Patents for C30B 15 - Single-crystal growth by pulling from a melt, e.g. czochralski method (9,854)
02/2008
02/13/2008CN100368602C Neodymium-doped strontium-yttrium borate laser crystal
02/12/2008US7329317 Method for producing silicon wafer
02/12/2008US7329316 Manufacturing method for QPM wavelength converter elements, QPM wavelength converter element, and medical laser apparatus using it
02/07/2008US20080029019 Method For Producing Directionally Solidified Silicon Ingots
02/07/2008DE112006000816T5 Produktionsverfahren für Siliziumeinkristall, getemperter Wafer und Produktionsverfahren für getemperten Wafer Production process for silicon single crystal wafer annealed and annealed wafer production for
02/05/2008US7326395 Wafer is occupied by N region outside OSF region generated in a ring shape in the radial direction of a single crystal, and Fe concentration of the entire plane in the radial direction including a peripheral part of the wafer is 1x1010 atoms/cm3 or less; produced by the Czochralski method
02/05/2008US7326297 Device for the production of crystal rods having a defined cross-section and column-shaped polycrystallization structure by means of floating-zone continuous crystallization
01/2008
01/31/2008US20080022927 Microfluidic device for controlled movement of material
01/31/2008US20080022922 Crystal pulling apparatus and method for the production of heavy crystals
01/31/2008DE102006034433A1 Crystal pulling apparatus for the production of heavy crystals by Czochralski method, comprises crystal hub- and rotating device by which the crystal is pulled at its neck hanging from a melt, and crystal support device having a base body
01/31/2008DE102005013787B4 Verfahren zur Erzeugung eines Arsen-Dotiermittel für das Ziehen von Siliziumeinzelkristallen Method for generating a arsenic dopant for pulling of silicon single crystals
01/30/2008CN101113531A Fluxing medium growing method for fluoroboric acid calcium non-linear optical crystal
01/29/2008US7323048 Method for producing a single crystal and a single crystal
01/29/2008US7323047 Method for manufacturing granular silicon crystal
01/24/2008WO2008010577A1 Method of dopant injection, n-type silicon single-crystal, doping apparatus and pull-up device
01/24/2008US20080020168 Silicon on insulator structure with a single crystal cz silicon device layer having a region which is free of agglomerated intrinsic point defects
01/24/2008US20080019896 Inp Single Crystal Wafer and Method for Producing Inp Single Crystal
01/23/2008EP1881093A2 Silicon single crystal wafer for IGBT and method for manufacturing silicon single crystal wafer for IGBT
01/23/2008CN101111628A Method and apparatus for monolayer deposition (mld)
01/23/2008CN101109104A Device for fixing crystal growth seed crystal
01/22/2008US7320731 Process for growing silicon single crystal and process for producing silicon wafer
01/17/2008WO2008007637A1 Protective sheet for crucible and crucible device using the same
01/17/2008US20080011222 Method for melting semiconductor wafer raw material and crystal growing method for semiconductor wafer
01/16/2008EP1738199B1 Scintillator material based on rare earth with a reduced nuclear background
01/15/2008US7319249 Light emitting element and method of making same
01/15/2008CA2333194C Crystal growth apparatus and method
01/10/2008WO2007137182A3 Controlling agglomerated point defect and oxygen cluster formation induced by the lateral surface of a silicon single crystal during cz growth
01/10/2008US20080008438 Self-Coated Single Crystal, And Production Apparatus And Process Therefor
01/09/2008EP1876269A1 Oxide single crystal and method for production thereof, and single crystal wafer
01/09/2008EP1874983A1 Support for manufacturing a strip based on polycrystalline sillicon
01/09/2008CN201003079Y Doping device for czochralski silicon preparation
01/03/2008WO2008001569A1 Silicon single crystal manufacturing system and silicon single crystal manufacturing method using the system
01/03/2008WO2006107425A3 Baffle wafers and randomly oriented polycrystallin silicon used therefor
01/03/2008US20080000415 Cord Rotating Head for a Crystal Drawing System
01/03/2008US20080000414 Simultaneous irradiation of a substrate by multiple radiation sources
01/03/2008US20080000413 Metal Fluoride Single Crystal Pulling Apparatus and Process for Producing Metal Fluoride Single Crystal With the Apparatus
01/03/2008DE10204178B4 Verfahren und Vorrichtung zum Herstellen eines Einkristalls aus Halbleitermaterial Method and apparatus for producing a single crystal of semiconductor material
01/02/2008EP1873124A2 Method of manufacturing a part from sintered amorphous silica
01/02/2008EP1871926A1 Method for growing thin semiconductor ribbons
01/01/2008US7314522 Apparatus and method for producing single crystal
01/01/2008US7314519 Vapor-phase epitaxial apparatus and vapor phase epitaxial method
01/01/2008US7314518 Furnace for growing compound semiconductor single crystal and method of growing the same by using the furnace
12/2007
12/27/2007WO2007148985A1 Device and method for production of semiconductor grade silicon
12/27/2007DE102006032431A1 Detection of mechanical defects in a boule composed of mono-crystalline semiconductor material, comprises scanning an even surface of the boule by an ultrasound head and determining the positions of the mechanical defects in the boule
12/26/2007CN101093212A Method and device for detecting mechanical defect of the ingot component made of semiconductor material
12/26/2007CN101092747A Laser crystal of yttrium lutecium silicic acid with thulium holmium being doped
12/26/2007CN101092736A Production method and control device for developing single crystal bar in square column body
12/26/2007CN101092735A Multi-piece ceramic crucible and method for making thereof
12/25/2007US7311888 Annealed wafer and method for manufacturing the same
12/25/2007US7311772 Apparatus and method for supplying raw material in Czochralski method
12/21/2007WO2007120871A3 Production of silicon through a closed-loop process
12/20/2007US20070289526 Multi-piece ceramic crucible and method for making thereof
12/20/2007US20070289524 Lithium tantalate substrate and method of manufacturing same
12/19/2007EP1866248A1 Process for the production of si by reduction of siclj with liquid zn
12/19/2007EP1114441B1 Method of forming non-oxygen precipitating czochralski silicon wafers
12/19/2007CN200992594Y Linear rail type crucible lifting device
12/19/2007CN200992593Y Sensor external crystal lifting device
12/19/2007CN101091009A Method for producing directionally solidified silicon ingots
12/19/2007CN101089242A Doped neodymium lithium lanthanum barium tungstate laser crystal and its preparation method and usage
12/19/2007CN101089240A Ytterbium mixed yttrium calcium borate tunable laser crystal and its preparation and application
12/19/2007CN101089239A Lutecium lithium fluoride color-center laser crystal and waveguide crystal material prepared by femtosecond laser induction
12/19/2007CN101089236A Lutecium lithium fluoride intermediate infrared laser crystal of dysprosium activated
12/18/2007US7309393 High resistivity aluminum antimonide radiation detector
12/13/2007WO2007044530A3 Methods and apparatus for epitaxial film formation
12/13/2007US20070283882 Manufacturing equipment for polysilicon ingot
12/13/2007US20070283880 Apparatus and method for the production of bulk silicon carbide single crystals
12/13/2007DE10066124B4 Silicon wafer used in the production of a single crystal silicon ingot consists of a perfect domain with a lower detection boundary of agglomerates
12/12/2007CN101086084A Yb and Zn double-doped lead tungstate crystal and its preparation method
12/12/2007CN100354459C EFG crystal growth apparatus and method
12/06/2007US20070277731 Method and apparatus for growing GaN bulk single crystals
12/06/2007US20070277727 Melt surface position monitoring apparatus in silicon single crystal growth process
12/05/2007EP1862571A1 Melt surface position monitoring apparatus in silicon single crystal growth process
12/05/2007CN101084582A Method for the production of photovoltaic cells
12/05/2007CN100352973C Yb-dopped strontium-lanthanum aluminate-tantalate laser crystal and its prepn
12/04/2007US7303629 Apparatus for pulling single crystal
11/2007
11/28/2007EP1860213A1 Method and apparatus for producing group iii nitride crystal
11/28/2007EP1171211A4 Efg crystal growth apparatus
11/28/2007CN200981899Y Guide mould structure for growing formed single-crystal aluminum oxide
11/28/2007CN101080515A Process for producing single crystal and process for producing annealed wafer
11/28/2007CN101078133A Neodymium-doping lanthanum calcium vanadate laser crystal and its preparation method and use
11/28/2007CN100351435C Process for preparing gas phase doped float-zone silicon monocrystal for solar cell
11/27/2007US7300518 Apparatus and method for producing single crystal, and silicon single crystal
11/27/2007US7300517 Manufacturing method of hydrogen-doped silicon single crystal
11/27/2007US7299658 Quartz glass crucible for the pulling up of silicon single crystal
11/22/2007US20070269338 Silicon Epitaxial Wafer and Manufacturing Method Thereof
11/22/2007US20070266930 Method for Producing a Silicon Single Crystal and a Silicon Single Crystal
11/22/2007US20070266929 Controlling agglomerated point defect and oxygen cluster formation induced by the lateral surface of a silicon single crystal during cz growth
11/22/2007DE19710954B4 Hebezeug für Ringelemente Hoist for ring elements
11/21/2007CN200978306Y Rotatable multi-crucible supporting device in crystal growth system
11/21/2007CN101076618A System for continuous growing of monocrystalline silicon
11/21/2007CN100349814C Reinorcing method of quartz glass material and reinforced quartz glass crucible
11/20/2007CA2480117C Spinel substrate and heteroepitaxial growth of iii-v materials thereon
11/15/2007WO2007035570A3 Method for epitaxial growth of silicon carbide
11/15/2007US20070261632 Apparatus for manufacturing silicon single crystal, method for manufacturing silicon single crystal, and silicon single crystal
11/14/2007EP1158076B1 Production method for silicon single crystal and production device for single crystal ingot, and heat treating method for silicon single crystal wafer
11/14/2007CN101070621A Low defect density, self-interstitial dominated silicon
11/14/2007CN101070610A Steel-wire flexible-shaft centering cover
11/14/2007CN101070609A Crystal rotating mechanism for artificial crystal growth
11/14/2007CN100348783C Arsenic dopants for pulling of silicon single crystal, process for producing thereof and process for producing silicon single crystal using thereof
11/14/2007CN100348782C Low defect density silicon substantially free of oxidution induced stacking faults having vacancy-dominated core
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