| Patents for C30B 15 - Single-crystal growth by pulling from a melt, e.g. czochralski method (9,854) |
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| 02/11/2009 | CN100460572C Sensor built-out type crystal lifting device |
| 02/11/2009 | CN100460571C Linear guide rail type crucible lifting device |
| 02/05/2009 | WO2009018145A1 Wafer/ribbon crystal method and apparatus |
| 02/05/2009 | WO2009017071A1 Method for manufacturing quartz glass crucible |
| 02/05/2009 | WO2009017068A1 Process for producing quartz glass crucible and apparatus for producing the quartz glass crucible |
| 02/05/2009 | WO2009016911A1 Semiconductor single crystal manufacturing apparatus |
| 02/05/2009 | US20090031945 Single crystal and semiconductor wafer and apparatus and method for producing a single crystal |
| 02/05/2009 | DE102007036944A1 Method for contact less stirring of semiconductor- and metallic melts in heated containers, comprises reducing temperature variations turbulently present in the melt through flow drive effect of a rotating magnetic field |
| 02/05/2009 | CA2689519A1 Wafer/ribbon crystal method and apparatus |
| 02/04/2009 | CN100457613C Silicon feedstock for solar cells |
| 01/28/2009 | CN101356130A Quartz glass crucible and method for treating surface of quartz glass crucible |
| 01/27/2009 | US7482552 Laser crystallizing device and method for crystallizing silicon |
| 01/22/2009 | US20090022930 Single crystal silicon having improved gate oxide integrity |
| 01/21/2009 | EP1087040B1 Method for producing silicon single crystal |
| 01/21/2009 | CN201183845Y Seed crystal chucking appliance |
| 01/15/2009 | DE10022333B4 CVD-Verfahren zu Herstellung eines siliciumcarbidbeschichteten Graphitwerkstoff und Verwendung eines siliciumcarbidbeschichteten Graphitwerkstoffs CVD process for producing a siliciumcarbidbeschichteten graphite material and using a siliciumcarbidbeschichteten graphite material |
| 01/14/2009 | CN101343775A Capacity increasing charging device for quartz crucible of monocrystalline silicon manufacturing stove |
| 01/13/2009 | US7476274 Method and apparatus for making a highly uniform low-stress single crystal by drawing from a melt and uses of said crystal |
| 01/08/2009 | US20090007840 Apparatus and Method for Growing a Crystal and Heating an Annular Channel Circumscribing the Crystal |
| 01/08/2009 | US20090007839 Method for Manufacturing Silicon Single Crystal Wafer |
| 01/07/2009 | EP2011905A1 Method for measuring distance between reference reflector and melt surface, method for control the position of melt surface using same, and silicon single crystal producing apparatus |
| 01/07/2009 | EP1087041B1 Production method for silicon wafer and silicon wafer |
| 01/07/2009 | CN201176468Y Rotary positioning apparatus of seed crystal tray |
| 01/07/2009 | CN101338453A Growth device of large size non-core YAG series laser crystal and growth process thereof |
| 01/07/2009 | CN101338450A Process for prolonging service life of main heating element and decrease deadweight thereof in Czochralski crystal grower |
| 01/07/2009 | CN101338449A Nitrogen-silicon congruent melting alloy, method for manufacturing same and use |
| 01/06/2009 | US7473314 Method for growing silicon single crystal |
| 01/02/2009 | DE112006003772T5 Positionsmessverfahren Position measurement method |
| 01/01/2009 | US20090000535 Method For Manufacturing Silicon Single Crystal Wafer |
| 12/31/2008 | CN101333687A Gradient type temperature field heating element |
| 12/31/2008 | CN101333683A Novel infrared non-linear crystal CsV2O5 |
| 12/31/2008 | CN101333676A Bearing ball at end of tungsten wire rope and forming process |
| 12/30/2008 | US7470323 Process for producing p-doped and epitaxially coated semiconductor wafers from silicon |
| 12/24/2008 | WO2008157313A1 Ribbon crystal pulling furnace afterheater with at least one opening |
| 12/24/2008 | WO2008155138A2 Device for producing crystals from electroconductive melts |
| 12/24/2008 | WO2008155137A1 Device and method for producing crystals from electroconductive melts |
| 12/24/2008 | DE102007028548A1 Vorrichtung und Verfahren zur Herstellung von Kristallen aus elektrisch leitenden Schmelzen Apparatus and method for producing crystals of electrically conductive melting |
| 12/24/2008 | DE102007028547A1 Vorrichtung zur Herstellung von Kristallen aus elektrisch leitenden Schmelzen An apparatus for producing crystals of electrically conductive melting |
| 12/24/2008 | CN101328614A Yb and Er double doping plumbous tungstate crystal conversion material and preparation thereof |
| 12/24/2008 | CN101328613A Photon avalanches mechanism Zn and Er double doping lithium niobate crystal conversion material and preparation thereof |
| 12/24/2008 | CN101328612A In, Fe and Cu three-doping lithium niobate crystal and preparation thereof |
| 12/24/2008 | CA2701825A1 Ribbon crystal pulling furnace afterheater with at least one opening |
| 12/18/2008 | WO2008154654A1 Removable thermal control for ribbon crystal pulling furnaces |
| 12/18/2008 | US20080311021 Apparatus for pulling single crystal by CZ method |
| 12/18/2008 | US20080311019 Apparatus for pulling single crystal by CZ method |
| 12/18/2008 | US20080308035 Removable Thermal Control for Ribbon Crystal Pulling Furnaces |
| 12/18/2008 | US20080308034 Ribbon Crystal Pulling Furnace Afterheater with at Least One Opening |
| 12/18/2008 | CA2701822A1 Removable thermal control for ribbon crystal pulling furnaces |
| 12/17/2008 | CN101323985A Tubular screens for large size high melting point crystal growth |
| 12/17/2008 | CN101323984A Heating device for large size high melting point crystal growth and method for making the same |
| 12/16/2008 | US7465351 Melter assembly and method for charging a crystal forming apparatus with molten source material |
| 12/11/2008 | WO2008150761A1 Method and apparatus for growing a ribbon crystal with localized cooling |
| 12/11/2008 | WO2008149781A1 Quartz glass crucible for silicon single crystal pulling operation and process for manufacturing the same |
| 12/11/2008 | WO2008149687A1 Doping apparatus and method for manufacturing silicon single crystal |
| 12/11/2008 | WO2008149686A1 Dopant implanting method and doping apparatus |
| 12/11/2008 | US20080302296 Method and Apparatus for Growing a Ribbon Crystal with Localized Cooling |
| 12/11/2008 | US20080302295 Method of Evaluating Quality of Silicon Single Crystal |
| 12/11/2008 | US20080302294 Single Crystal Manufacturing Method |
| 12/11/2008 | CA2689143A1 Method and apparatus for growing a ribbon crystal with localized cooling |
| 12/10/2008 | EP1689916B1 Scintillation substances (variants) |
| 12/10/2008 | CN201162061Y Crystal growing furnace guide shell |
| 12/10/2008 | CN201162060Y Thermal field structure for vertical pulling silicon monocrystal growth |
| 12/10/2008 | CN101320780A 发光元件 Light-emitting element |
| 12/10/2008 | CN101319398A Large scale ytterbium doped scandium silicate laser crystal and method of producing the same |
| 12/10/2008 | CN101319395A Neodymium doped lanthanum yttrium vanadate laser crystal and preparation method and application thereof |
| 12/10/2008 | CN101319394A Nonlinear optical crystal lanthanum calcium vanadate and preparation method and application thereof |
| 12/10/2008 | CN101319392A Hafnium iron manganese three-doped lithium niobate crystal and method of producing the same |
| 12/10/2008 | CN101319389A Preparation method of gadolinium gallium garnet planar interface crystal |
| 12/10/2008 | CN101319365A Process for preparing silicon crystal |
| 12/10/2008 | CN101319364A Process for preparing gallium doped elementarysubstance solar energy single crystal |
| 12/10/2008 | CN101319353A Carbon/carbon composite material crucible pot and preparing technique thereof |
| 12/10/2008 | CN101319352A Vertical pulling type single crystal growth furnace |
| 12/10/2008 | CN101319351A Monocrystalline growing furnace |
| 12/10/2008 | CN101319350A Single crystal manufacturing method |
| 12/04/2008 | WO2008146725A1 Process for production of silicon single crystal, and highly doped n-type semiconductor substrate |
| 12/04/2008 | WO2008146724A1 Process for production of silicon single crystal, and silicon single crystal substrate |
| 12/04/2008 | WO2008146443A1 Method for growing silicon single crystal |
| 12/04/2008 | WO2008146439A1 Method for pulling silicon single crystal |
| 12/04/2008 | WO2008146371A1 Silicon single-crystal pullup apparatus |
| 12/03/2008 | EP1997941A1 PROCESS FOR PRODUCING ZnO SINGLE CRYSTAL ACCORDING TO METHOD OF LIQUID PHASE GROWTH |
| 12/03/2008 | EP1997940A1 METHOD FOR MANUFACTURING Si SINGLE CRYSTAL INGOT BY CZ METHOD |
| 12/03/2008 | CN201158722Y Thermal field device for gallium arsenide crystal growth |
| 12/03/2008 | CN101316953A Quartz glass crucible, process for producing the same, and use |
| 12/02/2008 | US7459720 Single crystal wafer and solar battery cell |
| 11/27/2008 | WO2008142993A1 Method for manufacturing single crystal |
| 11/27/2008 | WO2008142992A1 Method for manufacturing single crystal |
| 11/27/2008 | US20080292524 Crucible for the Treatment of Molten Silicon |
| 11/27/2008 | US20080292523 Silicon single crystal wafer and the production method |
| 11/27/2008 | US20080290315 Piezoeletric Single Crystal and Method of Production of Same, Piezoelectric Element, and Dielectric Element |
| 11/27/2008 | US20080289568 Quartz glass crucible, process for producing the same, and use |
| 11/27/2008 | DE112007000120T5 Verfahren zum Injizieren eines Dotierungsmittelgases A method of injecting a dopant gas |
| 11/27/2008 | DE102008022747A1 Silicium-Einkristall-Wafer und Verfahren zur Herstellung Silicon single crystal wafer and methods for preparing |
| 11/26/2008 | CN201154996Y Dual-camera czochralski single crystal diameter detection device based on digital signal processor |
| 11/26/2008 | CN101311370A Large-sized bismuth zinc borate nonlinear optical crystal, preparation method and use |
| 11/26/2008 | CN101311335A Dismounting device for czochralski crystal growing furnace thermal system |
| 11/26/2008 | CN101311334A Single-crystal furnace guide shell and production process thereof |
| 11/26/2008 | CN100436660C Scintillation substances (variants) |
| 11/26/2008 | CN100436658C Melt liquid level position detecting method for CZ method monocrystalline silicon growth |
| 11/26/2008 | CN100436657C Hough transform based CZ monocrystal silicon bar diameter measuring method |
| 11/26/2008 | CN100436656C Method for detecting liquid level contact of seed crystal and melted silicon in monocrystal oven |