Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
03/2006
03/21/2006US7016161 Magnetic head, magnetic head gimbal assembly, magnetic recording and reproducing apparatus, and magnetic memory
03/21/2006US7015795 Self-identifying integrated circuits and method for fabrication thereof
03/21/2006US7015717 Signal transmitting device suited to fast signal transmission
03/21/2006US7015555 Magnetoresistive random access memory with high selectivity
03/21/2006US7015540 Semiconductor memory device
03/21/2006US7015530 Electronic systems comprising memory devices
03/21/2006US7015524 Method of etching magnetic material, magnetoresistive film and magnetic random access memory
03/21/2006US7015504 Sidewall formation for high density polymer memory element array
03/21/2006US7015059 Thin film magnetic memory device and manufacturing method therefor
03/16/2006WO2006027920A1 Nonvolatile semiconductor storage device
03/16/2006WO2006027373A1 Current sense amplifier
03/16/2006WO2006002278A3 Apparatus and method for improving dynamic refresh in a semiconductor memory device with reduced stanby power
03/16/2006WO2004036554A3 Phase change media for high density data storage
03/16/2006US20060059393 Redundancy register architecture for soft-error tolerance and methods of making the same
03/16/2006US20060057745 Novel oxidation structure/method to fabricate a high-performance magnetic tunneling junction MRAM
03/16/2006US20060056728 User interface for an image transformation device
03/16/2006US20060056260 Memory controller method and system compensating for memory cell data losses
03/16/2006US20060056259 Memory controller method and system compensating for memory cell data losses
03/16/2006US20060056258 Semiconductor memory and method for operating the same
03/16/2006US20060056250 Magnetic memory, and its operating method
03/16/2006US20060056239 Method for programming memory cells including transconductance degradation detection
03/16/2006US20060056238 Flash memory devices having a voltage trimming circuit and methods of operating the same
03/16/2006US20060056236 Thin film magnetic memory device having a highly integrated memory array
03/16/2006US20060056235 Electrical memory component and a method of construction thereof
03/16/2006US20060056234 Using a phase change memory as a shadow RAM
03/16/2006US20060056233 Using a phase change memory as a replacement for a buffered flash memory
03/16/2006US20060056232 Magnetic memory and manufacturing method thereof
03/16/2006US20060056231 Multivibrator protected against current or voltage spikes
03/16/2006US20060056230 Implementation of a multivibrator protected against current or voltage spikes
03/16/2006US20060056229 Semiconductor integrated circuite device
03/16/2006US20060056228 Transistor, memory cell array and method of manufacturing a transistor
03/16/2006US20060056227 One time programmable phase change memory
03/16/2006US20060056226 Over-driven access method and device for ferroelectric memory
03/16/2006US20060056225 Ferroelectric memory device
03/16/2006US20060056224 Ferromagnetic random access memory
03/16/2006US20060056223 Mram-cell and array-architecture with maximum read-out signal and reduced electromagnetic interference
03/16/2006US20060056221 Readout circuit, solid state image pickup device using the same circuit, and camera system using the same
03/16/2006US20060056220 SRAM memory cell protected against current or voltage spikes
03/16/2006US20060056115 Magnetoresistance effect device and method of production of the same
03/16/2006US20060055782 Optical data card reader
03/16/2006US20060055756 Wide format printer with a plurality of printhead integrated circuits
03/16/2006US20060055733 Double-action micro-electromechanical device
03/16/2006US20060054971 Memory cell without halo implant
03/16/2006US20060054965 Byte-operational nonvolatile semiconductor memory device
03/16/2006US20060054962 Method to minimize formation of recess at surface planarized by chemical mechanical planarization
03/16/2006US20060054957 Nonvolatile semiconductor memory and manufacturing method for the same
03/16/2006US20060054956 Technique to control tunneling currents in DRAM capacitors, cells, and devices
03/16/2006US20060054933 Asymmetric memory cell
03/16/2006DE19756928B4 Verfahren zum Übersteuern eines Bitleitungs-Leseverstärkers A method of controlling a bit line sense amplifier
03/16/2006DE10345491B4 Takt-Receiver-Schaltungsanordnung, insbesondere für Halbleiter-Bauelemente Clock receiver circuit arrangement, in particular for semi-conductor components
03/16/2006DE102005025940A1 Auffüllung einer internen Spannung Fill an internal voltage
03/16/2006DE102005001668A1 Memory circuit, has reference value unit generating reference value dependent on temperature of material, and comparator finding condition of memory cell depending on comparison result of electrical valve and reference value
03/16/2006DE102004043902A1 Field effect transistor for dynamic random access memory cell, has gate dielectric layer with terminal dielectric layer having thickness greater than gate dielectric layer-thickness
03/16/2006DE10110707B4 Ferroelektrischer Speicher mit Referenzzellen-Auswahlschaltung und 2T1C-Speicherzellen A ferroelectric memory with reference cell selection circuit and 2T1C memory cells
03/15/2006EP1635356A1 Magnetic memory with magnetic yoke
03/15/2006EP1634333A2 STACKED 1T- i n /i MEMORY CELL STRUCTURE
03/15/2006EP1634301A1 Methods and apparatus for measuring current as in sensing a memory cell
03/15/2006EP1634299A1 Integrity control for data stored in a non-volatile memory
03/15/2006EP1634298A2 Cross-point mram array with reduced voltage drop across mtj's
03/15/2006EP1634297A1 Combination of intrinsic and shape anisotropy for reduced switching field fluctuations
03/15/2006EP1634296A2 Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
03/15/2006EP1634294A2 Bi-directional buffering for memory data lines
03/15/2006EP1407449B1 Data storage medium with laterally magnetised pads and method for making same
03/15/2006CN1748199A Logical calculation circuit, logical calculation device, and logical calculation method
03/15/2006CN1748198A Storage device and information processing system
03/15/2006CN1747151A Method and apparatus for operating a string of charge trapping memory cells
03/15/2006CN1747067A Circuit and method of driving bitlines of integrated circuit memory
03/15/2006CN1747066A Semiconductor memory device having local sense amplifier with on/off control
03/15/2006CN1747065A Methods and circuits for generating reference voltage
03/15/2006CN1747064A Semiconductor storage and method for testing the same
03/15/2006CN1747063A Semiconductor memory devices and method of sensing bit line thereof
03/15/2006CN1747062A Semiconductor memory device
03/15/2006CN1747061A Ferroelectric memory
03/15/2006CN1747060A Methods of operating magnetic random access memory device using spin injection and related devices
03/15/2006CN1747059A Magnetic film structure, method of manufacturing the same, semiconductor device having the same, and method of operating the semiconductor device
03/15/2006CN1747058A Phase-change memory device with current control and its control method
03/15/2006CN1747056A Semiconductor memory apparatus and activation signal generation method for sense amplifier
03/15/2006CN1746979A Method for reactive sputter deposition of a magnesium oxide (mgo) tunnel barrier in a magnetic tunnel junction
03/15/2006CN1245764C Ferroelectric memory transistor and its forming method
03/15/2006CN1245762C Reluctance storage element
03/15/2006CN1245761C Non-destructive read-out ferroelectric non-volatile multiple state data storaging mode and its storage unit
03/15/2006CN1245721C Data reading out/recording method and driving method of semiconductor memory device
03/14/2006US7013413 Method for compressing output data and a packet command driving type memory device
03/14/2006US7013374 Integrated memory and method for setting the latency in the integrated memory
03/14/2006US7013369 Memory control circuit outputting contents of a control register
03/14/2006US7013363 Method and circuit for adjusting a self-refresh rate to maintain dynamic data at low supply voltages
03/14/2006US7012851 Nonvolatile ferroelectric memory device with split word lines
03/14/2006US7012850 High speed DRAM architecture with uniform access latency
03/14/2006US7012849 Semiconductor, image output device, and driving method of a functional device
03/14/2006US7012848 Semiconductor integrated circuit device
03/14/2006US7012843 Device for driving a memory cell of a memory module by means of a charge store
03/14/2006US7012842 Enhanced read and write methods for negative differential resistance (NDR) based memory device
03/14/2006US7012833 Integrated circuit having negative differential resistance (NDR) devices with varied peak-to-valley ratios (PVRs)
03/14/2006US7012832 Magnetic memory cell with plural read transistors
03/14/2006US7012831 Semiconductor memory device
03/14/2006US7012830 Semiconductor memory device
03/14/2006US7012829 Ferroelectric memory and data reading method for same
03/14/2006US7012828 Data control device using a nonvolatile ferroelectric memory
03/14/2006US7012826 Bitline twisting structure for memory arrays incorporating reference wordlines
03/14/2006US7012592 Spatial light modulator with charge-pump pixel cell