Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
04/2006
04/04/2006US7023056 Memory cell structure
04/04/2006US7023054 Semiconductor storage device and semiconductor integrated circuit
04/04/2006US7023009 Electrically programmable memory element with improved contacts
04/04/2006US7022572 Manufacturing method for integrated circuit having disturb-free programming of passive element memory cells
04/04/2006US7022568 Semiconductor integrated circuit device and process for manufacturing the same
04/04/2006US7022250 Method of fabricating an ink jet printhead chip with differential expansion actuators
03/2006
03/30/2006WO2006033581A1 Read method and sensing device
03/30/2006WO2006033099A2 States encoding in multi-bit flash cells for optimizing error rate
03/30/2006WO2005079348A3 Method and system for providing heat assisted switching of a magnetic element utilizing spin transfer
03/30/2006WO2005048296A3 Nanotube-based switching elements with multiple controls and circuits made from same
03/30/2006WO2005031748A8 Oblique reflector normal incidence collector system for light sources, in particular for euv plasma discharge sources
03/30/2006US20060069895 Method, system and memory controller utilizing adjustable write data delay settings
03/30/2006US20060069856 Memory controller method and system compensating for memory cell data losses
03/30/2006US20060067158 Integrated circuit memory device supporting an N bit prefetch scheme and a 2N burst length
03/30/2006US20060067142 Shift redundancy circuit, method for controlling shift redundancy circuit, and semiconductor memory device
03/30/2006US20060067139 Memory
03/30/2006US20060067130 Nonvolatile memory devices including overlapped data sensing and verification and methods of verifying data in nonvolatile memory devices
03/30/2006US20060067128 Flash memory
03/30/2006US20060067127 Method of programming a monolithic three-dimensional memory
03/30/2006US20060067126 Floating-body memory cell write
03/30/2006US20060067125 Programming and erasing method for charge-trapping memory devices
03/30/2006US20060067123 Serial flash semiconductor memory
03/30/2006US20060067122 Charge-trapping memory cell
03/30/2006US20060067121 Variable current sinking for coarse/fine programming of non-volatile memory
03/30/2006US20060067117 Fuse memory cell comprising a diode, the diode serving as the fuse element
03/30/2006US20060067116 Low power consumption magnetic memory and magnetic information recording device
03/30/2006US20060067115 MRAM with improved storage and read out characteristics
03/30/2006US20060067114 Storage apparatus and semiconductor apparatus
03/30/2006US20060067113 Methods for fabricating a magnetic keeper for a memory device
03/30/2006US20060067112 Resistive memory cell random access memory device and method of fabrication
03/30/2006US20060067111 Magnetic storage cell, magnetic memory device and magnetic memory device manufacturing method
03/30/2006US20060067110 SRAM cell with horizontal merged devices
03/30/2006US20060067109 Sram cell power reduction circuit
03/30/2006US20060067108 Bitcell having a unity beta ratio
03/30/2006US20060067107 Integrated semiconductor memory
03/30/2006US20060067106 Storage device and semiconductor device
03/30/2006US20060067105 Control of memory devices possessing variable resistance characteristics
03/30/2006US20060067104 Complementary output resistive memory cell
03/30/2006US20060067103 Resistive memory cell configuration and method for sensing resistance values
03/30/2006US20060067102 Non-volatile logic circuit and system LSI having the same
03/30/2006US20060067101 Memory
03/30/2006US20060067100 Semiconductor storage device
03/30/2006US20060066680 Micro-electromechanical liquid ejection device with motion amplification
03/30/2006US20060065920 Semiconductor memory device and method for producing the same
03/30/2006US20060065746 Semiconductor memory device
03/30/2006DE10211932B9 Schaltungsanordnung zum Auslesen, Bewerten und Wiedereinlesen eines Ladungszustandes in eine Speicherzelle Circuitry for reading, evaluating and re-reading a charge state in a memory cell
03/30/2006DE102005035760A1 Semiconductor memory device e.g. dynamic random access memory, has local sense amplifier amplifying voltages of data signals and transmitting data to global I/O lines in response to local sense control signal
03/30/2006DE102004050927A1 Nichtflüchtiges Halbleiterspeicherbauelement The non-volatile semiconductor memory device
03/30/2006DE102004044721A1 Selbsttest für die Phasenlage des Datenleseclocksignals DQS Self-test for the phase of the data read clock signal DQS
03/30/2006DE102004043857B3 DRAM-Zellenpaar und DRAM-Speicherzellenfeld mit Stack- und Trench-Speicherzellen sowie Verfahren zur Herstellung eines DRAM-Speicherzellenfeldes DRAM cell pair and DRAM memory cell array with a stack and trench memory cells and method of manufacturing a DRAM memory cell array
03/30/2006DE102004043856A1 Verfahren zur Herstellung einer Speicherzellenanordnung und Speicherzellenanordnung A method for fabricating a memory cell array and memory cell arrangement
03/29/2006EP1640994A1 A memory device with unipolar and bipolar selectors
03/29/2006EP1640993A2 Magnetic storage device
03/29/2006EP1640992A2 Magnetic storage device
03/29/2006EP1640872A1 Data transfer method and system
03/29/2006EP1640847A2 Dynamic random access memory (DRAM) semiconductor device
03/29/2006EP1639656A2 Thermally operated switch control memory cell
03/29/2006EP1639653A1 Self-aligned conductive lines for fet-based magnetic random access memory devices and method of forming the same
03/29/2006EP1639604A1 Method and apparatus for partial refreshing of drams
03/29/2006EP1639576A2 Memory controller and data driver for flat panel display
03/29/2006EP1639467A2 Safe write to multiply-redundant storage
03/29/2006EP1425182A4 An ink distribution assembly for an ink jet printhead
03/29/2006CN1754230A Non-volatile semiconductor memory with large erase blocks storing cycle counts
03/29/2006CN1753103A Integrated circuit memory devices having hierarchical bit line selection circuits therein
03/29/2006CN1753102A Memory cell structure of sram
03/29/2006CN1248237C Improved high density memory cell
03/29/2006CN1248236C Semiconductor memory
03/29/2006CN1248235C Semiconductor storage circuit not easy to make soft mistakes
03/29/2006CN1248234C Semiconductor device
03/28/2006US7020794 Interleaved delay line for phase locked and delay locked loops
03/28/2006US7020757 Providing an arrangement of memory devices to enable high-speed data access
03/28/2006US7020740 Computer arrangement using non-refreshed DRAM
03/28/2006US7020228 DLL circuit
03/28/2006US7020041 Method and apparatus to clamp SRAM supply voltage
03/28/2006US7020040 Utilizing an ACPI to maintain data stored in a DRAM
03/28/2006US7020039 Isolation device over field in a memory device
03/28/2006US7020038 Efficient refresh operation for semiconductor memory devices
03/28/2006US7020037 Nonvolatile semiconductor memory device
03/28/2006US7020031 Synchronous semiconductor memory devices and data strobe input buffers with an input buffer circuit and a detection circuit for buffering data thereto
03/28/2006US7020030 SRAM cell with horizontal merged devices
03/28/2006US7020026 Bitline governed approach for program control of non-volatile memory
03/28/2006US7020025 Nonvolatile semiconductor memory
03/28/2006US7020019 System and method for destructive purge of memory device
03/28/2006US7020016 Random access memory cell and method for fabricating same
03/28/2006US7020015 Magnetic elements having unique shapes
03/28/2006US7020014 Circuit and method for temperature tracing of devices including an element of chalcogenic material, in particular phase change memory devices
03/28/2006US7020013 Magnetic field sensor using spin polarized current
03/28/2006US7020012 Cross point array using distinct voltages
03/28/2006US7020011 High density magnetoresistance memory and manufacturing method thereof
03/28/2006US7020010 Magnetic storage apparatus using ferromagnetic tunnel junction devices
03/28/2006US7020009 Bistable magnetic device using soft magnetic intermediary material
03/28/2006US7020008 Thin film magnetic memory device writing data with bidirectional current
03/28/2006US7020007 Non-volatile static random access memory
03/28/2006US7020006 Discharge of conductive array lines in fast memory
03/28/2006US7020005 Non-switching pre- and post- disturb compensational pulses
03/28/2006US7020004 Double density MRAM with planar processing
03/28/2006US7020003 Device and method for compensating defect in semiconductor memory
03/28/2006US7020001 Multi-level semiconductor memory architecture and method of forming the same
03/28/2006US7019998 Unified multilevel cell memory
03/28/2006US7019381 Method of providing multiple logical bits per memory cell