Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
04/2009
04/15/2009CN101409290A Non-volatile memory device, method of operating the same, and method of fabricating the same
04/15/2009CN101409109A System for testing and recording automation storage die set
04/15/2009CN101409108A Average abrasion method and controller using the same
04/15/2009CN101409107A Methods of programming non-volatile memory cells
04/15/2009CN101409106A Control method for Flash memory on-line programming
04/15/2009CN101409105A 快闪存储设备 Flash memory device
04/15/2009CN100479064C Nonvolatile semiconductor memory device and data erasing method thereof
04/15/2009CN100479063C Memory using boosted substrate/tub, method and system for operating same
04/15/2009CN100479062C Page buffer circuit, flash memory device and program operation method of the flash memory device
04/15/2009CN100479057C Nonvolatile semiconductor memory device and control method thereof
04/14/2009US7518939 Portable data storage apparatus
04/14/2009US7518931 Method of monitoring an erase threshold voltage distribution in a NAND flash memory device
04/14/2009US7518930 Method for generating and adjusting selected word line voltage
04/14/2009US7518929 Nonvolatile semiconductor memory device for writing multivalued data
04/14/2009US7518928 Efficient verification for coarse/fine programming of non volatile memory
04/14/2009US7518927 Non-volatile semiconductor memory device and method for recovering data in non-volatile semiconductor memory device
04/14/2009US7518925 Nonvolatile semiconductor memory
04/14/2009US7518923 Margined neighbor reading for non-volatile memory read operations including coupling compensation
04/14/2009US7518922 NAND type flash memory
04/14/2009US7518921 Semiconductor memory device which includes memory cell having charge accumulation layer and control gate
04/14/2009US7518916 Method and apparatus to program both sides of a non-volatile static random access memory
04/14/2009US7518911 Method and system for programming multi-state non-volatile memory devices
04/14/2009US7518910 Variable reading of non-volatile memory
04/14/2009US7518909 Non-volatile memory device adapted to reduce coupling effect between storage elements and related methods
04/14/2009US7518908 EEPROM array and method for operation thereof
04/14/2009US7518406 Current supply circuit, ring oscillator, nonvolatile semiconductor device and electronic card and electronic device
04/09/2009WO2009046171A1 Reducing effects of program disturb in a memory device
04/09/2009WO2009045004A1 Nand memory cell array, nand flash memory having nand memory cell array, data processing method for nand flash memory
04/09/2009WO2009044302A1 Non-volatile embedded memory function
04/09/2009US20090091984 Memory configuration of a composite memory device
04/09/2009US20090091981 Nonvolatile memory device with multiple page regions, and methods of reading and precharging the same
04/09/2009US20090091979 Reliable data storage in analog memory cells in the presence of temperature variations
04/09/2009US20090091978 Wear leveling method and controller using the same
04/09/2009US20090091977 Method and system for updating a stored data value in a non-volatile memory
04/09/2009US20090091976 Integrated Circuit with Switching Unit for Memory Cell Coupling, and Method for Producing an Integrated Circuit for Memory Cell Coupling
04/09/2009US20090091975 Non-volatile memory device and operation method of the same
04/09/2009US20090091974 Methods of programming non-volatile memory cells
04/09/2009US20090091973 Reducing effects of program disturb in a memory device
04/09/2009DE10348333B4 Vorrichtung zum Verkürzen von Leseoperationen in Speichern mit löschendem Lesen Device for shortening of read operations in the erased memories Read
04/09/2009DE10217289B4 Speichervorrichtung und Verfahren zum Betreiben einer Speichervorrichtung Memory device and method of operating a memory device
04/09/2009DE102005004338B4 Phasenänderungs-Speicherbauelement und zugehöriges Programmierverfahren Phase-change memory device and associated programming method
04/08/2009EP2045815A1 Method, apparatus and computer-readable recording medium for writing data to and reading data from phase-change random access memory
04/08/2009EP2045814A1 Method and device for irreversibly programming and reading nonvolatile memory cells
04/08/2009EP1964128A4 Use of recovery transistors during write operations to prevent disturbance of unselected cells
04/08/2009EP1886317B8 Method for controlling the "first-to-melt" region in a pcm cell and devices obtained thereof
04/08/2009EP1864291A4 Method and apparatus for incorporating block redundancy in a memory array
04/08/2009CN101405816A Method for operating a memory unit
04/08/2009CN101405815A Non-volatile memory and method with redundancy data buffered in data latches for defective locations
04/08/2009CN101405814A Verify operation for non-volatile storage using different voltages
04/08/2009CN101405813A Method for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages
04/08/2009CN101405812A Programming defferently sized margins and sensing with compensations at select states for improved read operations in non-volatile memory
04/08/2009CN101405811A Flash memory with coding and signal processing
04/08/2009CN101405810A Method and system for error correction in flash memory
04/08/2009CN101404182A Program and erase methods for nonvolatile memory
04/08/2009CN101404181A Apparatus and method with compatibility of multi-layer unit and single-layer unit flash memory
04/08/2009CN101404180A Non-volatile memory device and operation method of the same
04/08/2009CN101404179A Method for improving programming speed of phase-change memory
04/08/2009CN100477282C Devices and operation methods for reducing second bit effect in memory device
04/08/2009CN100477233C Memory devices
04/08/2009CN100477231C Storage unit and operation methods for array of electric charge plunged layer
04/08/2009CN100477011C Programming method of multiple level memory cell
04/08/2009CN100477010C EEPROM programming circuit
04/08/2009CN100477009C NAND FLASH memory device
04/08/2009CN100477008C Operation method for programming charge trapping non-volatile memory and integrated circuit thereof
04/08/2009CN100477007C 半导体存储器设备 The semiconductor memory device
04/08/2009CN100477006C Programmable memory cell and operation method
04/08/2009CN100477005C Partition-supporting flash memory device
04/08/2009CN100476989C Portable data storage device
04/08/2009CN100476987C Cascode amplifier circuit for generating a fast, stable and accurate bit line voltage
04/08/2009CN100476986C Dynamic column block selection
04/07/2009US7516344 Memory system
04/07/2009US7516295 Method of remapping flash memory
04/07/2009US7516283 Memory control device, in-car device, memory control method, and computer product for managing data in response to various power states
04/07/2009US7515481 Memory block erasing in a flash memory device
04/07/2009US7515478 CMOS logic compatible non-volatile memory cell structure, operation, and array configuration
04/07/2009US7515477 Non-volatile memory device and method of programming the same
04/07/2009US7515476 Non-volatile memory device and data read method and program verify method of non-volatile memory device
04/07/2009US7515474 Step voltage generator
04/07/2009US7515473 Semiconductor memory device
04/07/2009US7515472 Page buffer circuit of flash memory device and program operation method thereof
04/07/2009US7515471 Memory with output control
04/07/2009US7515470 Semiconductor integrated circuit device
04/07/2009US7515469 Column redundancy RAM for dynamic bit replacement in FLASH memory
04/07/2009US7515465 Structures and methods to store information representable by a multiple bit binary word in electrically erasable, programmable read-only memories (EEPROM)
04/07/2009US7515450 Nonvolatile semiconductor storage device
04/04/2009CA2629752A1 Method and system for updating a stored data value in a non-volatile memory
04/02/2009WO2009042913A1 Multiple antifuse memory cells and methods to form, program, and sense the same
04/02/2009WO2009042298A1 Flash memory refresh
04/02/2009WO2009040786A1 Counter using memory cells being reset and shifted at the maximal count value
04/02/2009WO2009040784A1 Post-facto correction for cross coupling in a flash memory
04/02/2009US20090089482 Dynamic metablocks
04/02/2009US20090086549 Method for driving a nonvolatile semiconductor memory device
04/02/2009US20090086547 Circuit for performing read operation in nand flash memory and method thereof
04/02/2009US20090086546 Nonvolatile semiconductor memory device and method of writing data into the same
04/02/2009US20090086545 Non-Volatile Memory Device and Method of Operating the Same
04/02/2009US20090086544 Compensation of non-volatile memory chip non-idealities by program pulse adjustment
04/02/2009US20090086543 Highly Compact Non-Volatile Memory And Method Thereof
04/02/2009US20090086542 High Voltage Generation and Control in Source-Side Injection Programming of Non-Volatile Memory
04/02/2009US20090086541 Column redundancy ram for dynamic bit replacement in flash memory
04/02/2009US20090086540 Method of operating non-volatile memory array