Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
10/2010
10/07/2010US20100254210 Multiple-Port SRAM Device
10/07/2010US20100254208 Semiconductor memory device, refresh control method thereof, and test method thereof
10/07/2010US20100254185 Nonvolatile memory apparatus and method of using thin film transistor as nonvolatile memory
10/07/2010US20100254184 Semiconductor memory device
10/07/2010US20100254183 Magnetoresistance effect element and magetic random access memory
10/07/2010US20100254182 Magnetic storage device
10/07/2010US20100254181 Raising Programming Currents of Magnetic Tunnel Junctions Using Word Line Overdrive and High-k Metal Gate
10/07/2010US20100254180 System for bitcell and column testing in sram
10/07/2010US20100254179 DRAM including pseudo negative word line
10/07/2010US20100254178 Storage device and information re-recording method
10/07/2010US20100254177 Programming Non-Volatile Storage Element Using Current From Other Element
10/07/2010US20100254176 Multi-Bit Resistance-Switching Memory Cell
10/07/2010US20100254175 Cross point non-volatile memory cell
10/07/2010US20100254174 Resistive Sense Memory with Complementary Programmable Recording Layers
10/07/2010US20100253791 Camera sensing device for capturing and manipulating images
10/07/2010DE19950767B4 Stromsteuerschaltkreis und diesen enthaltendes Halbleiterspeicherbauelement Current control circuit, and this semiconductor memory device containing
10/07/2010DE102008019860B4 Vorrichtung, Verfahren und Verwendung des Verfahrens zur Erzeugung von schaltbarem temporärem Magnetismus in oxidischen Materialien mittels elektrischer Felder The device, method and use of the method for producing switchable temporary magnetism in oxidic materials by means of electrical fields
10/06/2010EP2237281A1 Semiconductor memory device, and method of controlling the same
10/06/2010EP2237280A2 Method for mitigating imprint in a ferroelectric memory
10/06/2010EP1947593B1 Portable auxiliary storage device
10/06/2010CN1949392B Systems and methods for programming a memory device
10/06/2010CN1945735B Semiconductor memory device and electronic apparatus
10/06/2010CN1879177B NROM flash memory transistor and its manufacture method, NROM flash array, electronic system
10/06/2010CN1856839B Nonvolatile semiconductor memory device which uses some memory blocks in multilevel memory as binary memory blocks
10/06/2010CN1855293B Semiconductor memory device
10/06/2010CN1830036B Integrated charge sensing scheme for resistive memories
10/06/2010CN1754230B Method for operating non-volatile semiconductor memory
10/06/2010CN1742342B Source-biased memory cell array
10/06/2010CN1734666B Circuit for controlling voltage level, bias detection circuit and compensation method
10/06/2010CN1649026B Semiconductor memory device
10/06/2010CN101853920A Method for preparing double-exchange biasing field type spin valve
10/06/2010CN101853919A Perpendicular magnetic spin valve with nano soft magnetic core
10/06/2010CN101853918A Single-electron magnetic resistance structure and application thereof
10/06/2010CN101853874A Crossed nano-scale storage structure circuit and solution of crosstalk problem thereof
10/06/2010CN101853698A Semiconductor memory device
10/06/2010CN101853697A Gain cell embedded dynamic random access memory (eDRAM) unit, memory and preparation method thereof
10/06/2010CN101853696A Method for mitigating imprint in a ferroelectric memory
10/06/2010CN101853695A System and method for delay locked loop relock mode
10/06/2010CN101188235B Layered integrated circuit memory
10/05/2010US7809088 Multiphase receiver with equalization
10/05/2010US7808856 Method to reduce leakage of a SRAM-array
10/05/2010US7808838 Nonvolatile memory devices and methods of controlling the wordline voltage of the same
10/05/2010US7808837 Non-volatile memory control device
10/05/2010US7808835 Non-volatile semiconductor storage device
10/05/2010US7808828 Non volatile memory
10/05/2010US7808827 Controlled bit line discharge for channel erases in nonvolatile memory
10/05/2010US7808824 Interleaved memory program and verify method, device and system
10/05/2010US7808822 Non-volatile memory device with both single and multiple level cells
10/05/2010US7808820 Parallel programming of multiple-bit-per-cell memory cells by controlling program pulsewidth and programming voltage
10/05/2010US7808817 Nonvolatile memory device using resistive elements and an associated driving method
10/05/2010US7808816 Semiconductor memory device and method for fabricating semiconductor memory device
10/05/2010US7808815 Variable resistance memory device and method of manufacturing the same
10/05/2010US7808814 Magnetization state control device and magnetic information recording device
10/05/2010US7808813 Magnetic memory cell reading apparatus
10/05/2010US7808812 Robust 8T SRAM cell
10/05/2010US7808811 Resistance semiconductor memory device having three-dimensional stack and word line decoding method thereof
10/05/2010US7808810 Multilevel nonvolatile memory cell comprising a resistivity-switching oxide or nitride and an antifuse
10/05/2010US7808610 Image sensing and printing device
10/05/2010US7808042 Systems and devices including multi-gate transistors and methods of using, making, and operating the same
10/05/2010US7807533 Method for forming non-volatile memory with shield plate for limiting cross coupling between floating gates
10/05/2010CA2310295C Multiple match detection circuit and method
09/2010
09/30/2010WO2010110297A1 Magnetic sensor and magnetic-storage device
09/30/2010WO2010109803A1 Resistance-change non-volatile memory device
09/30/2010WO2010109316A1 Optical memory device based on dhlfc material and method of preparing the same
09/30/2010US20100250971 Printer consumable comprising integrated circuit protected from power supply attacks
09/30/2010US20100250819 Hierarchical memory architecture using a concentrator device
09/30/2010US20100246280 Semiconductor device having reset command
09/30/2010US20100246254 Magnetic memory with a thermally assisted writing procedure
09/30/2010US20100246253 Magnetic memory device, and manufacturing method thereof
09/30/2010US20100246252 Nonvolatile solid state magnetic memory and recording method thereof
09/30/2010US20100246251 Predictive Thermal Preconditioning and Timing Control for Non-Volatile Memory Cells
09/30/2010US20100246250 Pipeline Sensing Using Voltage Storage Elements to Read Non-Volatile Memory Cells
09/30/2010US20100246249 Charge carrier stream generating electronic device and method
09/30/2010US20100246248 Memory cell array biasing method and a semiconductor memory device
09/30/2010US20100246247 Phase-change random access memories, memory devices, memory systems, methods of operating and methods of manufacturing the same
09/30/2010US20100246246 Memory device, memory system having the same, and programming method of a memory cell
09/30/2010US20100246245 Spin-torque memory with unidirectional write scheme
09/30/2010US20100246244 Magnetoresistive effect memory
09/30/2010US20100246243 Semiconductor storage device
09/30/2010US20100246242 Soft Error Robust Storage SRAM Cells and Flip-Flops
09/30/2010US20100246241 Semiconductor device with source lines extending in a different direction
09/30/2010US20100246240 Semiconductor device configuration method
09/30/2010US20100246239 Memory device using a variable resistive element
09/30/2010US20100246238 Method for mitigating imprint in a ferroelectric memory
09/30/2010US20100244122 Memory utilizing oxide nanolaminates
09/30/2010US20100244117 Nrom memory cell, memory array, related devices and methods
09/30/2010DE19724222B4 Dram Dram
09/30/2010DE102006060257B4 Widerstandsbasierter Speicher mit direktem Zugriff Resistance-based random access memory
09/30/2010DE10050702B4 Speichermodulsystem Memory module system
09/29/2010EP2234114A1 Register read for volatile memory
09/29/2010EP2232499A1 Large capacity one-time programmable memory cell using metal oxides
09/29/2010EP2232497A1 Method for modeling a magnetic tunnel junction with spin-polarized current writing
09/29/2010EP2232496A1 Magnetic tunnel junction device with separate read and write paths
09/29/2010EP2232495A1 Magnetic memory with a thermally assisted writing procedure
09/29/2010EP2232494A1 System and method of selectively applying negative voltage to wordlines during memory device read operation
09/29/2010EP2232493A1 Method and apparatus for calibrating write timing in a memory system
09/29/2010CN1941180B 半导体存储装置及其驱动方法 Semiconductor memory device and driving method
09/29/2010CN1822224B Memory device capable of refreshing data using buffer and refresh method thereof
09/29/2010CN1755963B Magnetoresistance effect device and method of production of the same
09/29/2010CN1523608B 半导体存储器件 The semiconductor memory device
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