 Avoiding errors in a flash memory by using substitution transformations
07/03/2008US20080158947 System for controlling voltage in non-volatile memory systems
07/03/2008US20080158946 Alternating read mode
07/03/2008US20080157173 Flash memory device and method of erasing the same
07/03/2008DE10350168B4 Speicheranordnung und Verfahren zum Betreiben einer solchen Memory device and method of operating such a
07/03/2008DE102007026856A1 Non-volatile memory component has memory cell array for storing data , page buffer having bitline selection device, which is configured for selectively coupling bit lines on scanning node
07/03/2008DE102006044528B4 Nichtflüchtiges Speichergerät und Verfahren zum Steuern desselben Of the same non-volatile memory device and method for controlling
07/03/2008DE102004041519B4 Programmiersteuerschaltung und Programmiersteuerverfahren Program control circuit and programming control method
07/03/2008DE10196001B4 Schnittstellenbefehlsarchitektur für synchronen Flashspeicher Interface command architecture for synchronous flash memory
07/03/2008DE10052877B4 Mikrocontroller Microcontroller
07/02/2008EP1939889A1 Memory cell programming methods capable of reducing coupling effects
07/02/2008EP1938359A2 Memory device with improved performance and method of manufacturing such a memory device
07/02/2008EP1938194A2 Embedded eeprom array techniques for higher density
07/02/2008CN101213614A Erasing non-volatile memory using individual verification and additional erasing of subsets of memory cells
07/02/2008CN101213613A Starting program voltage shift with cycling of non-volatile memory
07/02/2008CN101213612A Method for controlling the 'first-to-melt' region in a PCM cell and devices obtained thereof
07/02/2008CN101213611A Low power multiple bit sense amplifier
07/02/2008CN101212019A Resistance random access memory unit and method for producing the same
07/02/2008CN101211986A Non-volatile memorizer writing method
07/02/2008CN101211927A Multi-position quasi memory cell operation method
07/02/2008CN101211926A Non-volatile memorizer writing method
07/02/2008CN101211925A Non-volatile memorizer writing method
07/02/2008CN101211924A Non-volatile memorizer erasing method
07/02/2008CN101211664A Method for reading nand flash memory device using self-boosting
07/02/2008CN101211663A Variable program and program verification method for a virtual ground memory
07/02/2008CN101211662A Memory cell programming methods capable of reducing coupling effects
07/02/2008CN101211661A Method of programming multi-level semiconductor memory device and multi-level semiconductor memory device
07/02/2008CN101211660A Non-volatile memory device and method of programming a multi level cell in the same
07/02/2008CN101211659A Non-volatile memory device and method of self compensation the same
07/02/2008CN101211658A Method and apparatus for adjusting a read reference level under dynamic power conditions
07/02/2008CN101211657A Semiconductor memory device and write control method therefor
07/02/2008CN101211655A Phase change memorizer writing method
07/02/2008CN101211314A Flash memory data reading-writing life-span upgrading method
07/02/2008CN101211252A Memorizer memory devices
07/02/2008CN100399476C U-disk with switch protection
07/02/2008CN100399471C System and method for achieving fast switching of analog voltages on large capacitive load
07/01/2008US7395472 Method and a unit for programming a memory
07/01/2008US7394719 Flash memory device with burst read mode of operation
07/01/2008US7394704 Non-volatile semiconductor memory device, electronic card using the same and electronic apparatus
07/01/2008US7394703 Twin insulator charge storage device operation and its fabrication method
07/01/2008US7394701 Circuit and method of driving a word line by changing the capacitance of a clamp capacitor to compensate for a fluctuation of a power supply voltage level