Patents for C30B 15 - Single-crystal growth by pulling from a melt, e.g. czochralski method (9,854)
05/2008
05/07/2008CN101175872A Method for producing silicon single crystals and silicon single crystal produced thereby
05/07/2008CN101174756A Calcium niobate laser crystal doped with ytterbium and method for producing the same
05/07/2008CN101173369A Improved method and device for growth of doping silicon monocrystal
05/07/2008CN101173368A Crystal growing apparatus with melt-doping facility in crystal growth process
05/06/2008US7368011 Apparatus for manufacturing silicon single crystal, method for manufacturing silicon single crystal, and silicon single crystal
05/02/2008WO2008050524A1 Apparatus for producing single crystal and method for producing single crystal
05/01/2008US20080102287 Silicon wafer for igbt and method for producing same
05/01/2008US20080098953 Method for continuous, in situ evaluation of entire wafers for macroscopic features during epitaxial growth
04/2008
04/30/2008CN101168850A Silicon single crystal manufacturing method and silicon wafer manufacturing method
04/30/2008CN101168848A Method for controlling fused silicon liquid level position of czochralski silicon mono-crystal furnace
04/30/2008CN100385754C Nd-doped lanthanum calcium oxygen borate laser crystal, method for making same and use thereof
04/30/2008CN100385046C Method for producing silicon wafer
04/29/2008US7364715 As-grown single crystal of alkaline earth metal fluoride
04/29/2008US7364618 Silicon wafer, method for manufacturing the same and method for growing silicon single crystals
04/24/2008US20080095923 Superconductor Fabrication
04/24/2008US20080092804 Quartz glass crucible and method for treating surface of quartz glass crucible
04/24/2008DE102007049666A1 Production of p- doped epitaxial coated silicon semiconductor wafers dopes a single crystal with boron and hydrogen and a controlled nitrogen concentration
04/23/2008EP1914795A1 Silicon wafer for semiconductor and manufacturing method thereof
04/23/2008CN101167163A Baffle wafers and randomly oriented polycrystallin silicon used therefor
04/23/2008CN101165224A Germanium doping silicon wafer with internal purity absorbing function and preparation method thereof
04/23/2008CN100383295C Method for automatic control of Czochralski crystal grower
04/22/2008US7361218 Method and apparatus for fabricating a crystal fiber
04/22/2008CA2361708C Silicon ribbon growth dendrite thickness control system
04/17/2008US20080087919 Filling a capsule with a source material containing less than 1 weight percent oxygen, a mineralizer, seed crystals, and a nitrogen-containing solvent;processing in a supercritical fluid; light emitting diode, laser diode, photodetector, avalanche photodetector, field-effect transistor
04/10/2008DE19548845B4 Vorrichtung und Verfahren zum Ziehen von Einkristallen nach dem Czochralski-Verfahren Apparatus and method for pulling single crystals by the Czochralski method
04/10/2008DE102007027111A1 Silicon disk, for use in electronic components, has a zone of rotational symmetry with a low bulk micro defect density
04/03/2008WO2008039816A1 Method and apparatus for the production of crystalline silicon substrates
04/03/2008WO2008038693A1 Dopant gas injecting method
04/03/2008WO2008038450A1 Single crystal manufacturing apparatus and method
04/03/2008US20080081013 Growing a single crystal from a solution in an atmosphere of inert gas containing oxygen; cooling the single crystal with lowering molar fraction of oxygen in the inert gas below a molar fraction in the growing step; rare earth, alkaline earth metals, gallium, aluminum, siliscon, oxygen
04/03/2008US20080078322 Silicon single crystal pulling device and graphite member used therein
04/03/2008US20080078207 Reinforcing method of silica glass substance and reinforced silica glass crucible
04/02/2008CN201043196Y Multi-thermal area heater for crystal growth
04/02/2008CN100379006C SOI wafer and method for producing it
03/2008
03/27/2008WO2008036888A1 C-plane sapphire method and apparatus
03/27/2008WO2008034578A1 Process for the production of germanium-bearing silicon alloys
03/27/2008WO2008034577A1 Process for the production of si by reduction of sihc13 with liquid zn
03/27/2008WO2008034576A1 PRODUCTION OF Si BY REDUCTION OF SiCL4 WITH LIQUID Zn, AND PURIFICATION PROCESS
03/26/2008CN101148777A Method and device for growing gallium-mixing silicon monocrystal by czochralski method
03/25/2008US7348076 sapphire single crystal is in the form of a sheet having a length>width>>thickness, the width not being less than 15 centimeters and the thickness being not less than about 0.5 centimeters
03/25/2008US7347956 Ytterbium (Yb) mixed oxide having a base crystal consisting of garnet single crystal or a borate single crystal; forms an optically active charge transfer state (CTS) together with a neighboring negative ion; achieve a high-accuracy scintillation detector for enhanced resolution tomography scan
03/20/2008US20080070337 Light emitting element and method of making same
03/20/2008DE102006041736A1 Verfahren und Anordnung zur Herstellung eines Rohres Method and arrangement for manufacturing a pipe
03/19/2008EP1900847A2 Annular furnace member coated with inorganic material
03/19/2008EP1899508A1 Crucible for the crystallization of silicon
03/19/2008CN101146743A Process for the production of si by reduction of siclj with liquid zn
03/19/2008CN101144187A Y and Zn double doping lead tungstate crystal and preparation method thereof
03/19/2008CN101144178A A single crystal fulling machine and method for manufacturing heavy cyrstal
03/18/2008US7344689 Silicon wafer for IGBT and method for producing same
03/18/2008US7344594 Melter assembly and method for charging a crystal forming apparatus with molten source material
03/13/2008WO2008029827A1 PROCESS FOR PRODUCING AlN CRYSTAL
03/13/2008US20080060572 Magnetic Field Applied Pulling Method for Pulling Silicon Single Crystal
03/12/2008EP1897977A1 Method of growing silicon single crystal
03/12/2008EP1897976A2 Method for producing silicon single crystal and method for producing silicon wafer
03/12/2008CN201033808Y Silicon core feeding clamping head
03/12/2008CN100374628C Method and device for prodn. of silicon single crystal, silicon single crystal, and silicon semiconductor wafers with determined defect distributions
03/12/2008CN100374627C Method for producing high purity silica crucible by electrolytic refining, mfg. method of crucible and pulling method
03/11/2008US7341787 doping silicon or germanium with group III compounds for p-type doping and to group V compounds for n-type doping, coating with an epitaxial layer and optionally having structures formed by electronic components; substrates having low electrical resistance
03/06/2008WO2008028051A1 High-index uv opitcal materials for immersion lithography
03/06/2008WO2008025872A2 Crystal manufacturing
03/06/2008US20080053370 Method for producing silicon single crystal
03/06/2008US20080053369 Method for manufacturing colloidal crystals via confined convective assembly
03/06/2008US20080053368 Method for producing silicon single crystal and method for producing silicon wafer
03/06/2008US20080053367 Method and apparatus for manufacturing a tube
03/06/2008US20080053366 Method and Apparatus of Growing Silicon Single Crystal and Silicon Wafer Fabricated Thereby
03/06/2008US20080053365 Method and Apparatus of Growing Silicon Single Crystal and Silicon Wafer Fabricated Thereby
03/06/2008CA2664325A1 Crystal manufacturing
03/05/2008EP1895030A2 Method and assembly for manufacturing a pipe
03/05/2008EP1895029A1 Apparatus for producing semiconductor single crystal
03/05/2008EP1895028A1 Apparatus for producing semiconductor single crystal
03/05/2008EP1895027A1 Method of growing silicon single crystal and process for producing silicon wafer
03/05/2008EP1895026A1 Method of growing silicon single crystal and silicon single crystal grown by the method
03/05/2008EP1895025A2 Semiconductor crystal, and method and apparatus of production
03/05/2008CN101135061A Apparatus and method for supplying solid raw material to single crystal grower
03/05/2008CN101135060A Re3+,Cr5+:LnVO4 automodulation laser crystal and preparation method and application thereof
02/2008
02/28/2008US20080047485 Apparatus for Growing High Quality Silicon Single Crystal Ingot and Growing Method Using the Same
02/27/2008EP1892323A1 Silicon single crystal growing method, silicon wafer and soi substrate using such silicon wafer
02/27/2008EP1689916A4 Scintillation substances (variants)
02/27/2008CN101133193A Controlling melt-solid interface shape of a growing silicon crystal using a variable magnetic field
02/27/2008CN101133192A Electromagnetic pumping of liquid silicon in a crystal growing process
02/27/2008CN101130882A Guiding mold structure used for growth shaping single crystal alumina porcelain
02/27/2008CN100371508C Crystal lifting device
02/27/2008CN100371507C System and method for controlling the isodiametric growth of crystal
02/27/2008CN100371506C Thermal-insulation device for single-crystal furnace
02/26/2008US7335256 Silicon single crystal, and process for producing it
02/21/2008DE112006000771T5 Si-dotierter GaAs-Einkristallingot und Verfahren zur Herstellung desselbigen, und Si-dotierter GaAs-Einkristallwafer, der aus Si-dotiertem GaAs-Einkristallingot hergestellt wird Si-doped GaAs single crystal ingot and process for producing desselbigen, and Si-doped GaAs single crystal wafer, which is made of Si-doped GaAs single crystal ingot
02/20/2008EP1888996A2 Transparent ceramic composite
02/20/2008EP1888802A2 Method and apparatus for growing single-crystal metals
02/20/2008EP1888457A1 Synthesis of a starting material with improved outgassing for the growth of fluoride crystals
02/20/2008CN101128625A Method for growing thin semiconductor ribbons
02/20/2008CN101126174A Crystal rotating mechanism for artificial crystal growth
02/20/2008CN101126173A Fluid level position monitoring apparatus of melt in growth process of silicon single crystal
02/19/2008US7332032 Precursor mixtures for use in preparing layers on substrates
02/19/2008US7332028 Method for manipulating a rare earth chloride or bromide or iodide in a crucible comprising carbon
02/14/2008US20080038526 Silicon Epitaxial Wafer And Manufacturing Method Thereof
02/14/2008US20080038179 Apparatus and method for producing single crystal, and silicon single crystal
02/14/2008US20080035051 System and method for crystal growing
02/14/2008US20080035050 An Apparatus for Producing a Single Crystal
02/13/2008EP1887110A1 Silicon single crystal manufacturing method and silicon wafer
02/13/2008CN100368603C Neodymium doped lithium lanthanum tungstate lacer crystla and its prepn
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