G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor

Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
12/2004
12/16/2004	US20040252545 Method and circuit for eliminating charge injection from transistor switches
12/16/2004	US20040252543 Adjusting the frequency of an oscillator for use in a resistive sense amp
12/16/2004	US20040252542 Ferroelectric memory device
12/16/2004	US20040252539 Shiftable magnetic shift register and method of using the same
12/16/2004	US20040252538 System and method for writing to a magnetic shift register
12/16/2004	US20040252165 Method of fabricating an ink jet printhead chip with differential expansion actuators
12/16/2004	US20040251939 Devices for synchronizing clock signals
12/16/2004	US20040251933 Apparatus for generating driving voltage for sense amplifier in a memory device
12/16/2004	US20040251506 Hall effect devices, memory devices, and hall effect device readout voltage increasing methods
12/16/2004	US20040251484 Semiconductor integrated circuit device
12/16/2004	US20040251232 Method of fabricating a shiftable magnetic shift register
12/16/2004	DE10323237A1 Modifying time period between execution operations in DRAM, by changing set time period in direction of real time period selected during test mode
12/16/2004	DE10320793A1 Latch or phase detector circuit for DRAM data storage uses flip flop stage and cascaded NAND gates to give output depending on clock and data state change phase
12/16/2004	DE10319970A1 Circuit for accessing a RAM memory, especially an SRAM memory, has a clock pulse masking cell for suppressing access to the memory dependent on an enable signal applied to it
12/15/2004	EP1486985A2 Nonvolatile semiconductor memory device and control method thereof
12/15/2004	EP1486984A1 Data storage circuit, data write method in the data storage circuit, and data storage device
12/15/2004	EP1486983A1 Magnetic storage device using ferromagnetic tunnel junction element
12/15/2004	EP1486982A2 Latency control circuit and method of latency control
12/15/2004	EP1486952A2 Magnetic memory storage device
12/15/2004	EP1485920A1 Increasing the read signal in ferroelectric memories
12/15/2004	EP1485919A2 Method and system for maximizing dram memory bandwidth
12/15/2004	EP1301928B1 Mram architectures for increased write selectivity
12/15/2004	EP0813705B1 High precision voltage regulation circuit for programming multilevel flash memory
12/15/2004	CN1555560A Background operation for memory cells
12/15/2004	CN1555559A Selective operation of a multi-state non-volatile memory system in a binary mode
12/15/2004	CN1555063A Synchronous single nort SRAM capable of realizng synchronous double port SRAM effect and its realizing method
12/15/2004	CN1180446C Method of manufacturing spin valve structure
12/15/2004	CN1179914C Ferroelectric storage material perovskite type SrBi2 Ta2O9 ceramic powder and its preparation method
12/14/2004	US6831872 Semiconductor memory device and method for correcting a reference cell
12/14/2004	US6831870 Semiconductor memory
12/14/2004	US6831867 Semiconductor device having mechanism capable of high-speed operation
12/14/2004	US6831866 Method and apparatus for read bitline clamping for gain cell DRAM devices
12/14/2004	US6831858 Non-volatile semiconductor memory device and data write control method for the same
12/14/2004	US6831857 Magnetic memory
12/14/2004	US6831856 Method of data storage using only amorphous phase of electrically programmable phase-change memory element
12/14/2004	US6831855 Magnetic memory
12/14/2004	US6831854 Cross point memory array using distinct voltages
12/14/2004	US6831852 Semiconductor memory device having a latch circuit and storage capacitor
12/14/2004	US6831681 Preprinted print rolls for use in an image processing device
12/14/2004	US6831502 Internal power-source potential supply circuit, step-up potential generating system, output potential supply circuit, and semiconductor memory
12/14/2004	US6831484 Semiconductor integrated circuit having logic circuit comprising transistors with lower threshold voltage values and improved pattern layout
12/14/2004	US6831314 Magnetoresistive effect element and magnetic memory device
12/14/2004	US6831313 Ferroelectric composite material, method of making same and memory utilizing same
12/14/2004	US6831312 Amorphous alloys for magnetic devices
12/14/2004	US6830395 User interface with integrated printing
12/14/2004	US6830316 Ink jet printing mechanism that incorporates a shape memory alloy
12/09/2004	WO2004107466A1 Electric switch and storage device using same
12/09/2004	WO2004107407A2 Method of making information storage devices by molecular photolithography
12/09/2004	WO2004107351A1 Memory with charge storage locations
12/09/2004	WO2004107350A1 Ferroelectric memory
12/09/2004	WO2004107349A1 Integrated charge sensing scheme for resistive memories
12/09/2004	WO2004107348A1 Circuit configuration for a current switch of a bit/word line of a mram device
12/09/2004	WO2004025661A3 Static random access memory with symmetric leakage-compensated bit line
12/09/2004	US20040250184 Apparatus and method for a radiation resistant latch with integrated scan
12/09/2004	US20040250165 Semiconductor memory device permitting boundary scan test
12/09/2004	US20040247362 Keyboard
12/09/2004	US20040247241 Information register
12/09/2004	US20040246812 Decode path gated low active power SRAM
12/09/2004	US20040246807 Multi-port memory device with stacked banks
12/09/2004	US20040246805 Semiconductor memory device capable of controlling potential level of power supply line and/or ground line
12/09/2004	US20040246804 Device and method for pulse width control in a phase change memory device
12/09/2004	US20040246802 Refreshing dynamic memory cells in a memory circuit and a memory circuit
12/09/2004	US20040246801 Integrated circuit memory devices and operating methods that are configured to output data bits at a lower rate in a test mode of operation
12/09/2004	US20040246798 Novel multi-state memory
12/09/2004	US20040246797 Semiconductor device and test method of testing the same
12/09/2004	US20040246793 Semiconductor memory device
12/09/2004	US20040246792 Integrated memory circuit having a redundancy circuit and a method for replacing a memory area
12/09/2004	US20040246790 Driving a DRAM sense amplifier having low threshold voltage PMOS transistors
12/09/2004	US20040246788 Magnetoresistive device and magnetic memory device
12/09/2004	US20040246787 Semiconductor integrated circuit and method for fabricating the same
12/09/2004	US20040246786 Memory channel having deskew separate from redrive
12/09/2004	US20040246785 Memory channel with redundant presence detect
12/09/2004	US20040246783 High burst rate write data paths for integrated circuit memory devices and methods of operating same
12/09/2004	US20040246778 Two terminal silicon based negative differential resistance device
12/09/2004	US20040246777 Magnetic recording element and method of manufacturing magnetic recording element
12/09/2004	US20040246776 Magnetic random access memory having flux closure for the free layer and spin transfer write mechanism
12/09/2004	US20040246775 Hybrid write mechanism for high speed and high density magnetic random access memory
12/09/2004	US20040246774 Memory system
12/09/2004	US20040246772 Method and semiconductor integrated circuit for detecting soft defects in static memory cell
12/09/2004	US20040246771 Method of transferring data
12/09/2004	US20040246770 Organic distable element, organic distable memory device using the same, and process for driving the same
12/09/2004	US20040246768 Memory cell
12/09/2004	US20040246765 Integrated circuit, semiconductor device comprising the same, electronic device having the same, and driving method of the same
12/09/2004	US20040246764 Method of making memory cell utilizing negative differential resistance devices
12/09/2004	US20040246763 Semiconductor memory device
12/09/2004	US20040246761 Data reading method, data writing method, and semiconductor memory device
12/09/2004	US20040246631 Spin valve magnetoresistive device with enhanced performance
12/09/2004	US20040246311 Inkjet printhead with heater element close to drive circuits
12/09/2004	US20040245603 Electrically programmable memory element with improved contacts
12/09/2004	US20040245577 SRAM devices, and electronic systems comprising SRAM devices
12/09/2004	US20040245567 Nonvolatile semiconductor memory device
12/09/2004	US20040245566 Semiconductor integrated circuit and method for detecting soft defects in static memory cell
12/09/2004	US20040245557 Nonvolatile memory device comprising one switching device and one resistant material and method of manufacturing the same
12/09/2004	US20040245554 Phase random access memory with high density
12/09/2004	US20040245553 Magnetoresistive effect element and magnetic memory device
12/09/2004	US20040245547 Ultra low-cost solid-state memory
12/09/2004	US20040245522 Control of memory arrays utilizing zener diode-like devices
12/09/2004	US20040245510 May be a pyrochlore type oxide of a rare earth element, some of which may be replaced by an alkaline earth metal, and a transition metal, e.g., Nd2Mo2O7; disks, memory devices and pictures or image displays with a storage capacity of several terabits per square inch or more
12/09/2004	US20040245492 ABO3 with an A-site compensation component that compensates for a vacancy of an A site, and a B-site compensation component which compensates for a vacancy of a B site; film having hysteresis characteristics with excellent squareness loop which can be used for the simple matrix type ferroelectric memory
12/09/2004	DE10360969A1 Verfahren zum Trockenätzen eines mehrlagigen Schichtmaterials A method for dry etching of a multilayer coating material

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