G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor

Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
12/2004
12/23/2004	US20040257861 Method of incorporating magnetic materials in a semiconductor manufacturing process
12/23/2004	US20040257860 Bi-directional buffering for memory data lines
12/23/2004	US20040257857 Storage system that is connected to external storage
12/23/2004	US20040257855 Magnetic memory
12/23/2004	US20040257854 Multi-level memory device and methods for programming and reading the same
12/23/2004	US20040257853 Methods of writing junction-isolated depletion mode ferroelectric memory devices
12/23/2004	US20040257852 Method of storing data in ferroelectric memory device
12/23/2004	US20040257851 Nonvolatile ferroelectric memory device having timing reference control function and method for controlling the same
12/23/2004	US20040257849 Method of reading information in a magnetic memory by a reversible resistance change in a magnetic tunnel junction
12/23/2004	US20040257759 Multi input memory device reader
12/23/2004	US20040257720 Top-pinned magnetoresistive device
12/23/2004	US20040257719 Magnetoresistive effect element, magnetic memory element magnetic memory device and manufacturing methods thereof
12/23/2004	US20040257718 Magnetoresistive device including pinned structure
12/23/2004	US20040257717 Coupled ferromagnetic systems having modified interfaces
12/23/2004	US20040257446 Image processor for digital camera
12/23/2004	US20040257406 Nozzle arrangement with an electrically heated actuator
12/23/2004	US20040257403 Micro-electromechanical valve shutter assembly
12/23/2004	US20040257306 Device and method for driving a plasma display panel
12/23/2004	US20040257164 Semiconductor integrated circuit
12/23/2004	US20040257134 Device and method for correcting the duty cycle of a clock signal
12/23/2004	US20040256694 Electrically programmable memory element with improved contacts
12/23/2004	US20040256688 Combination of intrinsic and shape anisotropy for reduced switching field fluctuations
12/23/2004	US20040256649 Ferroelectric memory device with a conductive polymer layer and a method of formation
12/23/2004	US20040256610 Chalcogenide memory device with multiple bits per cell
12/23/2004	DE10340405B3 Integrated semiconductor memory with selective reduction of effective bit line length for reducing current requirement by partial disconnection of second bit line section from first bit line section
12/23/2004	DE10323865A1 Integrierte Schaltung, insbesondere integrierter Speicher, sowie Verfahren zum Betrieb einer integrierten Schaltung Integrated circuit, particularly an integrated memory, and method for operating an integrated circuit
12/23/2004	DE10323863A1 Integrierte Schaltung und Verfahren zum Betreiben einer integrierten Schaltung Integrated circuit and method for operating an integrated circuit
12/23/2004	DE10323414A1 Solid state electrolyte memory cell has barrier layer between ion conductive material of variable resistance and the cathode
12/23/2004	DE102004025977A1 Flash-Speicherbaustein Flash memory device
12/23/2004	DE102004024841A1 Semiconductor memory device for use in super twisted nematic thin film transistor LCD, has write bit line divider connecting write-only bit lines of bit cell array blocks together based on block division control signals
12/23/2004	DE102004024612A1 Spannungserzeugungsschaltung Voltage generating circuit
12/22/2004	EP1489664A1 Tunneling magnetoresistance device, semiconductor junction device, magnetic memory, and semiconductor light-emitting device
12/22/2004	EP1489660A1 Magnetic memory device and manufacturing method thereof
12/22/2004	EP1489623A1 Multi-level memory device and methods for programming and reading the same
12/22/2004	EP1489622A1 Writing circuit for a phase change memory device
12/22/2004	EP1489621A1 Transistor-free random access memory
12/22/2004	EP1489620A2 Nonvolatile semiconductor memory device, and programming method and erasing method thereof
12/22/2004	EP1489619A2 Timing signal generating circuit, semiconductor integrated circuit device and semiconductor integrated circuit system to which the timing signal generating circuit is applied, and signal transmission system
12/22/2004	EP1488429A2 Novel method and structure for efficient data verification operation for non-volatile memories
12/22/2004	EP1488426A1 Method for producing a reference layer and an mram memory cell provided with said type of reference layer
12/22/2004	EP1488424A2 Semiconductor memory device and method for initializing the same
12/22/2004	EP1214713A4 Architecture, method(s) and circuitry for low power memories
12/22/2004	EP1116237B1 Block write circuit and method for wide data path memory devices
12/22/2004	CN1557021A Serial MRAM device
12/22/2004	CN1556999A Ferroelectric storage apparatus, driving method therefor, and driving circuit therefor
12/22/2004	CN1556998A Magnetic memory with spin-polarized current writing, using amorphous ferromagnetic alloys, writing method for same
12/22/2004	CN1556997A Magnetic memory with write inhibit selection and the writing method for same
12/22/2004	CN1556995A Segmented metal bitlines
12/22/2004	CN1556756A 一种键盘 A keyboard
12/22/2004	CN1556550A Preparation method of phase storage unit device
12/22/2004	CN1181614C Semiconductor memory with single clock signal line
12/22/2004	CN1181558C Ferroelectric transistor, its use in storage cell system and its method of production
12/22/2004	CN1181551C 2T-1C ferroelectric random access memory and its operating method
12/22/2004	CN1181547C Semiconductor IC
12/22/2004	CN1181494C Lowering device and method for peak program current
12/22/2004	CN1181493C Semiconductor storage device
12/21/2004	US6834024 Reduced size multi-port register cell
12/21/2004	US6834023 Method and apparatus for saving current in a memory device
12/21/2004	US6834022 Partial array self-refresh
12/21/2004	US6834021 Semiconductor memory having memory cells requiring refresh operation
12/21/2004	US6834020 Semiconductor storage device
12/21/2004	US6834019 Isolation device over field in a memory device
12/21/2004	US6834018 Nonvolatile memory device having data read operation with using reference cell and method thereof
12/21/2004	US6834014 Semiconductor memory systems, methods, and devices for controlling active termination
12/21/2004	US6834010 Temperature dependent write current source for magnetic tunnel junction MRAM
12/21/2004	US6834008 Cross point memory array using multiple modes of operation
12/21/2004	US6834007 Semiconductor memory device
12/21/2004	US6834006 Method and circuit for reading data from a ferroelectric memory cell
12/21/2004	US6834005 Shiftable magnetic shift register and method of using the same
12/21/2004	US6834004 Semiconductor integrated circuit having logic circuit comprising transistors with lower threshold voltage values and improved pattern layout
12/21/2004	US6833737 SOI sense amplifier method and apparatus
12/21/2004	US6833723 Semiconductor device with phase comparator comparing phases between internal signal and external signal
12/21/2004	US6833598 Spin valve transistor
12/21/2004	US6833573 Curvature anisotropy in magnetic bits for a magnetic random access memory
12/21/2004	US6833278 Low remanence flux concentrator for MRAM devices
12/16/2004	WO2004109805A1 Minute magnetic body having annular single magnetic domain structure, manufacturing method thereof, or magnetic recording element using the same
12/16/2004	WO2004109803A1 Planar polymer memory device
12/16/2004	WO2004109721A1 Magnetic semiconductor components and method for the production thereof
12/16/2004	WO2004109708A2 Nanoelectromechanical memory cells and data storage devices
12/16/2004	WO2004109707A1 Radiation-hard circuit
12/16/2004	WO2004109706A2 Nanoscale wire-based sublithographic programmable logic arrays
12/16/2004	WO2004109705A2 Ferroelectric memory device
12/16/2004	WO2004109704A1 Integrity control for data stored in a non-volatile memory
12/16/2004	WO2004109703A1 Deterministic addressing of nanoscale devices assembled at sublithographic pitches
12/16/2004	US20040255090 Tracking cells for a memory system
12/16/2004	US20040255062 Data output circuit and data output method
12/16/2004	US20040253788 Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making device
12/16/2004	US20040253787 Buried bit line non-volatile floating gate memory cell with independent controllable control gate in a trench, and array thereof, and method of formation
12/16/2004	US20040253786 Method for forming magnetic tunneling junction layer for magnetic random access memory
12/16/2004	US20040253437 Increased damping and/or decreased coercivity; a magnetic random access memory
12/16/2004	US20040252577 Semiconductor memory device capable of reading and writing data at the same time
12/16/2004	US20040252570 Magnetic thin-film memory device for quick and stable reading data
12/16/2004	US20040252561 Semiconductor integrated circuit device, IC card, and mobile terminal
12/16/2004	US20040252557 High reliable reference current generator for mram
12/16/2004	US20040252553 Magnetic memory storage device
12/16/2004	US20040252552 Nonvolatile semiconductor memory with a page mode
12/16/2004	US20040252551 Magnetic random access memory device
12/16/2004	US20040252550 Integrated circuit and method for operating an integrated circuit
12/16/2004	US20040252548 Semiconductor memory device
12/16/2004	US20040252546 SRAM cell design with high resistor CMOS gate structure for soft error rate improvement

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