Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 15 - Single-crystal growth by pulling from a melt, e.g. czochralski method
Patents for C30B 15 - Single-crystal growth by pulling from a melt, e.g. czochralski method (9,854)
11/2008
11/26/2008CN100436315C Silicon production process
11/25/2008US7455731 Polycrystalline silicon rod and method for processing the same
11/20/2008WO2008140763A1 Low etch pit density (epd) semi-insulating iii-v wafers
11/20/2008US20080286565 Method For Manufacturing Epitaxial wafer
11/20/2008US20080282968 Method of Growing Single Crystals from Melt
11/20/2008DE19700498B4 Einkristall-Ziehverfahren A single crystal pulling method
11/20/2008DE102007023040A1 Method for cultivating monocrystal from melt in crucible, involves filling crucible with polycrystalline material with different volumes
11/19/2008CN101307496A Gadolinium illinium scandium gallium garnet crystal GYSGG and its smelt method crystal growth method
11/19/2008CN100434574C Growth method for Yb and Cr4+ doped yttrium-aluminium garnet laser crystal
11/18/2008US7452419 Method for performing crystallization trials
11/12/2008EP1743385B1 Method and device for producing metal foils
11/12/2008CN101302647A Large size barium borate bismuth nonlinear optical crystal and preparation thereof
11/12/2008CN101302646A Method for producing semiconductor wafer of silicon and semiconductor wafer of silicon
11/12/2008CN100432023C Method for manufacture thermal field charcoal/charcoal crucible for single crystal silicon pulling furnace
11/06/2008WO2008133278A1 Process for producing silicon single crystal, apparatus therefor and silicon single crystal ingot
11/06/2008US20080271665 Method for producing group III Nitride-based compound semiconductor
11/05/2008CN101298695A Growth method of niobic acid calcium single crystal
11/05/2008CN100430531C Czochralski pullers
11/04/2008US7445674 Crystallization apparatus, crystallization method, device, optical modulation element, and display apparatus
10/2008
10/30/2008WO2008131075A2 Large grain, multi-crystalline semiconductor ingot formation method and system
10/30/2008WO2008129960A1 Expandable graphite sheet, method for protecting carbonaceous crucible using the expandable graphite sheet, and single crystal pulling apparatus
10/30/2008WO2008128378A1 Vertical pulling and zone melting method for producing monocrystalline silicon
10/30/2008US20080264332 Method, system, and apparatus for doping and for multi-chamber high-throughput solid-phase epitaxy deposition process
10/30/2008US20080264331 Manufacturing Method and Manufacturing Apparatus of a Group III Nitride Crystal
10/29/2008EP1985593A2 Quartz glass crucible, its process of manufacture and use
10/29/2008EP1346087A4 Energy pathway arrangement
10/29/2008CN101294304A Growth technique for cadmium tungstate twinkling monocrystal with crucible descent method
10/29/2008CN101294299A Crystal revolving gear for artificial crystal growth
10/28/2008US7442253 Process for forming low defect density, ideal oxygen precipitating silicon
10/28/2008US7442251 Method for producing silicon single crystals and silicon single crystal produced thereby
10/23/2008WO2008126779A1 Method for protecting carbonaceous crucible and single crystal pulling apparatus
10/23/2008US20080257254 Large grain, multi-crystalline semiconductor ingot formation method and system
10/23/2008DE112006002595T5 Herstellungsvorrichtung und Herstellungsverfahren für ein Einkristall-Halbleiter Production apparatus and production method for a single crystal semiconductor
10/16/2008WO2008092097A3 Multi-beam optical afterheater for laser heated pedstal growth
10/16/2008US20080251007 Method of controlling an epitaxial growth process in an epitaxial reactor
10/16/2008DE10066120B4 Verfahren zur Wärmebehandlung eines Siliciumwafers und der wärmebehandelte Siliciumwafer A method for heat treating a silicon wafer and the heat-treated silicon wafer
10/15/2008EP1979512A1 Crucible for the treatment of molten silicon
10/14/2008US7435294 Method for manufacturing silicon single crystal, and silicon wafer
10/14/2008CA2326056C Direct synthesis process of indium phosphide
10/09/2008WO2008120435A1 Method of growing single crystal and single crystal pulling apparatus
10/09/2008US20080245292 Apparatus and methods of growing void-free crystalline ceramic products
10/09/2008US20080245291 Method for producing silicon single crystal
10/09/2008DE10066121B4 Verfahren zur Wärmebehandlung eines Siliciumwafers und der wärmebehandelte Siliciumwafer A method for heat treating a silicon wafer and the heat-treated silicon wafer
10/08/2008CN101283121A Methods and apparatus for epitaxial film formation
10/08/2008CN101280458A Growing method of carbon-doped sapphire crystal by EFG method
10/07/2008US7431769 Method for performing crystallization trials
10/07/2008US7431765 Process for preparing single crystal silicon having improved gate oxide integrity
10/07/2008US7431764 Method for pulling up single crystal
10/02/2008WO2008025872A3 Crystal manufacturing
10/02/2008US20080241519 Semiconductor Wafer and Process For Its Production
10/02/2008US20080237607 Light emitting element and method of making same
10/02/2008US20080236476 Silicon single crystal wafer for particle monitor
10/02/2008DE19703620B4 Einkristall-Ziehvorrichtung Single crystal pulling apparatus
10/02/2008DE10066123B4 Process for heat treating a silicon wafer used in the production of semiconductor circuits comprises forming a silicon wafer having a specified oxygen concentration
10/01/2008EP1310583B1 Method for manufacturing of silicon single crystal wafer
10/01/2008CN101275279A Piezo crystal having four-lattice structure
10/01/2008CN101275278A Stibium gallium silicate piezoelectric single crystal
10/01/2008CN101275277A Niobium barium gallium silicate crystal, preparation and use thereof
10/01/2008CN101275194A Magnetic shape memory alloy monocrystalline and preparation thereof
09/2008
09/30/2008US7429296 Method for manufacturing photoconductive layer constituting radiation imaging panel
09/25/2008WO2008114855A1 Process for producing zinc oxide single-crystal
09/25/2008US20080229999 Method Of Manufacturing A Calcium Fluoride Single Crystal
09/23/2008US7427325 Method for producing high quality silicon single crystal ingot and silicon single crystal wafer made thereby
09/17/2008EP1560950B1 A crystal puller and method for growing a monocrystalline ingot
09/17/2008CN100419133C Method for growing high-performance tube type sapphire back cover
09/12/2008WO2008107575A1 Method for recycling helium and device for implementing the same
09/11/2008DE19932026B4 Einrichtung zum Züchten von Kristallen mittels des Czochralski-Verfahrens, bei dem die Kristalle während des Züchtungsprozesses sowohl aus der Schmelze gezogen als auch um eine Achse gedreht werden Be means for growing crystals by the Czochralski method, in which the crystals was removed during the growth process both from the melt and rotated about an axis
09/10/2008EP1663881B1 Method for producing a piece made of sintered amorphous silica, and mold and slurry used in this method
09/10/2008CN100418246C Doped organic semiconductor materials and process for their preparation
09/09/2008US7422631 Mould parts of silicon nitride and method for producing such mould parts
09/04/2008WO2008105136A1 Method for manufacturing silicon single crystal wafer
09/04/2008US20080213151 Pr-Containing Scintillator Single Crystal, Method of Manufacturing the Same, Radiation Detector, and Inspection Apparatus
09/04/2008US20080210155 Silicon single crystal and process for producing it
09/03/2008EP1576591A4 Bit-wise optical data storage utilizing aluminum oxide single crystal medium
09/03/2008CN100415945C Method of improving life of straight pulling silicon single crystal furnace thermal field component and single crystal furnace
09/03/2008CN100415944C Method and apparatus of clearing SiO in straight pulling silicon single crystal furnace
09/02/2008US7419545 Method for producing silicon carbide (SiC) single crystal and silicon carbide (SiC) single crystal obtained by such method
08/2008
08/28/2008US20080206123 Silicon feedstock for solar cells
08/28/2008US20080203361 Thermal barrier separates crystal growth area from synthesizing melt area of vessel; semiconductors
08/27/2008EP1961843A2 Method for producing BaLiF3 single crystal
08/27/2008EP1961702A1 METALLIC ELECTROCONDUCTIVE 12Cao·7Al2O3 COMPOUND AND PROCESS FOR PRODUCING THE SAME
08/27/2008CN201106071Y Cusp magnetic field device of single-crystal furnace
08/27/2008CN101250748A Dumpage type polysilicon vacuum ingot-drawing stove
08/26/2008US7416603 High quality single crystal and method of growing the same
08/21/2008WO2008099839A1 Process for producing compound semiconductor single crystal and crystal growing apparatus
08/21/2008US20080197339 Silicon chip and nanolever comprise multiwalled carbon nanotubes and atom reservoir and indium nanoparticle ram
08/20/2008EP1291456B1 Polycrystalline silicon rod and method for processing the same
08/20/2008EP1074643B1 Single-crystal silicon wafer having few crystal defects and method for manufacturing the same
08/20/2008CN101245487A Single-crystal electromagnetic field
08/19/2008US7413609 Semiconductor single crystal manufacturing apparatus
08/19/2008US7413606 Method for producing crystal of fluoride
08/19/2008US7413605 Method for manufacturing silicon single crystal
08/14/2008WO2008096518A1 Method for measuring distance between lower end surface of heat shielding member and material melt surface, and method for controlling the distance
08/14/2008WO2008095594A1 Crucible and method of filling a crucible for melting a non-ferrous product
08/14/2008WO2008076730B1 Directional crystallization of silicon sheets using rapid thermal processing
08/14/2008DE112006002580T5 Einkristallsiliciumziehgerät, Verfahren zum Verhindern der Kontamination von Siliciumschmelze und Gerät zum Verhindern der Kontamination von Siliciumschmelze Einkristallsiliciumziehgerät, method of preventing contamination of the silicon melt and apparatus for preventing contamination of the silicon melt
08/14/2008DE102007005346A1 Halbleiterscheiben aus Silicium und Verfahren zu deren Herstellung Semiconductor wafers of silicon and process for their preparation
08/13/2008EP1956119A1 Quartz glass crucible, process for producing the same, and use
08/13/2008EP1451394B1 Aluminum oxide material for optical data storage
08/13/2008CN101240449A Method for purifying silicon
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