Patents for C30B 15 - Single-crystal growth by pulling from a melt, e.g. czochralski method (9,854) |
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02/08/1994 | US5284640 Making carbon-free polycrystalline silicon by ptrolysis of gaseous silicon compound |
02/08/1994 | US5284631 Stable pulling of a silicon cylinder from a double-structured crucible having a thick bottom to insure stable heat convection and prevent bubbling; wafers |
02/03/1994 | WO1993021364A3 Epitaxially strengthened single crystal aluminum garnet reinforcement fibers |
01/20/1994 | DE4223458A1 Reducing semiconductor material in size by shock thermal treatment - from super-heated steam or oxygen@-hydrogen@ gas flame within an evacuated chamber |
01/19/1994 | EP0330698B1 PROCESS FOR PURIFYING (Nb1-xTax)2O5 AND THE PREPARATION OF KNb1-xTaxO3-CRYSTALS THEREFROM |
01/18/1994 | US5280534 Yag laser with manganese dopant |
01/18/1994 | US5280492 Halogenated metallic phosphate |
01/18/1994 | US5279798 Silicon single crystal manufacturing apparatus |
01/11/1994 | US5277934 Method for protecting a graphite chuck for a starter filament in the manufacture of polycrystalline silicon |
01/05/1994 | CN1080334A Method for growth of tetravalent chromium doping high-temp oxide crystal using protective iridium crucible |
12/23/1993 | DE4319788A1 Single crystal growth process for prodn. of silicon single crystal with constant dopant concn. - by melting material in crucible with added impurities, maintaining solid layer and melting from upper portion while drawing |
12/22/1993 | CN1023240C Growth technique of scintillation crystal of barium fluoride possessing high resistance of irradiation |
12/15/1993 | EP0573855A1 Process for contamination free comminuting of semi-conductor material, especially of silicon |
12/14/1993 | US5270020 Apparatus for manufacturing silicon single crystals |
12/14/1993 | US5269875 Method of adjusting concentration of oxygen in silicon single crystal and apparatus for use in the method |
12/09/1993 | DE4218123A1 Appts. for continuous supply of charge for a crucible - has the charge melted at an intermediate stage |
12/08/1993 | EP0573193A1 Method of preparing metal oxide crystal |
12/07/1993 | US5268063 Electromagnetically heating silicon melt; drawing |
12/07/1993 | US5268061 Method and apparatus for producing a manganese-zinc ferrite single crystal using a local liquid pool formation |
12/07/1993 | US5268060 Method of manufacturing oxide superconducting materials |
11/30/1993 | US5266151 Inside edge defined, self-filling (IESF) die for crystal growth |
11/23/1993 | US5264189 Apparatus for growing silicon crystals |
11/18/1993 | EP0569968A2 Method of producing single crystal of KTiOPO4 |
11/09/1993 | US5260037 Apparatus for producing silicon single crystal |
11/09/1993 | US5259919 Crytallization, rotation, czochralski pulling method |
11/09/1993 | US5259916 Process for improved doping of semiconductor crystals |
11/03/1993 | EP0568183A1 Device for pulling silicon single crystal |
10/28/1993 | WO1993021364A2 Epitaxially strengthened single crystal aluminum garnet reinforcement fibers |
10/27/1993 | EP0567008A2 Process to grow several single crystal and apparatus therefor |
10/21/1993 | DE4213097A1 Dopant feeding appts. for single crystal prodn. means |
10/19/1993 | US5254319 Single crystal pulling apparatus |
10/12/1993 | US5252175 Capillary pressure relief for magnetic Kyropoulos growth of semiconductor crystals |
10/06/1993 | EP0309540B1 An apparatus and process for edge-defined, film-fed crystal growth |
10/06/1993 | CN1022336C Crystal growing apparatus |
09/28/1993 | US5248378 Method and apparatus for producing silicon single crystal |
09/15/1993 | EP0559921A1 Apparatus for and method of producing single crystal semiconductor of high dissociation pressure compound |
09/14/1993 | USRE34375 System for controlling apparatus for growing tubular crystalline bodies |
09/07/1993 | US5242667 Crystallization with rotation andd wiping |
09/07/1993 | US5242531 Continuous liquid silicon recharging process in czochralski crucible pulling |
09/02/1993 | WO1993017158A1 Method and apparatus for growing shaped crystals |
09/01/1993 | EP0557480A1 Multipart supporting crucible. |
08/31/1993 | US5240902 Substrate of single crystal of oxide, superconductive device using said substrate and method of producing said superconductive device |
08/31/1993 | US5240685 Apparatus for growing a GaAs single crystal by pulling from GaAs melt |
08/31/1993 | US5240684 One- and two-dimensional cameras generating video signals and pixel clocks |
08/11/1993 | EP0555040A1 A single crystal pulling apparatus |
08/11/1993 | EP0555010A1 Process for producing silicon single crystal |
08/10/1993 | US5234664 Having slippage means between pulling shaft and seed crystal permitting difference between their rotational speeds; preventing vibrations and breakage |
08/05/1993 | WO1993015242A1 METHOD FOR GROWING MONOCRYSTALS OF KTiOPO¿4? |
08/05/1993 | DE4202528A1 Prodn. of silicon@ foils used in mfr. of solar cells - by continuous crystallisation of silicon@ from melt onto base having one or more layers |
08/04/1993 | EP0553677A2 Monocrystal growing method |
08/04/1993 | EP0403560B1 Growing semiconductor crystalline materials |
08/03/1993 | CA1320897C Method and apparatus for making inorganic webs and structures formed thereof |
07/20/1993 | US5229082 Melt replenishment system for dendritic web growth |
07/13/1993 | CA1320101C Crystal growing apparatus |
06/30/1993 | CN1073729A Cesium triborate monocrystal growth method and nonlinear optical device made by use of that |
06/29/1993 | US5223078 Conical portion growth control method and apparatus |
06/29/1993 | US5223077 Providing silicon melt reservoir formed of induction coil having layer of high melting insulator on surface, filling with raw material, melting by external heating and inductin coil, drawing |
06/23/1993 | EP0547212A1 Neodymium-doped gehlenite crystal and laser using same |
06/22/1993 | CA1319245C Growth of congruently melting gadolinium scandium gallium garnet |
06/02/1993 | EP0366698B1 Growth of semiconductor single crystals |
06/01/1993 | US5215620 Controlling oxygen concentration distribution by controlling rotation rate of quartz crucible; pulsed, square wave function additive rate |
05/25/1993 | CA1318224C System for controlling apparatus for growing tubular crystalline bodies |
05/19/1993 | CN1072221A Bismuth silicate (bso) single-crystal growth by crucible downward method |
05/19/1993 | CN1020767C Method and apparatus for manufacturing silicon single crystals |
05/18/1993 | US5212394 Compound semiconductor wafer with defects propagating prevention means |
05/05/1993 | CN1020482C System for controlling apparatus for growing tubular crystalline bodies |
05/05/1993 | CN1020481C Manufacturing equipment for single silicon crystal |
05/04/1993 | US5207992 Carbon composite cylinder covers exterior surface of crucible; durability |
05/04/1993 | CA1317202C Method of drawing-up a single crystal using a double-crucible apparatus and double-crucible apparatus therefor |
04/28/1993 | CN1071468A Process for preparing barium titanate single-crystal |
04/21/1993 | EP0538048A1 A single crystal pulling apparatus |
04/21/1993 | EP0537988A1 An apparatus for supplying granular raw material for a semiconductor single crystal pulling apparatus |
04/14/1993 | EP0536999A2 Process for preparing barium titanate single crystals |
04/14/1993 | EP0536958A1 Process for producing a semiconductor wafer |
04/14/1993 | EP0536405A1 Process for pulling up single crystal |
04/14/1993 | EP0536394A1 Method of producing polycrystalline silicon rods for semiconductors and thermal decomposition furnace therefor |
04/14/1993 | EP0265518B1 Congruently melting complex oxides |
04/14/1993 | CN1070960A Tungsten-bronze optical rafracting crystal and its made technology |
04/06/1993 | CA1315649C Epitaxial ba-y-cu-o superconductor film |
04/01/1993 | WO1993006264A1 Apparatus for and method of producing single crystal semiconductor of high dissociation pressure compound |
03/24/1993 | EP0532815A1 Method for manufacturing lattice-matched substrates for high-Tc superconductor films |
03/23/1993 | US5196173 Apparatus for process for growing crystals of semiconductor materials |
03/23/1993 | US5196086 Monocrystal rod pulled from a melt |
03/23/1993 | US5196085 Active magnetic flow control in Czochralski systems |
03/18/1993 | WO1993005205A1 Multipart supporting crucible |
03/18/1993 | DE4130253A1 Mehrteiliger stuetztiegel Multipart stuetztiegel |
03/17/1993 | CN1070009A Method for growing gallium antimonide single crystal by straight drawing method and apparatus |
03/10/1993 | EP0530825A1 A single crystal growing apparatus |
03/10/1993 | EP0530397A1 Czochralski crystal pulling process and an apparatus for carrying out the same |
03/03/1993 | EP0529594A1 A glassy carbon coated graphite component for use in the production of silicon crystal growth |
03/03/1993 | EP0529571A1 Method for operating a single crystal rod pull-up growing apparatus |
02/25/1993 | DE4127819A1 Discontinuous silicon@ prodn. by thermal decomposition - in which deposition occurs on inner wall of silicon@ tube and deposit is collected by periodically melting |
02/24/1993 | CN1069298A Method for controlling oxygen content of silicon crystals using combination of cusp magnetic field and crystal and crucible rotation rates |
02/17/1993 | EP0527477A1 Process for controlling the oxygen content in silicon crystals |
02/16/1993 | US5186784 Process for improved doping of semiconductor crystals |
02/03/1993 | EP0525765A1 Apparatus for growing single crystals |
02/03/1993 | EP0525619A1 Compound semiconductor single crystal |
02/02/1993 | US5183528 Method of automatic control of growing neck portion of a single crystal by the cz method |
01/26/1993 | US5182790 Infrared optical fiber and a method of manufacturing the same |
01/21/1993 | WO1993001139A1 Neodymium-doped gehlenite crystal and laser using same |