Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
11/2012
11/08/2012US20120282443 Single-crystal substrate, group-iii nitride crystal obtained using the same, and process for producing group-iii nitride crystal
11/08/2012DE102011075093A1 Producing silicon ingot, useful in producing silicon wafers, comprises e.g. providing crucible for receiving silicon melt, comprising bottom wall, side wall and longitudinal axis, presetting crystallites, and directionally solidifying
11/07/2012EP2520691A1 Tantalum carbide-coated carbon material and manufacturing method for same
11/07/2012CN202519365U Crucible lifter for growth of sapphire single crystal
11/07/2012CN202519364U Internal insulation cylinder of single crystal furnace
11/07/2012CN202519362U Sapphire crystal bubble observation sorting device
11/07/2012CN202519361U Device special for observing sapphire crystal bubbles to sort sapphire crystal free from look-up and in full visual angle
11/07/2012CN202519359U Gas guiding device for silicon ingot furnace
11/07/2012CN102770940A Single crystal substrate with multilayer film, production method for single crystal substrate with multilayer film, and device production method
11/07/2012CN102770588A CVD single crystal diamond material
11/07/2012CN102770582A Tantalum carbide-coated carbon material and manufacturing method for same
11/07/2012CN102769081A Structure using graphite alkene as buffer layer epitaxy GaN (gallium nitride) and preparation method of structure
11/07/2012CN102766907A Multifunctional thulium-doped beta' phase gadolinium molybdate laser crystal, its preparation method and application thereof
11/07/2012CN102766906A Erbium ion activated 3-micron wave-band gallate laser crystal and its preparation method
11/07/2012CN102766905A Erbium ion activated 1.55-micron wave-band gallate laser crystal and its preparation method
11/07/2012CN102766904A Silica ceramic crucible
11/07/2012CN102766900A Method for preparing cadmium sulfide film by using chemical bath deposition method
11/07/2012CN102765663A Crucible lifting frame for Al2O3 single crystal growth furnace
11/07/2012CN102312278B Method for preparing mullite whisker by use of gangue
11/07/2012CN102220633B Production technology of semiconductor grade silicon single crystal
11/07/2012CN102168302B Double-quartz-crucible device and method for producing czochralski silicon single crystal
11/07/2012CN102154705B Preparation method of indium antimonide nanocrystal
11/07/2012CN102154697B Preparation method of TiO2 crystal whiskers and method for adsorbing metal ions by using TiO2 crystal whiskers
11/07/2012CN102080263B Method for preparing Ag2X film
11/07/2012CN102071461B Method for preparing titanium dioxide nanometer tubes and titanium dioxide nanometer tube preparation for loading enrofloxacin animal remedy
11/07/2012CN101880912B Aluminum hydroxide/magnesium-based hydrotalcite multiphase-based material and preparation method for crystal whiskers thereof
11/07/2012CN101871123B Method and device for growing cadmium zinc telluride crystals in mobile tellurium solvent melting zone
11/07/2012CN101864593B N-doped crystalline silicon and preparation method thereof
11/07/2012CN101495675B Chemical vapor deposition reactor having multiple inlets
11/07/2012CN101250752B Group iii nitride semiconductor substrate
11/01/2012WO2012148611A1 Vessels for molten semiconducting materials and methods of making the same
11/01/2012WO2012147472A1 Compound semiconductor single crystal substrate and method for manufacturing same
11/01/2012WO2012147231A1 Method for coating quartz crucible for growing silicon crystal, and quartz crucible for growing silicon crystal
11/01/2012WO2012146396A1 Method for solid phase crystallization of an amorphous or polycrystalline layer
11/01/2012WO2012120497A4 Method for surfactant crystal growth of a metal-nonmetal compound
11/01/2012US20120275984 Method for manufacturing silicon carbide single crystal, and silicon carbide substrate
10/2012
10/31/2012EP2518757A1 Silicon carbide substrate
10/31/2012EP2518191A1 Template for epitaxial growth and process for producing same
10/31/2012EP2516701A1 Synthetic cvd diamond
10/31/2012EP2516700A1 Single crystal diamond material
10/31/2012EP2516692A1 Method for coating a substrate with aluminum-doped zinc oxide
10/31/2012EP2516328A1 Nanoparticles having reduced ligand spheres
10/31/2012DE112010004657T5 Einkristall-Herstellungsvorrichtung und ein Einkristall-Herstellungsverfahren Single-crystal manufacturing apparatus and a crystal manufacturing method
10/31/2012CN202509157U Ingaas film
10/31/2012CN202509156U Double-window device of sapphire growing furnace
10/31/2012CN202509155U Device for improving crystal bar yield of single crystal furnace
10/31/2012CN102762781A Silica glass crucible and method for manufacturing same
10/31/2012CN102762780A Method of producing silicon carbide single crystal
10/31/2012CN102762761A Devices and method for precipitating a layer on a substrate
10/31/2012CN102762324A Methods for controlling metal nanostructures morphology
10/31/2012CN102760690A Manufacture method and wafer of semiconductor device
10/31/2012CN102759695A Method and device for judging quality of silicon briquettes
10/31/2012CN102758258A Stretching type heat shield for single crystal furnace
10/31/2012CN102758255A Method for growing large-size high-temperature oxide crystal through for top-seeded temperature gradient technique
10/31/2012CN102758254A Heating system for single crystal furnace
10/31/2012CN102758253A Czochralski polycrystalline silicon or monocrystal silicon preparation technology
10/31/2012CN102758252A Polysilicon ingot casting method
10/31/2012CN102758251A Method for controlling sapphire seeding form of Kyropoulos method
10/31/2012CN102758249A Method for preparing colorless corundum monocrystal
10/31/2012CN102758248A Isothermal type heating system for single crystal furnace
10/31/2012CN102758247A Silica glass crucible and method of pulling silicon single crystal with silica glass crucible
10/31/2012CN102758246A Heat shielding device for single crystal furnace
10/31/2012CN102758244A Compound heating-type Czochralski polycrystalline silicon or monocrystal silicon preparation technology
10/31/2012CN102758242A Charging method in monocrystalline silicon ingot casting, and monocrystalline silicon ingot casting method
10/31/2012CN102071463B Rare earth-doped germanium-gallate RExLn1-xGaGe2O7 luminescent material and melt crystal growth method thereof
10/31/2012CN102071460B Method for preparing europium-doped lanthanum phosphate porous nanorods on basis of herring sperm DNA template
10/31/2012CN102051678B Magnesium alloy preparation device capable of controlling grain orientation
10/31/2012CN101643934B Bi-doped halide laser crystal and preparation method thereof
10/31/2012CN101469444B Apparatus for producing single crystal silicon
10/31/2012CN101311374B Yttrium-iron-garnet film structure and preparation method
10/26/2012WO2012145250A2 Side feed system for czochralski growth of silicon ingots
10/26/2012WO2012144872A2 Apparatus and method for fabricating ingot
10/26/2012WO2012144851A2 Apparatus for fabricating ingot
10/26/2012WO2012144614A1 Epitaxial silicon carbide single-crystal substrate and process for producing same
10/26/2012WO2012143867A1 An arrangement for manufacturing crystalline silicon ingots
10/26/2012WO2012143385A1 An arrangement for manufacturing crystalline silicon ingots
10/26/2012WO2012143262A1 Device and method for large-scale deposition of semi-conductor layers with gas-separated hcl-feeding
10/26/2012WO2012143257A1 Device and method for depositing semi-conductor layers while adding hcl for surpressing parasitic growth
10/26/2012WO2012059073A9 Cuprates with nodal kink supporting boson depletion at fermi surface and antinodal kink without boson depletion
10/25/2012US20120267606 Group iii nitride crystal substrate, epilayer-containing group iii nitride crystal substrate, semiconductor device and method of manufacturing the same
10/25/2012DE112010002935T5 Epitaktischer Siliciumwafer und Verfahren zur Herstellung desselben Epitaxial silicon wafer and method for manufacturing the same
10/25/2012DE112010002432T5 Verfahren zum Züchten eines Einkristalls eines Gruppe-III Metallnitrids und Reaktionskessel zur Verwendung dabei This method of growing a single crystal of a group III metal nitride and reaction vessel for use
10/25/2012DE102011007708A1 Tiegelanordnung Crucible assembly
10/25/2012DE10102315B4 Verfahren zum Herstellen von Halbleiterbauelementen und Zwischenprodukt bei diesen Verfahren A method of manufacturing semiconductor devices and an intermediate in this process
10/24/2012EP2514858A1 Group iii nitride crystal substrate, group iii nitride crystal substrate having epitaxial layer, and semiconductor device and method for producing the same
10/24/2012EP2514857A1 SiC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SAME
10/24/2012CN202499933U Novel silicon single crystal rod
10/24/2012CN202499932U Sapphire crystal growing furnace
10/24/2012CN202499930U Heater for making silicon single crystal using Czochralski method
10/24/2012CN202499928U Blanking device of flame melt single crystal furnace
10/24/2012CN102754224A Method for treating a silicon substrate of the production of photovoltaic cells, and photovoltaic cell production method
10/24/2012CN102753737A Internal reforming substrate for epitaxial growth, internal reforming substrate with multilayer film, semiconductor device, bulk semiconductor substrate, and production methods therefor
10/24/2012CN102753736A Device for obtaining a multicrystalline semiconductor material, in particular silicon, and method for controlling the temperature therein
10/24/2012CN102751383A Method for preparing epitaxial silicon thin film for silicon-based heterojunction solar battery
10/24/2012CN102747425A Horizontal type silicon carbide high-temperature oxidation device
10/24/2012CN102747424A Method for preparing zinc oxide nano wire/pipe arrays with controllable diameters and heights on indium tin oxide (ITO) glass
10/24/2012CN102747423A Cr<3+>:KMgSc(WO4)3 doped tunable laser crystal and method for preparing same
10/24/2012CN102747422A Nonlinear optical crystal yttrium-lanthanum-calcium vanadate and preparation method thereof
10/24/2012CN102747421A Keggin type polyoxometallate-based self-defocusing nonlinear optical material under 200 psec laser pulse and synthesis method thereof
10/24/2012CN102747420A Heat exchange table for polycrystalline ingot furnace and ventilation pipe diameter variation method of heat exchange table
1 ... 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 ... 272