Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
11/2007
11/22/2007WO2007134253A2 Use of alternative value in cell detection
11/22/2007WO2007134247A2 Dynamic cell bit resolution
11/22/2007WO2007134244A2 Use of 8-bit or higher a/d for nand cell value
11/22/2007WO2007133963A2 Nonvolatile memory with convolutional coding for error correction
11/22/2007WO2007116393A3 Method for generating soft bits in flash memories
11/22/2007WO2006001923A3 Bistable nanoparticle- polymer composite for use in memory devices
11/22/2007US20070268775 NAND system with a data write frequency greater than a command-and-address-load frequency
11/22/2007US20070268774 High voltage transfer circuit and row decoder circuit comprising a high voltage transfer circuit
11/22/2007US20070268767 Circuit and method for controlling self-refresh cycle
11/22/2007US20070268766 Semiconductor memory and refresh cycle control method
11/22/2007US20070268753 Methods of operating bandgap engineered memory
11/22/2007US20070268752 Nonvolatile semiconductor memory device
11/22/2007US20070268751 Flash memory device and related high voltage generating circuit
11/22/2007US20070268750 Semiconductor memory device
11/22/2007US20070268749 Method for operating non-volatile memory device
11/22/2007US20070268748 Multi-bit flash memory devices having a single latch structure and related programming methods, systems and memory cards
11/22/2007US20070268747 Static noise-immune SRAM cells
11/22/2007US20070268746 Nonvolatile memory device performing 2-bit operation and method of manufacturing the same
11/22/2007US20070268743 Magnetic memory layers thermal pulse transitions
11/22/2007US20070268742 Memory Architecture and Cell Design Employing Two Access Transistors
11/22/2007US20070268741 Non-volatile memory cell and methods thereof
11/22/2007US20070268740 Ultra low power SRAM cell design
11/22/2007US20070268739 Nanowire memory device and method of manufacturing the same
11/22/2007US20070268738 Methods and apparatus to provide voltage control for SRAM write assist circuits
11/22/2007US20070268737 Nonvolatile memory device
11/22/2007US20070268736 On-chip heater and methods for fabrication thereof and use thereof
11/22/2007US20070268735 Method and apparatus for compensating for variances of a buried resistor in an integrated circuit
11/22/2007DE19581689B4 Einrichtung und Verfahren zum Erhöhen der Burst-Rate von EDO-DRAMs in einem Computersystem Means and method for increasing the rate of burst EDO DRAMs in a computer system
11/22/2007DE112005003305T5 Speicher mit auswählbarer Einzelzellen- oder Doppelzellenkonfiguration und Verfahren zum Betreiben eines Speichers Memory with selectable single cell or double cell configuration and method of operating a memory
11/22/2007DE102007019548A1 Ein Verfahren und eine Vorrichtung zur frühzeitigen Schreibbeendigung bei einem Halbleiterspeicher A method and an apparatus for early termination of writing in a semiconductor memory
11/22/2007DE102007017579A1 Semiconductor memory e.g. dynamic RAM, device, has device sensing current temperature, where memory device can be operated in energy saving mode for pre-defined time, which begins during activation of control signal
11/22/2007DE102007013760A1 Filterung der Bitposition in einem Speicher Filtering the bit position in a memory
11/22/2007DE102006023173A1 Integrierter Halbleiterspeicher mit Takterzeugung Integrated semiconductor memory with clock generation
11/22/2007DE10149584B4 Verzögerungsregelkreis Delay locked loop
11/22/2007DE10042388B4 Nichtflüchtiger ferroelektrischer Speicher Non-volatile ferroelectric memory
11/21/2007EP1858026A1 Semiconductor memory device with reduced current consumption
11/21/2007EP1858025A1 Semiconductor memory operated by internal and external refresh
11/21/2007EP1858024A1 Semiconductor memory and refresh cycle control method
11/21/2007EP1858022A2 Semiconductor memory and operating method of same
11/21/2007CN101076865A Spinning current switchable magnetic memory component and method for manufacturing memory component
11/21/2007CN101075632A Phase change memory cell employing a gebite layer as a phase change material layer, phase change memory device including the same, electronic system including the same and method of fabricating the sa
11/21/2007CN101075631A 半导体器件 Semiconductor devices
11/21/2007CN101075630A Phase change memory device and manufacturing method
11/21/2007CN101075628A 半导体器件 Semiconductor devices
11/21/2007CN101075479A Semiconductor memory device with reduced current consumption
11/21/2007CN101075478A Semiconductor memory and refresh cycle control method
11/21/2007CN101075477A Semiconductor memory operated by internal and external refresh
11/21/2007CN101075476A Semiconductor memory apparatus and method of driving the same
11/21/2007CN101075474A Semiconductor memory and operating method of same
11/21/2007CN100350615C Semiconductor device and method of fabricating the same
11/21/2007CN100350503C Method for reducing coupling effect between nonvolatile memory storage cell
11/21/2007CN100350502C Voltage producer having lowered noise
11/21/2007CN100350501C Low-voltage conrol method and device
11/21/2007CN100350500C Ferroelectric memory device and its programming method
11/21/2007CN100350499C Magnetic RAM
11/21/2007CN100350498C magneto-resistance effect element and magnetic memory
11/21/2007CN100350497C Thin film magnetic memory device suppressing resistance of transistors present in current path
11/21/2007CN100350495C Magneto-resistive device having magnetically soft reference
11/21/2007CN100350457C Magnetoresistive element, magnetic head, magnetic recording apparatus, and magnetic memory
11/21/2007CN100350402C A memory and an adaptive timing system for controlling access to the memory
11/21/2007CN100350393C Semiconductor memory devices
11/20/2007US7298670 Integrated circuit with analog or multilevel storage cells and user-selectable sampling frequency
11/20/2007US7298663 Bit line control for low power in standby
11/20/2007US7298662 Semiconductor device with power down arrangement for reduce power consumption
11/20/2007US7298654 Non-volatile memory device and associated method of erasure
11/20/2007US7298653 Reducing cross die variability in an EEPROM array
11/20/2007US7298652 Non-volatile memory and semiconductor device
11/20/2007US7298651 Architecture for virtual ground memory arrays
11/20/2007US7298649 Nonvolatile memory card
11/20/2007US7298646 Apparatus for configuring programmable logic devices and associated methods
11/20/2007US7298645 Nano tube cell, and semiconductor device having nano tube cell and double bit line sensing structure
11/20/2007US7298644 Magnetoresistance effect device having crystal grain boundary and method of manufacturing the same
11/20/2007US7298643 MRAM element
11/20/2007US7298642 Magnetic resistance memory and method of writing data
11/20/2007US7298641 Configurable storage device
11/20/2007US7298640 1T1R resistive memory array with chained structure
11/20/2007US7298638 Operating an electronic device having a vertical gain cell that includes vertical MOS transistors
11/20/2007US7298637 Multiple match detection circuit and method
11/20/2007US7298594 Electric-field-effect magnetoresistive devices and electronic devices using the magnetoresistive devices
11/20/2007US7298355 Display device
11/20/2007US7298192 Digital DLL device, digital DLL control method, and digital DLL control program
11/20/2007US7298185 Circuit arrangement for production of a reset signal after a supply has fallen and risen again
11/20/2007US7298182 Comparator using differential amplifier with reduced current consumption
11/20/2007US7297996 Semiconductor memory device for storing data in memory cells as complementary information
11/20/2007US7297975 Non-volatile, resistive memory cell based on metal oxide nanoparticles, process for manufacturing the same and memory cell arrangement of the same
11/20/2007US7297602 Conductive metal oxide gate ferroelectric memory transistor
11/20/2007US7297559 Method of fabricating memory and memory
11/20/2007US7296754 IC card module
11/15/2007WO2007131226A2 Multi-valued logic/memory and methods thereof
11/15/2007WO2007130076A1 Method for coupling out of a magnetic device
11/15/2007WO2007128738A1 Semiconductor memory cell and array using punch-through to program and read same
11/15/2007WO2007053341A3 Methods of implementing magnetic tunnel junction current sensors
11/15/2007US20070263471 Circuit and method for reducing power in a memory device during standby modes
11/15/2007US20070263461 Methods and devices for preventing data stored in memory from being read out
11/15/2007US20070263455 Iterative Memory Cell Charging Based on Reference Cell Value
11/15/2007US20070263453 Method and apparatus for generating read and verify operations in non-volatile memories
11/15/2007US20070263452 Method of Programming Flash Memory Device
11/15/2007US20070263451 Method of Verifying Flash Memory Device
11/15/2007US20070263450 Non-Volatile Memory and Method with Shared Processing for an Aggregate of Read/Write Circuits
11/15/2007US20070263449 Method and apparatus for programming flash memory
1 ... 257 258 259 260 261 262 263 264 265 266 267 268 269 270 271 272 273 274 275 276 277 ... 761