| Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008) |
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| 02/02/2006 | US20060023498 Magnetic memory device using SOI substrate and method of manufacturing the same |
| 02/02/2006 | US20060023497 Nonvolatile semiconductor memory device and read method |
| 02/02/2006 | US20060023496 Tunable magnetic switch |
| 02/02/2006 | US20060023495 High-density NVRAM |
| 02/02/2006 | US20060023494 Twin-cell semiconductor memory devices |
| 02/02/2006 | US20060023493 Apparatus and method to reduce undesirable effects caused by a fault in a memory device |
| 02/02/2006 | US20060023492 Vortex magnetic random access memory |
| 02/02/2006 | US20060023491 Method and device for improved magnetic field generation during a write operation of a magnetoresistive memory device |
| 02/02/2006 | US20060023490 Magnetic memory architecture with shared current line |
| 02/02/2006 | US20060023489 Current re-routing scheme for serial-programmed mram |
| 02/02/2006 | US20060023488 Semiconductor memory device |
| 02/02/2006 | US20060023487 Method of operating dynamic random access memory |
| 02/02/2006 | US20060023486 High-assurance processor active memory content protection |
| 02/02/2006 | US20060023485 Ferroelectric memory device and electronic apparatus |
| 02/02/2006 | US20060023484 Ferroelectric random access memory device |
| 02/02/2006 | US20060023019 Printer assembly with a capping arrangement |
| 02/02/2006 | US20060022704 Reconfigurable electronic device having interconnected data storage devices |
| 02/02/2006 | US20060022227 Novel buffer (seed) layer in a high performance magnetic tunneling junction MRAM |
| 02/02/2006 | DE19730347B4 Statische Halbleitervorrichtung, die eine variable Stromversorgungsspannung, die an eine Speicherzelle angelegt wird, abhängig von dem Status im Gebrauch aufweist, und Verfahren zum Testen derselben Static semiconductor device, which, depending has a variable power supply voltage, which is applied to a memory cell from the state in use, and methods of testing same |
| 02/02/2006 | DE19612407B4 Halbleiterspeichereinrichtung A semiconductor memory device |
| 02/02/2006 | DE102005032466A1 Semiconductor memory device e.g. dynamic random access memory device, has isolation transistor isolating bit line from sense amplifier for connection after charge is transferred, where transistor activation is delayed |
| 02/02/2006 | DE102005028946A1 Verfahren und Vorrichtung zum Erzeugen eines Arbeitszyklus-bezogenen Ausgangssignals Method and apparatus for generating a duty-cycle-related output signal |
| 02/02/2006 | DE102004059327A1 Voltage providing apparatus for e.g. dynamic random access memory has switching network which couples shared capacitor to respective high and low nodes for selected voltage sources depending on bit organization of semiconductor device |
| 02/02/2006 | DE102004033387A1 Digitale RAM-Speicherschaltung mit erweiterter Befehlsstruktur Digital RAM memory circuit with extended command structure |
| 02/02/2006 | DE102004014927B4 Integrierbare, steuerbare Verzögerungseinrichtung, Verwendung einer Verzögerungseinrichtung sowie integrierbarer Multiplexer zur Verwendung in einer Verzögerungseinrichtung Integrable controllable delay device, using a delay device and integratable multiplexer for use in a delay |
| 02/02/2006 | CA2573406A1 Tunable magnetic switch |
| 02/01/2006 | EP1622162A1 Ferroelectric memory and method for reading its data |
| 02/01/2006 | EP1622161A2 Vortex magnetic random access memory |
| 02/01/2006 | EP1622160A2 Magnetic film structure using spin charge, method of manufacturing the same, semiconductor device having the same, and method of operating the semiconductor device |
| 02/01/2006 | CN1729541A Tamper-resistant packaging and approach |
| 02/01/2006 | CN1729540A Tamper-resistant packaging and approach |
| 02/01/2006 | CN1729539A Method and device for protection of an MRAM device against tampering |
| 02/01/2006 | CN1729538A Bilayer CMP process to improve surface roughness of magnetic stack in MRAM technology |
| 02/01/2006 | CN1729537A Magnetoresistive random access memory with reduced switching field |
| 02/01/2006 | CN1728280A Semiconductor memory,access architecture and operating method |
| 02/01/2006 | CN1728279A Bit line sense amplifier and semiconductor memory device having the same |
| 02/01/2006 | CN1728278A Method of operating a semiconductor device and the semiconductor device |
| 02/01/2006 | CN1728277A 半导体存储装置和刷新周期控制方法 The semiconductor memory device and a refresh cycle control method |
| 02/01/2006 | CN1240133C Semiconductor device and its mfg. method |
| 02/01/2006 | CN1240132C Memory device mfg. and assembling structure and method |
| 02/01/2006 | CN1240076C Semiconductor storage device |
| 01/31/2006 | USRE38955 Memory device having a relatively wide data bus |
| 01/31/2006 | US6993696 Semiconductor memory device with built-in self test circuit operating at high rate |
| 01/31/2006 | US6993691 Series connected TC unit type ferroelectric RAM and test method thereof |
| 01/31/2006 | US6992949 Method and circuit for controlling generation of column selection line signal |
| 01/31/2006 | US6992948 Memory device having address generating circuit using phase adjustment by sampling divided clock to generate address signal of several bits having one bit changed in sequential order |
| 01/31/2006 | US6992946 Semiconductor device with reduced current consumption in standby state |
| 01/31/2006 | US6992945 Fuse circuit |
| 01/31/2006 | US6992944 Semiconductor memory device with reduced power consumption for refresh operation |
| 01/31/2006 | US6992943 System and method for performing partial array self-refresh operation in a semiconductor memory device |
| 01/31/2006 | US6992942 Cell leakage monitoring circuit and monitoring method |
| 01/31/2006 | US6992939 Method and apparatus for identifying short circuits in an integrated circuit device |
| 01/31/2006 | US6992937 Column redundancy for digital multilevel nonvolatile memory |
| 01/31/2006 | US6992936 Semiconductor, memory card, and data processing system |
| 01/31/2006 | US6992935 Nonvolatile memory device efficiently changing functions of field programmable gate array at high speed |
| 01/31/2006 | US6992933 Programming verification method of nonvolatile memory cell, semiconductor memory device, and portable electronic apparatus having the semiconductor memory device |
| 01/31/2006 | US6992932 Method circuit and system for read error detection in a non-volatile memory array |
| 01/31/2006 | US6992930 Semiconductor memory device, method for driving the same and portable electronic apparatus |
| 01/31/2006 | US6992928 Semiconductor memory device with an improved memory cell structure and method of operating the same |
| 01/31/2006 | US6992925 High density semiconductor memory cell and memory array using a single transistor and having counter-doped poly and buried diffusion wordline |
| 01/31/2006 | US6992924 Magnetic memory and method for optimizing write current in a magnetic memory |
| 01/31/2006 | US6992923 Single transistor type magnetic random access memory device and method of operating and manufacturing the same |
| 01/31/2006 | US6992922 Cross point memory array exhibiting a characteristic hysteresis |
| 01/31/2006 | US6992921 Magnetic random access memory and data write method for the same |
| 01/31/2006 | US6992920 Nonvolatile semiconductor memory device, and programming method and erasing method thereof |
| 01/31/2006 | US6992919 All-metal three-dimensional circuits and memories |
| 01/31/2006 | US6992918 Methods of increasing write selectivity in an MRAM |
| 01/31/2006 | US6992917 Integrated circuit with reduced body effect sensitivity |
| 01/31/2006 | US6992916 SRAM cell design with high resistor CMOS gate structure for soft error rate improvement |
| 01/31/2006 | US6992915 Self reverse bias low-power high-performance storage circuitry and related methods |
| 01/31/2006 | US6992914 Ferroelectric-type nonvolatile semiconductor memory |
| 01/31/2006 | US6992913 Ferroelectric storage device |
| 01/31/2006 | US6992912 Nonvolatile ferroelectric memory device having timing reference control function and method for controlling the same |
| 01/31/2006 | US6992911 Semiconductor memory device |
| 01/31/2006 | US6992909 Multi-bit ROM cell, for storing one of n>4 possible states and having bi-directional read, an array of such cells, and a method for making the array |
| 01/31/2006 | US6992868 Magnetoresistive effect element and magnetic memory device |
| 01/31/2006 | US6992534 Circuits and methods of temperature compensation for refresh oscillator |
| 01/31/2006 | US6992514 Synchronous mirror delay circuit and semiconductor integrated circuit device having the same |
| 01/31/2006 | US6992511 Output buffer circuit |
| 01/31/2006 | US6992359 Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization |
| 01/31/2006 | US6992345 Integrated semiconductor memory with a selection transistor formed at a ridge |
| 01/31/2006 | US6992343 Semiconductor memory device |
| 01/31/2006 | US6992339 Asymmetric memory cell |
| 01/31/2006 | US6992323 Memory cell |
| 01/26/2006 | WO2006009462A1 An organic ferroelectric or electret device with via connections and a method for its manufacture |
| 01/26/2006 | WO2006009461A1 An organic ferroelectric or electret memory circuit and a method for making same |
| 01/26/2006 | WO2006008467A1 Self-switching memory device |
| 01/26/2006 | WO2005089465A3 Electromechanical three-trace junction devices |
| 01/26/2006 | WO2004114428A3 Magnetoresistance effect element and manufacturing method therof |
| 01/26/2006 | US20060018185 Memory control apparatus and electronic apparatus |
| 01/26/2006 | US20060018173 Method for using non-volatile memory and electronics device thereof |
| 01/26/2006 | US20060018167 Flash memory device capable of reducing test time and test method thereof |
| 01/26/2006 | US20060018164 Nor-type channel-program channel-erase contactless flash memory on SOI |
| 01/26/2006 | US20060018158 Memory devices and programming methods that simultaneously store and erase status indications for memory blocks |
| 01/26/2006 | US20060018157 Semiconductor memory device |
| 01/26/2006 | US20060018154 Partial permanent write protection of a memory card and partially permanently write protected memory card |
| 01/26/2006 | US20060018151 Ferroelectric memory device and its driving method |
| 01/26/2006 | US20060018150 Antiferromagnetically stabilized pseudo spin valve for memory applications |
| 01/26/2006 | US20060018149 Two terminal memory array having reference cells |
| 01/26/2006 | US20060018148 Method and device to detect the likely onset of thermal relaxation in magnetic data storage devices |