Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
10/2012
10/24/2012CN102747419A Production apparatus and production method for polycrystalline silicon wafer
10/24/2012CN102747418A High-temperature large area silicon carbide epitaxial growth device and treatment method
10/24/2012CN102747417A Method for ingotting monocrystalline silicon
10/24/2012CN102747416A Method of oriented induced growth of REBCO superconductive block from multiple seed crystals in asymmetric(110)/(110) manner
10/24/2012CN102747414A Production method for ingot casting monocrystalline silicon
10/24/2012CN102747413A Quartz crucible for ingot casting
10/24/2012CN102747404A Composite film with photocatalytic function and preparation method thereof
10/24/2012CN102744417A Method for preparing nano-silver wire with high length-diameter ratio
10/24/2012CN102744416A Preparation method of icosahedron crystalline nano nickel-cobalt alloy
10/24/2012CN102226847B Microstructure fiber with fiber core modified by inverse opal and preparation method thereof
10/24/2012CN102220641B Synthesis method of monoclinic crystal phase rare-earth iso-oxy-sulfur superfine nanowire and wire-based superstructure
10/24/2012CN102163650B Growth reactor for spherical semiconductor photovoltaic device
10/24/2012CN102161564B Double-wall quartz crucible for growth of gallium arsenide crystals and preparation method thereof
10/24/2012CN102154682B Preparation method of calcium borate whisker
10/24/2012CN102115914B Mn50CoxNiySnz high-temperature ferromagnetic shape memory alloy material and preparation methods thereof
10/24/2012CN102094236B Czochralski method for growing long-lifetime P-type boron-doped silicon single crystal
10/24/2012CN102071468B Independent polymer nanotube, and preparation method and application thereof
10/24/2012CN101928003B Solar polycrystalline silicon bell-type DS purifying furnace
10/24/2012CN101602506B Production method and production equipment for high-purity polysilicon
10/23/2012US8294267 Elongated structure element with second material on its end portions that differs from the first material in electrical conductivity, chemical reactivity, composition
10/23/2012CA2502669C Stabilized semiconductor nanocrystals
10/18/2012WO2012142463A2 Silicon ingot having uniform multiple dopants and method and apparatus for producing same
10/18/2012WO2012141317A1 Method for manufacturing group iii nitride crystal and group iii nitride crystal
10/18/2012WO2012140971A1 Perovskite-type manganese oxide thin film
10/18/2012WO2012140816A1 Quartz glass crucible, method for producing same, and method for producing silicon single crystal
10/18/2012WO2012140675A1 Stable oxide encapsulated metal clusters and nano particles
10/18/2012WO2012139362A1 Polysilicon ingot casting furnace and polysilicon ingot casting method
10/18/2012WO2012099796A3 Reactor system and method of polycrystalline silicon production therewith
10/17/2012EP2511402A1 Silica vessel and process for production thereof
10/17/2012EP2510138A2 Germanium ingots/wafers having low micro-pit density (mpd) as well as systems and methods for manufacturing same
10/17/2012EP2510137A1 High throughput recrystallization of semiconducting materials
10/17/2012CN202492616U Polycrystal ingot silicon solid-liquid two-phase real-time image detecting device
10/17/2012CN202492615U Ingot furnace with low energy consumption thermal field structure
10/17/2012CN202492614U Compound side protective plate for crucible
10/17/2012CN202492613U Czochralski growing method for sapphire single crystals
10/17/2012CN202492612U Reflection ring lifting device for improving thermal field of zone-melting single crystal furnace
10/17/2012CN202492611U Holding device for single crystals for zone melting furnace
10/17/2012CN202492574U Support and support assembly for growing of graphene and graphene film growing assembly
10/17/2012CN102741977A 硅晶片和半导体装置 A silicon wafer and a semiconductor device
10/17/2012CN102741973A Silicon carbide substrate
10/17/2012CN102741461A Method and device for obtaining a multicrystalline semiconductor material, in particular silicon
10/17/2012CN102741446A Method for coating a substrate with aluminum-doped zinc oxide
10/17/2012CN102732971A Heating device for crystal growing furnace and corundum single crystal growing furnace
10/17/2012CN102732966A Method for preparing two-dimensional atomic crystal new material by supercritical fluid
10/17/2012CN102732965A Lithium niobate substrate and manufacturing method thereof
10/17/2012CN102732964A Preparation method of millimeter-scale tubular R'xR1-xAl3(BO3)4 crystals
10/17/2012CN102732963A Preparation method of monocrystalline metal nanowire array based on alumina template
10/17/2012CN102732962A Method for casting efficient large-crystal-grain silicon ingots
10/17/2012CN102732961A Cooling method and cooling apparatus of polysilicon ingot furnace
10/17/2012CN102732960A Method and system for testing crystalline silicon growth rate
10/17/2012CN102732959A Polysilicon ingot furnace and polysilicon ingot casting method
10/17/2012CN102732956A MO source supply system for GaN epitaxy of MOCVD equipment
10/17/2012CN102732954A Monocrystalline high-K gate dielectric material and its preparation method
10/17/2012CN102732953A Technology and apparatus for growing single silicon carbide crystals through double seed crystal-assisted vapor transport method
10/17/2012CN102732951A Method for solidifying gallium-rich gallium arsenide melt used for liquid phase epitaxy
10/17/2012CN102732949A Draft tube structure of graphite thermal field
10/17/2012CN102732948A Method for improving ingot-casting monocrystaline silicon yield
10/17/2012CN102732946A Preparation method of F and Er ion double-doped green luminescent lead tungstate crystal
10/17/2012CN102732945A Loading method for monocrystaline silicon ingot casting
10/17/2012CN102732944A Crystal growth technology and crystal growth furnace
10/17/2012CN102732943A Method for producing monocrystalline silicon cast ingot
10/17/2012CN102732928A Preparation method of cuprous oxide semiconductor film material
10/17/2012CN102732902A Preparation method of conductive metal oxide nanorod
10/17/2012CN102732762A Magnetic shape memory alloy material with great exchange bias effect and preparation method thereof
10/17/2012CN102732750A Nickel base single crystal superalloy with low cost and low density
10/17/2012CN102728582A Washing method for graphite piece for growing mono-crystalline silicon by using Czochralski method
10/17/2012CN102206822B Silicon core corrosion process
10/17/2012CN102140691B Method for synthesizing vanadium acid zinc micro/nanowire material by adopting hydrothermal method
10/17/2012CN102071466B Method for preparing lead molybdate polycrystalline material
10/17/2012CN102071455B Water cooling device for directional solidification of polycrystalline silicon
10/17/2012CN101962810B Single crystal LiGa3Te5 as well as preparation method and application thereof
10/17/2012CN101919076B Group III nitride semiconductor device, epitaxial substrate, and method for manufacturing group iii nitride semiconductor device
10/17/2012CN101558187B Method for producing group iii nitride-based compound semiconductor crystal
10/17/2012CN101180420B Method for growth of GaN single crystal, method for preparation of GaN substrate, process for producing GaN-based element, and GaN-based element
10/16/2012US8287642 Devices and methods for providing stimulated raman lasing
10/16/2012CA2555634C Controlled nucleation of solutes in solutions having net charge to promote crystal growth
10/11/2012WO2012137949A1 Method for producing nitride semiconductor, nitride semiconductor, and method for forming group iii-v nitride film
10/11/2012WO2012137822A1 Crystal holding mechanism of single crystal pulling device and method for producing single crystal ingot
10/11/2012WO2012137783A1 Semiconductor laminate and process for production thereof, and semiconductor element
10/11/2012WO2012136990A1 Apparatus and method for crystal growth
10/11/2012WO2012136933A1 Process for obtaining a charge of hexanitrohexaazaisowurtzitane crystals having a rounded morphology; charge and corresponding energetic material
10/11/2012US20120258308 Single-crystal apatite nanowires sheathed in graphitic shells and synthesis method thereof
10/11/2012US20120258286 Template for Epitaxial Growth and Process for Producing Same
10/11/2012DE112009003667T5 Verbessertes axial-gradient-transport- (agt-) züchtungsverfahren und -apparat unter anwendung von resistivem erhitzen Breeding methods improved axial-gradient-conveyance (AGT) and -apparat under application of a resistive heating
10/11/2012CA2832515A1 Process for obtaining a charge of hexanitrohexaazaisowurtzitane crystals having a rounded morphology; charge and corresponding energetic material
10/10/2012EP2508656A1 Process for producing single-crystal aluminum nitride
10/10/2012EP2508655A1 Method of producing silicon carbide monocrystals
10/10/2012EP2508654A1 Vapor deposition system
10/10/2012EP2508653A1 Method for producing monocrystal
10/10/2012EP2508471A2 Single-crystal apatite nanowires sheathed in graphitic shells and synthesis method thereof
10/10/2012EP2507418A1 Method of exocasting an article of semiconducting material
10/10/2012EP2507417A1 Device for monitoring the progress of crystallization of a bath of molten material in a directional solidification process employing ultrasound
10/10/2012EP2507416A1 Ultrasonic waveguide device suitable for use in a directional solidification furnace for silicon
10/10/2012CN202482490U Secondary feeding device for polycrystalline ingot furnace
10/10/2012CN202482489U Secondary feeding device for polycrystalline silicon cast ingots
10/10/2012CN202482488U Heat-preservation cover for growing crystal
10/10/2012CN202482487U Crystal multi-die growth device through adopting EFG (edge-defined, film-fed growth) method
10/10/2012CN202482484U Crystal growth furnace
10/10/2012CN102722191A Ingot furnace cooling water temperature controller
10/10/2012CN102719898A Assembled high-temperature resistant crucible
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