Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 15 - Single-crystal growth by pulling from a melt, e.g. czochralski method
Patents for C30B 15 - Single-crystal growth by pulling from a melt, e.g. czochralski method (9,854)
11/2007
11/13/2007US7294203 Heat shielding member of silicon single crystal pulling system
11/13/2007US7294199 Nitride single crystal and producing method thereof
11/13/2007US7294196 Silicon single crystal wafer, an epitaxial wafer and a method for producing a silicon single crystal
11/08/2007US20070256625 Apparatus for pulling single crystal by CZ method
11/07/2007CN100347346C Method for producing crystal of fluoride
11/06/2007US7291222 Systems and methods for measuring and reducing dust in granular material
11/06/2007US7291221 Electromagnetic pumping of liquid silicon in a crystal growing process
11/01/2007WO2007122833A1 Method for measuring distance between reference reflector and melt surface, method for control the position of melt surface using same, and silicon single crystal producing apparatus
11/01/2007WO2007122231A1 Device for the manufacture of crystals from electrically conductive smelts
10/2007
10/31/2007EP1849893A1 Metal fluoride single crystal pulling apparatus and process for producing metal fluoride single crystal with the apparatus
10/31/2007EP1848844A1 Electromagnetic pumping of liquid silicon in a crystal growing process
10/31/2007EP1848843A1 Method for producing directionally solidified silicon ingots
10/31/2007CN200967842Y Smelting crystal furnace
10/31/2007CN101063232A Lanthanum titanates single-crystal and upgrowth technology thereof
10/31/2007CN101063230A Double-doped lithium niobate crystsal and method for making same
10/31/2007CN101063229A Neodymium doped lithium barium niobate laser crystal and method for making same and use
10/31/2007CN101063227A Technique and arrangement for low dislocations germanium mono-crystal with crucible lowering down czochralski method
10/31/2007CN101063224A Silicon rod automatically ingot pulling mechanism
10/31/2007CN101063223A Preparation method of carbon/carbon thermal insulation cover for monocrystalline silicon draw machines
10/31/2007CN100346010C Fuse-elements crystal real-time viewing system
10/25/2007DE102007020239A1 Device for the production of silicon crystals from electrically conductive melts, exhibits crucible having melt arranged in growth chamber, heating arrangement surrounding the crucible, and power supply unit arranged outsides of the chamber
10/24/2007CN100344801C Method for producing silicon slice and monocrystalline silicon
10/24/2007CN100344800C Growth of tricesium borate monocrystal cosolvent
10/23/2007CA2369962C Method and apparatus for continuous crystal pulling
10/18/2007US20070243125 Synergistically doped potassium niobate
10/18/2007US20070241481 Method for the Growth of Semiconductor Ribbons
10/18/2007US20070241284 Scintillator Material Based on Rare Earth With a Reduced Nuclear Background
10/18/2007US20070240635 Crucible for The Crystallization of Silicon
10/18/2007US20070240634 Crystal growing apparatus having a crucible for enhancing the transfer of thermal energy
10/18/2007US20070240631 Epitaxial growth of compound nitride semiconductor structures
10/18/2007US20070240629 Method for manufacturing a silicon single crystal
10/18/2007US20070240628 Silicon wafer
10/17/2007CN101054728A Molybdate crystal for laser and excited Raman frequency shift and preparing method and use thereof
10/17/2007CN101054727A Non-linear optics crystal yttrium calcium vanadate and preparing method and use thereof
10/17/2007CN101054725A Method for growing lithium aluminate crystal
10/17/2007CN101054724A Method of preparing barium yttrium borate and barium yttrium borate crystal and use thereof
10/17/2007CN101054721A Silicon single crystal wafer for IGBT and method for manufacturing silicon single crystal wafer for IGBT
10/17/2007CN101054717A Intermittent feeding technique for increasing the melting rate of polycrystalline silicon
10/16/2007US7282190 Silicon layer production method and solar cell production method
10/16/2007US7282095 Silicon single crystal pulling method
10/16/2007US7282094 Method of simulation with respect to density distribution and size distribution of void defect within single crystal and oxygen precipitation nucleus within single crystal
10/11/2007DE102007015184A1 Silica glass pot with container shape for growth of silicon single crystal by Czochralski process, includes a transparent layer formed at the inner periphery and an opaque layer with large number of bubbles formed at the outer periphery
10/10/2007EP1842595A1 Method and device for comminuting and sorting polysilicon
10/10/2007EP1532297B1 Quartz glass crucible for pulling up silicon single crystal and method for producing the same
10/10/2007CN200958129Y Movable hot screen apparatus of monocrystal furnace
10/10/2007CN101050548A Crystal growth way of crystal pulling method for tantalate
10/04/2007WO2007030501A3 Microfluidic manipulation of fluids and reactions
10/04/2007US20070227440 Arsenic dopants for pulling of silicon single crystal, process for producing thereof and process for producing silicon single crystal using thereof
10/04/2007US20070227439 Method for manufacturing defect-free silicon single crystal
10/03/2007EP1840248A1 Semiconductor single crystal producing device and producing method
10/03/2007CN101048539A Single crystal wire and manufacturing method of the same
10/03/2007CN100340703C Neodymium-doped lanthanum strontium aluminate tantalate laser crystal and process for preparing the same
09/2007
09/27/2007US20070224783 Process for forming low defect density, ideal oxygen precipitating silicon
09/20/2007US20070215038 Semiconductor Single Crystal Manufacturing Apparatus and Graphite Crucible
09/20/2007US20070215033 Method and apparatus for manufacturing group iii nitride crystals
09/20/2007US20070214839 Device For Depositing A Layer Of Polycrystalline Silicon On A Support
09/19/2007CN101040068A Single-crystal production apparatus
09/19/2007CN101037805A Yttrium sodium erbium molybdate doped laser crystal and preparation method and usage thereof
09/19/2007CN101037804A Yttrium erbium ion gadolinium sodium molybdate double-doped laser crystal and preparation method and usage thereof
09/19/2007CN101037803A Yttrium vanadic acid lanthanum doped laser crystal and preparation method and usage thereof
09/19/2007CN101037802A Yttrium neodymium gadolinium barium molybdate doped laser crystal and preparation method and usage thereof
09/19/2007CN101037801A Hf:Er:LiNbO3 crystal and preparation method thereof
09/19/2007CN101037800A Neodymium boracic acid oxygen calcium yttrium lanthanum doped laser crystal and preparation method and usage thereof
09/19/2007CN101037799A Erbium boracic acid lanthanum calcium doped laser crystal and preparation method and usage thereof
09/19/2007CN101037798A Erbium ytterbium boracic acid lanthanum calcium double-doped laser crystal and preparation method and usage thereof
09/19/2007CN101037797A Erbium ytterbium boracic acid gadolinium strontium doped laser crystal and preparation method and usage thereof
09/19/2007CN101037796A Neodymium boracic acid oxygen calcium gadolinium lanthanum doped laser crystal and preparation method and usage thereof
09/19/2007CN101037794A Method for producing high quality silicon single crystal and silicon single crystal wafer made by using the same
09/19/2007CN100338268C Furnace for growing compound semiconductor single crystal and method of growing the same by using the furnace
09/19/2007CN100338267C Method for lowering dislocation at tail of monocrystal of gallium phosphide
09/18/2007US7270706 Roll crusher to produce high purity polycrystalline silicon chips
09/13/2007US20070209573 Method for preparing silicon carbide single crystal
09/12/2007EP1831436A1 Controlling melt-solid interface shape of a growing silicon crystal using a variable magnetic field
09/12/2007EP1556529B1 Method and apparatus for crystal growth
09/12/2007EP1115918B1 Enhanced n-type silicon material for epitaxial wafer substrate and method of making same
09/11/2007US7268549 Magnetic resonance spectrometer
09/06/2007US20070204789 Method For Evaluating Crystal Defects Of Silicon Wafer
09/06/2007US20070204788 Lithium tantalate substrate and method of manufacturing same
09/05/2007EP1829992A1 Process for producing single crystal and process for producing annealed wafer
09/05/2007EP1828443A1 Superconductor fabrication
09/05/2007CN101031675A Partially devitrified crucible
09/04/2007US7264750 Single crystal ingot doped with Cerium, Europium, Terbium or Ytterbium; crystal face is composed of a plurality of smooth partial region surfaces
09/04/2007US7264674 Method for pulling a single crystal
08/2007
08/30/2007WO2007097071A1 Position measuring method
08/30/2007US20070199505 Optical Medium, An Optical Lens And A Prism
08/30/2007US20070199504 Liquid Crystal Display And Electronic Device Having Same
08/30/2007DE19758833B4 Seed crystal holder used in Czochralski single crystal growth process
08/29/2007CN200940171Y Upper transmission steel cable holding means part of crystal growth furnace
08/29/2007CN200940170Y Lateral lighting part used for circular magnetic ring crystal growth furnace
08/29/2007CN200940169Y Crystal pulling device
08/29/2007CN101024902A Zr:Fe:LiNbO3 crystal and its preparing method
08/29/2007CN101024901A Zr:LiNbO3 crystal and its preparing method
08/29/2007CN101024894A Device and method for producing a single crystal, single crystal and semiconductor wafer
08/28/2007US7261773 Melting crucible
08/23/2007US20070193505 Apparatus and method for diamond production
08/23/2007US20070193503 Method of fabricating polycrystalline silicon plates
08/23/2007US20070193502 Method of producing fine particle-like materials, and fine particle-link materials
08/23/2007US20070193501 Silicon single crystal wafer for IGBT and method for manufacturing silicon single crystal wafer for IGBT
08/23/2007US20070193500 Method for manufacturing single crystal semiconductor
08/23/2007DE102006019807B3 Verfahren zur pyrometrischen Messung der Temperatur des Schmelzgutes in Einkristallzüchtungsanlagen A method for pyrometric measurement of the temperature of the melt in Einkristallzüchtungsanlagen
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