| Patents for C30B 15 - Single-crystal growth by pulling from a melt, e.g. czochralski method (9,854) |
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| 04/05/2007 | US20070074653 Apparatus for preparation of silicon crystals with reduced metal content |
| 04/05/2007 | DE102005047112A1 An amorphous silicon dioxide form body is partly or wholly glazed and infiltrated during melt phase with Barium, Aluminum or Boron compounds |
| 04/04/2007 | EP1768927A2 Systems and methods for manufacturing granular material, and for measuring and reducing dust in granular material |
| 04/04/2007 | CN1942783A Scintillator material based on rare earth with a reduced nuclear background |
| 04/04/2007 | CN1940150A Method of manufacturing silicon wafer |
| 04/04/2007 | CN1308501C Laser seed crystal centering method for top seed crystal process of growing crystal |
| 04/04/2007 | CN1308500C Crucible setting method for growing crystal by lifting method |
| 04/04/2007 | CN1308499C Process for preparing titanium doped lithium aluminate wafer |
| 04/03/2007 | US7198738 Can be used as high-performance wavelength converting crystal; optical parametric oscillator |
| 03/29/2007 | US20070068450 Novel nitrogen semiconductor compound and device fabricated using the same |
| 03/29/2007 | US20070068448 Single crystal semiconductor manufacturing apparatus and manufacturing method, and single crystal ingot |
| 03/29/2007 | US20070068447 Method of manufacturing silicon wafer |
| 03/29/2007 | US20070068446 Compound semiconductor single crystal and production process thereof |
| 03/29/2007 | DE102005041591B4 Sicherheitseinrichtung und Verfahren zum Auslösen einer Notabschaltung einer Kristallzüchtungsanlage Security device and method for triggering an emergency shutdown of a crystal growing equipment |
| 03/28/2007 | CN1936113A Low defect density, ideal oxygen precipitating silicon |
| 03/28/2007 | CN1936112A 低缺陷浓度的硅 A low defect density silicon |
| 03/28/2007 | CN1936108A Apparatus for growing high quality silicon single crystal ingot and growing method using the same |
| 03/28/2007 | CN1936107A Lead tungstate crystal growthfurnace with observation and exhuast device |
| 03/27/2007 | US7195671 Thermal shield |
| 03/27/2007 | US7195669 Method of producing silicon monocrystal |
| 03/27/2007 | US7195668 Crucible for the growth of silicon single crystal and process for the growth thereof |
| 03/22/2007 | WO2007032799A1 Method and apparatus to produce single crystal ingot of uniform axial resistivity |
| 03/22/2007 | US20070062442 Apparatus for growing high quality silicon single crystal ingot and growing method using the same |
| 03/22/2007 | DE19710856B4 Hebezeug für eine Vorrichtung zum Ziehen von Einkristallen Hoist for an apparatus for growing single crystals |
| 03/21/2007 | CN1932085A Production process of silicon single crystal |
| 03/21/2007 | CN1306074C Crucible lowering growth technology of Teo2 monocrystal |
| 03/20/2007 | US7192480 fabricating lithium niobate-ion exchange waveguides using a pressurized oxygen atmosphere anneal process to further diffuse ions in the exchange region |
| 03/15/2007 | WO2006135832A3 Transparent ceramic composite |
| 03/15/2007 | US20070056508 Apparatus for producing fluoride crystal |
| 03/15/2007 | US20070056505 Method and apparatus for making a highly uniform low-stress single crystal by drawing from a melt and uses of said crystal |
| 03/15/2007 | US20070056504 Method and apparatus to produce single crystal ingot of uniform axial resistivity |
| 03/15/2007 | DE102005043623A1 Herstellung hochhomogener spannungsarmer Einkristalle durch Ziehen, eine Vorrichtung hierfür sowie die Verwendung solcher Kristalle Production of highly homogeneous low-stress single crystals by drawing, an apparatus therefor and the use of such crystals |
| 03/15/2007 | DE102005043398A1 Manufacturing a titanium sapphire laser crystal using a mixture of carbon monoxide and an inert gas |
| 03/14/2007 | EP1762643A2 Method and apparatus to obtain homogene and low-strained crystals by pulling |
| 03/14/2007 | EP1762549A1 Silica glass crucible with bubble-free inner wall and reduced bubble growth wall |
| 03/14/2007 | CN1304647C Silicon single crystal wafer and epitaxial wafer, and method for producing silicon single crystal |
| 03/13/2007 | US7190649 Bit-wise optical data storage utilizing aluminum oxide single crystal medium |
| 03/08/2007 | US20070051303 Semiconductor single crystal manufacturing apparatus |
| 03/08/2007 | US20070051298 Method of searching for and generating high free energy forms |
| 03/08/2007 | US20070051297 Silica glass crucible with barium-doped inner wall |
| 03/08/2007 | US20070051296 Silica glass crucible with bubble-free and reduced bubble growth wall |
| 03/08/2007 | DE19737581B4 Verfahren zum (Aus)Ziehen eines Einkristalls Method for (off) pulling a single crystal |
| 03/08/2007 | DE102005040229A1 Unterstützungsvorrichtung zur Unterstützung eines wachsenden Einkristalls aus Halbleitermaterial und Verfahren zur Herstellung eines Einkristalls Support apparatus for supporting a growing single crystal of semiconductor material and method for producing a single crystal |
| 03/07/2007 | EP1372837B1 Application of stabilized zirconium oxide single crystal for observation window |
| 03/01/2007 | US20070044711 Supporting apparatus for supporting a growing single crystal of semiconductor material, and process for producing a single crystal |
| 03/01/2007 | US20070044709 Silicon Wafer Surface Defect Evaluation Method |
| 03/01/2007 | US20070044708 Ultrasonic sensor assembly and method |
| 02/28/2007 | EP1756337A2 A melter assembly and method for charging a crystal forming apparatus with molten source material |
| 02/28/2007 | CN1920118A Supporting apparatus for supporting a growing single crystal of semiconductor material, and process for producing a single crystal |
| 02/28/2007 | CN1302158C Mould parts of silicon nitride and method for producing such mould parts |
| 02/28/2007 | CN1302157C Quartz glass crucible for pulling up silicon single crystal and method for producing the same |
| 02/27/2007 | US7182809 Nitrogen-doped silicon substantially free of oxidation induced stacking faults |
| 02/22/2007 | WO2007020744A1 Control system and method for time variant system control object having idle time such as single crystal producing device by czochralski method |
| 02/21/2007 | CN1916244A Laser crystal of lithium lanthanum molybdate with neodymium being doped, preparation method and usage |
| 02/21/2007 | CN1916243A Self-double frequency laser crystal of calcium gadolinium vanadic acid with rare earth ions being doped, and preparation method |
| 02/21/2007 | CN1916242A Laser crystal of calcium gadolinium boric acid with erbium ytterbium dual being doped, preparation method and application |
| 02/20/2007 | US7179331 Crystal growing equipment |
| 02/20/2007 | US7179330 Method of manufacturing silicon single crystal, silicon single crystal and silicon wafer |
| 02/20/2007 | US7178366 Method for the production of an internally vitrified SiO2 crucible |
| 02/15/2007 | US20070034251 Semiconductor elements having zones of reduced oxygen |
| 02/15/2007 | US20070034138 Method for growing silicon single crystal and silicon wafer |
| 02/14/2007 | EP1372805A4 Efg crystal growth apparatus and method |
| 02/14/2007 | CN1301050C Energy Pathway Arrangement |
| 02/13/2007 | US7175705 Process for producing compound semiconductor single crystal |
| 02/08/2007 | WO2006027778A3 Core-alloyed shell semiconductor nanocrystals |
| 02/08/2007 | US20070028833 Method for producing silicon single crystal and silicon single crystal |
| 02/08/2007 | US20070028832 Manufacturing method of hydrogen-doped silicon single crystal |
| 02/08/2007 | DE112005000397T5 Verfahren zum Herstellen von Einkristall-Halbleitern A method for manufacturing single-crystal semiconductors |
| 02/08/2007 | DE112005000350T5 Verfahren zum Herstellen eines Einkristall-Halbleiters A method for producing a single crystal semiconductor |
| 02/08/2007 | DE102005036746A1 SiO2-Formkörper aus zwei Schichten, Verfahren zu ihrer Herstellung und Verwendung SiO2-shaped body composed of two layers, processes for their preparation and use |
| 02/07/2007 | EP1749123A2 System for continuous growing of monocrystalline silicon |
| 02/07/2007 | CN1908249A A silicon single crystal ingot and wafer, growing apparatus and method thereof |
| 02/07/2007 | CN1907915A Method for manufacture thermal field charcoal/charcoal draft tube for single crystal silicon pulling furnace |
| 02/07/2007 | CN1907914A Method for manufacture thermal field charcoal/charcoal crucible for single crystal silicon pulling furnace |
| 02/07/2007 | CN1298896C Er3+, Yb3+, Ce3+ codoped CaF2 laser crystal and its growth method |
| 02/07/2007 | CN1298895C Up-conversion laser crystal Er3+, Yb3+, Na+:CaF2 |
| 02/06/2007 | US7172656 Device and method for measuring position of liquid surface or melt in single-crystal-growing apparatus |
| 02/06/2007 | US7172654 Preparation of compounds based on phase equilibria of Cu-In-Se |
| 02/01/2007 | US20070023979 Method for the production of semiconductor granules |
| 02/01/2007 | US20070022943 A Silicon Single Crystal Ingot and Wafer, Growing Apparatus and Method Therof |
| 02/01/2007 | US20070022942 Method and apparatus for growing high quality silicon single crystal, silicon single crystal ingot grown thereby and wafer produced from the same single crystal ingot |
| 02/01/2007 | US20070022941 Method of forming a layer and method of manufacturing a semiconductor device using the same |
| 01/31/2007 | CN1906322A Device for depositing a polycrystalline silicon layer on a support |
| 01/31/2007 | CN1904147A Method and apparatus for growing high quality silicon single crystal, silicon single crystal and silicon wafer |
| 01/25/2007 | US20070017436 Process for growing silicon single crystal and process for producing silicon wafer |
| 01/25/2007 | US20070017435 Mechanism for controlling melt level in single crystal pulling apparatus, method for controlling melt level in single crystal pulling apparatus, mechanism for adjusting melt level in single crystal pulling apparatus and method for adjusting melt level while pulling single crystal |
| 01/25/2007 | US20070017434 Process for producing silicon single crystal |
| 01/25/2007 | US20070017433 Process for producing single crystal and single crystal |
| 01/24/2007 | EP1746186A1 Silicon single crystal manufacturing method and silicon single crystal |
| 01/24/2007 | EP1745164A1 Crucible for the crystallization of silicon |
| 01/24/2007 | CN1902341A Scintillation substances (variants) |
| 01/24/2007 | CN1902130A New material and method of fabrication therefor |
| 01/24/2007 | CN1902129A Silicon feedstock for solar cells |
| 01/24/2007 | CN1296529C Single crystal silicon wafer and single crystal silicon production method |
| 01/24/2007 | CN1296526C Annealed low defect density single crystal silicon |
| 01/24/2007 | CN1296525C Process for preparing defect free silicon crystal which allows for variability in process conditions |
| 01/18/2007 | WO2007007479A1 Process for producing single crystal |
| 01/18/2007 | WO2007007456A1 Process for producing single crystal |
| 01/18/2007 | US20070012243 Crucible or related object holder and method of manufacture |
| 01/18/2007 | US20070012239 Production of a GaN bulk crystal substrate and a semiconductor device formed thereon |