Patents for C30B 15 - Single-crystal growth by pulling from a melt, e.g. czochralski method (9,854)
06/2007
06/14/2007US20070131162 Single crystal growing apparatus
06/14/2007US20070131158 Method for manufacturing single crystal semiconductor
06/14/2007DE102004017142B4 Lithiumtantalat-Substrat und Verfahren zu seiner Herstellung Lithium tantalate substrate and process for its preparation
06/13/2007EP1794254A2 Photonic crystal, conjugated polymers suitable for photonic crystals, and a method for synthesizing conjugated polymers
06/13/2007EP1497484B8 Quartz glass crucible and method for the production thereof
06/12/2007US7229693 Low defect density, ideal oxygen precipitating silicon
06/12/2007US7229496 Process for producing silicon single crystal layer and silicon single crystal layer
06/12/2007US7229495 Silicon wafer and method for producing silicon single crystal
06/12/2007US7229494 Production method for compound semiconductor single crystal
06/12/2007US7228658 Method of attaching an end seal to manufactured seeds
06/07/2007WO2007063996A1 Quartz glass crucible, process for producing the same, and use
06/07/2007US20070128099 Silicon feedstock for solar cells
06/06/2007CN1974888A Zr dopped lithium niobate crystal
06/06/2007CN1320173C Process for producing single crystal of compound semiconductor and crystal growing apparatus
06/06/2007CN1320172C Super-conductive magnet device for crystal pulling device
06/05/2007US7226571 High resistivity silicon wafer and method for fabricating the same
06/05/2007US7226508 Quartz glass crucible and method for the production thereof
06/05/2007US7226507 Method for producing single crystal and single crystal
06/05/2007US7226506 Single crystal silicon producing method, single crystal silicon wafer producing method, seed crystal for producing single crystal silicon, single crystal silicon ingot, and single crystal silicon wafer
06/05/2007US7226505 Method for vanishing defects in single crystal silicon and single crystal silicon
05/2007
05/31/2007US20070119365 Silicon single crystal pulling method
05/31/2007DE102006050901A1 Production of semiconductor body, e.g. for photovoltaic cell, by directionally recrystallizing portion of source melt to form intermediate crystal, disposing of residue portion, melting portion of intermediate crystal, and crystallizing
05/30/2007EP1789823A1 Radiotransparent component and method for the production thereof
05/30/2007CN2905829Y Multiple waveform rotating control device needed by monocrystal preparation
05/30/2007CN1318662C CdTe single crystal and CdTe polycrystal, and method for preparation thereof
05/30/2007CN1318660C Neodymium-doped lanthanum vanadate (LaVO4) laser crystal and its preparation method
05/30/2007CN1318659C Neodymium-doped strontium-lanthanum borate ( Sr3La(BO3)3 ) laser crystal and its preparation method
05/30/2007CN1318658C Neodymium-doped strontium-yttrium borate ( Sr3Y(BO3)3 ) laser crystal and its preparation method
05/30/2007CN1318657C Neodymium-doped gadolinium-strontium-scandium borate laser crystal and its preparation method
05/30/2007CN1318654C Silicon monocrystal and its producing method
05/29/2007US7223304 Controlling melt-solid interface shape of a growing silicon crystal using a variable magnetic field
05/29/2007US7223303 Silicon cleaning method for semiconductor materials and polycrystalline silicon chunk
05/24/2007US20070117414 Methods and apparatus for epitaxial film formation
05/24/2007US20070113778 Epitaxial silicon wafer
05/23/2007EP1257697B1 Process for producing a silicon melt
05/23/2007CN1966781A Neodymium-doped sodium-yttrium molybdenate laser crystal and its preparation method and use
05/23/2007CN1966780A Neodymium-doped sodium-yttrium molybdenate laser crystal and its preparation method and use
05/23/2007CN1317429C Process for mfg. silicon single crystal having doped high volatile foreign impurity
05/22/2007US7220308 Manufacturing method of high resistivity silicon single crystal
05/18/2007WO2005084225A3 System for continuous growing of monocrystalline silicon
05/17/2007US20070111151 Surface modified quartz glass crucible and its modification process
05/16/2007EP1785511A1 Silicon wafer, process for producing the same and method of growing silicon single crystal
05/16/2007CN2900558Y Straight drawing type crystal growing furnace based on temperature predicating compensation
05/16/2007CN1965415A Method for making polysilicon films
05/16/2007CN1316075C Monocrystal mfg process
05/16/2007CN1316074C Evaluation technology of reactivity of quartz glass and fused silicon and vibration of fused silicon surface
05/16/2007CN1316073C Quartz glass crucible and method for the production thereof
05/16/2007CN1316072C Low defect density, ideal oxygen precipitating silicon
05/16/2007CN1315748C Surface modifying method for quartz glass crucible and surface modified crucible
05/15/2007US7217320 Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults
05/10/2007US20070101927 Silicon based optical waveguide structures and methods of manufacture
05/10/2007US20070101926 Method of manufacturing silicon single crystal, silicon single crystal and silicon wafer
05/09/2007EP1781843A1 Partially devitrified crucible
05/09/2007CN1958881A Boratory laser crystal Li6R(1-x)REx(B03)3 and preparation method, and application
05/09/2007CN1958875A Equipment and method for drawing single article of semiconductor
05/09/2007CN1314842C Intermittent feeding technique for increasing the melting rate of polycrystalline silicon
05/09/2007CN1314841C Device and method for supplementing melt growth crystal by crucible lifting method
05/08/2007US7214268 Method of producing P-doped silicon single crystal and P-doped N-type silicon single crystal wafer
05/08/2007US7214267 Silicon single crystal and method for growing silicon single crystal
05/03/2007US20070095277 Heat exchange having adsorbing core for use in refrigerating system
05/03/2007US20070095275 Method for manufacturing silicon single crystal
05/03/2007US20070095274 Silicon wafer and method for producing same
05/03/2007US20070095273 Method for producing crystal of fluoride
05/02/2007EP1780314A2 Method for manufacturing silicon single crystal
05/02/2007EP1226291A4 Growth of bulk single crystals of aluminum
05/02/2007CN1313652C Production method for compound semiconductor single crystal
05/02/2007CN1313651C Epitaxial silicon wafers substantially free of grown-in defects
05/02/2007CN1313407C Fused quartz article having controlled devitrification
05/02/2007CN1313399C Method of producing a quartz glass crucible
05/01/2007US7211142 CdTe single crystal and CdTe polycrystal, and method for preparation thereof
05/01/2007US7211141 Method for producing a wafer
04/2007
04/26/2007WO2007047783A1 Quartz glass crucible and method for treating surface of quartz glass crucible
04/26/2007WO2007046287A1 Apparatus and process for manufacturing semiconductor single crystal
04/26/2007US20070089666 Silicon semiconductor substrate and production method thereof
04/25/2007CN1312327C Silicon wafer for epitaxial growth, epitaxial wafer, and its manufacturing method
04/24/2007US7208043 Silicon semiconductor substrate and preparation thereof
04/24/2007US7208042 Method of manufacturing silicon single crystal and silicon single crystal manufactured by the method
04/19/2007US20070084400 Quartz glass crucible and method for treating surface of quartz glass crucible
04/19/2007US20070084397 Quartz glass crucible and method for treating surface of quartz glass crucible
04/18/2007EP1774069A1 Apparatus for growing single crystals from melt
04/18/2007EP1774068A1 Method of growing single crystals from melt
04/18/2007CN2890098Y CZ-Si single crystal furnace with post oxidation device
04/18/2007CN2890097Y Gate valve parts in crystal growing furnace
04/18/2007CN2890096Y Transition cabinet parts in crystal growing furnace
04/18/2007CN1311106C Method for manipulating a rare earth chloride or bromide or iodide in a crucible comprising carbon
04/17/2007US7204881 Silicon wafer for epitaxial growth, an epitaxial wafer, and a method for producing it
04/12/2007WO2007040081A1 Single-crystal semiconductor fabrication device and fabrication method
04/12/2007WO2007040002A1 Method for producing semiconductor wafer and system for determining cutting position of semiconductor ingot
04/12/2007WO2007039390A1 Partially or entirely vitrified amorphous molded sio2 article crystallizing in the vitrified area at elevated temperatures, method for the production thereof, and use
04/12/2007US20070079749 Method and apparatus for producing spherical silicon single-crystal
04/11/2007EP1437327B1 Method for producing silicon
04/11/2007CN1946882A Single crystals and methods for fabricating same
04/11/2007CN1946881A Crucible for the crystallization of silicon
04/11/2007CN1310257C Magnetic material with bidirectional shape memory effect and single-crystal producing method thereof
04/11/2007CN1309879C Vessel for holding silicon and method of producing the same
04/10/2007US7201801 Heater for manufacturing a crystal
04/10/2007US7201800 Process for making silicon wafers with stabilized oxygen precipitate nucleation centers
04/10/2007CA2188300C Non-linear crystals and uses thereof
04/05/2007WO2007037052A1 Single crystal silicon pulling apparatus, method for preventing contamination of silicon melt, and apparatus for preventing contamination of silicon melt
04/05/2007US20070074654 Evaporation source machine and vaccum deposition apparatus using the same
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