Patents for C30B 15 - Single-crystal growth by pulling from a melt, e.g. czochralski method (9,854)
02/1994
02/08/1994US5284640 Making carbon-free polycrystalline silicon by ptrolysis of gaseous silicon compound
02/08/1994US5284631 Stable pulling of a silicon cylinder from a double-structured crucible having a thick bottom to insure stable heat convection and prevent bubbling; wafers
02/03/1994WO1993021364A3 Epitaxially strengthened single crystal aluminum garnet reinforcement fibers
01/1994
01/20/1994DE4223458A1 Reducing semiconductor material in size by shock thermal treatment - from super-heated steam or oxygen@-hydrogen@ gas flame within an evacuated chamber
01/19/1994EP0330698B1 PROCESS FOR PURIFYING (Nb1-xTax)2O5 AND THE PREPARATION OF KNb1-xTaxO3-CRYSTALS THEREFROM
01/18/1994US5280534 Yag laser with manganese dopant
01/18/1994US5280492 Halogenated metallic phosphate
01/18/1994US5279798 Silicon single crystal manufacturing apparatus
01/11/1994US5277934 Method for protecting a graphite chuck for a starter filament in the manufacture of polycrystalline silicon
01/05/1994CN1080334A Method for growth of tetravalent chromium doping high-temp oxide crystal using protective iridium crucible
12/1993
12/23/1993DE4319788A1 Single crystal growth process for prodn. of silicon single crystal with constant dopant concn. - by melting material in crucible with added impurities, maintaining solid layer and melting from upper portion while drawing
12/22/1993CN1023240C Growth technique of scintillation crystal of barium fluoride possessing high resistance of irradiation
12/15/1993EP0573855A1 Process for contamination free comminuting of semi-conductor material, especially of silicon
12/14/1993US5270020 Apparatus for manufacturing silicon single crystals
12/14/1993US5269875 Method of adjusting concentration of oxygen in silicon single crystal and apparatus for use in the method
12/09/1993DE4218123A1 Appts. for continuous supply of charge for a crucible - has the charge melted at an intermediate stage
12/08/1993EP0573193A1 Method of preparing metal oxide crystal
12/07/1993US5268063 Electromagnetically heating silicon melt; drawing
12/07/1993US5268061 Method and apparatus for producing a manganese-zinc ferrite single crystal using a local liquid pool formation
12/07/1993US5268060 Method of manufacturing oxide superconducting materials
11/1993
11/30/1993US5266151 Inside edge defined, self-filling (IESF) die for crystal growth
11/23/1993US5264189 Apparatus for growing silicon crystals
11/18/1993EP0569968A2 Method of producing single crystal of KTiOPO4
11/09/1993US5260037 Apparatus for producing silicon single crystal
11/09/1993US5259919 Crytallization, rotation, czochralski pulling method
11/09/1993US5259916 Process for improved doping of semiconductor crystals
11/03/1993EP0568183A1 Device for pulling silicon single crystal
10/1993
10/28/1993WO1993021364A2 Epitaxially strengthened single crystal aluminum garnet reinforcement fibers
10/27/1993EP0567008A2 Process to grow several single crystal and apparatus therefor
10/21/1993DE4213097A1 Dopant feeding appts. for single crystal prodn. means
10/19/1993US5254319 Single crystal pulling apparatus
10/12/1993US5252175 Capillary pressure relief for magnetic Kyropoulos growth of semiconductor crystals
10/06/1993EP0309540B1 An apparatus and process for edge-defined, film-fed crystal growth
10/06/1993CN1022336C Crystal growing apparatus
09/1993
09/28/1993US5248378 Method and apparatus for producing silicon single crystal
09/15/1993EP0559921A1 Apparatus for and method of producing single crystal semiconductor of high dissociation pressure compound
09/14/1993USRE34375 System for controlling apparatus for growing tubular crystalline bodies
09/07/1993US5242667 Crystallization with rotation andd wiping
09/07/1993US5242531 Continuous liquid silicon recharging process in czochralski crucible pulling
09/02/1993WO1993017158A1 Method and apparatus for growing shaped crystals
09/01/1993EP0557480A1 Multipart supporting crucible.
08/1993
08/31/1993US5240902 Substrate of single crystal of oxide, superconductive device using said substrate and method of producing said superconductive device
08/31/1993US5240685 Apparatus for growing a GaAs single crystal by pulling from GaAs melt
08/31/1993US5240684 One- and two-dimensional cameras generating video signals and pixel clocks
08/11/1993EP0555040A1 A single crystal pulling apparatus
08/11/1993EP0555010A1 Process for producing silicon single crystal
08/10/1993US5234664 Having slippage means between pulling shaft and seed crystal permitting difference between their rotational speeds; preventing vibrations and breakage
08/05/1993WO1993015242A1 METHOD FOR GROWING MONOCRYSTALS OF KTiOPO¿4?
08/05/1993DE4202528A1 Prodn. of silicon@ foils used in mfr. of solar cells - by continuous crystallisation of silicon@ from melt onto base having one or more layers
08/04/1993EP0553677A2 Monocrystal growing method
08/04/1993EP0403560B1 Growing semiconductor crystalline materials
08/03/1993CA1320897C Method and apparatus for making inorganic webs and structures formed thereof
07/1993
07/20/1993US5229082 Melt replenishment system for dendritic web growth
07/13/1993CA1320101C Crystal growing apparatus
06/1993
06/30/1993CN1073729A Cesium triborate monocrystal growth method and nonlinear optical device made by use of that
06/29/1993US5223078 Conical portion growth control method and apparatus
06/29/1993US5223077 Providing silicon melt reservoir formed of induction coil having layer of high melting insulator on surface, filling with raw material, melting by external heating and inductin coil, drawing
06/23/1993EP0547212A1 Neodymium-doped gehlenite crystal and laser using same
06/22/1993CA1319245C Growth of congruently melting gadolinium scandium gallium garnet
06/02/1993EP0366698B1 Growth of semiconductor single crystals
06/01/1993US5215620 Controlling oxygen concentration distribution by controlling rotation rate of quartz crucible; pulsed, square wave function additive rate
05/1993
05/25/1993CA1318224C System for controlling apparatus for growing tubular crystalline bodies
05/19/1993CN1072221A Bismuth silicate (bso) single-crystal growth by crucible downward method
05/19/1993CN1020767C Method and apparatus for manufacturing silicon single crystals
05/18/1993US5212394 Compound semiconductor wafer with defects propagating prevention means
05/05/1993CN1020482C System for controlling apparatus for growing tubular crystalline bodies
05/05/1993CN1020481C Manufacturing equipment for single silicon crystal
05/04/1993US5207992 Carbon composite cylinder covers exterior surface of crucible; durability
05/04/1993CA1317202C Method of drawing-up a single crystal using a double-crucible apparatus and double-crucible apparatus therefor
04/1993
04/28/1993CN1071468A Process for preparing barium titanate single-crystal
04/21/1993EP0538048A1 A single crystal pulling apparatus
04/21/1993EP0537988A1 An apparatus for supplying granular raw material for a semiconductor single crystal pulling apparatus
04/14/1993EP0536999A2 Process for preparing barium titanate single crystals
04/14/1993EP0536958A1 Process for producing a semiconductor wafer
04/14/1993EP0536405A1 Process for pulling up single crystal
04/14/1993EP0536394A1 Method of producing polycrystalline silicon rods for semiconductors and thermal decomposition furnace therefor
04/14/1993EP0265518B1 Congruently melting complex oxides
04/14/1993CN1070960A Tungsten-bronze optical rafracting crystal and its made technology
04/06/1993CA1315649C Epitaxial ba-y-cu-o superconductor film
04/01/1993WO1993006264A1 Apparatus for and method of producing single crystal semiconductor of high dissociation pressure compound
03/1993
03/24/1993EP0532815A1 Method for manufacturing lattice-matched substrates for high-Tc superconductor films
03/23/1993US5196173 Apparatus for process for growing crystals of semiconductor materials
03/23/1993US5196086 Monocrystal rod pulled from a melt
03/23/1993US5196085 Active magnetic flow control in Czochralski systems
03/18/1993WO1993005205A1 Multipart supporting crucible
03/18/1993DE4130253A1 Mehrteiliger stuetztiegel Multipart stuetztiegel
03/17/1993CN1070009A Method for growing gallium antimonide single crystal by straight drawing method and apparatus
03/10/1993EP0530825A1 A single crystal growing apparatus
03/10/1993EP0530397A1 Czochralski crystal pulling process and an apparatus for carrying out the same
03/03/1993EP0529594A1 A glassy carbon coated graphite component for use in the production of silicon crystal growth
03/03/1993EP0529571A1 Method for operating a single crystal rod pull-up growing apparatus
02/1993
02/25/1993DE4127819A1 Discontinuous silicon@ prodn. by thermal decomposition - in which deposition occurs on inner wall of silicon@ tube and deposit is collected by periodically melting
02/24/1993CN1069298A Method for controlling oxygen content of silicon crystals using combination of cusp magnetic field and crystal and crucible rotation rates
02/17/1993EP0527477A1 Process for controlling the oxygen content in silicon crystals
02/16/1993US5186784 Process for improved doping of semiconductor crystals
02/03/1993EP0525765A1 Apparatus for growing single crystals
02/03/1993EP0525619A1 Compound semiconductor single crystal
02/02/1993US5183528 Method of automatic control of growing neck portion of a single crystal by the cz method
01/1993
01/26/1993US5182790 Infrared optical fiber and a method of manufacturing the same
01/21/1993WO1993001139A1 Neodymium-doped gehlenite crystal and laser using same
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