Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
05/2009
05/06/2009CN100485939C Semiconductor integrated circuit and booster circuit
05/06/2009CN100485816C Nonvolatile memory, and IC card, ID card and ID tag thereof
05/06/2009CN100485815C Page buffer circuit of flash memory device and operation method thereof
05/06/2009CN100485814C Method for operating flash memory chips
05/06/2009CN100485813C Page buffer circuit and methods for reading and programming data with the same
05/06/2009CN100485812C 信息存储设备 Information storage device
05/06/2009CN100485811C Nonvolatile semiconductor memory device and read method
05/06/2009CN100485810C Access method for logic nand flash memory chip and nand flash memory chip
05/06/2009CN100485809C Dual mode high voltage power supply for providing increased speed in programming during testing of low voltage non-volatile memories
05/06/2009CN100485642C Non-volatile memory system and method for operating the same
05/06/2009CN100485641C Non-volatile memory system and method for programming and reading update data
05/05/2009US7529951 Memory subsystem voltage control and method that reprograms a preferred operating voltage
05/05/2009US7529374 Method and apparatus for encrypting data
05/05/2009US7529145 Method for reading electrically programmable and erasable memory cells, with bit line precharge-ahead
05/05/2009US7529142 Data processing device with a WOM memory
05/05/2009US7529137 Methods of operating bandgap engineered memory
05/05/2009US7529136 Method for compacting the erased threshold voltage distribution of flash memory devices during writing operations
05/05/2009US7529135 Apparatus for controlling bitline bias voltage
05/05/2009US7529134 Flash memory devices configured to be programmed using variable initial program loops and related devices
05/05/2009US7529133 Nonvolatile semiconductor storage apparatus and readout method
05/05/2009US7529131 Nonvolatile semiconductor memory, method for reading out thereof, and memory card
05/05/2009US7529130 Semiconductor memory device
05/05/2009US7529129 Single level cell programming in a multiple level cell non-volatile memory device
05/05/2009US7529128 Integrated code and data flash memory
05/05/2009US7529127 Memory device and method thereof
05/05/2009US7529126 Nonvolatile memory device and semiconductor device
05/05/2009US7528440 Vertical gain cell
05/05/2009US7528437 EEPROMS using carbon nanotubes for cell storage
05/05/2009US7528036 Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making device
04/2009
04/30/2009WO2008150583A3 Resistive memory architectures with multiple memory cells per access device
04/30/2009WO2008004216A3 Multi-bit-per-cell flash memory device with an extended set of commands
04/30/2009US20090113166 Hashing method for nand flash memory
04/30/2009US20090109761 Method of operating nonvolatile memory device
04/30/2009US20090109759 Operating memory cells
04/30/2009US20090109758 Nonvolatile memory array partitioning architecture and method to utilize single level cells and multi level cells within said architecture
04/30/2009US20090109757 Semiconductor device and method of controlling the same
04/30/2009US20090109756 Memory device with variable trim setting
04/30/2009US20090109755 Neighbor block refresh for non-volatile memory
04/30/2009US20090109754 Non-volatile memory array architecture with joined word lines
04/30/2009US20090109752 Memory cell heights
04/30/2009US20090109751 Non-volatile multilevel memory cell programming
04/30/2009US20090109750 Semiconductor memory having both volatile and non-volatile functionality and method of operating
04/30/2009US20090109749 Nonvolatile semiconductor memory device
04/30/2009US20090109748 Apparatus and method of multi-bit programming
04/30/2009US20090109747 Fractional bits in memory cells
04/30/2009US20090109746 Memory cell programming
04/30/2009US20090109745 Non-volatile multilevel memory cells
04/30/2009US20090109744 Sensing memory cells
04/30/2009US20090109743 Multilevel memory cell operation
04/30/2009US20090109742 Control of temperature slope for band gap reference voltage in a memory device
04/30/2009US20090108247 Memory Device
04/30/2009DE102007050604A1 Integrated circuit for use in memory module, has intermediate layer arranged between electrolyte and reactive layers, where parameter of intermediate layer is selected such that crystallization of electrolyte layer is partially suppressed
04/29/2009EP2052390A2 Method and apparatus for reading a multi-level passive element memory cell array
04/29/2009EP2052389A2 Solid state storage element and method
04/29/2009EP2052300A1 Method for programming a controller in a motor vehicle
04/29/2009EP2005203A4 Power supply testing architecture
04/29/2009EP1994512A4 Rfid tag data retention verification and refresh
04/29/2009EP1974354B1 Method and apparatus for recording high-speed input data into a matrix of memory devices
04/29/2009CN101421797A Non-volatile memory and method with redundancy data buffered in remote buffer circuits
04/29/2009CN101421796A Program time adjustment as function of program voltage for improved programming speed
04/29/2009CN101421795A Method of erasing an EEPROM device
04/29/2009CN101421794A Reducing the impact of program disturb during read
04/29/2009CN101421793A NAND memory device column charging
04/29/2009CN101421792A Semiconductor device identifier generation method and semiconductor device
04/29/2009CN101420013A Resistor conversion memory cell
04/29/2009CN101419841A Erasing and writing method for FLASH memory
04/29/2009CN101419840A Data storage method for flash
04/29/2009CN101419839A Method of operating nonvolatile memory device
04/29/2009CN101419838A Method for enhancing using life of flash
04/29/2009CN101419837A Storage device and method for status information access of the storage device
04/29/2009CN101419836A Phase change RAM
04/29/2009CN101419835A Flash memory device having three-dimensional structure with improved driving system, and method of driving the same
04/29/2009CN101419834A Average abrasion method and controller using the method
04/29/2009CN100483743C Semiconductor storage device, its manufacturing method and operating method, and portable electronic apparatus
04/29/2009CN100483719C Semiconductor memory device and driving method thereof
04/29/2009CN100483557C Circuit and method for test and repair
04/29/2009CN100483552C Automated wear leveling in non-volatile storage systems
04/29/2009CN100483551C Semiconductor memory device
04/29/2009CN100483550C Special-purpose redundant circuit for different operations in internal memory device and its operation method
04/29/2009CN100483549C Complementary bit pcram sense amplifier and method of operation
04/29/2009CN100483548C EEPROM array with flash-like core
04/29/2009CN100483546C Software refreshed memory device and method
04/29/2009CN100483545C Programmable conductor random access memory and method for sensing same
04/29/2009CN100483542C Nonvolatile memory cell and non-volatile semiconductor memory device
04/29/2009CN100483540C Resistance crosspoint storage array with charge injection differential read-out amplifier
04/29/2009CN100483366C Flash controller cache architecture
04/28/2009US7526601 Data rewriting method for flash memory using partial erases
04/28/2009US7526600 Data management device and method for flash memory
04/28/2009US7526599 Method and apparatus for effectively enabling an out of sequence write process within a non-volatile memory system
04/28/2009US7526086 Editing apparatus and editing method
04/28/2009US7525852 Nonvolatile memory
04/28/2009US7525847 Semiconductor device and methods of manufacturing the same
04/28/2009US7525843 Non-volatile storage with adaptive body bias
04/28/2009US7525842 Increased NAND flash memory read throughput
04/28/2009US7525841 Programming method for NAND flash
04/28/2009US7525840 Memory array with pseudo single bit memory cell and method
04/28/2009US7525410 Point contact array, not circuit, and electronic circuit using the same
04/28/2009US7525145 Semiconductor integrated circuit device and a method of manufacturing the same
04/28/2009US7524045 Print roll assembly
04/23/2009WO2009052273A1 Memory device program window adjustment