| Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008) |
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| 01/10/2008 | US20080008010 High bandwidth datapath load and test of multi-level memory cells |
| 01/10/2008 | US20080008009 Nonvolatile memory system, semiconductor memory, and writing method |
| 01/10/2008 | US20080008008 Methods for programming and reading nand flash memory device and page buffer performing the same |
| 01/10/2008 | US20080008007 Semiconductor memory device, and read method and read circuit for the same |
| 01/10/2008 | US20080008005 Operation Methods For A Non-Volatile Memory Cell In An Array |
| 01/10/2008 | US20080008003 Non-Volatile memory device |
| 01/10/2008 | US20080008002 Electronic device comprising non volatile memory cells with optimized programming and corresponding programming method |
| 01/10/2008 | US20080007999 Nonvolatile memory device with NAND cell strings |
| 01/10/2008 | US20080007998 Single-poly EEPROM cell and method for formign the same |
| 01/10/2008 | US20080007996 Magnetic storage device |
| 01/10/2008 | US20080007995 Memory cell having a switching active material, and corresponding memory device |
| 01/10/2008 | US20080007994 Synthetic anti-ferromagnetic structure with non-magnetic spacer for MRAM applications |
| 01/10/2008 | US20080007993 Semiconductor memory device |
| 01/10/2008 | US20080007992 Multi-state sense amplifier |
| 01/10/2008 | US20080007991 Reversed Magnetic Tunneling Junction for Power Efficient Byte Writing of Mram |
| 01/10/2008 | US20080007990 Scalable magnetic random access memory device |
| 01/10/2008 | US20080007989 Programming methods to increase window for reverse write 3D cell |
| 01/10/2008 | US20080007988 Non-volatile memory device including variable resistance material and method of fabricating the same |
| 01/10/2008 | US20080007987 Semiconductor integrated circuit device |
| 01/10/2008 | US20080007288 Apparatus and method of error detection and correction in a radiation-hardened static random access memory field-programmable gate array |
| 01/10/2008 | US20080006860 Magnetoresistive effect element and magnetic memory device |
| 01/10/2008 | US20080006851 Non-volatile phase-change memory and manufacturing method thereof |
| 01/10/2008 | DE19724277B4 Interne Quellenspannungserzeugungsschaltung Internal source voltage generating circuit |
| 01/10/2008 | DE102007028287A1 Taktschaltkreis für Halbleiterspeicher Clock circuit for semiconductor memory |
| 01/10/2008 | DE10105285B4 Halbleiterspeicher mit Precharge-Steuerung Semiconductor memory with precharge control |
| 01/09/2008 | EP1876602A1 Method for refreshing a dynamic RAM, and corresponding dynamic RAM device, in particular incorporated in a cellular mobile telephone |
| 01/09/2008 | EP1876601A1 Method for refreshing a dynamic RAM, in particular in standby mode and in active operation mode, and corresponding dynamic RAM device, for example incorporated in a cellular mobile telephone |
| 01/09/2008 | EP1875516A2 A hybrid bulk-soi 6t-sram cell for improved cell stability and performance |
| 01/09/2008 | EP1875475A1 Static ram memory cell with dnr chalcogenide devices and method of forming |
| 01/09/2008 | EP1875353A1 Interface for non-volatile memories |
| 01/09/2008 | EP1665277A4 Write driver for a magnetoresistive memory |
| 01/09/2008 | EP1440447B1 Error management for writable tracking storage units storing reference values |
| 01/09/2008 | CN101103415A Method and system for minimizing impact of refresh operations on volatile memory performance |
| 01/09/2008 | CN101101966A Phase change film material of silicon-adulterated sulfur series for phase change memory |
| 01/09/2008 | CN101101965A Phase change film material of silicon-adulterated sulfur series for phase change memory |
| 01/09/2008 | CN101101964A Non-volatile memory device including a variable resistance material |
| 01/09/2008 | CN101101963A A high status ratio inorganic film dual stabilization part and its making method |
| 01/09/2008 | CN101101962A Gallium-adulterated Ga3Sb8Te1 phase change memory unit and its making method |
| 01/09/2008 | CN101101961A Phase change memory unit with loop phase change material and its making method |
| 01/09/2008 | CN101101960A A resistance memory for reducing reset operation current |
| 01/09/2008 | CN101101957A Method for manufacturing a magneto-resistance effect element and magneto-resistance effect element |
| 01/09/2008 | CN101101919A Phase change random memories including a doped phase change layer, and methods of operating the same |
| 01/09/2008 | CN101101789A 铁电门器件 Rail switches devices |
| 01/09/2008 | CN101101788A Memory device |
| 01/09/2008 | CN101101787A Magnetic memory unit and method for writing data |
| 01/09/2008 | CN100361304C Semiconductor storage, semiconductor device and semiconductor device control method |
| 01/09/2008 | CN100361230C Thin film magnetic memory device with memory cell having magnetic tunnel junction |
| 01/09/2008 | CN100361229C Non-volatile memory device achieving fast data reading by reducing data line charging period |
| 01/09/2008 | CN100361204C Recording medium having data structure for managing reproduction duration of still pictures recorded thereon and recording and reproducing methods and apparatuses |
| 01/08/2008 | US7318183 Data storing method of dynamic RAM and semiconductor memory device |
| 01/08/2008 | US7317658 Semiconductor integrated circuit and IC card |
| 01/08/2008 | US7317656 Semi-conductor memory component, and a process for operating a semi-conductor memory component |
| 01/08/2008 | US7317650 Semiconductor memory |
| 01/08/2008 | US7317648 Memory logic for controlling refresh operations |
| 01/08/2008 | US7317640 Nonvolatile memory with erasable parts |
| 01/08/2008 | US7317638 Efficient verification for coarse/fine programming of non-volatile memory |
| 01/08/2008 | US7317637 Programming method of multilevel memories and corresponding circuit |
| 01/08/2008 | US7317636 Nonvolatile semiconductor memory, a data write-in method for the nonvolatile semiconductor memory and a memory card |
| 01/08/2008 | US7317635 User configurable commands for flash memory |
| 01/08/2008 | US7317634 Nonvolatile semiconductor memory device |
| 01/08/2008 | US7317632 Non-volatile memory storage device and controller therefor |
| 01/08/2008 | US7317631 Method for reading Uniform Channel Program (UCP) flash memory cells |
| 01/08/2008 | US7317350 Transresistance amplifier for a charged particle detector |
| 01/08/2008 | US7317344 Function selection circuit using a fuse option scheme |
| 01/08/2008 | US7317219 Magnetic random access memory (MRAM) and method of manufacturing the same |
| 01/08/2008 | CA2338725C Semiconductor memory card, playback apparatus, recording apparatus, playback method, recording method, and a computer-readable storage medium |
| 01/03/2008 | WO2008002832A2 Method for programming non-volatile memory using variable amplitude programming pulses |
| 01/03/2008 | WO2008002813A2 Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells having enhanced read and write margins |
| 01/03/2008 | WO2007061667A3 Volatile memory elements with elevated power supply levels for programmable logic device integrated circuits |
| 01/03/2008 | US20080005519 Multi-bank memory accesses using posted writes |
| 01/03/2008 | US20080002508 Memory chip architecture having non-rectangular memory banks and method for arranging memory banks |
| 01/03/2008 | US20080002488 Semiconductor device and memory circuit including a redundancy arrangement |
| 01/03/2008 | US20080002486 Method for accessing a memory |
| 01/03/2008 | US20080002477 Method for manufacturing memory cell |
| 01/03/2008 | US20080002476 EEPROM Having Single Gate Structure and Method of Operating the Same |
| 01/03/2008 | US20080002475 Non-volatile memory devices having a vertical channel and methods of manufacturing such devices |
| 01/03/2008 | US20080002474 Eeprom memory having an improved resistance to the breakdown of transistors |
| 01/03/2008 | US20080002472 Controller for fuel cell in standby mode or no load condition |
| 01/03/2008 | US20080002471 Nand flash memory device and methods of its formation and operation |
| 01/03/2008 | US20080002470 NAND nonvolatile semiconductor memory device and method of manufacturing NAND nonvolatile semiconductor memory device |
| 01/03/2008 | US20080002467 Card controller controlling semiconductor memory including memory cell having charge accumulation layer and control gate |
| 01/03/2008 | US20080002466 Buried bitline with reduced resistance |
| 01/03/2008 | US20080002465 Multi-bit-per-cell flash memory device with an extended set of commands |
| 01/03/2008 | US20080002463 Semiconductor device and driving method therefor |
| 01/03/2008 | US20080002461 Two terminal memory array having reference cells |
| 01/03/2008 | US20080002460 Structure and method of making lidded chips |
| 01/03/2008 | US20080002459 Magnetic memory device |
| 01/03/2008 | US20080002458 Nonvolatile variable resistance memory device and method of fabricating the same |
| 01/03/2008 | US20080002457 Resistance change memory device |
| 01/03/2008 | US20080002456 Resistance change memory device |
| 01/03/2008 | US20080002455 Resistance change memory device |
| 01/03/2008 | US20080002454 Semiconductor device and electronic device |
| 01/03/2008 | US20080002452 Method for setting a read voltage, and semiconductor circuit arrangement |
| 01/03/2008 | US20080002448 Semiconductor integrated circuit |
| 01/03/2008 | US20080001136 Electrically Writeable and Erasable Memory Medium |
| 01/03/2008 | DE19963502B4 Schaltungsanordnung für einen integrierten Halbleiterspeicher mit Spaltenzugriff Circuitry for an integrated semiconductor memory with column access |
| 01/03/2008 | DE112005003425T5 Einzelchip mit magnetoresistivem Speicher Single chip magnetoresistive memory |
| 01/03/2008 | DE102007028057A1 Magnetic RAM cell, has reference layer structure placed bi-directional and parallel to axis by magnetic field, which is put on during write operation, so that information in reference layer structure is stored |
| 01/03/2008 | DE102006029704A1 Integrated semiconductor structure manufacture method involves forming cell transistor for each trench capacitor dividing active area in two sections, in which cell transistors are arranged parallel to columns of trench capacitors |
| 01/02/2008 | EP1671328A4 Accelerated life test of mram celles |