Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
01/2009
01/08/2009US20090010068 Systems for Coarse/Fine Program Verification in Non-Volatile Memory Using Different Reference Levels for Improved Sensing
01/08/2009US20090010066 Flash memory device and method in which trim information is stored in memory cell array
01/08/2009US20090010065 Non-volatile memory using multiple boosting modes for reduced program disturb
01/08/2009US20090010064 Nand flash cell structure
01/08/2009US20090010063 Nand type flash memory and write method of the same
01/08/2009US20090010062 Bit line decoder architecture for NOR-type memory array
01/08/2009US20090010061 Bit line decoder architecture for NOR-type memory array
01/08/2009US20090010060 Bit line decoder architecture for nor-type memory array
01/08/2009US20090010059 Memory Arrangement, Particularly for the Non-Volatile Storage of Uncompressed Video and/or Audio Data
01/08/2009US20090010058 Multi-bit non-volatile memory device, method of operating the same, and method of fabricating the same
01/08/2009US20090010057 Semiconductor memory device with memory cell having charge accumulation layer and control gate and memory system
01/08/2009DE102007030842A1 Speicheranordnung und Verfahren zum Speichern Memory device and method for storing
01/08/2009DE102004031140B4 MRAM-Speichervorrichtung MRAM memory device
01/07/2009EP2012359A1 Non-volatile two-transistor semiconductor memory cell and method for producing the same
01/07/2009EP2011123A2 Semiconductor device identifier generation method and semiconductor device
01/07/2009EP1886317B1 Method for controlling the "first-to-melt" region in a pcm cell and devices obtained thereof
01/07/2009CN101341548A Detector of abnormal destruction of memory sectors
01/07/2009CN101341546A Removable card bridge for a storage card or memory card
01/07/2009CN101339973A Reverse bias voltage induced double stable state nonvolatile semiconductor memory
01/07/2009CN101339808A Erasing method and apparatus of memory block
01/07/2009CN101339807A Programming method of non-volatile semi-conductor memory and circuit thereof
01/07/2009CN101339806A Apparatus and method to prevent data loss in nonvolatile memory
01/07/2009CN101339805A Phase change memory cell storage of high reading speed, low operating interference and operating method thereof
01/07/2009CN100449649C Read only memory device
01/07/2009CN100449648C Low working voltage driven charge pump circuit
01/07/2009CN100449647C Programming a phase-change material memory
01/07/2009CN100449646C Method and apparatus for programming nonvolatile memory
01/07/2009CN100449642C Method and apparatus to program a phase change memory
01/07/2009CN100449486C Flash memory programming
01/06/2009US7475165 Semiconductor data storage apparatus
01/06/2009US7474566 Non-volatile memory device and method capable of re-verifying a verified memory cell
01/06/2009US7474565 Programming scheme for non-volatile flash memory
01/06/2009US7474564 Non-volatile memory device capable of changing increment of program voltage according to mode of operation
01/06/2009US7474563 Flash memory, program circuit and program method thereof
01/06/2009US7474559 Circuit and method for employing unused configuration memory cells as scratchpad memory
01/06/2009US7473982 Point contact array, not circuit, and electronic circuit comprising the same
01/06/2009US7473958 Electronic memory component with protection against light attack
01/06/2009US7473956 Atomic layer deposition of metal oxide and/or low assymmetrical tunnel barrier interpoly insulators
01/02/2009DE102004052647B4 Methode zur Verbesserung der thermischen Eigenschaften von Halbleiter-Speicherzellen im Herstellungsverfahren und nichtflüchtige, resistiv schaltende Speicherzelle Method for improving the thermal characteristics of semiconductor memory cells in the manufacturing process and non-volatile, resistive switching memory cell
01/01/2009US20090003085 Nonvolatile memory system, semiconductor memory, and writing method
01/01/2009US20090003084 Driving Method of Flash Memory Device
01/01/2009US20090003080 Method of depressing read disturbance in flash memory device
01/01/2009US20090003077 Non-volatile memory device
01/01/2009US20090003076 Memory device and reading method
01/01/2009US20090003075 Flash memory devices and programming methods that vary programming conditions in response to a selected step increment
01/01/2009US20090003074 Scalable Electrically Eraseable And Programmable Memory (EEPROM) Cell Array
01/01/2009US20090003073 Rd Algorithm Improvement for Nrom Technology
01/01/2009US20090003072 Non-volatile memory device
01/01/2009US20090003071 Semiconductor storage device and read voltage correction method
01/01/2009US20090003068 Method for source bias all bit line sensing in non-volatile storage
01/01/2009US20090003067 Non-volatile memory device for reducing layout area of global wordline decoder and operation method thereof
01/01/2009US20090003066 Non-volatile memory system and programming method of the same
01/01/2009US20090003064 Flash memory device and method of programming flash memory device
01/01/2009US20090003062 Non-volatile semiconductor device
01/01/2009US20090003060 High density NOR flash array architecture
01/01/2009US20090003059 Segmented bit line for flash memory
01/01/2009US20090003058 Flash memory device and method for adjusting read voltage of flash memory device
01/01/2009US20090003057 Non-volatile memory devices and systems including multi-level cells using modified read voltages and methods of operating the same
01/01/2009US20090003056 Nonvolatile semiconductor memory device and programming method thereof
01/01/2009US20090003055 Method for programming multi-level cell flash memory device
01/01/2009US20090003053 System that compensates for coupling based on sensing a neighbor using coupling
01/01/2009US20090003052 System that compensates for coupling based on sensing a neighbor using coupling
01/01/2009US20090002025 Memory utilizing oxide nanolaminates
12/2008
12/31/2008WO2009002983A1 Non-volatile storage with individually controllable shield plates between storage elements
12/31/2008WO2009001262A1 Electric device comprising phase change material and heating element
12/31/2008WO2009001261A1 An electronic device, and a method of manufacturing an electronic device
12/31/2008EP2009643A1 Steering gate and bit line segmentation in non-volatile memories
12/31/2008EP2008283A2 Non-volatile memory and method with redundancy data buffered in data latches for defective locations
12/31/2008EP2008179A1 Enhancement of the functionality of production-model software in a controller
12/31/2008EP1747559B1 Method and apparatus for a dual power supply to embedded non-volatile memory
12/31/2008CN101335517A Amplifier
12/31/2008CN101335330A Resistance memory with tungsten compound and manufacturing
12/31/2008CN101335329A Construction for enhancing reliability of phase-change memory storage unit and manufacturing method thereof
12/31/2008CN101335328A Phase-change memory device unit construction and manufacturing method thereof
12/31/2008CN101335327A Method for controlling phase-change material or phase-change memory unit volume change and corresponding construction
12/31/2008CN101335326A Electrically inducted resistor material for resistor type memory and preparing method thereof
12/31/2008CN101335305A Non-volatile memory and method of manufacturing same
12/31/2008CN101335049A Synthetic method for protecting television data
12/31/2008CN101335048A Double programming methods of a multi-level-cell nonvolatile memory
12/31/2008CN101335047A Flash memory device and method for adjusting read voltage of flash memory device
12/31/2008CN101335046A Phase-change memory
12/31/2008CN100448015C Systems and methods for a magnetic memory device that includes two word line transistors
12/31/2008CN100447987C Memory erase method and device with optimal data retention for nonvolatile memory
12/31/2008CN100447903C Method and apparatus for boosting bitlines for low vcc read
12/31/2008CN100447902C Semiconductor memory device and non-volatile memory verifying method
12/31/2008CN100447901C A system and method for erase voltage control during multiple sector erase of a flash memory device
12/31/2008CN100447900C Overerase protection of memory cells for nonvolatile memory
12/31/2008CN100447899C Flash memory device with stable source line regardless of bit line coupling and loading effect
12/31/2008CN100447749C Method of using flash memory for storing metering data
12/30/2008US7472244 Scheme for securing a memory subsystem or stack
12/30/2008US7471581 Wide dynamic range and high speed voltage mode sensing for a multilevel digital non-volatile memory
12/30/2008US7471576 Method of transferring data in an electrically programmable memory
12/30/2008US7471568 Multi-level cell memory structures with enlarged second bit operation window
12/30/2008US7471567 Method for source bias all bit line sensing in non-volatile storage
12/30/2008US7471566 Self-boosting system for flash memory cells
12/30/2008US7471565 Reducing effects of program disturb in a memory device
12/30/2008US7471552 Analog phase change memory
12/30/2008US7471535 Programable identification circuitry
12/30/2008US7470003 Ink jet printhead with active and passive nozzle chamber structures arrayed on a substrate
12/25/2008US20080316841 Memory device having data paths with multiple speeds