Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
03/2009
03/12/2009US20090067236 Nonvolatile semiconductor memory device
03/12/2009US20090067235 Test circuit and method for multilevel cell flash memory
03/12/2009US20090067234 Flash Memory Device and Fabrication Method Thereof
03/11/2009EP2033195A2 Apparatus and method for reduced peak power consumption during common operation of multi-nand flash memory devices
03/11/2009EP2033193A2 Method and apparatus for managing behavior of memory devices
03/11/2009EP1894207B1 Program method for flash memory with optimized voltage level dependent of the number of bits detected to have failed programming
03/11/2009CN101385089A Alternate row-based reading and writing for non-volatile memory
03/11/2009CN101385088A Single latch data circuit in a multiple level cell non-volatile memory device
03/11/2009CN101385087A SONOS memory device with reduced short-channel effects
03/11/2009CN101384984A Portable data storage device incorporating multiple flash memory units
03/11/2009CN101383398A Application of stibium containing material as resistor converting storage medium
03/11/2009CN101383397A Phase change memory device and fabrication method thereof
03/11/2009CN101383373A Semiconductor device and method for fabricating the same
03/11/2009CN101383337A Programmable fuse/non-volatile memory structures in beol regions using externally heated phase change material
03/11/2009CN101383189A Method for testing memory
03/11/2009CN101383187A Non-volatile semiconductor memory device and method for controlling the same
03/11/2009CN101383186A Programming method and device of NAND type flash memory and reading method
03/11/2009CN100468808C Storage device
03/11/2009CN100468778C Method and apparatus for dual conduction analog programming
03/11/2009CN100468747C Method for operating non-volatile memory
03/11/2009CN100468740C 半导体器件及其驱动方法 Semiconductor device and its driving method
03/11/2009CN100468578C Semiconductor device and method for testing semiconductor device
03/11/2009CN100468576C Flash memory data read-write processing method
03/11/2009CN100468575C Multi-plane type flash memory device and methods for controlling program and read operations of the same
03/11/2009CN100468574C Non-volatile semiconductor storage device
03/11/2009CN100468571C Memory device
03/11/2009CN100468568C Semiconductor memory device and data read method thereof
03/11/2009CN100468567C Floating gate analog voltage level shift circuit and method for producing a voltage reference that operates on a low supply voltage
03/11/2009CN100468335C Method and device for on-line programming logic device
03/11/2009CN100468307C Memory card, card controller mounted on the memory card, and device for processing the memory card
03/10/2009US7502985 Method of detecting and correcting errors for a memory and corresponding integrated circuit
03/10/2009US7502970 Memory device and memory card
03/10/2009US7502813 Software update process using an extra memory block
03/10/2009US7502265 Voltage regulator having a low noise discharge switch for non-volatile memories, in particular for discharging word lines from negative voltages
03/10/2009US7502264 On-chip EE-PROM programming waveform generation
03/10/2009US7502262 NAND type flash memory array and method for operating the same
03/10/2009US7502261 Flash memory cell arrays having dual control gates per memory cell charge storage element
03/10/2009US7502260 Method for non-volatile memory with background data latch caching during program operations
03/10/2009US7502256 Systems and methods for reducing unauthorized data recovery from solid-state storage devices
03/10/2009US7502255 Method for cache page copy in a non-volatile memory
03/10/2009US7502251 Phase-change memory device and method of writing a phase-change memory device
03/05/2009WO2009027216A1 System and method of writing data in a flash memory on the basis of additional removable contact pads
03/05/2009US20090059679 Erasing method of non-volatile memory
03/05/2009US20090059678 Memory Cell Arrangement, Method for Controlling a Memory Cell, Memory Array and Electronic Device
03/05/2009US20090059677 Semiconductor device
03/05/2009US20090059673 Method of Operating an Integrated Circuit for Reading the Logical State of a Memory Cell
03/05/2009US20090059672 Self-timed integrating differential current sense amplifier
03/05/2009US20090059671 Method of programming non-volatile memory device
03/05/2009US20090059670 Nonvolatile semiconductor memory device
03/05/2009US20090059668 Virtual ground array memory and programming method thereof
03/05/2009US20090059667 Memory cell array and non-volatile memory device
03/05/2009US20090059666 Memory cell array and non-volatile memory device
03/05/2009US20090059665 Semiconductor Memory
03/05/2009US20090059664 Electrically Erasable Programmable Read-Only Memory (EEPROM) Cell and Methods for Forming and Reading the Same
03/05/2009US20090059663 Method for preventing memory from generating leakage current and memory thereof
03/05/2009US20090059662 Multi-level cell memory devices and methods using sequential writing of pages to cells sharing bit buffers
03/05/2009US20090059661 Sequence detection for flash memory with inter-cell interference
03/05/2009US20090059660 Reducing the impact of interference during programming
03/05/2009DE102008044997A1 Speicherzellenanordnung, Verfahren zum Steuern einer Speicherzelle, Speicherarray und elektronische Vorrichtung Memory cell arrangement, method of controlling a memory cell array and memory electronic device
03/05/2009DE102007045076B3 Verfahren zum Betreiben eines integrierten Schaltkreises zum Auslesen des Logikzustands einer Speicherzelle A method of operating an integrated circuit for reading out the logic state of a memory cell
03/04/2009EP2031598A1 System and method of writing data in a flash memory on the basis of additional removable contact pads
03/04/2009EP2030206A2 A method for programming and erasing an array of nmos eeprom cells that minimize bit disturbances and voltage withstand requirements for the memory array and supporting circuits
03/04/2009EP2030205A2 Method for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages
03/04/2009EP1815480A4 Method and system for regulating a program voltage value during multilevel memory device programming
03/04/2009CN101378060A Semiconductor device, method for manufacturing the same, and method for driving the same
03/04/2009CN101377955A Electrically erasable programmable read-only memory (EEPROM) cell and methods for forming and reading the same
03/04/2009CN101377954A Magnetic random access memory and operation method thereof
03/04/2009CN101377953A Virtual ground array memory and programming method thereof
03/04/2009CN100466259C Nand flash memory device and method of forming a well of a nand flash memory device
03/04/2009CN100466186C method for producing the transistors with independent gate structures
03/04/2009CN100466106C Structures and methods for enhancing erase uniformity in an nrom array
03/04/2009CN100466105C Bit reading method for silicon nitride read-only memory unit
03/04/2009CN100466104C Programming method for storing elements
03/04/2009CN100466097C Method for adjusting programmable resistance to preset resistance value
03/03/2009US7499362 Techniques for storing accurate operating current values
03/03/2009US7499346 High voltage generating device of semiconductor device
03/03/2009US7499345 Non-volatile memory implemented with low-voltages transistors and related system and method
03/03/2009US7499337 Method of erasing data in non-volatile semiconductor memory device while suppressing variation
03/03/2009US7499336 Method of programming a nonvolatile memory cell and related memory array
03/03/2009US7499335 Non-volatile memory with improved erasing operation
03/03/2009US7499333 Boost voltage generating circuit and method thereof
03/03/2009US7499332 Circuit and method for electrically programming a non-volatile semiconductor memory via an additional programming pulse after verification
03/03/2009US7499330 Programming method for NAND EEPROM
03/03/2009US7499328 Electrically writable non-volatile memory
03/03/2009US7499327 NAND flash memory device having page buffer adapted to discharge bit line voltage during erase operation
03/03/2009US7499326 Apparatus for reducing the impact of program disturb
03/03/2009US7499325 Flash memory device with improved erase operation
03/03/2009US7499324 Non-volatile memory and method with control gate compensation for source line bias errors
03/03/2009US7499323 Flash memory device and data I/O operation method thereof
03/03/2009US7499322 Integrated circuit memory system with high speed non-volatile memory data transfer capability
03/03/2009US7499321 Semiconductor integrated circuit
03/03/2009US7499320 Non-volatile memory with cache page copy
03/03/2009US7499319 Read operation for non-volatile storage with compensation for coupling
03/03/2009US7499318 Nonvolatile semiconductor memory device having a management memory capable of suppressing bitline interference during a read operation
03/03/2009US7499317 System for partitioned erase and erase verification in a non-volatile memory to compensate for capacitive coupling
03/03/2009US7498630 Nonvolatile semiconductor memory
02/2009
02/26/2009WO2009026330A1 Charge loss compensation methods and apparatus
02/26/2009WO2009025229A1 Memory system
02/26/2009WO2008151262A3 Solid state memory utilizing analog communication of data values
02/26/2009US20090053884 Semiconductor memory device and manufacturing method thereof