Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
01/2008
01/23/2008CN101110266A Multi-level operation in nitride storage memory cell
01/23/2008CN101110265A Random access memory that selectively provides data to amplifiers
01/23/2008CN101110264A Semiconductor device
01/23/2008CN101109056A Aluminum-doping phase transiting storing thin-film material Alx(Ge2Sb2Te5)100-x and method of preparing the same
01/23/2008CN100364106C Information processing structure
01/23/2008CN100364075C Variable electrical risistance device, producing method of variable resistance memory and memory
01/23/2008CN100364065C Strong electrolyte film and its manufacturing method, strong electrolyte capacitor, strong electrolyte memory
01/23/2008CN100364014C Method and device for testing semiconductor memory devices
01/23/2008CN100364012C Worldline decoder and memory device
01/23/2008CN100363917C Method and apparatus for supplementary command bus in a computer system
01/22/2008US7321949 Memory device including self-ID information
01/22/2008US7321516 Biasing structure for accessing semiconductor memory cell storage elements
01/22/2008US7321514 DRAM memory cell arrangement
01/22/2008US7321512 Ramp generator and relative row decoder for flash memory device
01/22/2008US7321510 Read operation for non-volatile storage that includes compensation for coupling
01/22/2008US7321509 Compensating for coupling in non-volatile storage
01/22/2008US7321508 Magnetic memory device and method for production thereof
01/22/2008US7321506 Multivibrator protected against current or voltage spikes
01/22/2008US7321505 Nonvolatile memory utilizing asymmetric characteristics of hot-carrier effect
01/22/2008US7321504 Static random access memory cell
01/22/2008US7321503 Method of driving memory device to implement multiple states
01/22/2008US7321252 Semiconductor integrated circuit
01/22/2008US7321130 Thin film fuse phase change RAM and manufacturing method
01/22/2008US7320895 Thyristor-based device having dual control ports
01/17/2008WO2006081150A9 System and method for performing concatenation of diversely routed channels
01/17/2008WO2006044244A3 Thermomagnetically assisted spin-momentum-transfer switching memory
01/17/2008US20080016434 Semiconductor integrated circuit device
01/17/2008US20080016383 Semiconductor device
01/17/2008US20080016261 Method for controlling time point for data output in synchronous memory device
01/17/2008US20080016259 Central processor for a camera with printing capabilities
01/17/2008US20080014531 Radiation-hardened programmable device
01/17/2008US20080013797 Image Processing Method Using Sensed Eye Position
01/17/2008US20080013382 Current sensing for flash
01/17/2008US20080013381 Sense amplifier with reduced area occupation for semiconductor memories
01/17/2008US20080013380 Shifting Reference Values to Account for Voltage Sag
01/17/2008US20080013379 Method and apparatus for reading data from nonvolatile memory
01/17/2008US20080013376 Memories, memory compiling systems and methods for the same
01/17/2008US20080013373 Methods of operating a non-volatile memory device
01/17/2008US20080013370 Reading phase change memories to reduce read disturbs
01/17/2008US20080013369 Magnetic tunneling junction based logic circuits an methods of operating the same
01/17/2008US20080013368 Semiconductor integrated circuit device
01/17/2008US20080013367 Compact and highly efficient dram cell
01/17/2008US20080013366 Device and method having a memory array storing each bit in multiple memory cells
01/17/2008US20080013365 High efficiency portable archive
01/17/2008US20080013364 Method of making non-volatile memory cell with embedded antifuse
01/17/2008US20080013363 Operation method of nonvolatile memory device induced by pulse voltage
01/17/2008US20080013362 Phase-change memory device and method that maintains the resistance of a phase-change material in a set state within a constant resistance range
01/17/2008US20080013361 Test method for ferroelectric memory
01/17/2008US20080013356 Multi-bank memory
01/17/2008US20080012912 System for aligning a charge tunnel of an ink jet printer
01/17/2008US20080012905 Inkjet printhead integrated circuit with work transmitting structures
01/17/2008US20080012903 Inkjet Nozzle Incorporating Serpentine Actuator
01/17/2008DE19613642B4 Halbleitereinrichtung zum Verkleinern von Wirkungen eines Rauschens auf eine interne Schaltung Semiconductor device to Shrink effects of noise on an internal circuit
01/17/2008DE10344021B4 Nichtflüchtiger Speicherbaustein, Programmiervorrichtung und Programmierverfahren Non-volatile memory device programmer and programming methods
01/17/2008DE102004037164B4 Vorrichtung zur geregelten Verzögerung eines Taktsignals Device for the controlled delay of a clock signal
01/16/2008EP1879196A1 Semiconductor memory with data-address multiplexing on the address bus
01/16/2008EP1668517A4 Selectable block protection for non-volatile memory
01/16/2008EP1476875B1 Mram without isolation devices
01/16/2008EP1459323B1 Multi-mode synchronous memory device and method of operating and testing same
01/16/2008EP1446807B1 Sense amplifier for multilevel non-volatile integrated memory devices
01/16/2008EP1282677B1 Predictive timing calibration for memory devices
01/16/2008CN101107671A Memory sensing circuit and method for low voltage operation
01/16/2008CN101106370A Clock control method and circuit
01/16/2008CN101106177A Phase-change material layers, methods of forming the same, phase-change memory devices having the same, and methods of forming phase-change memory devices
01/16/2008CN101106175A Low power phase change memory cell having different phase change materials
01/16/2008CN101106174A Method for reducing a reset current for resetting a portion of a phase change material in a memory cell of a phase change memory device and the phase change memory device
01/16/2008CN101106173A Method of forming a phase change material layer and a phase change memory device so formed
01/16/2008CN101106172A An erasable and readable inorganic film electrical dual stabilization part and its making method
01/16/2008CN101106171A Non-volatile memory device including variable resistance material
01/16/2008CN101106170A Semiconductor device using magnetic domain wall movement
01/16/2008CN101106152A Thermal isolation of phase change memory cells
01/16/2008CN101106151A Phase change memory with diode unit selective connection and its making method
01/16/2008CN101105973A Operation method for VI element compound storage unit
01/16/2008CN101105972A Semiconductor memory, controller and method for operating semiconductor memory
01/16/2008CN100362742C Delay circuit and delay sysnchronization loop device
01/16/2008CN100362592C Semiconductor memory element and its control method
01/16/2008CN100362591C Method of making magnetic memory device
01/15/2008US7320049 Detection circuit for mixed asynchronous and synchronous memory operation
01/15/2008US7320045 Automatic detection of the bit width of a data bus
01/15/2008US7319629 Method of operating a dynamic random access memory cell
01/15/2008US7319618 Low-k spacer structure for flash memory
01/15/2008US7319616 Negatively biasing deselected memory cells
01/15/2008US7319613 NROM flash memory cell with integrated DRAM
01/15/2008US7319611 Bitline transistor architecture for flash memory
01/15/2008US7319609 Non-volatile memory device with a programming current control scheme
01/15/2008US7319608 Non-volatile content addressable memory using phase-change-material memory elements
01/15/2008US7319607 Ferroelectric memory
01/15/2008US7319606 Memory
01/15/2008US7319605 Conductive structure for microelectronic devices and methods of fabricating such structures
01/15/2008US7319603 Semiconductor memory device layout comprising high impurity well tap areas for supplying well voltages to N wells and P wells
01/15/2008US7319273 Methods and apparatus for a flexible circuit interposer
01/15/2008US7319053 Vertically stacked field programmable nonvolatile memory and method of fabrication
01/10/2008WO2008005057A2 Partitioned random access and read only memory
01/10/2008WO2008004216A2 Multi-bit-per-cell flash memory device with an extended set of commands
01/10/2008WO2007125519A3 Latency optimized resynchronization solution for ddr/ddr2 sdram read path
01/10/2008WO2007122565A3 Static random access memory cell
01/10/2008WO2007122564A3 Memory circuit and method for sensing a memory element
01/10/2008WO2007084751A3 Flash memory with coding and signal processing
01/10/2008US20080008020 Memory device with programmable control for activation of read amplifiers
01/10/2008US20080008018 Low voltage operation dram control circuits