C30B 15 - Single-crystal growth by pulling from a melt, e.g. czochralski method

Patents for C30B 15 - Single-crystal growth by pulling from a melt, e.g. czochralski method (9,854)
11/2006
11/07/2006	US7132060 Scintillation substances (variants)
11/02/2006	WO2006081023A3 Method and apparatus for monolayer deposition (mld)
11/02/2006	US20060243194 Method of forming a crystalline phase material
11/02/2006	US20060243192 Method of simulation with respect to density distribution and size distribution of void defect within single crystal and oxygen precipitation nucleus within single crystal
11/02/2006	EP1717355A1 Silicon single crystal, silicon wafer, production apparatus therefor and process for producing the same
11/02/2006	EP0948037B1 Method for manufacturing a silicon epitaxial wafer
11/02/2006	DE10220964B4 Anordnung zur Herstellung von Kristallstäben mit definiertem Querschnitt und kolumnarer polykristalliner Struktur mittels tiegelfreier kontinuierlicher Kristallisation Arrangement for producing crystal rods having a defined cross-section and a columnar polycrystalline structure by means of crucible-free continuous crystallization
11/01/2006	CN2832837Y Internal water cooling mechanism for rotary drawing axis of crystal
11/01/2006	CN1854353A Low defect density epitaxial wafer and a process for the preparation thereof
10/2006
10/31/2006	US7129123 SOI wafer and a method for producing an SOI wafer
10/26/2006	WO2006111668A1 Method for growing thin semiconductor ribbons
10/26/2006	US20060236919 Process for producing single crystal and silicon crystal wafer
10/26/2006	US20060236916 Quartz glass crucible for pulling up silicon single crystal and method for manufacture thereof
10/26/2006	DE112004002325T5 Quarztiegel mit reduziertem Blasengehalt und Verfahren zu seiner Herstellung Quartz crucibles with reduced bubble content, and process for its preparation
10/25/2006	CN2830424Y Monocrystal producer for smelting high pureness metals
10/24/2006	US7125608 Single-crystal silicon ingot and wafer having homogeneous vacancy defects, and method and apparatus for making same
10/24/2006	US7125450 Process for preparing single crystal silicon using crucible rotation to control temperature gradient
10/19/2006	WO2004034380A3 Bit-wise aluminum oxide optical data storage medium
10/18/2006	EP1713121A2 Silicon on insulator structure from low defect density single crystal silicon
10/18/2006	CN1849269A Method for producing an Si3N4 coated SiO2 molded body
10/18/2006	CN1848562A Laser crystal doping neodymium lanthanum potassium molybdate
10/18/2006	CN1847471A Self-frequency doubling laser crystal Nd-doped calcium niobate
10/18/2006	CN1847470A Non-linear optical crystal calcium niobate
10/18/2006	CN1847469A Prepn process of Ce-doped lanthanum oxide scintillation crystal
10/18/2006	CN1280456C Method for production of low defect density silicon
10/18/2006	CN1280455C Low defect density silicon
10/18/2006	CN1280454C Low defect density, ideal oxygen precipitating silicon
10/17/2006	US7122082 Silicon wafer and manufacturing method thereof
10/12/2006	WO2006107769A2 Solidification of crystalline silicon from reusable crucible molds
10/12/2006	WO2006106644A1 Si-DOPED GaAs SINGLE CRYSTAL INGOT AND PROCESS FOR PRODUCING THE SAME, AND Si-DOPED GaAs SINGLE CRYSTAL WAFER PRODUCED FROM SAID Si-DOPED GaAs SINGLE CRYSTAL INGOT
10/12/2006	US20060228565 Polycrystalline silicon rod and method for processing the same
10/12/2006	US20060225640 Method for manufacturing silicon single crystal, and silicon wafer
10/12/2006	US20060225639 Method for growing silicon single crystal, and silicon wafer
10/12/2006	DE10057413B4 Verfahren zur direkten Synthese von Indiumphosphid A process for the direct synthesis of indium phosphide
10/11/2006	EP1498515A4 Device for pulling monocrystals
10/11/2006	CN2825658Y System for controlling the isodiametric growth of crystal
10/11/2006	CN1845881A Method for producing a piece made of sintered amorphous silica, and mold and slurry used in this method
10/11/2006	CN1844492A Method for preparing nonstoichiometric ratio magnesia alumina spinel single crystals
10/11/2006	CN1844490A Method for preventing shake of flexible shaft in single crystal furnace and damper therefor
10/11/2006	CN1844489A Method and system for automatic control of Czochralski crystal grower
10/11/2006	CN1279220C Filtering and inertness of combustible dust in process waste gas
10/10/2006	US7118789 Silica glass crucible
10/05/2006	WO2006103837A1 Process for producing silicon single-crystal, annealed wafer and process for producing annealed wafer
10/05/2006	US20060219162 Solidification of crystalline silicon from reusable crucible molds
10/04/2006	EP1004899B1 Scintillating substance and scintillating wave-guide element
10/04/2006	CN1840746A System and method for controlling the isodiametric growth of crystal
10/04/2006	CN1840745A Thermal-insulation device for single-crystal furnace
10/04/2006	CN1840744A Crystal lifting device
09/2006
09/28/2006	WO2006100114A1 Process for the production of si by reduction of siclj with liquid zn
09/28/2006	US20060213424 Silicon wafer and process for the heat treatment of a silicon wafer
09/28/2006	DE10250822B4 Verfahren zur Herstellung eines mit leichtflüchtigem Fremdstoff dotierten Einkristalls aus Silicium A method for producing a readily volatile impurity doped silicon monocrystal
09/28/2006	CA2601333A1 Process for the production of si by reduction of sicl4 with liquid zn
09/27/2006	EP1704118A1 New material and method of fabrication therefor
09/27/2006	CN1276998C Method and system for stabilizing dendritic web crystal growth
09/26/2006	US7112904 Magnetic rotation transmitting device, hermetic stirring unit, and electric furnace
09/21/2006	US20060207498 Power supplies for driving H-bridges
09/20/2006	EP1702085A2 Device for depositing a polycrystalline silicon layer on a support
09/14/2006	US20060201412 Method of making highly uniform low-stress single crystals with reduced scattering
09/14/2006	DE102005011109A1 Manufacture of single crystal, e.g. from silicon, by measuring pressure in chamber and shutting off flow of cooling fluid if pressure exceeds threshold
09/14/2006	DE10019601B4 Layer composite material for sliding elements and for plain bearings, particularly crankshaft bearing, camshaft bearings or connecting rod bearings, comprises primary layer made from copper alloy or aluminum alloy
09/13/2006	EP1699737A1 Silicon feedstock for solar cells
09/13/2006	CN1274887C Method for preparing tungstate single crystal
09/12/2006	US7105050 Method for the production of low defect density silicon
09/08/2006	WO2006007082A3 Systems and methods for manufacturing granular material, and for measuring and reducing dust in granular material
09/07/2006	US20060197529 Magnetic resonance spectrometer
09/07/2006	US20060196409 High throughput screening of crystallization materials
09/07/2006	US20060196408 Manufacturing method for electronic component, electronic component, and electronic equipment
09/06/2006	CN1273652C Combined copple for growing spherical heterotype crystal
09/06/2006	CN1273651C Method and appts. for pulling crystal
08/2006
08/31/2006	US20060191470 Method and apparatus for growing multiple crystalline ribbons from a single crucible
08/31/2006	US20060191469 Method for pulling up single crystal
08/31/2006	US20060191468 Process for producing single crystal
08/31/2006	US20060191467 Group iii nitride based semiconductor substrate and process for manufacture thereof
08/30/2006	CN1824848A Process for producing a silicon single crystal with controlled carbon content
08/30/2006	CN1824847A Process and device for overcoming melt ageing, in crystal growth
08/30/2006	CN1272475C Method and equipment for producing single crystal of oxides
08/29/2006	US7098470 Method for non-destructive measuring of radiation dose
08/29/2006	US7097920 Group III nitride based semiconductor substrate and process for manufacture thereof
08/29/2006	US7097718 Single crystal silicon wafer having an epitaxial layer substantially free from grown-in defects
08/29/2006	US7097707 GaN boule grown from liquid melt using GaN seed wafers
08/24/2006	WO2006009802A3 A melter assembly and method for charging a crystal forming apparatus with molten source material
08/24/2006	DE4301072B4 Verfahren zum Ziehen von Einkristallen aus einer Schmelze A method for growing single crystals from a melt
08/24/2006	DE112004001947T5 Vorrichtung zum Herstellen eines Einkristallhalbleiters Apparatus for manufacturing a semiconductor single crystal
08/24/2006	DE102006016325A1 Preparation of seed crystal from semiconductor material, contains slip zones used for drawing single crystals by Czochralski method or by zone drawing where crystal block is silicon rod of specific diameter
08/24/2006	DE102005006186A1 Verfahren zur Herstellung eines Einkristalls aus Silizium mit kontrolliertem Kohlenstoffgehalt A process for preparing a single crystal of silicon with a controlled carbon content
08/23/2006	CN1823183A Method for producing crystal of fluoride
08/16/2006	EP1689916A1 Scintillation substances (variants)
08/16/2006	CN1818151A Method for growing tantalic acid lithium in diameter of 5-inch single crystal
08/16/2006	CN1269998C Method for preparing fluorinion doped lead tungstate scintillation crystal
08/16/2006	CN1269765C Electrophoretically redensified SiO2, moulded body, method for the production and use thereof
08/16/2006	CN1269749C Method for the production of a shaped silica glass body
08/15/2006	US7090724 Langasite single crystal ingot, substrate for piezoelectric device and method for manufacture thereof, and surface acoustic wave device
08/10/2006	WO2006083169A1 Method for charging a crucible with solar grade silicon
08/10/2006	US20060174820 Method for producincg silicon wafer and silicon wafer
08/10/2006	US20060174819 Method for producing single crystal and single crystal
08/10/2006	US20060174651 Mehtod for producing quartz glass crucible for use in pulling silicon single crystal and quartz glass crucible produced by said method
08/09/2006	EP1688519A2 Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults
08/09/2006	EP1558795B1 Method and apparatus for growing multiple crystalline ribbons from a single crucible
08/09/2006	EP1356139B1 Low defect density silicon substantially free of oxidation induced stacking faults having a vacancy-dominated core
08/09/2006	CN2804129Y Warming appts of single crystal growing furnace

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