Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
06/2009
06/11/2009US20090147583 Semiconductor memory device having mat structure
06/11/2009US20090147582 Adjusting program and erase voltages in a memory device
06/11/2009US20090147581 Nand flash memory and memory system
06/11/2009US20090147580 One-transistor floating-body dram cell device with non-volatile function
06/11/2009US20090147579 Non-volatile memory systems and methods including page read and/or configuration features
06/11/2009US20090147577 Non-volatile semiconductor latch using hot-electron injection devices
06/11/2009US20090147576 Floating gate with universal etch stop layer
06/11/2009US20090147575 Nor flash memory device with a serial sensing operation and method of sensing data bits in a nor flash memory device
06/11/2009US20090147574 Flash Memory Device for Determining Most Significant Bit Program
06/11/2009US20090147573 Faster programming of multi-level non-volatile storage through reduced verify operations
06/11/2009US20090147572 Method, apparatus, and system for erasing memory
06/11/2009US20090147571 Self-boosting system with suppression of high lateral electric fields
06/11/2009US20090147570 Use of 8-bit or higher a/d for nand cell value
06/11/2009US20090147569 Flash memory program inhibit scheme
06/10/2009EP2067169A1 Shielding floating gate tunneling element structure
06/10/2009EP2067144A2 Nonvolatile memory with soft-input soft-output (siso) decoder, statistical unit and adaptive operation
06/10/2009EP2067143A2 Memory with cell population distribution assisted read margining
06/10/2009EP2067142A2 Faster programming of highest multi-level state for non-volatile memory
06/10/2009EP1671332B1 Non-volatile memory and method with bit line to bit line coupled compensation
06/10/2009DE102008051391A1 Non-volatile, re-writable memory e.g. non-volatile memory, managing method, involves storing actual status of each memory area in respective hardware-status register, and updating status through hardware of memory chip
06/10/2009CN101454842A A method for programming and erasing an array of nmos eeprom cells that minimize bit disturbances and voltage withstand requirements for the memory array and supporting circuits
06/10/2009CN101452746A 电源切换电路 Power switching circuit
06/10/2009CN101452745A Programmer and programming method thereof
06/10/2009CN101452744A Mini side disk with plug-in resisting concatenation groove
06/10/2009CN100499124C Semiconductor device
06/10/2009CN100498974C Circuit and method for controlling boosting voltage
06/10/2009CN100498973C Method for operating non-volatile memory element
06/10/2009CN100498971C Semiconductor memory equipment and writing method of semiconductor memory equipment
06/09/2009US7545682 Erase block data splitting
06/09/2009US7545681 Segmented bitscan for verification of programming
06/09/2009US7545680 Flash memory device and word line enable method thereof
06/09/2009US7545679 Electrical erasable programmable memory transconductance testing
06/09/2009US7545678 Non-volatile storage with source bias all bit line sensing
06/09/2009US7545677 Nonvolatile memory device and methods of programming and reading the same
06/09/2009US7545676 Well bias circuit in a memory device and method of operating the same
06/09/2009US7545675 Reading non-volatile storage with efficient setup
06/09/2009US7545673 Using MLC flash as SLC by writing dummy data
06/09/2009US7544988 Semiconductor integrated circuit device and a method of manufacturing the same
06/04/2009WO2009070406A2 Method and apparatus for reading data from flash memory
06/04/2009WO2009068548A1 Integrated circuit having memory cell array including barriers, and method of manufacturing same
06/04/2009WO2009068074A1 Method for even utilization of a plurality of flash memory chips
06/04/2009WO2005006339A3 A scalable flash eeprom memory cell with notched floating gate and graded source region, and method of manufacturing the same
06/04/2009US20090141563 Method for Operating a Non-Volatile Charge-Trapping Memory Device and Method for Determining Programming/Erase Conditions
06/04/2009US20090141562 Non-volatile memory device, methods of fabricating and operating the same
06/04/2009US20090141561 Method of operating a non-volatile memory device
06/04/2009US20090141560 Flash memory device and programming method thereof
06/04/2009US20090141559 Verifying an erase threshold in a memory device
06/04/2009US20090141558 Sensing memory cells
06/04/2009US20090141557 Semiconductor memory device including stacked gate having charge accumulation layer and control gate and method of writing data to semiconductor memory device
06/04/2009US20090141556 Method of verifying programming of a nonvolatile memory device
06/04/2009US20090141555 Method of programming and erasing a p-channel be-sonos nand flash memory
06/04/2009US20090141554 Memory device having small array area
06/04/2009US20090141553 Semiconductor storage device provided with memory cell having charge accumulation layer and control gate
06/04/2009US20090141552 Memory system
06/04/2009US20090141551 Method for performing erasing operation in nonvolatile memory device
06/04/2009US20090141088 Inkjet Printhead Integrated Circuit
06/04/2009DE19849339B4 Wortleitungstreiber in einem Halbleiterspeicher Word line driver in a semiconductor memory
06/04/2009DE102008002083A1 Flash-Speichervorrichtung und Verfahren zum Programmieren A flash memory device and method for programming
06/03/2009EP2065893A1 Semiconductor integrated circuit device
06/03/2009EP1872145A4 Brown out detection circuit and method
06/03/2009EP1058930B1 A memory supporting multiple address protocols
06/03/2009CN101449335A Sonos memory device and method of operating a sonos memory device
06/03/2009CN101447231A Method for performing erasing operation in nonvolatile memory device
06/03/2009CN101447230A Programming methods for nonvolatile memory
06/03/2009CN101447229A Integrated circuit flash memory device and erase method thereof
06/03/2009CN101447228A Method for performing operations on a memory cell
06/03/2009CN101447227A Flash memory device and programming method thereof
06/03/2009CN100495710C Nonvolatile semiconductor memory device for increasing coupling ratio, and fabrication method thereof
06/03/2009CN100495574C Method and apparatus for erasing flash memory
06/03/2009CN100495573C Method of flash memory for updating data
06/03/2009CN100495572C Page buffer of flash memory device with improved program operation performance and control method
06/03/2009CN100495571C Method and apparatus for changing operating conditions of nonvolatile memory
06/03/2009CN100495420C Portable date storing device
06/02/2009US7542363 Semiconductor memory device enhancing reliability in data reading
06/02/2009US7542357 Semiconductor device
06/02/2009US7542352 Bit line precharge circuit
06/02/2009US7542351 Integrated circuit featuring a non-volatile memory with charge/discharge ramp rate control and method therefor
06/02/2009US7542350 Methods of restoring data in flash memory devices and related flash memory device memory systems
06/02/2009US7542349 Semiconductor memory device
06/02/2009US7542348 NOR flash memory including bipolar segment read circuit
06/02/2009US7542347 Semiconductor device
06/02/2009US7542346 Memory device and method for operating the same
06/02/2009US7542343 Planar NAND flash memory
06/02/2009US7542342 Multiple time programmable (MTP) PMOS floating gate-based non-volatile memory device for a general-purpose CMOS technology with thick gate oxide
06/02/2009US7542338 Method for reading a multi-level passive element memory cell array
06/02/2009US7542337 Apparatus for reading a multi-level passive element memory cell array
06/02/2009US7542336 Architecture and method for NAND flash memory
06/02/2009US7542323 Semiconductor memory device having a plurality of chips and capability of outputting a busy signal
06/02/2009US7542319 Chalcogenide glass constant current device, and its method of fabrication and operation
06/02/2009US7541637 Non-volatile semiconductor memory element and corresponding production and operation method
06/02/2009US7541242 NROM memory cell, memory array, related devices and methods
05/2009
05/28/2009WO2009067633A1 Rank modulation for memory devices
05/28/2009WO2009067624A1 Error correcting codes for rank modulation
05/28/2009WO2009067448A1 M+n bit programming and m+l bit read for m bit memory cells
05/28/2009WO2009067357A1 Mitigation of data corruption from back pattern and program disturb in a non-volatile memory device
05/28/2009WO2009067321A1 Memory controller supporting rate compatible punctured codes
05/28/2009WO2009067320A1 Fault-tolerant non-volatile integrated circuit memory
05/28/2009WO2009066204A1 Charge carrier stream generating electronic device and method
05/28/2009US20090138652 Non-volatile memory generating different read voltages
05/28/2009US20090135659 Room temperature drift suppression via soft program after erase