Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
11/2007
11/21/2007CN100350457C Magnetoresistive element, magnetic head, magnetic recording apparatus, and magnetic memory
11/20/2007US7298594 Electric-field-effect magnetoresistive devices and electronic devices using the magnetoresistive devices
11/20/2007US7296336 Method to protect a GMR head from electrostatic damage during the manufacturing process
11/15/2007WO2007129705A1 Magnetic device
11/15/2007US20070263434 Magnetic tunnel junction device and writing/reading for said device
11/15/2007US20070262402 Integrated inductor with higher moment magnetic via
11/14/2007EP1438722B1 Magnetic memory with write inhibit selection and the writing method for same
11/14/2007EP1430484B1 Magnetic memory with spin-polarized current writing, using amorphous ferromagnetic alloys, writing method for same
11/14/2007EP1412948B1 Magnetic memory unit and magnetic memory array
11/14/2007CN101071844A Bridge resistance random access memory device and method with a singular contact structure
11/14/2007CN100349308C Hall unit with nano crystal iron-germanium granule magneto sensitive material active layer
11/13/2007US7295465 Thin film magnetic memory device reducing a charging time of a data line in a data read operation
11/13/2007US7295460 Magnetic memory cell, magnetic memory device, and method of manufacturing magnetic memory device
11/13/2007US7295409 CPP giant magnetoresistive element with particular bulk scattering coefficient
11/13/2007US7295407 Magnetoresistance effect element, magnetic head and magnetic reproducing system
11/08/2007WO2007126164A1 Thin film 3 axis fluxgate and the implementation method thereof
11/08/2007WO2007126071A1 Magnetic thin film, magnetoresistive element using the same, and magnetic device
11/08/2007WO2007125022A1 Lay out with a magnetoresistive effect and its usesuse thereof
11/08/2007US20070257287 Assemblies Comprising Magnetic Elements And Magnetic Barrier Or Shielding At Least Partially Around The Magnetic Elements
11/07/2007CN101068037A Methods and apparatus for thermally assisted programming of a magnetic memory device
11/07/2007CN101068036A Magnetic memory device
11/07/2007CN101067933A Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor
11/07/2007CN100347785C Ferromagnetic resonance switchover for magnetic random access storage
11/07/2007CN100347748C Magnetoresistive element, magnetic head, magnetic reproducing apparatus, and magnetic memory
11/07/2007CN100347747C Differential CPP GMR head
11/07/2007CN100347746C Low resistance antiparallel tab magnetoresistive sensor
11/06/2007US7292472 Memory device capable of stable data writing
11/06/2007US7292471 Semiconductor memory device having a voltage-controlled-oscillator-based readout circuit
11/06/2007US7292417 Magnetic apparatus with perpendicular recording medium and head having multilayered reproducing element using tunneling effect
11/06/2007US7292416 CPP magneto resistive head with decreased variation in asymmetry and output
11/06/2007US7292415 Ferromagnetic layered material having reliable uniaxial anisotropy
11/06/2007US7291892 Magnetic random access memory designs with controlled magnetic switching mechanism
11/06/2007US7291506 Magnetic memory device and method of manufacturing the same
11/01/2007WO2007121885A1 Vertical hall sensor element
11/01/2007US20070253246 Thin film magnetic memory device provided with program element
11/01/2007US20070252588 GMR magnetic sensing element having an antiferromagnetic layer extending beyond the track width and method for making the same
10/2007
10/31/2007DE102006019482A1 Optical mark recognition hall-sensor arrangement for e.g. position measurement, has layers placed on substrate, where arrangement is designed such that field-producing device causes magneto-resistive change in layer component
10/31/2007CN101065721A Magnetic sensor for input devices
10/31/2007CN101064358A Magneto-resistive element and method of manufacturing the same
10/31/2007CN101064114A Magnetoresistive effect element and magnetic memory
10/31/2007CN100346492C Magnetosensitive sensor array and manufacturing method thereof
10/31/2007CN100346421C Magnetic random access storage device
10/31/2007CN100346394C Film magnetic head and its individual identification method
10/30/2007US7289305 Magnetoresistive element, magnetic head, and magnetic recording and reproducing apparatus
10/30/2007US7288834 Semiconductor device, carrier, card reader, methods of initializing and checking authenticity
10/30/2007US7288333 Formed via cobalt/iron plating; improved corrosion resistance
10/30/2007US7287316 Lapping monitor device, system and method
10/25/2007WO2007119748A1 Magnetic random access memory and method for manufacturing the same
10/25/2007WO2007119708A1 Magnetic random access memory
10/25/2007WO2007119569A1 Magnetic sensor and method for fabricating the same
10/25/2007WO2007119446A1 Mram and mram data reading/writing method
10/25/2007US20070249080 Magnetic field sensing device and a fabricating method of the same
10/25/2007US20070247901 Mesoscopic Magnetic Body Having Circular Single Magnetic Domain Structure, its Production Method, and Magnetic Recording Device Using the Same
10/25/2007US20070246787 On-plug magnetic tunnel junction devices based on spin torque transfer switching
10/25/2007DE102006017910A1 Vertikales Hall-Sensorelement Vertical Hall sensor element
10/24/2007EP1642343A4 Oblique deposition to induce magnetic anisotropy for mram cells
10/24/2007EP1433181B1 Current source and drain arrangement for magnetoresistive memories (mrams)
10/24/2007CN101061592A Magnetoresistance effect element and its manufacturing method
10/24/2007CN101060160A Memory element and memory
10/24/2007CN100345300C Common bit/common source line high density 1T1RR-RAM array and operation method
10/24/2007CN100345214C Magnetic yoke structure capable of reducing programming energy consumption for MRAM apparatus and producing method thereof
10/23/2007US7286431 Memory device capable of performing high speed reading while realizing redundancy replacement
10/23/2007US7285835 Low power magnetoelectronic device structures utilizing enhanced permeability materials
10/23/2007US7285811 MRAM device for preventing electrical shorts during fabrication
10/23/2007US7284315 Method of forming a magnetic tunnel junction
10/18/2007WO2007117392A2 On-plug magnetic tunnel junction devices based on spin torque transfer switching
10/18/2007WO2007116823A1 Hall element and magnetic sensor
10/18/2007US20070241410 Magnetic memory device and method for fabricating the same
10/18/2007DE102007016069A1 Coreless current sensor for motor vehicle, has Hall-integrated circuit with temperature measuring part to determine environmental temperature, where measuring signal and temperature signal are output outwards over connecting terminals
10/17/2007CN101055916A Magnetic logic part based on the loop closed magnetic multi-layer film
10/17/2007CN101055915A Logic part and magnetic logic part array based on the dual potential base magnetic tunnel junction
10/17/2007CN100344008C Magnetic funnel node device and storage array
10/17/2007CN100343901C Method and apparatus for testing tunnel magnetoresistive effect element
10/17/2007CN100343899C Magnetoresistive element, magnetic head, and magnetic recording and reproducing apparatus
10/17/2007CN100343670C Sensor and method for measuring the areal density of magnetic nanoparticles on a micro-array
10/16/2007US7283335 Magnetic detecting element
10/16/2007US7282755 Stress assisted current driven switching for magnetic memory applications
10/10/2007CN100342463C Method and system for patterning of magnetic thin films using gaseous transformation
10/10/2007CN100342451C 磁存储器 Magnetic memory
10/09/2007US7280323 Magnetoresistance effect element and magnetic head
10/09/2007US7280322 Magnetic sensor and magnetic head with the magnetic sensor
10/09/2007US7280321 Magnetoresistive head
10/09/2007US7280029 Laminated ferrimagnetic thin film, and magneto-resistive effect element and ferromagnetic tunnel element using this thin film
10/09/2007US7279762 Magnetoresistive memory device assemblies, and methods of forming magnetoresistive memory device assemblies
10/04/2007WO2007111319A1 Magnetic random access memory and operation method thereof
10/04/2007WO2007111318A1 Magnetic random access memory and operation method thereof
10/04/2007WO2007111065A1 Magnetic field sensor, physical property measuring device and physical property measuring method using the same, and magnetic field sensor manufacturing method
10/04/2007WO2007110950A1 Semiconductor memory device and method of manufacturing same
10/04/2007US20070230065 Magnetoresistance effect element, magnetic head and magnetic reproducing system
10/04/2007US20070228501 Magnetic recording element and magnetic memory
10/03/2007EP1206763B1 Magnetic sensor
10/03/2007CN101048883A Methods and structures for electrical communication with an overlying electrode for a semiconductor element
10/03/2007CN101047229A Magnetoresistive effect element, magnetic head, and magnetic disk apparatus
10/03/2007CN101047228A Magnetoresistance effect device, magnetic head, magnetic recording system, and magnetic random access memory
10/03/2007CN101047227A Nano magnetic memory device and method of manufacturing the same
10/03/2007CN101047023A Magnetic memory device and method for driving the same
10/03/2007CN100341073C 磁性随机存取存储器 Magnetic random access memory
10/02/2007US7277320 Magnetic memory device, sense amplifier circuit and method of reading from magnetic memory device
10/02/2007US7277318 Magnetic random access memory and method of manufacturing the same
10/02/2007US7277262 CPP magnetoresistive head including a pair of shields and a sense current preamplifier
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