Patents
Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
10/2007
10/02/2007US7276384 Magnetic tunnel junctions with improved tunneling magneto-resistance
10/02/2007US7276175 Semiconductor device fabrication method
09/2007
09/27/2007US20070224454 Magnetic materials having superparamagnetic particles
09/27/2007US20070223151 Novel seed layer for fabricating spin valve heads for ultra-high density recordings
09/27/2007US20070220740 Novel seed layer for fabricating spin valve heads for ultra-high density recordings
09/26/2007CN100340010C Memory cell with an asymmetrical area
09/26/2007CN100339916C Amorphous alloys for magnetic devices
09/25/2007US7274542 Magnetic sensor having a free layer containing a single magnetic domain
09/25/2007US7274207 Semiconductor-integrated circuit utilizing magnetoresistive effect elements
09/25/2007US7274057 Techniques for spin-flop switching with offset field
09/25/2007US7274048 Substrate based ESD network protection for a flip chip
09/20/2007WO2007105472A1 Method for manufacturing magnetoresistance element and apparatus for manufacturing magnetoresistance element
09/20/2007WO2007105358A1 Core rotary element of ferromagnetic dot and information storage element utilizing core of ferromagnetic dot
09/20/2007WO2007104206A1 An integrated three-dimensional magnetic field sensor and a manufacturing method thereof
09/20/2007US20070217088 Method and apparatus for providing magnetostriction control in a freelayer of a magnetic memory device
09/20/2007US20070215967 System and method for reducing critical current of magnetic random access memory
09/20/2007US20070215573 Method for forming a resist pattern of magnetic device
09/20/2007DE102006010652A1 Magnetic field sensor e.g. giant magneto resistance sensor, for measuring magnetic field orientation, has spin valve layer and tunnel structures with layer positions, whose magnetization`s orientations are perpendicular to each other
09/19/2007CN100338777C Magnetic storage device using ferromagnetic tunnel junction element
09/19/2007CN100338700C Method of forming mram devices
09/19/2007CN100338682C Non-volatile memory and semi-conductor integrated circuit device
09/19/2007CN100338652C Method and apparatus for providing magnetostriction control in a freelayer of a magnetic memory device
09/18/2007US7272064 Thin film magnetic memory device for writing data of a plurality of bits in parallel
09/18/2007US7272032 Semiconductor integrated circuit device and magnetic memory device capable of maintaining data integrity
09/18/2007US7271698 Laminated ferrimagnetic thin film, and magneto-resistive effect element and ferromagnetic tunnel element using this thin film
09/18/2007US7271010 Nonvolatile magnetic memory device and manufacturing method thereof
09/13/2007WO2007102456A1 Semiconductor storage device and method for operating same
09/13/2007WO2007102332A1 Offset correction program and electronic compass
09/13/2007US20070212572 Tunnel Junction Device
09/13/2007US20070210792 Magnetic sensor and manufacturing method therefor
09/13/2007US20070210791 Bridge circuited magnetic sensor having magneto-resistive element and fixed resistor with the same layer configuration
09/13/2007US20070209437 Magnetic MEMS device
09/13/2007DE10311717B4 Magnetische Logikeinrichtung, Logikschaltung, Verfahren zu deren Betrieb und deren Verwendung Magnetic logic device, logic circuitry, processes for their operation, and their use
09/13/2007DE102006010484A1 Bewegungssensor Motion sensor
09/12/2007CN101036036A Method for manufacturing physical quantity sensor
09/12/2007CN101034731A Magnetic sensor
09/12/2007CN101034730A Manufacturing method for magnetic sensor
09/12/2007CN101034618A 电感结构 Inductance structure
09/12/2007CN101034146A Magnetic sensor, method of manufacturing the same, and electronic device
09/12/2007CN101034145A Integrated three-dimensional superconductive composite magnetic field sensor and manufacturing method and use thereof
09/12/2007CN100336934C Antiferromagnetic film and magneto-resistance effect element formed by using the same
09/11/2007US7268536 Magnetic linear position sensor
09/07/2007WO2007099874A1 Magnetoresistive element and magnetic random access memory
09/06/2007US20070206407 Spin Based Memory Coupled to CMOS Amplifier
09/06/2007US20070206336 Cpp giant magnetoresistive element
09/06/2007US20070206334 Method of manufacturing magneto-resistive device, magnetic head, head suspension assembly and magnetic disk apparatus
09/06/2007US20070205476 Printed magnetic rom-mprom
09/05/2007EP1830407A1 Magnetoresistance effect element, substrate therefor and manufacturing method thereof
09/05/2007CN101030443A Magnetoresistance effect element and magnetic memory
09/05/2007CN100336239C Method for modifying magnetic tunnel junction conversion characteristics
09/04/2007US7266011 Magneto-resistance effect element and magnetic memory
09/04/2007US7265948 Magnetoresistive element with oxide magnetic layers and metal magnetic films deposited thereon
09/04/2007US7265580 Semiconductor-integrated circuit utilizing magnetoresistive effect elements
09/04/2007US7265540 Angle sensor having low waveform distortion
09/04/2007US7265430 Semiconductor device, magnetic sensor, and magnetic sensor unit
09/04/2007US7265394 Spin tunnel transistor
09/04/2007US7264974 Method for fabricating a low resistance TMR read head
09/04/2007US7264844 Forming oxide buffer layer for improved magnetic tunnel junctions
08/2007
08/30/2007US20070201268 Spin Based Magnetic Sensor
08/30/2007US20070201168 Magnetization Direction Control Method And Application Thereof To Mram
08/30/2007US20070200477 Nanofabrication
08/30/2007US20070200188 Magnetic random access memory with reference magnetic resistance and reading method thereof
08/29/2007EP1364417B1 Keepers for mram electrodes
08/29/2007CN101026222A Magnetoresistive effect element, magnetic head, magnetic reproducing apparatus, and manufacturing method of magnetoresistive effect element
08/29/2007CN101026221A Magnetoresistive effect element, magnetic head and magnetic recording/reproducing apparatus
08/29/2007CN100334714C An improved method for forming minimally spaced MRAM structures
08/28/2007USRE39799 Memory cell array and method for manufacturing it
08/28/2007US7262941 FeTa nano-oxide layer as a capping layer for enhancement of giant magnetoresistance in bottom spin valve structures
08/28/2007US7262474 Magnetic memory device and method of manufacturing the same
08/28/2007US7262064 Magnetoresistive effect element, magnetic memory element magnetic memory device and manufacturing methods thereof
08/23/2007US20070196933 Method for production of MRAM elements
08/23/2007US20070196745 comprising a slit-shaped main transmission region and three pairs of slit-shaped auxiliary transmission regions; improving resolution, high light intensity contrast, narrow the exposed width of the resist film with a small uniform width
08/23/2007US20070195592 Magnetic tunnel junction device and method of manufacturing the same
08/23/2007US20070195589 Thin film magnetic memory device for conducting data write operation by application of a magnetic field
08/22/2007EP1593168B1 Two-step magnetic tunnel junction stack deposition
08/21/2007US7259943 Magnetic head having a current-perpendicular-to-the-plane structure and using a magneto-resistive effect
08/21/2007US7259940 Thin-film magnetic head, head gimbal assembly, and hard disk drive
08/21/2007US7259062 Method of making a magnetic tunnel junction device
08/16/2007US20070190367 Manganese Doped Magnetic Semiconductors
08/16/2007US20070188943 Magnetoresistance Effect Element, Method of Manufacturing Same and Magnetic Head Utilizing Same
08/16/2007US20070187786 Magnetic memory
08/16/2007US20070187785 Magnetic memory cell and manufacturing method thereof
08/15/2007EP1441392B1 Magnetic memory device
08/15/2007CN1332394C Multifunctional serial entry/output circuit
08/15/2007CN1332375C Spin valve sensor having antiferromagnetic pinning layer structures formed in the end regions
08/15/2007CN1331975C Nano grain iron germanium particle film magnetic sensitive material
08/15/2007CN101017667A Magnetoresistance device comprising diffusion barrier layer
08/14/2007US7256971 Process and structure to fabricate CPP spin valve heads for ultra-high recording density
08/09/2007US20070184561 Magnetic random access memory array with free layer locking mechanism and method of its use
08/09/2007US20070183190 Method for ultra-fast controlling of a magnetic cell and related devices
08/09/2007US20070182407 Magnetic sensor and method of producing the same
08/09/2007US20070181964 Magnetic memory, a method of manufacturing the same, and semiconductor integrated circuit apparatus
08/08/2007EP1815539A2 Methods and structures for electrical communication with an overlying electrode for a semiconductor element
08/08/2007EP1155453A4 Extraordinary magnetoresistance at room temperature in inhomogeneous narrow-gap semiconductors
08/08/2007CN2932616Y 半导体晶片和半导体器件 The semiconductor wafer and the semiconductor device
08/08/2007CN1331155C Memory device reading data according to difference in electrical resistance between selected memory cell and reference cell
08/07/2007US7254058 Thin film magnetic memory device provided with program element
08/07/2007US7254057 Magnetic thin-film memory device for quick and stable reading data
08/07/2007US7253995 Magnetic head and magnetic recording/reproducing device
08/07/2007US7253994 Magnetic head, head suspension assembly and magnetic disk apparatus
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