Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
02/2009
02/26/2009US20090053866 Nonvolatile semiconductor memory device, method for driving the same, and method for fabricating the same
02/26/2009US20090052258 Systems, methods and devices for a memory having a buried select line
02/26/2009US20090052257 Nonvolatile semiconductor memories for preventing read disturbance and reading methods thereof
02/26/2009US20090052256 Threshold voltage digitizer for array of programmable threshold transistors
02/26/2009US20090052255 Program and erase methods for nonvolatile memory
02/26/2009US20090052254 Non-Volatile Semiconductor Memory
02/26/2009US20090052253 Memory device and method reducing fluctuation of read voltage generated during read while write operation
02/26/2009US20090052252 Methods of applying read voltages in nand flash memory arrays
02/26/2009US20090052250 Semiconductor memory device and its manufacturing method
02/26/2009US20090052249 Semiconductor memory device having memory block configuration
02/26/2009US20090052248 Flash memory array system including a top gate memory cell
02/26/2009US20090052246 Non-volatile shadow latch using a nanotube switch
02/26/2009US20090052244 Multilevel storage nonvolatile semiconductor memory device enabling high-speed data reading and high-speed data writing
02/26/2009US20090052243 Method of controlling a memory cell of non-volatile memory device
02/26/2009US20090052242 Nand type nonvolatile semiconductor memory
02/26/2009US20090052241 Method of operating a non-volatile memory device
02/26/2009US20090052240 Flash Memory Device and Method of Programming the Same
02/26/2009US20090052239 Nonvolatile memory devices and data reading methods
02/26/2009US20090052238 Semiconductor integrated circuit
02/26/2009DE102008033683A1 Integrierte Speicherschaltung mit Speicherzellen auf benachbarten Sockeln mit unterschiedlichen Höhen und Herstellungsverfahren dafür An integrated circuit memory with memory cells on adjacent headers with different heights and producing method thereof
02/26/2009DE102004004885B4 Magnetspeicher Magnetic memory
02/25/2009CN201199452Y Portable quickflashing memorization memory device capable of displaying residual longevity information
02/25/2009CN101375291A Sequential access memory
02/25/2009CN101373776A Semiconductor device
02/25/2009CN101373640A Flash memory apparatus and method for error correction
02/25/2009CN101373638A Method of controlling copy-back operation of flash memory device including multi-level cells
02/25/2009CN101373637A Nonvolatile memory devices and data reading methods
02/25/2009CN101373636A Method for preventing memory array generating bit line interference
02/25/2009CN101373635A Non-volatile memory device
02/25/2009CN101373634A CMOS logic compatible non-volatile memory cell structure, operation, and array configuration
02/25/2009CN101373633A Non-volatile semiconductor memory device
02/25/2009CN101373632A Resistance variable memory device and operating method thereof
02/25/2009CN100464375C Erasing method for reducing erasing time and preventing over erasing
02/25/2009CN100464313C Mobile memory device and method for accessing encrypted data in mobile memory device
02/24/2009US7496810 Semiconductor memory device and its data writing method
02/24/2009US7495989 Portable data storage apparatus
02/24/2009US7495967 Method of identifying logical information in a programming and erasing cell by on-side reading scheme
02/24/2009US7495966 Memory voltage cycle adjustment
02/24/2009US7495965 Semiconductor memory device
02/24/2009US7495962 Alternating read mode
02/24/2009US7495960 Program methods for split-gate memory
02/24/2009US7495959 Nonvolatile memory device and method of reading information from the same
02/24/2009US7495958 Program and erase methods and structures for byte-alterable flash memory
02/24/2009US7495957 Nonvolatile memory device having a block erase operation
02/24/2009US7495955 Nonvolative semiconductor memory device and operating method thereof
02/24/2009US7495954 Method for partitioned erase and erase verification to compensate for capacitive coupling effects in non-volatile memory
02/24/2009US7495953 System for configuring compensation
02/24/2009US7495283 Nor-type channel-program channel-erase contactless flash memory on SOI
02/24/2009US7495278 Non-volatile memory and semiconductor device
02/24/2009US7494873 Memory utilizing oxide-nitride nanolaminates
02/24/2009US7494066 Semiconductor device
02/19/2009WO2009022771A1 Apparatus and method for multi-bit programming
02/19/2009US20090049234 Solid state memory (ssm), computer system including an ssm, and method of operating an ssm
02/19/2009US20090049231 Efficient and systematic measurement flow on drain voltage for different trimming in flash silicon characterization
02/19/2009US20090046513 Enhanced erase for flash storage device
02/19/2009US20090046511 Regulation of boost-strap node ramp rate using capacitance to counter parasitic elements in channel
02/19/2009US20090046509 Technique to improve and extend endurance and reliability of multi-level memory cells in a memory device
02/19/2009US20090046508 Programming methods for multi-level flash EEPROMs
02/19/2009US20090046506 Method and Apparatus for Programming Nonvolatile Memory
02/19/2009US20090046505 Flash memory devices and operating methods that concurrently apply different predetermined bias voltages to dummy flash memory cells than to regular memory cells during erase
02/19/2009DE10137120B4 Betriebsart einer Ansteuerschaltung einer Speicherzellenanordnung Mode of a control circuit of a memory cell array
02/19/2009DE10115293B4 Verfahren zum Kennzeichnen eines integrierten Schaltkreises und integrierter Schaltkreis Method for marking an integrated circuit and integrated circuit
02/18/2009EP2026384A2 Charge trapping memory cell with high speed erase
02/18/2009EP2026353A2 AC sensing for a resistive memory
02/18/2009EP2024978A2 Sonos memory device and method of operating a sonos memory device
02/18/2009EP2024840A1 Method and arrangement for processing transactions in a flash type memory device
02/18/2009EP2024839A2 Non-volatile memory system with end of life calculation
02/18/2009EP1702338B1 Robust data duplication and improved update method in a multibit non-volatile memory
02/18/2009CN101371315A Method for controlled programming of non-volatile memory exhibiting bit line coupling
02/18/2009CN101371314A Reducing read disturb for non-volatile storage
02/18/2009CN101369629A Solid electrolyte silver germanium oxygen thin film and preparation method and use thereof
02/18/2009CN101369597A Multi-level memory cell having phase change element and asymmetrical thermal boundary
02/18/2009CN101369459A Biasing and shielding circuit for source side sensing memory and operation method thereof
02/18/2009CN101369458A Method and apparatus for programming nonvolatile memory
02/18/2009CN101369457A Apparatus and method of nonvolatile memory device having three-level nonvolatile memory cells
02/18/2009CN101369456A Data write-in method of flash memory
02/18/2009CN101369455A Method for reducing programming interference of nitride read-only memory
02/18/2009CN101369454A Method for reducing programming interference of nitride read-only memory
02/18/2009CN101369453A Flash memory device and method of controlling flash memory device
02/18/2009CN100463209C Phase change memory element with vacuum jacket
02/18/2009CN100463189C Nonvolatile memory array, programming and manufacturing method
02/18/2009CN100463187C Method and apparatus for operating charge trapping nonvolatile memory
02/18/2009CN100463184C Method and apparatus for operating paralledl arrangement nonvolatile memory
02/18/2009CN100463183C Method and apparatus for operating series nonvolatile memory unit
02/18/2009CN100463138C Operation scheme with charge balancing erase for charge trapping non-volatile memory
02/18/2009CN100463077C Method for synchronous programming and programming verification of memory and integrate circuit thereof
02/18/2009CN100463074C Memory core, method for accessing its unit cell and reading sulfur selenium tellurium glass memory
02/17/2009US7493455 Memory writing device for an electronic device
02/17/2009US7492660 Flash EEprom system
02/17/2009US7492643 Nonvolatile semiconductor memory
02/17/2009US7492642 Flash memory device capable of reduced programming time
02/17/2009US7492641 Non-volatile semiconductor memory device
02/17/2009US7492640 Sensing with bit-line lockout control in non-volatile memory
02/17/2009US7492639 EEPROM memory having an improved resistance to the breakdown of transistors
02/17/2009US7492635 NOR-type hybrid multi-bit non-volatile memory device and method of operating the same
02/17/2009US7492634 Method for programming of multi-state non-volatile memory using smart verify
02/17/2009US7492633 System for increasing programming speed for non-volatile memory by applying counter-transitioning waveforms to word lines
02/17/2009US7492490 Image processing apparatus for applying effects to a stored image
02/17/2009US7491963 Non-volatile memory structure
02/17/2009US7491608 Vertical transistor with horizontal gate layers