Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 16 - Erasable programmable read-only memories
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
10/2008
10/15/2008CN100426419C Independent asynchronous boot block for synchronous non-voltatile memory devices
10/15/2008CN100426416C Non-volatile semiconductor memory device and controlling method of the same
10/14/2008US7437631 Soft errors handling in EEPROM devices
10/14/2008US7437498 Method and system for optimizing reliability and performance of programming data in non-volatile memory devices
10/14/2008US7437389 Remote copy system
10/14/2008US7436714 Nonvolatile semiconductor memory
10/14/2008US7436713 Reducing the impact of program disturb
10/14/2008US7436712 Nonvolatile memory device including circuit formed of thin film transistors
10/14/2008US7436709 NAND flash memory with boosting
10/14/2008US7436707 Flash memory cell structure and operating method thereof
10/14/2008US7436705 Multiple level cell memory device with single bit per cell, re-mappable memory block
10/14/2008US7436701 Single poly EPROM device with double control gates to prevent unintentionally charging/discharging
10/14/2008CA2499904C Broadcast and reception system, and receiver/decoder and remote controller therefor
10/09/2008WO2008121553A1 Non-volatile storage with decoding of data using reliability metrics based on multiple reads
10/09/2008WO2008121535A1 Non-volatile memory and method for compensation for voltage drops along a word line
10/09/2008WO2008121351A1 Non-volatile multilevel memory cell programming with more than two verify voltages per level
10/09/2008WO2008121206A1 Apparatus and method combining lower-endurance/performance and higher-endurance/performance information storage to support data processing
10/09/2008WO2008120568A1 Semiconductor integrated circuit device
10/09/2008US20080250202 Flash controller cache architecture
10/09/2008US20080247255 Electronic device including a nonvolatile memory array and methods of using the same
10/09/2008US20080247241 Sensing in non-volatile storage using pulldown to regulated source voltage to remove system noise
10/09/2008US20080247238 Method for sensing negative threshold voltages in non-volatile storage using current sensing
10/09/2008US20080247236 Program method of flash memory device
10/09/2008US20080247235 Flash memory device and method for driving the same
10/09/2008US20080247234 Flash memory device and method of operating the same
10/09/2008US20080247233 Non-volatile memory device, non-volatile memory system and control method for the non-volatile memory device
10/09/2008US20080247232 Semiconductor storage device and electronic equipment therefor
10/09/2008US20080247231 Nand flash memory device
10/09/2008US20080247230 Novel monolithic, combo nonvolatile memory allowing byte, page and block write with no disturb and divided-well in the cell array using a unified cell structure and technology with a new scheme of decoder and layout
10/09/2008DE10347975B4 Einrichtung der programmierbaren Logik The programmable logic device
10/09/2008DE102007039908A1 Programmierverfahren einer Flash-Speichervorrichtung A programming method of a flash memory device
10/09/2008DE102007022532A1 Integrierte Schaltung, Speicherzellenarray, Speicherzellenmodul sowie Verfahren zum Betreiben einer integrierten Schaltung Integrated circuit, memory cell array, memory cell module and method of operating an integrated circuit
10/09/2008DE102007016066A1 Resistance switching element for switching between electrically high and low impedance states, has resistance switching area extending from one electrode to another electrode, where area comprises transition metal oxide nitride
10/09/2008DE102007016064A1 Storage component for storage cell, comprises vertically extending through contact conductor, lateral intermediate connecting line and storage area arranged between through contact conductor and intermediate connecting line
10/08/2008EP1978526A1 Non-volatile memory with improved programming and method thereof
10/08/2008EP1977321A1 Method for utilizing a memory interface to control partitioning of a memory module
10/08/2008EP1977307A1 Portable data storage device incorporating multiple flash memory units
10/08/2008EP1886318B1 Method for controlling the "first-to-melt" region in a pcm cell and devices obtained thereof
10/08/2008EP1792288A4 Method of using flash memory for storing metering data
10/08/2008EP1606821B1 An apparatus and method for a configurable mirror fast sense amplifier
10/08/2008EP1543526B1 Method of recovering overerased bits in a memory device
10/08/2008EP1284017A4 Three-dimensional memory array and method of fabrication
10/08/2008EP1242868B1 Organization of blocks within a nonvolatile memory unit to effectively decrease sector write operation time
10/08/2008CN101281953A Material with steady resistance-vary feature as well as resistance-vary memory
10/08/2008CN101281952A Material with steady resistance-vary feature as well as resistance-vary memory
10/08/2008CN101281951A Thin-film material and method for manufacturing non-volatility resistor random memory
10/08/2008CN101281924A Method, apparatus, and system for phase change memory packaging
10/08/2008CN101281905A Semiconductor device, and method of switching drive capability of the semiconductor device
10/08/2008CN101281791A Method for programming flash device
10/08/2008CN101281790A Method for designing control circuit capable of regulating pulse-width for read-write operation of phase transition internal memory
10/08/2008CN101281789A Flash memory device and method of operating the same
10/08/2008CN101281788A Flash memory system as well as control method thereof
10/08/2008CN101281787A Memory device having inverse sum logic quick flashing memory body as well as information storage method thereof
10/08/2008CN101281508A Coded write masking
10/08/2008CN101281494A System and method for using dynamic random access memory and flash memory
10/08/2008CN101281478A Method adopting multiplexing technique to perform paralleling burning record
10/08/2008CN101281477A System adopting multiplexing technique to perform paralleling burning record
10/08/2008CN101281476A Paralleling burning record method
10/08/2008CN101281475A Paralleling burning record system
10/08/2008CN100424785C Row decoder circuit for use in programming a memory device
10/08/2008CN100424633C Control system, recording device and electronic equipment
10/07/2008US7433280 Method and system for buffering data file to buffer memory
10/07/2008US7433244 Flash memory device and related erase operation
10/07/2008US7433241 Programming non-volatile memory with reduced program disturb by removing pre-charge dependency on word line data
10/07/2008US7433239 Memory with reduced bitline leakage current and method for the same
10/07/2008US7433238 Method of programming memory cell
10/07/2008US7433237 Memory utilizing oxide nanolaminates
10/07/2008US7433233 NAND memory array incorporating capacitance boosting of channel regions in unselected memory cells and method for operation of same
10/07/2008US7433232 Memory transistor and memory unit with asymmetrical pocket doping region
10/07/2008US7433231 Multiple select gates with non-volatile memory cells
10/07/2008US7433229 Flash memory device with shunt
10/07/2008US7433228 Multi-bit flash memory device having improved program rate
10/07/2008US7431429 Printhead integrated circuit with planar actuators
10/02/2008WO2008118705A1 Flash memory refresh techniques triggered by controlled scrub data reads
10/02/2008WO2008094475A3 Flash storage partial page caching
10/02/2008WO2008083132A3 Complete word line look ahead with efficient data latch assignment in non-volatile memory read operations
10/02/2008WO2008008329A3 Memory array having a segmented bit line architecture
10/02/2008US20080242027 Non-Volatile Memory Integrated Circuit
10/02/2008US20080239830 Methods of Operating Memory Devices Including Discharge of Source/Drain Regions and Related Electronic Devices
10/02/2008US20080239829 Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell
10/02/2008US20080239828 Flash memory device and erase method thereof
10/02/2008US20080239826 Semiconductor memory device capable of achieving narrower distribution width of threshold voltages of memory cells and method of data write in the same
10/02/2008US20080239825 Floating gate memory device with improved reference current generation
10/02/2008US20080239823 Nonvolatile semiconductor memory and method for controlling the same
10/02/2008US20080239822 Semiconductor memory device and method for controlling the same
10/02/2008US20080239817 Nonvolatile semiconductor memory device and method of erasing and programming the same
10/02/2008US20080239816 Semiconductor memory device and method of manufacturing the same
10/02/2008US20080239812 Nonvolatile semiconductor memory system
10/02/2008US20080239811 Method for controlling a non-volatile semiconductor memory, and semiconductor storage system
10/02/2008US20080239810 Cell array of semiconductor memory device and method of driving the same
10/02/2008US20080239809 Flash memory device and method for providing initialization data
10/02/2008US20080239807 Transition areas for dense memory arrays
10/02/2008US20080239806 Non-volatile multilevel memory cell programming
10/02/2008US20080239805 Nonvolatile semiconductor memory and data reading method
10/02/2008US20080237563 Diode/superionic conductor/polymer memory structure
10/02/2008DE102008014421A1 Optimiertes Phasenänderungs-Schreibverfahren Optimized phase change writing method
10/02/2008DE102007026511A1 Flash-Speichereinrichtung und Löschverfahren hierfür Flash memory device and erase methods therefor
10/02/2008DE102007015281A1 Resistive switching memory cell e.g. phase change random access memory cell, operating method for e.g. flash memory, involves reading memory cell data content by applying voltage to cell in range of one threshold voltage or higher voltage
10/01/2008EP1975998A2 Method for manufacturing a plurality of island-shaped SOI structures
10/01/2008EP1975942A1 Non-volatile semiconductor memory with large erase blocks storing cycle counts
1 ... 161 162 163 164 165 166 167 168 169 170 171 172 173 174 175 176 177 178 179 180 181 ... 444