| Patents for C30B 15 - Single-crystal growth by pulling from a melt, e.g. czochralski method (9,854) |
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| 01/18/2007 | US20070012238 Process for the manufacture of doped semiconductor single crystals, and III-V semiconductor single crystal |
| 01/18/2007 | DE10041582B4 Quarzglastiegel sowie Verfahren zur Herstellung desselben Quartz glass crucible of the same and processes for preparing |
| 01/17/2007 | EP1743960A1 Self-coated single crystal, and production apparatus and process therefor |
| 01/17/2007 | EP1743385A1 Method and device for producing metal foils |
| 01/17/2007 | EP1743055A1 Method for the growth of semiconductor ribbons |
| 01/17/2007 | CN1896342A Ytterbium-doped lutecium disilicate laser crystal and its preparation |
| 01/17/2007 | CN1896339A Process for producing silicon semiconductor wafers with defined defect properties, and silicon semiconductor wafers having these defect properties |
| 01/17/2007 | CN1896338A Growth of tricesium borate monocrystal cosolvent |
| 01/17/2007 | CN1896021A 石英玻璃坩埚 Quartz glass crucible |
| 01/17/2007 | CN1295386C Method for growing gadolinium orthosilicate monocrystal |
| 01/11/2007 | WO2007003354A1 Crucible for the crystallization of silicon |
| 01/11/2007 | US20070006797 Lithium tantalate substrate and method for producing same |
| 01/10/2007 | EP1741808A1 InP SINGLE CRYSTAL WAFER AND InP SINGLE CRYSTAL MANUFACTURING METHOD |
| 01/09/2007 | US7160387 High purity silica crucible by electrolytic refining, and its production method and pulling method |
| 01/09/2007 | US7160386 Single crystal semiconductor manufacturing apparatus and manufacturing method, and single crystal ingot |
| 01/04/2007 | WO2007001184A1 Method for producing directionally solidified silicon ingots |
| 01/04/2007 | US20070000429 Method for producing single crystal and single crystal |
| 01/04/2007 | US20070000428 Laser irradiation apparatus |
| 01/04/2007 | US20070000427 Silicon wafer for IGBT and method for producing same |
| 01/03/2007 | EP1739209A1 Crucible for the crystallization of silicon |
| 01/03/2007 | EP1738199A1 Scintillator material based on rare earth with a reduced nuclear background |
| 01/03/2007 | EP1516078B1 Method for manipulating a rare earth chloride or bromide or iodide in a crucible comprising carbon |
| 01/03/2007 | EP1497484B1 Quartz glass crucible and method for the production thereof |
| 01/03/2007 | CN1890407A Quartz crucibles having reduced bubble content and method of making thereof |
| 01/03/2007 | CN1888126A Boron nitride pyrolyzing crucible coating method and apparatus |
| 12/28/2006 | WO2006137181A1 Apparatus for producing semiconductor single crystal |
| 12/28/2006 | WO2006137180A1 Apparatus for producing semiconductor single crystal |
| 12/28/2006 | WO2006137179A1 Method of growing silicon single crystal |
| 12/28/2006 | WO2006137178A1 Method of growing silicon single crystal and process for producing silicon wafer |
| 12/28/2006 | WO2006137174A1 Method of growing silicon single crystal and silicon single crystal grown by the method |
| 12/28/2006 | US20060292890 Method and device for the production of a silicon single crystal, silicon single crystal, and silicon semiconductor wafers with determined defect distributions |
| 12/28/2006 | US20060291519 Increasing the resistance of crystals to optical damage |
| 12/28/2006 | US20060288926 Scintillator single crystal and production method of same |
| 12/28/2006 | DE112005000300T5 Vorrichtung und Verfahren zum Herstellen von Einkristall-Halbleitern Apparatus and method for manufacturing single-crystal semiconductors |
| 12/28/2006 | DE102005028202A1 Production of silicon semiconductor wafers for fabrication of electronic components comprises controlling ratio of pulling rate to axial temperature gradient to produce agglomerated vacancy defects above critical size in single crystal |
| 12/27/2006 | EP1735843A1 Method for making polysilicon films |
| 12/27/2006 | CN1884635A Method for growing high-performance tube type sapphire back cover |
| 12/27/2006 | CN1884634A Method for growing high-performance tube type sapphire |
| 12/27/2006 | CN1292107C Growth method of neodymium-doped gadolinium gallium garnet laser crystal |
| 12/27/2006 | CN1292106C Growing method of yttrium aluminate crystal |
| 12/27/2006 | CN1292105C Sodium and ytterbium doped calcium fluoride laser crystal and growth method thereof |
| 12/27/2006 | CN1292102C Upper thermal device used for eight inch adulterated arsenic vertical gulling monocrystal manufacture |
| 12/27/2006 | CN1292101C Preparation method of large diameter zone melting silicon single crystal |
| 12/21/2006 | WO2006135832A2 Transparent ceramic composite |
| 12/21/2006 | WO2006005018A3 Process for producing a crystalline silicon ingot |
| 12/21/2006 | US20060283378 Silicone single crystal production process |
| 12/21/2006 | US20060283377 Method for producing silicon single crystals and silicon single crystal produced thereby |
| 12/21/2006 | US20060283376 Apparatus for manufacturing semiconductor single crystal |
| 12/21/2006 | US20060283375 Lithium tantalate substrate and method of manufacturing same |
| 12/21/2006 | US20060283374 Process for producing silicon semiconductor wafers with defined defect properties, and silicon semiconductor wafers having these defect properties |
| 12/21/2006 | US20060283373 Method for growing silicon single crystal |
| 12/20/2006 | EP1734157A1 Production process of silicon single crystal |
| 12/20/2006 | EP1733078A1 Single crystals and methods for fabricating same |
| 12/20/2006 | CN2848884Y Device having symmetrical thermal field central axis |
| 12/20/2006 | CN1881547A Silicon wafer for igbt and method for producing same |
| 12/20/2006 | CN1291072C Method for monocrystal growth and growth apparatus |
| 12/19/2006 | US7151007 Doped organic semiconductor materials and process for their preparation |
| 12/14/2006 | WO2006132536A1 Method and apparatus for refining a molten material |
| 12/14/2006 | US20060282229 Quality Evaluation Method for Single Crystal Ingot |
| 12/13/2006 | EP1730331A1 Cord rotating head for a crystal drawing system |
| 12/13/2006 | CN1289723C Melt upper part thermal insulating device for manufacturing six inch and eight inch phosphorus heavily-doped Czochralski silicon monocrystal |
| 12/13/2006 | CN1289722C Doping method and doping cone for manufacturing Czochralski silicon monocrystal |
| 12/13/2006 | CN1289721C Apparatus and method for melting stock supplementing grown crystal |
| 12/13/2006 | CN1289720C Silicon wafer with controlled defect distribution and making method thereof |
| 12/12/2006 | US7147910 Pyrolytic boron nitride crucible and method |
| 12/12/2006 | US7147711 Method of producing silicon wafer and silicon wafer |
| 12/12/2006 | US7147710 Method of manufacturing epitaxial silicon wafer |
| 12/07/2006 | US20060272570 Method for producing a single crystal |
| 12/07/2006 | DE102005032790A1 Non-ferrous metal e.g. liquid silicon, receiving, smelting and crystallizing container, has multifunctional coating provided on part of inner wall and including layer parts for influencing material characteristics of non-ferrous metals |
| 12/07/2006 | DE102005032789A1 Non-ferrous metals e.g. liquid silicon, melting and crystallizing container, has multifunctional coating on part of inner wall, where coating comprises two layers for interacting material properties of non-ferrous metals |
| 12/06/2006 | CN1288102C Partial-zone glass SiO2 forming article, producing method and use thereof |
| 11/30/2006 | US20060266278 Silicon wafer, method for producing silicon wafer and method for growing silicon single crystal |
| 11/30/2006 | US20060266277 Single crystal heat treatment method |
| 11/30/2006 | US20060266276 Single crystal heat treatment method |
| 11/29/2006 | EP1726034A2 Process for conveying solids particles |
| 11/29/2006 | CN1287013C Crystal seed for making monocrystalline silicon and method for making monocrystalline silicon |
| 11/29/2006 | CN1286748C Method for the production of an internally vitrified sio2 crucible |
| 11/28/2006 | US7141114 Process for producing a crystalline silicon ingot |
| 11/28/2006 | US7141113 Production method for silicon single crystal and production device for single crystal ingot, and heat treating method for silicon crystal wafer |
| 11/23/2006 | WO2006124266A2 Method and apparatus for growing single-crystal metals |
| 11/23/2006 | US20060260536 Vessel for growing a compound semiconductor single crystal, compound semiconductor single crystal, and process for fabricating the same |
| 11/23/2006 | US20060260535 Single crystal calcium fluoride for photolithography |
| 11/22/2006 | CN1865537A Process for preparing barium tungstate single crystal with improved doping concentration of rare earth ion |
| 11/22/2006 | CN1865533A Thermal-insulating cover used in Czochralski method growth of crystal with volatility at high temperature |
| 11/22/2006 | CN1285773C Method for growing chromium, yttrium and aluminium doped garnet crystal |
| 11/22/2006 | CN1285772C Continuous charging device for artificial crystal growth |
| 11/16/2006 | WO2006121785A1 Synthesis of a starting material with improved outgassing for the growth of fluoride crystals |
| 11/16/2006 | US20060254499 Method For Manufacturing Nitrogen-Doped Silicon Single Crystal |
| 11/16/2006 | US20060254498 Silicon single crystal, and process for producing it |
| 11/16/2006 | US20060254496 Phase transition method of organic based complex and its functional element |
| 11/16/2006 | DE10137857B4 Verfahren zur Herstellung eines Einkristalls A process for producing a single crystal |
| 11/15/2006 | EP1722014A1 Method for manufacturing nitrogen-doped silicon single crystal |
| 11/15/2006 | EP1370495B1 Method for producing a quartz glass crucible |
| 11/14/2006 | US7135069 comprises immersing silicon shot in an aqueous solution comprising a boric acid and polyvinyl alcohol, heating the solution so as to evaporate water and form a polymerized polyvinyl alcohol coating containing boron on the shot |
| 11/09/2006 | WO2006117939A1 Method for producing silicon wafer |
| 11/09/2006 | US20060249071 Method and apparatus for crystal growth |
| 11/08/2006 | CN1857993A Mercury telluride, cadmium telluride and indium antimonide eutectic compound and its single crystal material and thin film material |
| 11/08/2006 | CN1283853C Preparation process for lithium niobate crystal with near stoichiometric ratio |
| 11/08/2006 | CN1283852C Method for growing gadolinium orthosilicate scintillation crystal |
| 11/07/2006 | US7132091 Single crystal silicon ingot having a high arsenic concentration |