| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 06/16/1992 | US5121705 Loading lock for chemical vapor deposition apparatus |
| 06/16/1992 | US5121531 Refractory susceptors for epitaxial deposition apparatus |
| 06/09/1992 | US5120676 Use of phosphine and arsine compounds in chemical vapor deposition and chemical doping |
| 06/09/1992 | US5120394 Epitaxial growth process and growing apparatus |
| 06/09/1992 | US5119761 Substrate heating apparatus for forming thin films on substrate surface |
| 06/09/1992 | US5119540 Susceptor |
| 06/08/1992 | CA2050649A1 Devices based on si/ge |
| 06/03/1992 | EP0487897A1 CVD diamond by alternating chemical reactions |
| 06/02/1992 | US5118642 Reacting organometallic compound in vapor phase |
| 06/02/1992 | US5118365 Ii-iv group compound crystal article and process for producing same |
| 06/02/1992 | US5118286 Closed loop method and apparatus for preventing exhausted reactant gas from mixing with ambient air and enhancing repeatability of reaction gas results on wafers |
| 05/27/1992 | CA2049673A1 Cvd diamond by alternating chemical reactions |
| 05/26/1992 | US5116785 Decomposing fluorinated organometallic complex of beryllium, calcium, strontium, barium or lanthanide in vicinity of semiconductor substrate |
| 05/26/1992 | US5116181 Robotically loaded epitaxial deposition apparatus |
| 05/26/1992 | CA1301958C Method and apparatus for venting vacuum processing equipment |
| 05/26/1992 | CA1301896C Photoelectric conversion device |
| 05/20/1992 | EP0486066A1 Method for forming crystal article |
| 05/20/1992 | EP0486019A1 Method for forming single crystal layer |
| 05/20/1992 | EP0485454A1 Process for making cages for the vapour-deposition of thin films |
| 05/19/1992 | US5114745 Method of producing a thin carbide layer on a carbon substrate, growing a diamond or diamond-like film on the carbide layer, and removing the carbon substrate |
| 05/19/1992 | US5114695 Process of producing aluminum and titanium nitrides |
| 05/19/1992 | CA1301035C Method of epitaxially growing compound semiconductor materials |
| 05/14/1992 | WO1992007664A1 Method of treating and depositing diamonds |
| 05/13/1992 | EP0485301A1 Deposition apparatus for growing a material with reduced hazard |
| 05/13/1992 | EP0485141A2 Composite superconductor |
| 05/13/1992 | EP0484922A1 III-V compound semiconductor device, printer and display device utilizing the same, and method for producing said semiconductor device |
| 05/13/1992 | EP0484879A2 Method and apparatus for gas phase synthesis |
| 05/12/1992 | US5112773 Nodules, heterogeneous |
| 05/12/1992 | US5112699 Metal-metal epitaxy on substrates and method of making |
| 05/12/1992 | US5112643 Gaseous phase synthesized diamond and method for synthesizing same |
| 05/12/1992 | US5112432 Organometallic compounds |
| 05/05/1992 | US5110579 Vapor deposition from mixture of methane and hydrogen |
| 05/05/1992 | US5110577 Harder than diamond |
| 05/05/1992 | US5110437 Plasma processing apparatus |
| 05/05/1992 | US5110405 Method of manufacturing single-crystal diamond particles |
| 04/30/1992 | CA2050456A1 Fabrication of polycrystalline free-standing diamond films |
| 04/29/1992 | EP0482648A1 Method of vapor-growing semiconductor crystal and apparatus for vapor-growing the same |
| 04/29/1992 | CN1016449B Process for formation of functional deposited film containing groups ii and vi atoms as main constituent atoms by microwave plasma chemicul vapor deposition process |
| 04/28/1992 | US5109264 Semiconductor wafers having a shape suitable for thermal treatment |
| 04/28/1992 | US5108792 Used for chemical vapor deposition thermal annealing require high temperature treatment |
| 04/28/1992 | US5108779 Diamond crystal growth process |
| 04/28/1992 | US5108543 Method of surface treatment |
| 04/28/1992 | US5108540 Method for epitaxial growth from the vapor phase of semiconductor materials |
| 04/22/1992 | EP0481140A1 Method for preparing laminates of ZnSe and ZnS |
| 04/21/1992 | US5106453 MOCVD method and apparatus |
| 04/15/1992 | EP0480804A2 Process for the heteroepitaxial growth of films |
| 04/15/1992 | EP0480557A2 Method of making P-type compound semiconductor |
| 04/15/1992 | CN1016296B Unstrained defect-free epitaxial mismatched heterostructures and method of fabrication |
| 04/02/1992 | WO1992005867A1 Device for generating microwave plasma and method of making diamond film utilizing said device |
| 04/02/1992 | WO1992005577A1 Method and apparatus for growing compound semiconductor crystals |
| 04/02/1992 | CA2069942A1 Microwave plasma generating apparatus and process for preparing diamond layer by utilizing same |
| 04/01/1992 | EP0477374A1 Process for growing semiconductor crystal |
| 04/01/1992 | EP0324811B1 Gas inlet for a plurality of various reaction gases in reaction vessels |
| 03/31/1992 | US5100691 Forming nucleation surface on amorphous substrate, selective vapor deposition of chalcopyrite or intermetallic on this surface, integrated circuits |
| 03/25/1992 | WO1992005110A1 Flame or plasma synthesis of diamond under turbulent and transition flow conditions |
| 03/25/1992 | EP0476774A1 Chamber with a warm and a cold area and at least one gas inlet tube |
| 03/25/1992 | EP0476713A2 Method for forming crystal and crystal article obtained by said method |
| 03/25/1992 | EP0476684A2 Method for selective growth of a thin film on a patterned wafer |
| 03/25/1992 | EP0476676A2 Thin film deposition method |
| 03/25/1992 | EP0476336A2 Composite body, and manufacture and application thereof |
| 03/25/1992 | CN1059763A Method and apparatus for treating surface |
| 03/25/1992 | CA2093144A1 Flame or plasma synthesis of diamond under turbulent and transition flow conditions |
| 03/24/1992 | US5099122 Method for evaluation of transition region of silicon epitaxial wafer |
| 03/24/1992 | US5098857 Method of making semi-insulating gallium arsenide by oxygen doping in metal-organic vapor phase epitaxy |
| 03/24/1992 | US5097890 Heat treating apparatus with cooling fluid nozzles |
| 03/18/1992 | EP0474740A1 Reaction chamber with controlled radiant energy heating and distributed reactant flow |
| 03/17/1992 | US5096860 Nitriding, reacting carbon and alumina in nitrogen in alkali metal oxide presence |
| 03/17/1992 | US5096534 Method for improving the reactant gas flow in a reaction chamber |
| 03/17/1992 | CA1297390C Method of epitaxially growing gallium arsenide on silicon |
| 03/11/1992 | EP0474251A1 Thermal reactor for processing semiconductor wafers and a method of operating such a reactor |
| 03/10/1992 | US5094975 Conductive crystals epitaxially grown in square holes |
| 03/10/1992 | US5094711 Process for producing single crystal titanium carbide whiskers |
| 03/04/1992 | EP0473067A1 Wafer processing reactor |
| 03/04/1992 | EP0472666A1 Cvd grown transition metal carbide and nitride whiskers |
| 03/03/1992 | US5093557 Substrate heater and heating element |
| 03/03/1992 | US5092728 Substrate loading apparatus for a CVD process |
| 02/26/1992 | EP0318506A4 Laser assisted fiber growth |
| 02/25/1992 | US5091765 Detector |
| 02/25/1992 | US5091320 Optical method for controlling thickness of semiconductor |
| 02/25/1992 | US5091208 Novel susceptor for use in chemical vapor deposition apparatus and its method of use |
| 02/25/1992 | US5091044 Methods of substrate heating for vapor phase epitaxial growth |
| 02/25/1992 | CA1296241C Method for epitaxial growth from the vapour phase of semiconductor materials |
| 02/19/1992 | EP0471365A1 Semiconductor wafer processing apparatus |
| 02/18/1992 | US5088922 Heat-treatment apparatus having exhaust system |
| 02/18/1992 | US5088697 Heat treating apparatus |
| 02/12/1992 | EP0470644A2 Superhard material film structure, process of making and use of same |
| 02/11/1992 | US5087434 Synthesis of diamond powders in the gas phase |
| 02/11/1992 | US5087433 Method and apparatus for the production of SiC whisker |
| 02/11/1992 | CA1295455C Hexaamminealuminum iodide monoammoniate and process for its preparation |
| 02/06/1992 | WO1992002109A1 Coreless refractory fibres |
| 02/06/1992 | WO1992001828A1 Method and device for manufacturing diamond |
| 02/06/1992 | WO1992001827A1 Oriented diamond crystals |
| 02/04/1992 | US5085887 Wafer reactor vessel window with pressure-thermal compensation |
| 01/30/1992 | DE4106846C1 High vacuum tight drive for MBE appts. - comprising mounting head for substrate carrier pivotable between deposition position and charging position |
| 01/29/1992 | EP0468377A1 Preparation of silicon carbide whiskers |
| 01/25/1992 | CA2043679A1 Preparation of silicon carbide whiskers |
| 01/23/1992 | WO1992001092A1 Epitaxial synthesis of diamond crystals at high growth rates |
| 01/22/1992 | EP0467624A1 Apparatus for and method of backside protection during substrate processing |
| 01/22/1992 | EP0467392A1 Chemical vapor depositions apparatus and method of manufacturing annealed films |
| 01/22/1992 | EP0467043A2 Free standing diamond sheet and method and apparatus for making same |