Patents for C30B 15 - Single-crystal growth by pulling from a melt, e.g. czochralski method (9,854)
08/2008
08/13/2008CN101240444A Method and device for manufacturing silica semiconductor wafer
08/13/2008CN100410426C Single-crystal silicon ingot and wafer having homogeneous vacancy defects, and method and apparatus for making same
08/12/2008US7410540 Process for the manufacture of doped semiconductor single crystals, and III-V semiconductor single crystal
08/07/2008US20080184928 Method for Producing Single Crystal and a Method for Producing Annealed Wafer
08/06/2008CN101235544A Growth of Nd3+:KLa(WO4)2 crystal by crystal pulling method
08/06/2008CN101235543A Self-activation laser crystal ytterbium calcium vanadate and preparation method thereof
08/05/2008US7407866 Soi wafer and a method for producing the same
08/05/2008US7407550 Method and apparatus for crystal growth
07/2008
07/31/2008DE10052411B4 Wärmebehandlungsverfahren eines Siliciumwafers und der wärmebehandelte Siliciumwafer Heat treatment method of a silicon wafer and the heat-treated silicon wafer
07/30/2008CN101230485A Growing method for aluminized optical crystal removing ultraviolet absorption
07/30/2008CN101230482A Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults
07/29/2008US7404856 Nitrogen-doped silicon substantially free of oxidation induced stacking faults
07/24/2008WO2008087949A1 Solid raw material supply device, molten raw material supply device, and crystal production apparatus
07/24/2008DE19939715B4 Auf einer Ziehwelle einer Kristallziehanlage angeordneter Greifer Arranged on a pulling shaft of a crystal puller claw
07/23/2008EP1945836A2 Methods and apparatus for epitaxial film formation
07/23/2008EP1945586A1 Quartz glass crucible and method for treating surface of quartz glass crucible
07/23/2008CN201089805Y Crucible for preparing vertical pulling silicon monocrystal
07/23/2008CN201089804Y Crucible for preparing vertical pulling silicon monocrystal
07/23/2008CN201089803Y Charge pipe for elemental crystal furnace
07/23/2008CN101225545A Method for preparing near-stoichiometric lithium tantalate crystals
07/23/2008CN101225541A Method of manufacturing semiconductor single crystal by czochralski technology, and single crystal ingot and wafer using the same
07/23/2008CN100405618C Laminous element and its producing method
07/16/2008CN101222114A Ytterbium doped positive calcium niobate laser crystal and growth method thereof
07/16/2008CN101220511A Method for manufacturing bismuth sodium titanate-barium titanate ferro-electricity single crystal
07/16/2008CN101220507A Method for manufacturing silicon crystal plate for solar battery
07/16/2008CN101220503A Integration type programmable crystal growth control system
07/10/2008DE102007001348A1 Crystalline mold production from melted mass in Czochralski arrangements, involves manipulating drawing velocity and heat flow by use of liquid or solid phase interface, where arrangement is carried out in two control loops
07/10/2008DE10040970B4 Wärmeschutzvorrichtung und Kristallziehgerät unter Einsatz derselben Thermal protector and crystal puller using the same
07/09/2008CN100400471C Method for manufacture thermal field charcoal/charcoal draft tube for single crystal silicon pulling furnace
07/08/2008US7396406 Single crystal semiconductor manufacturing apparatus and method
07/08/2008US7396405 Single crystal, single crystal wafer, epitaxial wafer, and method of growing single crystal
07/03/2008WO2008054415A3 Method for synthesizing ultrahigh-purity silicon carbide
07/03/2008DE112005000715T5 Halbleitereinkristall-Herstellungsvorrichtung und Graphittiegel Semiconductor single crystal manufacturing apparatus and graphite crucible
07/02/2008EP1939332A1 Semiconductor crystal, and method and apparatus of production
07/02/2008CN101213328A Crucible for the crystallization of silicon
07/02/2008CN101212123A Ytterbium doped yttrium lanthanum calcium oxoborate laser crystal, producing method, and purpose
07/02/2008CN101212122A Ytterbium doped gadolinium lanthanum calcium oxoborate laser crystal, producing method, and purpose
07/02/2008CN101212121A Ytterbium doped kalium-lanthanum molybdate laser crystal, producing method, and purpose
07/02/2008CN101212120A Neodymium doped strontium barium niobate laser crystal, producing method, and purpose
07/02/2008CN101212119A Chromium doped aluminum-cesium molybdate tunable laser crystal
07/02/2008CN100398703C Method for growing high-performance tube type sapphire
07/02/2008CN100398702C Thermal-insulating cover used in Czochralski method growth of crystal with volatility at high temperature
07/01/2008US7394129 SOI wafer and method for producing it
06/2008
06/26/2008WO2008076730A1 Directional crystallization of silicon sheets using rapid thermal processing
06/26/2008US20080153259 Soi wafer and method for producing it
06/26/2008US20080151954 Nd:YV04 laser crystal and method of growth and use thereof
06/26/2008DE19717380B4 Verfahren zur Anbringung eines Schmelztiegels auf einer Halterung einer Einkristall-Ziehvorrichtung, sowie dabei verwendete Vorrichtung zum Zusammenfügen der Halterung und dabei verwendete Halterung A method of mounting a crucible on a support of a single crystal pulling apparatus, and thereby apparatus used for assembling the bracket and bracket used therein
06/26/2008DE112006002130T5 Steuersystem und Verfahren für ein gesteuertes Objekt in einem zeitvarianten System mit Totzeit, beispielsweise eine Einkristall-Produktionsvorrichtung durch das Czochralski-Verfahren A control system and method for a controlled object in a time-variant system with dead time, such as a single crystal production apparatus by the Czochralski method
06/26/2008DE102006062117A1 Verfahren zum Herstellen kristallisierten Siliciums sowie kristallisiertes Silicium A method for producing crystallized silicon and crystalline silicon
06/26/2008DE102006060561A1 Quarzglasformkörper und Verfahren und Vorrichtung zu dessen Herstellung Quartz glass molded body and method and apparatus for its production
06/26/2008DE102006060359A1 Verfahren und Vorrichtung zur Herstellung von Halbleiterscheiben aus Silicium Method and apparatus for manufacture of semiconductor wafers of silicon
06/25/2008EP1936012A2 Method for manufacturing crystallised silicon and crystallised silicon
06/25/2008CN100396827C Method for growing tantalic acid lithium in diameter of 5-inch single crystal
06/24/2008US7390361 Semiconductor single crystal manufacturing apparatus and graphite crucible
06/19/2008US20080141929 Crucible having a doped upper wall portion and method for making the same
06/19/2008DE19654248B4 Einkristall-Ziehvorrichtung Single crystal pulling apparatus
06/19/2008DE10259588B4 Verfahren und Vorrichtung zur Herstellung eines Einkristalls aus Silicium Method and apparatus for producing a single crystal of silicon
06/18/2008CN101203634A Method for growing silicon single crystal
06/18/2008CN100395380C Process for preparing barium tungstate single crystal with improved doping concentration of rare earth ion
06/17/2008US7387676 Process for producing silicon semiconductor wafers with defined defect properties, and silicon semiconductor wafers having these defect properties
06/12/2008WO2008070458A1 System and method of forming a crystal
06/12/2008WO2008067700A1 Dislocation-free silicon monocrystal, its preparation method and a graphite heating device used
06/12/2008US20080134964 System and Method of Forming a Crystal
06/12/2008US20080134958 System For Continuous Growing of Monocrystalline Silicon
06/12/2008CA2671483A1 System and method of forming a crystal
06/11/2008EP1930484A1 Process for producing single crystal
06/11/2008EP1745164B1 Crucible for the crystallization of silicon
06/11/2008CN101198727A Method for growing silicon single crystal and method for manufacturing silicon wafer
06/10/2008US7384477 Method for producing a single crystal and a single crystal
06/05/2008US20080127886 Heat Shield Member and Single Crystal Pulling Device
06/04/2008CN101194141A 透明陶瓷复合物 Transparent ceramic composites
06/04/2008CN101194051A Method and apparatus for refining a molten material
06/04/2008CN101191839A Method and system stably for gain of radiation detector photomultipiler
06/03/2008US7381392 For producing directionally solidified Czochralski, float zone or multicrystalline silicon ingots, thin sheets and ribbons for the production of silicon wafers containing: 0.3 to 5.0 ppma boron, 0.1 to 10 ppma phosphorus, less than 150 ppma metallic elements and less than 100 ppma carbon
06/03/2008CA2476840C Method of attaching an end seal to manufactured seeds
05/2008
05/29/2008US20080121817 LuAP Scintillator
05/28/2008EP1926134A1 Method for manufacturing silicon epitaxial wafers
05/28/2008CN101187064A Cr5+: RVO4 crystal, preparation method and laser passive Q-Switched Device
05/28/2008CN101187056A Production of p-doped epitaxial coated silicon semiconductor wafers dopes a single crystal with boron and hydrogen and a controlled nitrogen concentration
05/27/2008US7378128 applying release coatings comprising silica, silicon nitride, silicon dioxide and silicon multilayers on the surfaces of containers, used for handling of melts that are solidified and removed as ingots
05/27/2008US7378071 Silicon wafer and method for producing silicon single crystal
05/22/2008US20080115720 Apparatus and method for manufacturing semiconductor single crystal
05/21/2008EP1922437A1 Method and apparatus for refining a molten material
05/21/2008EP1098016B1 Single-crystal pulling apparatus
05/21/2008DE112006001092T5 Herstellungsverfahren für Siliciumwafer Manufacturing method for silicon wafers
05/20/2008US7374741 Method for growing silicon single crystal and silicon wafer
05/20/2008US7374614 Method for manufacturing single crystal semiconductor
05/15/2008US20080113171 Silicon Wafer For Semiconductor And Manufacturing Method Thereof
05/15/2008DE102007049778A1 Verfahren zum Herstellen eines Halbleitereinkristalls durch das Czochralski-Verfahren sowie Einkristallrohling und Wafer, die unter Verwendung derselben hergestellt werden A method for manufacturing a semiconductor single crystal by the Czochralski method, as well as single crystal ingot and wafers, which are prepared using the same
05/14/2008CN201058893Y Device for growing gallium-doped silicon monocrystal by czochralski method
05/14/2008CN100387936C Method for reducing sensitivity of crystals to damage effect of light intensity exposure
05/13/2008CA2492176C Mould parts of silicon nitride and method for producing such mould parts
05/08/2008WO2008055067A2 Method and apparatus for forming a silicon wafer
05/08/2008WO2008054415A2 Method for synthesizing ultrahigh-purity silicon carbide
05/08/2008US20080107582 Method for manufacturing semiconductor single crystal by Czochralski technology, and single crystal ingot and wafer manufactured using the same
05/08/2008US20080105193 Method and Apparatus for Crystal Growth
05/08/2008DE19781966B4 Single crystal pulling apparatus - includes puller to from stepped locked portion of crystal
05/08/2008CA2661324A1 Method and apparatus for forming a silicon wafer
05/07/2008CN101175874A Apparatus for manufacturing semiconductor single crystal
05/07/2008CN101175873A Apparatus for manufacturing semiconductor single crystal
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