Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008) |
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01/31/2008 | US20080024202 High voltage generating circuit preserving charge pumping efficiency |
01/31/2008 | US20080024201 High voltage generating circuit preserving charge pumping efficiency |
01/31/2008 | US20080024200 High voltage generating circuit preserving charge pumping efficiency |
01/31/2008 | US20080023790 Mixed-use memory array |
01/31/2008 | US20080022874 Print Roll With Ink Reservoir And Print Media Roll Sections |
01/31/2008 | DE112006000792T5 Variable Speicherfeld-Selbstauffrischungsraten in Suspend- und Standby-Modi Variable memory array self-refresh rates in suspend and standby modes |
01/31/2008 | DE102007030973A1 Speichervorrichtung und Verfahren zur Betätigung einer Speichervorrichtung, insbesondere eines DRAM Memory device and method of operating a memory device, in particular a DRAM |
01/31/2008 | DE10196673B4 Stromsparende Spannungsversorgungsvorrichtungen für ein Speicherbauelement und Verfahren hierzu Power-saving power supply devices for a memory device and method therefor |
01/31/2008 | DE10053962B4 Nichtflüchtiger ferroelektrischer Speicher und Verfahren zu seiner Herstellung A non-volatile ferroelectric memory and method for its preparation |
01/30/2008 | EP1883076A1 Method of programming cells of a NAND memory device |
01/30/2008 | CN101114695A Memory element and method of manufacturing thereof |
01/30/2008 | CN101114694A Magnetic cell and magnetic memory |
01/30/2008 | CN101114693A Semiconductor device using magnetic domain wall moving |
01/30/2008 | CN101114666A Anti-irradiation high-reliability phase transition memory device unit and manufacturing method thereof |
01/30/2008 | CN101114519A Read disturb sensor for phase change memories |
01/30/2008 | CN101114518A Sram device and operating method |
01/30/2008 | CN101113506A Magnetic powder suitable for low-noise media |
01/30/2008 | CN100365935C Voltage generating circuit, voltage generating device and semiconductor device using the same, and driving method thereof |
01/30/2008 | CN100365843C Spin switch and magnetic storage element using it |
01/30/2008 | CN100365734C MRAM arrangement |
01/29/2008 | US7325157 Magnetic memory devices having selective error encoding capability based on fault probabilities |
01/29/2008 | US7325114 Selectable block protection for non-volatile memory |
01/29/2008 | US7325090 Refreshing data stored in a flash memory |
01/29/2008 | US7324393 Method for compensated sensing in non-volatile memory |
01/29/2008 | US7324390 Low voltage operation dram control circuits |
01/29/2008 | US7324385 Molecular memory |
01/29/2008 | US7324384 Monolithic, combo nonvolatile memory allowing byte, page and block write with no disturb and divided-well in the cell array using a unified cell structure and technology with a new scheme of decoder and layout |
01/29/2008 | US7324382 Current-mode sensing structure used in high-density multiple-port register in logic processing and method for the same |
01/29/2008 | US7324378 Method of driving a program operation in a nonvolatile semiconductor memory device |
01/29/2008 | US7324377 Apparatus and method for programming and erasing virtual ground EEPROM without disturbing adjacent cells |
01/29/2008 | US7324375 Multi-bits storage memory |
01/29/2008 | US7324374 Memory with a core-based virtual ground and dynamic reference sensing scheme |
01/29/2008 | US7324373 Semiconductor device and short circuit detecting method |
01/29/2008 | US7324372 Storage device |
01/29/2008 | US7324371 Method of writing to a phase change memory device |
01/29/2008 | US7324370 System and method for determining the value of a memory element |
01/29/2008 | US7324369 MRAM embedded smart power integrated circuits |
01/29/2008 | US7324368 Integrated circuit memory with write assist |
01/29/2008 | US7324367 Memory cell and method for forming the same |
01/29/2008 | US7324366 Non-volatile memory architecture employing bipolar programmable resistance storage elements |
01/29/2008 | US7324365 Phase change memory fabricated using self-aligned processing |
01/29/2008 | US7324142 Camera control print medium |
01/29/2008 | US7323904 Look-up table |
01/29/2008 | US7323741 Semiconductor nonvolatile memory device |
01/29/2008 | US7323735 Method of manufacturing semiconductor integrated circuit device having capacitor element |
01/29/2008 | US7323732 MRAM array employing spin-filtering element connected by spin-hold element to MRAM cell structure for enhanced magnetoresistance |
01/29/2008 | US7323380 Single transistor vertical memory gain cell |
01/29/2008 | US7322679 Inkjet nozzle arrangement with thermal bend actuator capable of differential thermal expansion |
01/24/2008 | WO2008011440A2 Floating gate memory with compensating for coupling during programming |
01/24/2008 | WO2008010957A2 Method and system for using a pulsed field to assist spin transfer induced switching of magnetic memory elements |
01/24/2008 | WO2007130615A3 A method for reading a multilevel cell in a non-volatile memory device |
01/24/2008 | WO2007053340A3 Magnetic tunnel junction current sensors |
01/24/2008 | US20080020491 Magneticially lined conductors |
01/24/2008 | US20080019756 Computer keyboard with a planar member and endless belt feed mechanism |
01/24/2008 | US20080019205 Semiconductor device |
01/24/2008 | US20080019204 Apparatus and Method for Supplying Power in Semiconductor Device |
01/24/2008 | US20080019200 Integrated circuit chip with improved array stability |
01/24/2008 | US20080019195 Non-volatile semiconductor memory device and semiconductor memory device |
01/24/2008 | US20080019191 Nonvolatile memory and method of driving the same |
01/24/2008 | US20080019189 Method of High-Performance Flash Memory Data Transfer |
01/24/2008 | US20080019188 Nonvolatile Memory and Method for Compensating During Programming for Perturbing Charges of Neighboring Cells |
01/24/2008 | US20080019187 Memory device and method for verifying information stored in memory cells |
01/24/2008 | US20080019186 System that compensates for coupling during programming |
01/24/2008 | US20080019185 Compensating for coupling during programming |
01/24/2008 | US20080019184 Semiconductor memory device |
01/24/2008 | US20080019182 Semiconductor memory device and control method of the same |
01/24/2008 | US20080019180 Selective Program Voltage Ramp Rates in Non-Volatile Memory |
01/24/2008 | US20080019179 Semiconductor memory device using only single-channel transistor to apply voltage to selected word line |
01/24/2008 | US20080019178 Electronic device including a memory array and conductive lines |
01/24/2008 | US20080019177 Data encoding approach for implementing robust non-volatile memories |
01/24/2008 | US20080019176 Nonvolatile semiconductor memory device for writing multivalued data |
01/24/2008 | US20080019175 System that compensates for coupling based on sensing a neighbor using coupling |
01/24/2008 | US20080019174 Method for configuring compensation |
01/24/2008 | US20080019172 Gated Diode Nonvolatile Memory Cell Array |
01/24/2008 | US20080019171 Dual port memory device with reduced coupling effect |
01/24/2008 | US20080019170 Integrated circuit having memory having a step-like programming characteristic |
01/24/2008 | US20080019169 Active Compensation for Operating Point Drift in MRAM Write Operation |
01/24/2008 | US20080019168 Memory structure and data writing method thereof |
01/24/2008 | US20080019167 Controllable ovonic phase-change semiconductor memory device and methods of programming the same |
01/24/2008 | US20080019166 Display substrate and display device having the same |
01/24/2008 | US20080019058 Magneto-resistive effect element and magnetic memory |
01/24/2008 | US20080018708 Nozzle Arrangement With A Pivotal Wall Coupled To A Thermal Expansion Actuator |
01/24/2008 | US20080018373 System and method for open-loop synthesis of output clock signals having a selected phase relative to an input clock signal |
01/24/2008 | US20080017912 Non-volatile memory cell with embedded antifuse |
01/24/2008 | US20080017894 Integrated circuit with memory having a step-like programming characteristic |
01/24/2008 | DE19912967B4 Verzögerungsregelkreisschaltung und Steuerverfahren hierfür Delay locked loop circuit and control method therefor |
01/23/2008 | EP1881541A2 Phase change memory cell having step-like programming characteristic |
01/23/2008 | EP1881540A2 Phase change memory cell having a step-like programming characteristic |
01/23/2008 | EP1881504A2 Programming non-volatile memory |
01/23/2008 | EP1880391A1 Selective application of program inhibit schemes in non-volatile memory |
01/23/2008 | EP1449218B1 Molehole embedded 3-d crossbar architecture used in electrochemical molecular memory device |
01/23/2008 | CN101110468A Phase change memory cell including nanocomposite insulator |
01/23/2008 | CN101110467A Phase change memory cell having step-like programming characteristic |
01/23/2008 | CN101110466A Phase change memory cell having a step-like programming characteristic |
01/23/2008 | CN101110465A Phase change memory cell having a step-like programming characteristic |
01/23/2008 | CN101110464A Heating layer for reducing phase-change memory device unit power consumption and its manufacturing method |
01/23/2008 | CN101110424A Dual port memory device with reduced coupling effect |
01/23/2008 | CN101110420A Method and device for reducing leakage current of integrated circuit |
01/23/2008 | CN101110268A Multiple time programmable (mtp) pmos floating gate-based non-volatile memory device for a general-purpose cmos technology with thick gate oxide |
01/23/2008 | CN101110267A Method and storage switching device for operating a resistance storage cell |