Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
01/2008
01/31/2008US20080024202 High voltage generating circuit preserving charge pumping efficiency
01/31/2008US20080024201 High voltage generating circuit preserving charge pumping efficiency
01/31/2008US20080024200 High voltage generating circuit preserving charge pumping efficiency
01/31/2008US20080023790 Mixed-use memory array
01/31/2008US20080022874 Print Roll With Ink Reservoir And Print Media Roll Sections
01/31/2008DE112006000792T5 Variable Speicherfeld-Selbstauffrischungsraten in Suspend- und Standby-Modi Variable memory array self-refresh rates in suspend and standby modes
01/31/2008DE102007030973A1 Speichervorrichtung und Verfahren zur Betätigung einer Speichervorrichtung, insbesondere eines DRAM Memory device and method of operating a memory device, in particular a DRAM
01/31/2008DE10196673B4 Stromsparende Spannungsversorgungsvorrichtungen für ein Speicherbauelement und Verfahren hierzu Power-saving power supply devices for a memory device and method therefor
01/31/2008DE10053962B4 Nichtflüchtiger ferroelektrischer Speicher und Verfahren zu seiner Herstellung A non-volatile ferroelectric memory and method for its preparation
01/30/2008EP1883076A1 Method of programming cells of a NAND memory device
01/30/2008CN101114695A Memory element and method of manufacturing thereof
01/30/2008CN101114694A Magnetic cell and magnetic memory
01/30/2008CN101114693A Semiconductor device using magnetic domain wall moving
01/30/2008CN101114666A Anti-irradiation high-reliability phase transition memory device unit and manufacturing method thereof
01/30/2008CN101114519A Read disturb sensor for phase change memories
01/30/2008CN101114518A Sram device and operating method
01/30/2008CN101113506A Magnetic powder suitable for low-noise media
01/30/2008CN100365935C Voltage generating circuit, voltage generating device and semiconductor device using the same, and driving method thereof
01/30/2008CN100365843C Spin switch and magnetic storage element using it
01/30/2008CN100365734C MRAM arrangement
01/29/2008US7325157 Magnetic memory devices having selective error encoding capability based on fault probabilities
01/29/2008US7325114 Selectable block protection for non-volatile memory
01/29/2008US7325090 Refreshing data stored in a flash memory
01/29/2008US7324393 Method for compensated sensing in non-volatile memory
01/29/2008US7324390 Low voltage operation dram control circuits
01/29/2008US7324385 Molecular memory
01/29/2008US7324384 Monolithic, combo nonvolatile memory allowing byte, page and block write with no disturb and divided-well in the cell array using a unified cell structure and technology with a new scheme of decoder and layout
01/29/2008US7324382 Current-mode sensing structure used in high-density multiple-port register in logic processing and method for the same
01/29/2008US7324378 Method of driving a program operation in a nonvolatile semiconductor memory device
01/29/2008US7324377 Apparatus and method for programming and erasing virtual ground EEPROM without disturbing adjacent cells
01/29/2008US7324375 Multi-bits storage memory
01/29/2008US7324374 Memory with a core-based virtual ground and dynamic reference sensing scheme
01/29/2008US7324373 Semiconductor device and short circuit detecting method
01/29/2008US7324372 Storage device
01/29/2008US7324371 Method of writing to a phase change memory device
01/29/2008US7324370 System and method for determining the value of a memory element
01/29/2008US7324369 MRAM embedded smart power integrated circuits
01/29/2008US7324368 Integrated circuit memory with write assist
01/29/2008US7324367 Memory cell and method for forming the same
01/29/2008US7324366 Non-volatile memory architecture employing bipolar programmable resistance storage elements
01/29/2008US7324365 Phase change memory fabricated using self-aligned processing
01/29/2008US7324142 Camera control print medium
01/29/2008US7323904 Look-up table
01/29/2008US7323741 Semiconductor nonvolatile memory device
01/29/2008US7323735 Method of manufacturing semiconductor integrated circuit device having capacitor element
01/29/2008US7323732 MRAM array employing spin-filtering element connected by spin-hold element to MRAM cell structure for enhanced magnetoresistance
01/29/2008US7323380 Single transistor vertical memory gain cell
01/29/2008US7322679 Inkjet nozzle arrangement with thermal bend actuator capable of differential thermal expansion
01/24/2008WO2008011440A2 Floating gate memory with compensating for coupling during programming
01/24/2008WO2008010957A2 Method and system for using a pulsed field to assist spin transfer induced switching of magnetic memory elements
01/24/2008WO2007130615A3 A method for reading a multilevel cell in a non-volatile memory device
01/24/2008WO2007053340A3 Magnetic tunnel junction current sensors
01/24/2008US20080020491 Magneticially lined conductors
01/24/2008US20080019756 Computer keyboard with a planar member and endless belt feed mechanism
01/24/2008US20080019205 Semiconductor device
01/24/2008US20080019204 Apparatus and Method for Supplying Power in Semiconductor Device
01/24/2008US20080019200 Integrated circuit chip with improved array stability
01/24/2008US20080019195 Non-volatile semiconductor memory device and semiconductor memory device
01/24/2008US20080019191 Nonvolatile memory and method of driving the same
01/24/2008US20080019189 Method of High-Performance Flash Memory Data Transfer
01/24/2008US20080019188 Nonvolatile Memory and Method for Compensating During Programming for Perturbing Charges of Neighboring Cells
01/24/2008US20080019187 Memory device and method for verifying information stored in memory cells
01/24/2008US20080019186 System that compensates for coupling during programming
01/24/2008US20080019185 Compensating for coupling during programming
01/24/2008US20080019184 Semiconductor memory device
01/24/2008US20080019182 Semiconductor memory device and control method of the same
01/24/2008US20080019180 Selective Program Voltage Ramp Rates in Non-Volatile Memory
01/24/2008US20080019179 Semiconductor memory device using only single-channel transistor to apply voltage to selected word line
01/24/2008US20080019178 Electronic device including a memory array and conductive lines
01/24/2008US20080019177 Data encoding approach for implementing robust non-volatile memories
01/24/2008US20080019176 Nonvolatile semiconductor memory device for writing multivalued data
01/24/2008US20080019175 System that compensates for coupling based on sensing a neighbor using coupling
01/24/2008US20080019174 Method for configuring compensation
01/24/2008US20080019172 Gated Diode Nonvolatile Memory Cell Array
01/24/2008US20080019171 Dual port memory device with reduced coupling effect
01/24/2008US20080019170 Integrated circuit having memory having a step-like programming characteristic
01/24/2008US20080019169 Active Compensation for Operating Point Drift in MRAM Write Operation
01/24/2008US20080019168 Memory structure and data writing method thereof
01/24/2008US20080019167 Controllable ovonic phase-change semiconductor memory device and methods of programming the same
01/24/2008US20080019166 Display substrate and display device having the same
01/24/2008US20080019058 Magneto-resistive effect element and magnetic memory
01/24/2008US20080018708 Nozzle Arrangement With A Pivotal Wall Coupled To A Thermal Expansion Actuator
01/24/2008US20080018373 System and method for open-loop synthesis of output clock signals having a selected phase relative to an input clock signal
01/24/2008US20080017912 Non-volatile memory cell with embedded antifuse
01/24/2008US20080017894 Integrated circuit with memory having a step-like programming characteristic
01/24/2008DE19912967B4 Verzögerungsregelkreisschaltung und Steuerverfahren hierfür Delay locked loop circuit and control method therefor
01/23/2008EP1881541A2 Phase change memory cell having step-like programming characteristic
01/23/2008EP1881540A2 Phase change memory cell having a step-like programming characteristic
01/23/2008EP1881504A2 Programming non-volatile memory
01/23/2008EP1880391A1 Selective application of program inhibit schemes in non-volatile memory
01/23/2008EP1449218B1 Molehole embedded 3-d crossbar architecture used in electrochemical molecular memory device
01/23/2008CN101110468A Phase change memory cell including nanocomposite insulator
01/23/2008CN101110467A Phase change memory cell having step-like programming characteristic
01/23/2008CN101110466A Phase change memory cell having a step-like programming characteristic
01/23/2008CN101110465A Phase change memory cell having a step-like programming characteristic
01/23/2008CN101110464A Heating layer for reducing phase-change memory device unit power consumption and its manufacturing method
01/23/2008CN101110424A Dual port memory device with reduced coupling effect
01/23/2008CN101110420A Method and device for reducing leakage current of integrated circuit
01/23/2008CN101110268A Multiple time programmable (mtp) pmos floating gate-based non-volatile memory device for a general-purpose cmos technology with thick gate oxide
01/23/2008CN101110267A Method and storage switching device for operating a resistance storage cell