Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
02/2009
02/17/2009US7491605 Zero cost non-volatile memory cell with write and erase features
02/12/2009WO2009020845A1 Enhanced write abort mechanism for non-volatile memory
02/12/2009WO2009020718A1 Method and circuit for preventing high voltage memory disturb
02/12/2009US20090043952 Moving sectors within a block of information in a flash memory mass storage architecture
02/12/2009US20090040836 NAND flash memory device and method of programming the same
02/12/2009US20090040835 Semiconductor memory device
02/12/2009US20090040834 Semiconductor memory device
02/12/2009US20090040833 Non-volatile memory device and programming method
02/12/2009US20090040832 Soft program method in a non-volatile memory device
02/12/2009US20090040831 Method of programming in a flash memory device
02/12/2009US20090040830 Block decoder and semiconductor memory device including the same
02/12/2009US20090040828 Semiconductor memory device
02/12/2009US20090040827 Flash memory device for remapping bad blocks and bad block remapping method
02/12/2009US20090040826 Flash memory device and method of operating the same
02/12/2009US20090040824 Semiconductor device and method of manufacturing the same
02/12/2009US20090040823 Flash memory
02/12/2009US20090040822 Flash memory device having single page buffer structure and related programming operations
02/12/2009US20090040821 Low power multiple bit sense amplifier
02/12/2009US20090039412 Semiconductor device including nonvolatile memory and method of fabricating the same
02/12/2009DE102007041845A1 Verfahren zum Betreiben eines integrierten Schaltkreises mit mindestens einer Speicherzelle A method of operating an integrated circuit having at least one memory cell
02/12/2009DE102007039462A1 Verfahren und Vorrichtung zur Aufzählung Method and apparatus for enumeration
02/12/2009DE102004033443B4 Flashspeicherbauelement mit Mehrpegelzelle Flash memory device with multi-level cell
02/11/2009EP2022060A2 Verify operation for non-volatile storage using different voltages
02/11/2009EP2022059A2 Method and apparatus for improving storage performance using a background erase
02/11/2009EP2022058A2 Maintenance operations for multi-level data storage cells
02/11/2009EP2021852A2 Systems and methods for measuring the useful life of solid-state storage devices
02/11/2009EP1891644B1 Selective slow programming convergence in a flash memory device
02/11/2009EP1506581B1 Superconducting quantum bit device with josephson junctions
02/11/2009CN101366092A Multi-bit flash memory device having improved program rate
02/11/2009CN101364765A Charge pump circuit and nonvolatile memory
02/11/2009CN101364634A Semiconductor device
02/11/2009CN101364448A Redundancy scheme in memory
02/11/2009CN101364444A Control method and memory and process system using the control method
02/11/2009CN101364443A Soft program method in a non-volatile memory device
02/11/2009CN101364442A Method of programming in a flash memory device
02/11/2009CN101364441A Method and device for enumeration
02/11/2009CN101364440A Block decoder and semiconductor memory device including the same
02/11/2009CN101364439A Flash memory device and method of operating the same
02/11/2009CN101364438A Memory apparatus and method enhancing NAND array flash memory
02/11/2009CN101364437A Method capable of loss equalization of flash memory and application thereof
02/11/2009CN101364436A Non-volatile memory and method for driving the same
02/11/2009CN101364435A Memory unit
02/11/2009CN101364434A Phase change memory device with reference cell array
02/11/2009CN100461428C Non-volatile semiconductor memory device
02/11/2009CN100461426C Non-volatile memory and producing method and operating method thereof
02/11/2009CN100461425C Operation method for memory in P type channel
02/11/2009CN100461301C Flash array system and program current stablilization method
02/10/2009US7490283 Pipelined data relocation and improved chip architectures
02/10/2009US7489562 Multiple use memory chip
02/10/2009US7489558 Program method of flash memory capable of compensating read margin reduced due to charge loss
02/10/2009US7489555 Program-verify sensing for a multi-level cell (MLC) flash memory device
02/10/2009US7489554 Method for current sensing with biasing of source and P-well in non-volatile storage
02/10/2009US7489553 Non-volatile memory with improved sensing having bit-line lockout control
02/10/2009US7489552 Semiconductor integrated circuit device
02/10/2009US7489551 Memory architecture and method of manufacture and operation thereof
02/10/2009US7489550 EEPROM and method of driving the same
02/10/2009US7489548 NAND flash memory cell array with adaptive memory state partitioning
02/10/2009US7489547 Method of NAND flash memory cell array with adaptive memory state partitioning
02/10/2009US7489546 NAND architecture memory devices and operation
02/10/2009US7489545 Memory utilizing oxide-nitride nanolaminates
02/10/2009US7489544 Flash memory device having multi-level cell and reading and programming method thereof
02/10/2009US7489543 Programming multilevel cell memory arrays
02/10/2009US7489542 Systems for variable reading in non-volatile memory
02/10/2009US7489005 Eeprom
02/10/2009US7488648 Methods of fabricating scalable two-transistor memory devices having metal source/drain regions
02/05/2009WO2009018093A1 Cell deterioration warning apparatus and method
02/05/2009WO2009017889A1 Non-volatile memory having a dynamically adjustable soft program verify voltage level and method therefor
02/05/2009WO2009017368A2 Input/output control method and apparatus optimized for flash memory
02/05/2009US20090037767 Nonvolatile memory system
02/05/2009US20090037652 Command Queuing Smart Storage Transfer Manager for Striping Data to Raw-NAND Flash Modules
02/05/2009US20090037651 Non-Volatile Memory and Method with Phased Program Failure Handling
02/05/2009US20090034341 Non-volatile memory devices and programming methods thereof including moving electrons through pad oxide layers between charge trap layers
02/05/2009US20090034340 Non-volatile memory control device
02/05/2009US20090034339 Non-volatile memory having a dynamically adjustable soft program verify voltage level and method therefor
02/05/2009US20090034338 System and method for reading memory
02/05/2009US20090034337 Method, apparatus, and system for improved read operation in memory
02/05/2009US20090034336 Flash memory device having improved bit-line layout and layout method for the flash memory device
02/05/2009US20090034335 Semiconductor device and its control method
02/05/2009US20090034334 Nonvolatile memory device having a plurality of memory blocks
02/05/2009US20090034332 Semiconductor memory device
02/05/2009US20090034331 Nand memory device column charging
02/05/2009US20090034330 Word line voltage generator and flash memory device including the same, and method of generating word line voltage thereof
02/05/2009US20090034329 Semiconductor memory device capable of suppressing peak current
02/05/2009US20090034328 Memory system protected from errors due to read disturbance and reading method thereof
02/05/2009US20090032862 Non-volatile memory cell and non-volatile memory device using said cell
02/05/2009DE112004001244B4 Halbleitervorrichtung mit einem Feld aus Flashspeicherzellen und Prozess Semiconductor device having an array of flash memory cells process and
02/05/2009DE10214898B4 Speicherschaltung Memory circuit
02/05/2009DE102007037888A1 Speicherzellen-Array mit Tunnel-FET als Zugriffstransistor Memory cell array of tunnel FET as an access transistor
02/05/2009DE102007036246A1 Vergrößertes Schaltzyklus-resistives Speicherelement Increased switching cycle-resistive memory element
02/05/2009DE102005022611B4 Programmierverfahren für ein nichtflüchtiges Speicherbauelement A programming method for a non-volatile memory device
02/05/2009DE102005009700B4 Programmierverfahren und nichtflüchtiger Speicher Programming methods and non-volatile memory
02/04/2009EP2020005A1 Memory device
02/04/2009EP1908077B1 Improved read mode for flash memory
02/04/2009EP1769506B1 Multi-purpose non-volatile memory card
02/04/2009EP1466367B1 Non-volatile two-transistor semiconductor memory cell and method for producing the same
02/04/2009CN101361138A Reading non-volatile storage with efficient control of non-selected word lines
02/04/2009CN101361137A Method and apparatus for recording high-speed input data into a matrix of memory devices
02/04/2009CN101361136A Nand architecture memory devices and operation
02/04/2009CN101361135A Single level cell programming in a multiple level cell non-volatile memory device
02/04/2009CN101361134A Method for programming non-volatile memory with reduced program disturb using modified pass voltages