| Patents for C30B 15 - Single-crystal growth by pulling from a melt, e.g. czochralski method (9,854) |
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| 01/19/1993 | US5180562 Melting in a vacuum and pulling crystals then heat treatment |
| 01/12/1993 | US5178720 Method for controlling oxygen content of silicon crystals using a combination of cusp magnetic field and crystal and crucible rotation rates |
| 01/07/1993 | WO1993000462A1 Device for pulling up single crystal |
| 01/07/1993 | DE4122404A1 Continuous ribbon strip crystal - has carrier body to carry layer of substance through melting zone and draw=off as ribbon |
| 01/07/1993 | DE4122397A1 Thin walled, shaped crystals, for solar cell mfr. - comprises forming melt using radiation, maintaining temp. with electric current and pulling crystal |
| 01/07/1993 | DE4122120A1 Improved seal design for crystal removal lock of a reactor - consists of protecting the seal from direct radiation from crystal and avoidance of shear action in the closure |
| 01/05/1993 | US5176490 Monocrystal rod conveying apparatus |
| 12/30/1992 | CN1067458A Rutile single crystals and their grouth processes |
| 12/29/1992 | US5174853 Forsterite single crystal and method for the manufacture of the same |
| 12/29/1992 | US5174801 Manufacture of quartz glass crucible for use in the manufacture of single crystal silicon |
| 12/29/1992 | CA1311906C Preparation of high purity boron |
| 12/22/1992 | US5173911 Mixed silicates of yttrium and lanthanide and laser using monocrystals of these silicates |
| 12/22/1992 | US5173270 Monocrystal rod pulled from a melt |
| 12/15/1992 | CA1311402C Process for the preparation of doped 3-5 monocristalline semi-dielectrics and their applications |
| 12/10/1992 | DE4218618A1 Single-crystal semiconductor growth technique - using Czochralski method with applied magnetic field, provides equalised axial oxygen concn. of crystal blank |
| 12/08/1992 | US5170061 Method of and apparatus for measuring oscillation of the outside diameter of a melt surface |
| 12/02/1992 | EP0516014A1 Rutile single crystals and their growth processes |
| 11/17/1992 | US5164041 Nonsemiconductor laser |
| 11/12/1992 | WO1992019797A1 Process for pulling up single crystal |
| 11/12/1992 | DE4214795A1 Czochralski growth or oxide monocrystal(s) - uses as standard reactor with the addn. of a permeable soreen surrounding the crystal growth region inside the crucible to control temp. |
| 11/11/1992 | CN1019031B Apparatus for manufacturing silicon single crystals |
| 11/10/1992 | US5162072 Heaters for controlling temperature gradient across lower surface of melt |
| 11/04/1992 | EP0511663A1 Method of producing silicon single crystal |
| 11/03/1992 | US5160401 For use as substrates for high temperature superconducting films |
| 10/29/1992 | WO1992018672A1 Device and method for growing crystal |
| 10/28/1992 | CN1018852B Process for preparing lithium niobate monocrystal by erbium and magnesium doping |
| 10/28/1992 | CN1018851B Apparatus for manufacturing single silicon crystal |
| 10/27/1992 | EP0608213A4 Apparatus for growing hollow crystalline bodies from the melt. |
| 10/21/1992 | EP0509312A2 Czochralski method using a member for intercepting radiation from raw material molten solution and apparatus therefor |
| 10/20/1992 | US5156978 Growing hollow crystalline body from melt containg dopant, forming P-N junction |
| 10/15/1992 | DE4207750A1 Czochralski single crystalline silicon@ growth - gives improved yield of defect-free bars due to optimisation of particle distribution, roughness, fracture and pull strength of the polycrystalline grains continuously added |
| 10/13/1992 | US5154795 System for setting analysis condition for a thermal analysis of a fluid inside an apparatus |
| 10/08/1992 | DE4204777A1 Zonal single crystal growth with increased temp. gradient control - uses heat screens and sepd. heater elements to control and alter the solid-liq. interface position |
| 10/07/1992 | CN1065105A Double-layer crucible for preparing semiconducting monocrystal |
| 10/06/1992 | US5152867 Czochralski method |
| 10/06/1992 | US5152433 Apparatus for feeding granular silicon material |
| 09/23/1992 | EP0504837A2 Method and apparatus for producing silicon single crystal |
| 09/17/1992 | DE4108394A1 Silicon@ substrate mfr. for DRAM components - comprises forming silicon@ mirror wafer and subjecting it to two=stage heat treatment process, then removing surface layer |
| 09/16/1992 | EP0503816A1 Heat treatment of Si single crystal |
| 09/16/1992 | EP0474810A4 System for controlling crystal growth apparatus and melt replenishment system therefor |
| 09/08/1992 | US5146468 Gas doping of solids by crystal growth |
| 09/08/1992 | US5145550 Boron oxide encapsulant |
| 09/01/1992 | US5143704 Apparatus for manufacturing silicon single crystals |
| 08/26/1992 | EP0417132B1 Lithium niobate single crystals with congruent composition and process for producing them |
| 08/26/1992 | CN1018002B Apparatus for manufacturing silicon single crystals |
| 08/26/1992 | CN1018001B Apparatus of manufacturing silicon single crystal |
| 08/19/1992 | EP0499471A1 A single crystal pulling apparatus |
| 08/19/1992 | EP0499220A1 Automatic control method for growing single-crystal neck portions |
| 08/18/1992 | US5140604 Mixed strontium and lanthanide oxides and a laser using monocrystals of these oxides |
| 08/18/1992 | US5139750 Rotating quartz crucible with apertures for melting silicon feeds into crystal growing section having a heat shielding member which prevents solidification near the partition |
| 08/18/1992 | CA1306408C Congruently melting complex oxides |
| 08/18/1992 | CA1306407C Apparatus for growing crystals of semiconductor materials |
| 08/12/1992 | EP0498653A2 A method for measuring the diameter of single crystal ingot |
| 08/12/1992 | EP0498652A1 A single crystal pulling apparatus |
| 08/12/1992 | CN1063511A Device and process for growing tetragonal crystal of barium titanate |
| 08/11/1992 | US5138179 Method of and device for diameter measurement used in automatically controlled crystal growth |
| 08/11/1992 | US5137699 Apparatus and method employing interface heater segment for control of solidification interface shape in a crystal growth process |
| 08/05/1992 | EP0497148A1 Process for producing metal wafers and use of silicon wafers |
| 08/04/1992 | US5135727 Neck clamp, cutter, visual cutting monitor mounted on chuck assembly |
| 08/04/1992 | CA1305909C Apparatus and process for growing crystals of semiconductor materials |
| 07/23/1992 | DE4201546A1 Prepn. of single-crystal silicon@ from granular poly:silicon@ - using two-compartment quartz melting crucible |
| 07/23/1992 | DE4200185A1 Continuous semiconductor single crystal pulling - by periodic material addition to crucible and removal from bar outside the chamber |
| 07/21/1992 | US5132100 Optically active single crystal and fabrication process thereof |
| 07/21/1992 | US5132091 Apparatus and method employing focussed radiative heater for control of solidification interface shape in a crystal growth process |
| 07/21/1992 | US5131974 Method of controlling oxygen concentration in single crystal and an apparatus therefor |
| 07/21/1992 | CA1305397C Method for producing a semi-insulating substrate made of a fault-free thermally stable iii-v material |
| 07/15/1992 | EP0494699A2 High purity doping alloys |
| 07/15/1992 | EP0494312A1 Method and apparatus for making single crystal |
| 07/15/1992 | EP0494307A1 Apparatus for making silicon single crystal |
| 07/14/1992 | US5129986 Controlling pneumatic pressure and inert gas flow rate in a defined pattern relative to passage of pulling time |
| 07/08/1992 | EP0493903A1 Method of growing rare earth doped orthosilicates (Ln2-xRExSio5) |
| 07/07/1992 | US5128111 Appartus for making inorganic webs and structures formed thereof |
| 07/01/1992 | EP0386047B1 Process and device for manufacturing monocrystalline semiconductor plates |
| 07/01/1992 | EP0313619B1 System for controlling apparatus for growing tubular crystalline bodies |
| 06/30/1992 | US5126114 Manufacturing method and equipment of single silicon crystal |
| 06/30/1992 | US5126113 Apparatus for producing czochralski-grown single crystals |
| 06/30/1992 | US5126094 Heat treatment of an orthodontic bracket |
| 06/24/1992 | CN1062179A Growing method for green cubic crystal of zirconium oxide |
| 06/17/1992 | EP0490691A1 Gas doping of solids by crystal growth |
| 06/16/1992 | US5122504 Superconducting ribbon process using laser heating |
| 06/10/1992 | CN1061812A Massive saphire growing technology |
| 06/10/1992 | CN1016973B Method and apparatus for manufacturing silicon single crystals |
| 06/09/1992 | CA1302848C Process for making homogeneous lithium niobate |
| 06/03/1992 | EP0488785A1 An automatic device for cutting the neck of a pulled single crystal ingot |
| 05/19/1992 | US5114467 Method for manufacturing magnetostrictive materials |
| 05/13/1992 | EP0484538A1 Silicon single crystal manufacturing apparatus |
| 05/07/1992 | DE4134261A1 Semiconductor layers, for use in solar cells, grown on flexible tape - using crystallisation from solvent in small, unconnected areas on the tape to give single crystalline regions in a continuous process |
| 05/06/1992 | EP0483365A1 Silicon single crystal manufacturing apparatus |
| 05/05/1992 | US5110404 High temperature followed by low temperature of oxygen |
| 04/29/1992 | EP0483003A1 Laser using mixed yttrium and lanthanide silicates single crystals |
| 04/29/1992 | EP0482438A1 Single crystal conical portion growth control method and apparatus |
| 04/29/1992 | EP0482212A1 Silicon single crystal manufacturing apparatus |
| 04/21/1992 | US5106763 Hollow crystalline body is grown from melt; diffusion of dopant |
| 04/21/1992 | US5106593 Apparatus for producing czochralski-grown single crystals |
| 04/15/1992 | WO1992007119A1 Production apparatus and method for semiconductor single crystal |
| 04/15/1992 | CN1060318A Magnetic levitation cold crucible technology for pulling rare-earth-iron monocrystal |
| 04/08/1992 | CN1016191B Production of high-oxygen-content silicon monocrystal substrate for semiconductor devices |
| 04/08/1992 | CN1016160B Apparatus for feeding granular silicon material |
| 04/07/1992 | US5102494 Edge defined film fed crystal growth technique |
| 04/01/1992 | EP0477387A1 Process for producing single crystal of oxide |