| Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008) |
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| 10/03/2006 | US7116577 Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping |
| 10/03/2006 | US7116576 Sensing the state of a storage cell including a magnetic element |
| 10/03/2006 | US7116575 Architectures for CPP ring shaped (RS) devices |
| 10/03/2006 | US7116574 Semiconductor memory device |
| 10/03/2006 | US7116573 Switching element method of driving switching element rewritable logic integrated circuit and memory |
| 10/03/2006 | US7116572 Circuit for generating a centered reference voltage for a 1T/1C ferroelectric memory |
| 10/03/2006 | US7116570 Access circuit and method for allowing external test voltage to be applied to isolated wells |
| 10/03/2006 | US7116146 Digital DLL device, digital DLL control method, and digital DLL control program |
| 10/03/2006 | US7116141 Frequency-doubling delay locked loop |
| 10/03/2006 | US7115901 Non-volatile electromechanical field effect devices and circuits using same and methods of forming same |
| 10/03/2006 | US7115473 Method of fabrication of non-volatile memory |
| 10/03/2006 | US7115470 Methods of fabricating flash memory cell having split-gate structure using spacer oxidation process |
| 10/03/2006 | US7114240 Forming silicon dioxide layer and a plurality of magnetoresistive layers above; ferromagnetic and/or nonmagnetic layers; etch stopping with titanium nitride; surrounding with an oxygen barrier comprising silicon nitride; etching; |
| 09/28/2006 | WO2006101547A1 Proton and heavy ion seu resistant sram |
| 09/28/2006 | WO2006101500A1 Non-volatile memory and method with power-saving read and program-verify operations |
| 09/28/2006 | WO2006076037A3 Controllable nanomechanical memory element |
| 09/28/2006 | US20060218469 Low power cost-effective ECC memory system and method |
| 09/28/2006 | US20060216887 The memory cell and cell array for embedded system |
| 09/28/2006 | US20060216870 High density SRAM cell with latched vertical transistors |
| 09/28/2006 | US20060216483 Print medium with anisotropic bending properties |
| 09/28/2006 | US20060215481 System and method for re-ordering memory references for access to memory |
| 09/28/2006 | US20060215459 Active and Passive Programming/Erasing Time and Verifiable Reading for Memory System |
| 09/28/2006 | US20060215458 Nonvolatile semiconductor memory |
| 09/28/2006 | US20060215457 Method of generating cell library data for large scale integrated circuits |
| 09/28/2006 | US20060215456 Disk array data protective system and method |
| 09/28/2006 | US20060215455 User configurable commands for flash memory |
| 09/28/2006 | US20060215452 NROM flash memory cell with integrated DRAM |
| 09/28/2006 | US20060215450 Semiconductor memory device |
| 09/28/2006 | US20060215446 Magnetic elements |
| 09/28/2006 | US20060215445 Magneto-resistive memory cells and devices having asymmetrical contacts and methods of fabrication therefor |
| 09/28/2006 | US20060215444 Series diode thermally assisted MRAM |
| 09/28/2006 | US20060215443 Architectures for cpp ring shaped (rs) devices |
| 09/28/2006 | US20060215442 Conduction control device |
| 09/28/2006 | US20060215441 Semiconductor integrated circuit |
| 09/28/2006 | US20060215440 Nonvolatile memory devices having enhanced bit line and/or word line driving capability |
| 09/28/2006 | US20060215439 Temperature compensation of thin film diode voltage threshold in memory sensing circuit |
| 09/28/2006 | US20060215438 Ferroelectric memory |
| 09/28/2006 | US20060215437 Recovering from memory imprints |
| 09/28/2006 | US20060215435 Method for reducing a reset current for resetting a portion of a phase change material in a memory cell of a phase change memory device and the phase change memory device |
| 09/28/2006 | US20060215433 Processor having electronic fuses for storing secret data |
| 09/28/2006 | US20060214992 Inkjet printhead having paddled inkjet nozzles |
| 09/28/2006 | US20060214988 Printhead incorporating leveraged micro-electromechanical actuation |
| 09/28/2006 | US20060214716 Clock signal input/output device for correcting clock signals |
| 09/28/2006 | US20060214208 Method of manufacturing semiconductor device |
| 09/28/2006 | DE10256973B4 Integrierter Halbleiterspeicher mit einem an einem Steg ausgebildeten Auswahltransistor Integrated semiconductor memory with a selection transistor formed on a web |
| 09/28/2006 | DE10242886B4 Interpolationsschaltung, DLL-Schaltung und integrierte Halbleiterschaltung Interpolation circuit, the DLL circuit and semiconductor integrated circuit |
| 09/28/2006 | DE102005013238A1 Transfer of control information for adjusting the parameter of driver in data interface of RAM, involves transferring control information with control bits in appropriate sequence with respect to data bits from controller to RAM |
| 09/28/2006 | DE102005013237A1 Memory e.g. dynamic RAM, operation holding time determining device, has counter reporting end of holding time on counting desired number of pulses, and adjusting unit provided over external connection of memory to adjust number of pulses |
| 09/28/2006 | DE10034699B4 Leseverstärker in einem nichtflüchtigen ferroelektrischen Speicher Sense amplifier in a non-volatile ferroelectric memory |
| 09/28/2006 | DE10012273B4 Anlage zur messtechnischen räumlichen 3D-Lageerfassung von Oberflächenpunkten Plant for metrological spatial 3D position detection of surface points |
| 09/27/2006 | EP1705665A1 Conduction control device |
| 09/27/2006 | EP1704638A2 Tuneable spin torque device for generating an oscillating signal and method for tuning |
| 09/27/2006 | EP1704571A1 Non-volatile memory and method with block management system |
| 09/27/2006 | EP1704483A2 Non-volatile memory and method with memory planes alignment |
| 09/27/2006 | EP1377982B1 Multiple bit prefetch output data path |
| 09/27/2006 | CN1839446A Method and apparatus for partial refreshing of DRAMs |
| 09/27/2006 | CN1839445A A polymer memory having a ferroelectric polymer memory material with cell sizes that are asymmetric |
| 09/27/2006 | CN1838324A Semiconductor storage device having page copying function |
| 09/27/2006 | CN1838321A Nonvolatile memory devices having enhanced bit line and/or word line driving capability |
| 09/27/2006 | CN1838320A Nonvolatile semiconductor memory device |
| 09/27/2006 | CN1838319A Nonvolatile memory device and method for storing status information using multiple strings |
| 09/27/2006 | CN1838318A Semiconductor memory component, system possessing same and method for operating the component |
| 09/27/2006 | CN1838317A Device for defining wait time in storage circuit |
| 09/27/2006 | CN1838316A Circuit for generating data bit com sign |
| 09/27/2006 | CN1838315A Graded temperature compensation refreshing method and circuit thereof |
| 09/27/2006 | CN1838314A Boosted voltage generating circuit and method in semiconductor memory device |
| 09/27/2006 | CN1838313A Method and circuit for sensing output from memory cell |
| 09/27/2006 | CN1838312A word line voltage compensation method for write current in phase change memory array |
| 09/27/2006 | CN1277354C Input and output driver |
| 09/27/2006 | CN1277313C Semiconductor memory device |
| 09/27/2006 | CN1277212C Initializing set system and method for dynamic random access memory |
| 09/26/2006 | US7114031 Structure and method of cache memory data update |
| 09/26/2006 | US7114025 Semiconductor memory having test function for refresh operation |
| 09/26/2006 | US7113446 Latch circuit and synchronous memory including the same |
| 09/26/2006 | US7113442 Non-volatile semiconductor memory, semiconductor device and charge pump circuit |
| 09/26/2006 | US7113441 Semiconductor memory |
| 09/26/2006 | US7113440 Semiconductor memory device saving power during self refresh operation |
| 09/26/2006 | US7113439 Refresh methods for RAM cells featuring high speed access |
| 09/26/2006 | US7113438 Semiconductor memory device and connecting method of sense amplifier |
| 09/26/2006 | US7113437 Sense amplifier systems and a matrix-addressable memory device provided therewith |
| 09/26/2006 | US7113436 Sense amplifying circuit for a semiconductor memory with improved data read ability at a low supply voltage |
| 09/26/2006 | US7113434 Semiconductor integrated circuit having programmable delays for generating timing signals with time difference being non-integral multiple of clock cycle |
| 09/26/2006 | US7113428 Method for operating a memory cell array |
| 09/26/2006 | US7113426 Non-volatile RAM cell and array using nanotube switch position for information state |
| 09/26/2006 | US7113425 Nonvolatile semiconductor memory device with scalable two transistor memory cells |
| 09/26/2006 | US7113424 Energy adjusted write pulses in phase-change memories |
| 09/26/2006 | US7113423 Method of forming a negative differential resistance device |
| 09/26/2006 | US7113422 Method for optimizing MRAM circuit performance |
| 09/26/2006 | US7113421 Semiconductor integrated circuit device |
| 09/26/2006 | US7113420 Molecular memory cell |
| 09/26/2006 | US7113419 Ferroelectric memory device and method of reading a ferroelectric memory |
| 09/26/2006 | US7113417 Integrated memory circuit |
| 09/26/2006 | US7113027 Semiconductor integrated circuit device |
| 09/26/2006 | US7113015 Circuit for setting a signal propagation time for a signal on a signal line and method for ascertaining timing parameters |
| 09/26/2006 | US7113010 Clock distortion detector using a synchronous mirror delay circuit |
| 09/26/2006 | US7112836 Method of forming a chalcogenide memory cell having a horizontal electrode and a memory cell produced by the method |
| 09/26/2006 | US7112815 Multi-layer memory arrays |
| 09/26/2006 | US7112493 Method of making non-volatile field effect devices and arrays of same |
| 09/26/2006 | US7112490 Hot carrier injection programmable structure including discontinuous storage elements and spacer control gates in a trench |
| 09/26/2006 | US7112464 Devices having vertically-disposed nanofabric articles and methods of making the same |