| Patents for G11C 16 - Erasable programmable read-only memories (44,373) |
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| 04/23/2009 | WO2009052181A1 Controlled ramp rates for metal bitlines during write operations from high voltage driver for memory applications |
| 04/23/2009 | WO2009051960A1 Sensing of memory cells in nand flash |
| 04/23/2009 | WO2009051322A1 Apparatus and method of multi-bit programming |
| 04/23/2009 | WO2007015722A3 Addressing, command protocol, and electrical interface for non-volatile memories utilized in recording usage counts |
| 04/23/2009 | WO2006135658A3 System and method for matching resistance in a non-volatile memory |
| 04/23/2009 | US20090106582 Information processing device and information processing method for data recovery after failure |
| 04/23/2009 | US20090103371 Memory cell operation |
| 04/23/2009 | US20090103370 Efficient erase algorithm for sonos-type nand flash |
| 04/23/2009 | US20090103369 Non-Volatile Memory and Method with Shared Processing for an Aggregate of Read/Write Circuits |
| 04/23/2009 | US20090103367 One-transistor cell semiconductor on insulator random access memory |
| 04/23/2009 | US20090103366 Non-volatile memory device |
| 04/23/2009 | US20090103365 Sensing of memory cells in NAND flash |
| 04/23/2009 | US20090103363 Apparatus and associated method for making a virtual ground array structure that uses inversion bit lines |
| 04/23/2009 | US20090103362 System and method for setting access and modification for synchronous serial interface nand |
| 04/23/2009 | US20090103361 Level verification and adjustment for multi-level cell (mlc) non-volatile memory (nvm) |
| 04/23/2009 | US20090103360 Multi-Bit Flash Memory Device and Program and Read Methods Thereof |
| 04/23/2009 | US20090103359 Apparatus and method of multi-bit programming |
| 04/23/2009 | US20090103358 Reducing programming error in memory devices |
| 04/23/2009 | US20090103357 Fast single phase program algorithm for quadbit |
| 04/23/2009 | US20090103356 Non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages |
| 04/23/2009 | US20090101966 Method of identifying logical information in a programming and erasing cell by on-side reading scheme |
| 04/23/2009 | DE102008041947A1 Verfahren und Einrichtung zum irreversiblen Programmieren und Lesen nicht-flüchtiger Speicherzellen Method and apparatus for irreversible programming and reading non-volatile memory cells |
| 04/23/2009 | DE102007052217A1 Integrierter Schaltkreis mit NAND-Speicherzellen-Strängen An integrated circuit comprising NAND memory cell strings |
| 04/23/2009 | DE10023154B4 Verfahren zum Löschen programmierbarer Zusammenschaltungszellen How to delete programmable interconnection cells |
| 04/22/2009 | EP2051260A1 Method for writing data in a non volatile memory unit |
| 04/22/2009 | EP2050098A2 Eeprom charge retention circuit for time measurement |
| 04/22/2009 | EP1530795B1 Hold-up power supply for flash memory |
| 04/22/2009 | CN101416253A Reducing the impact of program disturb |
| 04/22/2009 | CN101414659A Multi-state memory unit and method for storing data state and forming memory unit |
| 04/22/2009 | CN101414658A Solid-state electrolytic solution resistance change memory and preparation method thereof |
| 04/22/2009 | CN101414486A Data storage and processing algorithm for placement of multi - level flash cell (MLC) VT |
| 04/22/2009 | CN101414485A Power supply |
| 04/22/2009 | CN101414484A 非易失性存储装置 Nonvolatile memory device |
| 04/22/2009 | CN101414483A Program and erase methods for nonvolatile memory |
| 04/22/2009 | CN101414482A Error detection method and system for CDRW |
| 04/22/2009 | CN101414479A One-transistor memory cell on insulator random access memory |
| 04/22/2009 | CN101412794A Polymeric / carbon nano-tube composite flash memory material with side chain containing carbazole, synthetic method and use |
| 04/22/2009 | CN100481517C Non-volatile memory semiconductor device having an oxide-nitride-oxide (ONO) top dielectric layer |
| 04/22/2009 | CN100481464C Self-aligned split-gate nand flash memory and fabrication process |
| 04/22/2009 | CN100481463C Flash memory with enhanced program and erase coupling and process of fabricating the same |
| 04/22/2009 | CN100481460C Method and apparatus for operating series nonvolatile memory unit |
| 04/22/2009 | CN100481459C Nand flash memory with nitride charge storage gates and fabrication process and manufacturing method thereof |
| 04/22/2009 | CN100481458C Non-volatile floating gate memory cell, and array and forming method thereof |
| 04/22/2009 | CN100481389C Programmable resistive RAM and manufacturing method thereof |
| 04/22/2009 | CN100481268C Erasing method for flash memory |
| 04/22/2009 | CN100481267C Method for using nonvolatile memory and electronic apparatus thereof |
| 04/22/2009 | CN100481266C Multi-port memory device for buffering between hosts and non-volatile memory devices |
| 04/22/2009 | CN100481265C Method for changing and reading the content in a memory |
| 04/22/2009 | CN100481264C Memory and method for operating the same |
| 04/22/2009 | CN100481263C Memory cells and identification method and memory array and detection method thereof |
| 04/22/2009 | CN100481262C Data write circuit and data write method for semiconductor storage device |
| 04/22/2009 | CN100481261C Memory and method for prolonging the service life of the memory |
| 04/22/2009 | CN100481260C Method for driving non-volatile DRAM, and unit cell therein |
| 04/22/2009 | CN100481258C Hole annealing methods of non-volatile memory cells |
| 04/22/2009 | CN100481030C Semiconductor memory preventing unauthorized copying |
| 04/22/2009 | CN100481022C Controller for controlling non-volatile storage |
| 04/21/2009 | US7523249 Direct logical block addressing flash memory mass storage architecture |
| 04/21/2009 | US7522456 Non-volatile memory embedded in a conventional logic process and methods for operating same |
| 04/21/2009 | US7522453 Non-volatile memory with source-side column select |
| 04/21/2009 | US7522452 Non-volatile semiconductor storage device |
| 04/21/2009 | US7522442 Semiconductor memory device having a plurality of chips and capability of outputting a busy signal |
| 04/16/2009 | WO2009048898A1 Non-equal threshold voltage ranges in mlc nand |
| 04/16/2009 | WO2007132457A3 Combined distortion estimation and error correction coding for memory devices |
| 04/16/2009 | WO2007132456A3 Memory device with adaptive capacity |
| 04/16/2009 | WO2007132453A3 Distortion estimation and cancellation in memory devices |
| 04/16/2009 | WO2007080586A3 Rd algorithm improvement for nrom technology |
| 04/16/2009 | WO2006118636A3 Memory structure and method of programming |
| 04/16/2009 | US20090097326 Nand flash memory device having dummy memory cells and methods of operating same |
| 04/16/2009 | US20090097325 Programming method of a non-volatile memory device |
| 04/16/2009 | US20090097324 Non-volatile memory device and a programmable voltage reference for a non-volatile memory device |
| 04/16/2009 | US20090097323 Bitline current generator for a non-volatile memory array and a non-volatile memory array |
| 04/16/2009 | US20090097322 Semiconductor memory device |
| 04/16/2009 | US20090097321 Non-volatile memory device, method of operating the same, and method of fabricating the same |
| 04/16/2009 | US20090097320 Memory Cells, Electronic Systems, Methods Of Forming Memory Cells, And Methods of Programming Memory Cells |
| 04/16/2009 | US20090097319 Applying adaptive body bias to non-volatile storage based on number of programming cycles |
| 04/16/2009 | US20090097318 Programming sequence in NAND memory |
| 04/16/2009 | US20090097317 Integrated Circuit Having NAND Memory Cell Strings |
| 04/16/2009 | US20090097316 Flash memory device |
| 04/16/2009 | US20090097315 Multibit electro-mechanical memory device and method of manufacturing the same |
| 04/16/2009 | US20090097314 Page buffer and multi-state nonvolatile memory device including the same |
| 04/16/2009 | US20090097313 Page buffer, memory device having the page buffer and method of operating the same |
| 04/16/2009 | US20090097312 Controlled ramp rates for metal bitlines during write operations from high voltage driver for memory applications |
| 04/16/2009 | US20090097311 Non-equal threshold voltage ranges in mlc nand |
| 04/16/2009 | US20090097310 Memory cell storage node length |
| 04/16/2009 | DE102005020796B4 Halbleiterspeicherbauelement und Programmierverfahren The semiconductor memory device and programming process |
| 04/16/2009 | DE102005014815B4 Datenleseverfahren und Halbleiterbauelement A data reading method, and semiconductor device |
| 04/15/2009 | EP2048709A2 Non-volatile memory device, method of operating the same, and method of fabricating the same |
| 04/15/2009 | EP2048668A1 Integrated circuit including a memory having a data inversion circuit |
| 04/15/2009 | EP2047474A2 Floating gate memory with compensating for coupling during programming |
| 04/15/2009 | EP1769509B1 Electronic device provided with a non-volatile data recordable memory |
| 04/15/2009 | EP1644964B1 Power down processing islands |
| 04/15/2009 | EP1586096B1 Current-limited latch |
| 04/15/2009 | EP1563507B1 Cascode amplifier circuit for producing a fast, stable and accurate bit line voltage |
| 04/15/2009 | CN101410909A Self-stop circuit |
| 04/15/2009 | CN101410906A Flash memory system control scheme |
| 04/15/2009 | CN101410905A Method and device for reduced read latency of non-volatile memory |
| 04/15/2009 | CN101410814A Daisy chain arrangement of non-volatile memories |
| 04/15/2009 | CN101409327A Resistive memory structure with buffer layer |
| 04/15/2009 | CN101409303A Multi-layer electrode and cross point memory array |
| 04/15/2009 | CN101409291A Nonvolatile semiconductor storage device, and method for controlling nonvolatile semiconductor storage device |