Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
09/2008
09/17/2008CN201117475Y Computer unblocking key
09/17/2008CN101268520A Program method for flash memory with optimized voltage level dependent of the number of bits detected to have failed programming
09/17/2008CN101268519A Programming non-volatile memory with self-adjusting maximum program loop
09/17/2008CN101267017A A tube phase change memory unit structure and its making method
09/17/2008CN101267016A Improved phase change memory unit component structure
09/17/2008CN101267004A Storage unit structure and its operation method
09/17/2008CN101266839A Method of detecting an pseudu-programming cell and method of programming the pseudu-programming cell using the same
09/17/2008CN101266838A Method of reading data in a non-volatile memory device
09/17/2008CN101266837A Charge trap type non-volatile memory device and program method thereof
09/17/2008CN101266836A Word line driver for or/not quick flash memory
09/17/2008CN101266835A Non-volatile memory apparatus comprising multi-user selectable programming mode and the related method
09/17/2008CN100419915C Nonvolatile semiconductor memory device
09/17/2008CN100419910C Memory with memory component
09/17/2008CN100419908C Semiconductor memory device, method for driving the same and portable electronic appararus
09/17/2008CN100419903C Composite storage circuit and semiconductor device having the same composite storage circuit
09/17/2008CN100419714C Flash memory file system
09/16/2008US7426613 Addressing, command protocol, and electrical interface for non-volatile memories utilized in recording usage counts
09/16/2008US7426143 Semiconductor memory device and related programming method
09/16/2008US7426142 Device and method for sensing programming status of non-volatile memory elements
09/16/2008US7426141 Semiconductor memory device
09/16/2008US7426139 Dynamic program and read adjustment for multi-level cell memory array
09/16/2008US7426138 Parallel programming of multiple-bit-per-cell memory cells by controlling program pulsewidth and programming voltage
09/16/2008US7426136 Non volatile memory
09/16/2008US7425739 Nonvolatile semiconductor memory
09/12/2008WO2008109411A1 Non-volatile memory and method for cache page copy
09/12/2008WO2008107890A1 File system and methods for managing files according to application
09/12/2008WO2008106778A1 Partial block erase architecture for flash memory
09/12/2008WO2008058082A3 Adaptive read and write systems and methods for memory cells
09/12/2008WO2008019218A3 Phased garbage collection
09/12/2008CA2678886A1 Partial block erase architecture for flash memory
09/11/2008US20080219082 Nonvolatile semiconductor memory
09/11/2008US20080219059 Method for Cache Page Copy in a Non-Volatile Memory
09/11/2008US20080219058 Semiconductor memory device which stores plural data in a cell
09/11/2008US20080219056 System that compensates for coupling during programming
09/11/2008US20080219052 Always-evaluated zero standby-current programmable non-volatile memory
09/11/2008US20080219051 System that compensates for coupling during programming
09/11/2008US20080219050 Reduction of back pattern dependency effects in memory devices
09/11/2008US20080219049 Electrically alterable non-volatile memory with n-bits per cell
09/11/2008DE102008012827A1 Verfahren zur Verhinderung eines Overreset A method of preventing an over reset
09/11/2008DE102007011638A1 Verfahren zum Einschreiben von Daten in einen Speicher eines tragbaren Datenträgers A method for writing data in a memory of a portable data carrier
09/11/2008DE102007009876A1 Integrated circuit, has arrangement of transistor selection, which are formed in substrate and multiple parallel word lines are extend below datum plane in horizontal direction and earth cable is arranged over datum plane
09/11/2008DE102007006567B3 Resistive memory cell for use in a memory component, comprises resistive memory element with two resistive conditions, where selection unit is provided with interconnected and disconnected condition
09/11/2008DE102005021823B4 Speicherkarte und Verfahren zum Aktivieren eines Indikators einer Speicherkarte Memory card and method for activating an indicator of a memory card
09/11/2008DE102004039977B4 Programmierverfahren und Treiberschaltung für eine Phasenwechselspeicherzelle The programming method and driving circuit for a phase change memory cell
09/10/2008EP1968073A1 Method for writing data onto the memory of a portable data carrier
09/10/2008EP1966803A2 Non-volatile memory operated on the basis of a two-step bit-line precharge operation and a two-pass sensing operation
09/10/2008EP1966802A2 Methods and device for improved program-verify operations in non-volatile memories
09/10/2008EP1966801A2 Reference sense amplifier and method for compensated sensing in non-volatile memory
09/10/2008CN101263708A Image sensor architecture employing one or more floating gate device
09/10/2008CN101263563A High performance flash memory device capable of high density data storage
09/10/2008CN101263562A Semiconductor memory having data rotation/interleave function
09/10/2008CN101263561A Serial flash memory device and precharging method thereof
09/10/2008CN101262005A Phase change storage unit using Schottky base diode as selection tube and its making method
09/10/2008CN101262004A Phase change storage unit and method for dual shallow groove separated bipolar transistor selection
09/10/2008CN101261880A Programmable conductor random access memory and method for sensing same
09/10/2008CN101261879A Program method of multi bit flash memory device for reducing a program error
09/10/2008CN100418227C Semiconductor storage device and method of manufacturing same
09/10/2008CN100418226C Non-volatility memory and its operation method
09/09/2008US7424629 Data controlled power supply apparatus
09/09/2008US7424593 Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
09/09/2008US7423918 Memory device having data paths with multiple speeds
09/09/2008US7423911 Bit line control circuit for semiconductor memory device
09/09/2008US7423908 Nonvolatile memory devices and methods of controlling the wordline voltage of the same
09/09/2008US7423904 Non-volatile semiconductor memory device and operating method thereof
09/04/2008WO2008104462A1 Rectifying element for a crosspoint based memory array architecture
09/04/2008WO2008104049A1 Decoding control with address transition detection in page erase function
09/04/2008US20080215930 Flash memory with multi-bit read
09/04/2008US20080215803 Semiconductor storage device and method of controlling the same
09/04/2008US20080212376 Methods of operating and manufacturing logic device and semiconductor device including complementary nonvolatile memory device, and reading circuit for the same
09/04/2008US20080212375 Method of programming and erasing a p-channel be-sonos nand flash memory
09/04/2008US20080212374 Novel Multi-State Memory
09/04/2008US20080212373 Semiconductor integrated circuit device with a stacked gate including a floating gate and a control gate
09/04/2008US20080212372 Nonvolatile memory devices that support virtual page storage using odd-state memory cells and methods of programming same
09/04/2008US20080212371 Non-volatile memory copy back
09/04/2008US20080212370 Nonvolatile semiconductor storage device, nonvolatile semiconductor storage system and method of managing of defective column in nonvolatile semiconductor storage system
09/04/2008US20080212369 Method of managing a memory device employing three-level cells
09/04/2008US20080212368 Data verification method and semiconductor memory
09/04/2008US20080212367 Method of operating a flash memory device
09/04/2008US20080212362 Control of set/reset pulse in response to peripheral temperature in pram device
09/04/2008US20080212357 Simultaneous read circuit for multiple memory cells
09/04/2008DE112004000661T5 Integrierte Schaltung mit einem magnetisch ummantelten Leiter An integrated circuit comprising a magnetically coated conductor
09/04/2008DE102008009847A1 Verfahren zum Treiben eines nichtflüchtigen Speicherelements und nichtflüchtiges Speicherelement A method of driving a nonvolatile memory element and nonvolatile memory element
09/04/2008DE102008009846A1 Speichersystem, NAND-Flashspeicher und Verfahren zum Lesen von Daten in einem NAND-Flashspeichersystem mit wahlfreiem Zugriff Memory system, NAND flash memory and method of reading data in a NAND flash memory system random access
09/04/2008DE102007031027A1 Leseverfahren einer Speichervorrichtung Reading method of a memory device
09/04/2008DE102007021535A1 Verfahren zum Testen einer integrierten Schaltung, Verfahren zum Ermitteln defekter Widerstandsänderungszellen, Testvorrichtung sowie Computerprogramm A method for testing an integrated circuit, A method for detecting defective resistance change cells, test device and computer program
09/04/2008DE102007008531A1 Halbleitereinrichtung mit adaptiver Leseeinheit und Verfahren zum Lesen eines Speicherzellenfeldes A semiconductor device with adaptive reading unit and method for reading a memory cell array
09/04/2008CA2676639A1 Decoding control with address transition detection in page erase function
09/03/2008EP1964170A2 Flash devices with shared word lines and manufacturing methods therefor
09/03/2008EP1964129A1 Reading non-volatile storage with efficient control of non-selected word lines
09/03/2008EP1964128A2 Use of recovery transistors during write operations to prevent disturbance of unselected cells
09/03/2008EP1964127A1 Method for programming non-volatile memory with reduced program disturb using modified pass voltages
09/03/2008EP1964126A2 Array source line (avss) controlled high voltage regulation for programming flash or ee array
09/03/2008EP1118065B1 Circuit and method for authenticating the content of a memory location
09/03/2008CN101258554A Negative voltage discharge scheme to improve snapback in a non-volatile memory
09/03/2008CN101257090A Si-Te-Sb series phase-change thin film material for phase-change memory
09/03/2008CN101257089A Resistive random access memory and manufacturing method for the same
09/03/2008CN101257087A Phase change memory cell with filled sidewall memory element and method for fabricating the same
09/03/2008CN101257027A Nanometer silicon material lateral wall structure resetting flash memory and manufacturing and using method thereof
09/03/2008CN101256838A Data verification method and semiconductor memory
09/03/2008CN101256837A Method of operating nonvolatile memory device