Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
12/2008
12/25/2008US20080316834 Bias circuits and methods for enhanced reliability of flash memory device
12/25/2008US20080316832 Non-volatile storage system with intelligent control of program pulse duration
12/25/2008US20080316831 Nonvolatile semiconductor device, system including the same, and associated methods
12/25/2008US20080316829 System for verifying non-volatile storage using different voltages
12/25/2008US20080316825 Semiconductor memory device
12/25/2008US20080316824 Non-volatile memory device and method of operating the same
12/25/2008US20080316822 Memory system that detects bit errors due to read disturbance and methods thereof
12/25/2008US20080316821 Nonvolatile storage device and bias control method thereof
12/25/2008US20080316820 Method of programming memory device
12/25/2008US20080316819 Flash memory device capable of storing multi-bit data and single-bit data
12/25/2008US20080316818 Non-volatile memory device and method of operating
12/25/2008US20080316816 Systems for programming multilevel cell nonvolatile memory
12/25/2008US20080316814 Program-verify sensing for a multi-level cell (mlc) flash memory device
12/25/2008US20080316810 Memory unit
12/24/2008WO2008157606A1 Intelligent control of program pulse duration
12/24/2008WO2008157106A1 Programming rate identification and control in a solid state memory
12/24/2008WO2008157084A1 Programmable chip enable and chip address in semiconductor memory
12/24/2008WO2008157049A1 Circuit, biasing scheme and fabrication method for diode accessed cross-point resistive memory array
12/24/2008WO2008157002A1 Quantizing circuits with variable reference signals
12/24/2008WO2008157000A1 Delta sigma sense amplifier comprising digital filters and memory
12/24/2008WO2008156999A1 Digital filters for semiconductor devices
12/24/2008WO2008156238A1 Method and apparatus for controlling reading level of memory cell
12/24/2008EP2005440A1 Method for operating a memory unit
12/24/2008EP2005439A2 Program time adjustment as function of program voltage for improved programming speed
12/24/2008EP2005438A1 Reducing the impact of program disturb
12/24/2008EP2005437A1 Reducing the impact of program disturb during read
12/24/2008EP2005436A2 Methods for erasing and programming memory devices
12/24/2008EP2005203A1 Power supply testing architecture
12/24/2008EP1717816B1 Current/voltage conversion circuit and its controlling method
12/24/2008EP1665282B1 Erase inhibit in non-volatile memories
12/24/2008EP1636803B1 Source controlled operation of non-volatile memories
12/24/2008EP1573746B1 Circuit for accurate memory read operations
12/24/2008EP1556866B1 Flash memory cell arrays having dual control gates per memory cell charge storage element
12/24/2008DE102008026512A1 Nonvolatile memory apparatus e.g. NAND flash memory, programming method for use in e.g. personal computer, involves applying time delay and soft elimination pulses to non-volatile memory apparatus
12/24/2008DE102005011299B4 Programmierverfahren und Schreibtreiberschaltung für Phasenänderungsspeicherzellen Programming method and write driver circuit for phase change memory cells
12/24/2008CN201170961Y Apparatus for erasing data
12/24/2008CN101330093A Memory element array
12/24/2008CN101330082A Input/output regulating circuitry
12/24/2008CN101329915A Method for programming the storing device
12/24/2008CN101329914A Semiconductor device, memory reading method and memory programming method
12/24/2008CN101329913A CMOS compatible single-layer polysilicon non-volatile memory
12/24/2008CN101329912A Semiconductor device having transistor and capacitor of SOI structure and storing data in nonvolatile manner
12/24/2008CN101329910A Phase change memory device
12/24/2008CN101329909A System and method for improving programming speed of phase-change memory
12/24/2008CN101329908A Phase-change memory for high speed complementation unit
12/24/2008CN101329907A System and method for reducing programming power consumption of phase-change memory
12/24/2008CN101329906A Non-volatile sequent modular memory, data storage and reading method
12/24/2008CN101329905A Novel non-volatilization dynamic memory and memory operation method thereof
12/24/2008CN100446259C Nonvolatile memory unit and its array
12/24/2008CN100446253C Semiconductor device, nonvolatile storage unit and operation method thereof
12/24/2008CN100446126C Flash memory access using a plurality of command cycles
12/24/2008CN100446125C Nonvolatile storage unit in high speed
12/24/2008CN100446121C Semiconductor memory and its mfg. method
12/23/2008US7468922 Apparatus and method for dynamically repairing a semiconductor memory
12/23/2008US7468921 Method for increasing programming speed for non-volatile memory by applying direct-transitioning waveforms to word lines
12/23/2008US7468920 Applying adaptive body bias to non-volatile storage
12/23/2008US7468919 Biasing non-volatile storage based on selected word line
12/23/2008US7468918 Systems for programming non-volatile memory with reduced program disturb by removing pre-charge dependency on word line data
12/23/2008US7468915 Method of reducing disturbs in non-volatile memory
12/23/2008US7468913 Semiconductor device
12/23/2008US7468911 Non-volatile memory using multiple boosting modes for reduced program disturb
12/23/2008US7468910 Method for accessing a memory
12/23/2008US7468909 Semiconductor device and method of controlling the same
12/23/2008US7468908 Non-volatile semiconductor memory device adapted to store a multi-valued in a single memory cell
12/23/2008US7468907 Programming method for flash memory capable of compensating reduction of read margin between states due to hot temperature stress
12/18/2008WO2008154290A1 Memory repair system and method
12/18/2008WO2008154229A1 Non-volatile memory and method for improved sensing having bit-line lockout control
12/18/2008WO2008154127A1 One time programmable element system in an integrated circuit
12/18/2008US20080313419 Method and system for buffering data file to buffer memory
12/18/2008US20080313392 Data controlled power supply apparatus
12/18/2008US20080310238 Methods of Programming Data in a Non-Volatile Memory Device and Methods of Operating a Nand Flash Memory Device Using the Same
12/18/2008US20080310234 Nonvolatile memory device and methods of programming and reading the same
12/18/2008US20080310233 Multiple select gates with non-volatile memory cells
12/18/2008US20080310232 Erase verify for memory devices
12/18/2008US20080310230 Flash Memory Devices Having Three Dimensional Stack Structures and Methods of Driving Same
12/18/2008US20080310229 Semiconductor memory device in which word lines are driven from either side of memory cell array
12/18/2008US20080310227 Semiconductor memory device and related programming method
12/18/2008US20080310226 Multi-Bit Flash Memory Devices Having a Single Latch Structure and Related Programming Methods, Systems and Memory Cards
12/18/2008US20080310223 Method for programming a multilevel memory
12/18/2008DE102004056088B4 Speichersystem mit Flashspeicher Storage system with flash memory
12/17/2008EP2003678A2 Structures based on nanoparticles and method for their fabrication
12/17/2008EP2003649A2 Emulated combination memory device
12/17/2008EP2003566A1 Method and control device for operating a non-volatile memory, in particular for use in motor vehicles
12/17/2008EP2002447A2 Non-volatile memory and method with redundancy data buffered in remote buffer circuits
12/17/2008EP2002445A1 A non-volatile memory device and programmable voltage reference for a non-volatile memory device
12/17/2008EP2002442A1 Flash memory system control scheme
12/17/2008EP1905043A4 Memory architecture with enhanced over-erase tolerant control gate scheme
12/17/2008EP1497833B1 Improved erase method for a dual bit memory cell
12/17/2008CN201166987Y EEPROM wiping-writing high voltage switching control caching apparatus
12/17/2008CN101325415A On-line programming apparatus for programmable logic device
12/17/2008CN101325245A Electronics module, method for the manufacture thereof and applications
12/17/2008CN101325244A Structures based on nanoparticles and method for their fabrication
12/17/2008CN101325180A Systems and methods for self convergence during erase of a non-volatile memory
12/17/2008CN101325179A Method of fabricating semiconductor memory device having self-aligned electrode
12/17/2008CN101325089A Nonvolatile memory device and methods of programming and reading the same
12/17/2008CN101325088A Non-volatile memory device and operation method thereof
12/17/2008CN101324866A Method of data access preventing decryption
12/17/2008CN100444389C Non-volatile two-transistor semiconductor memory cell and method for producing the same
12/17/2008CN100444286C Memory cell signal window testing apparatus
12/17/2008CN100444285C Reference current producing circuit of multiple allocation flash storage