Patents
Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
03/2008
03/13/2008US20080061777 Magnetic detection device including resistance adjusting unit
03/13/2008US20080061768 Magnetic sensor device having components mounted on magnet
03/13/2008US20080061388 Devices and circuits based on magnetic tunnel junctions utilizing a multilayer barrier
03/13/2008US20080061336 Spin transistor based on the spin-filter effect, and non-volatile memory using spin transistors
03/13/2008DE102007041266A1 Sensor device particularly magnetic sensor device, has sensor element mounted above substrate and coplanr to which heating element is mounted and heat diffusion element is provided for thermal connection between sensor and heating element
03/12/2008CN101142494A 磁传感器及其制造方法 Magnetic sensor and manufacturing method
03/12/2008CN101140978A Non mask preparation method based on thin film multiple layer film nano magnetic electron device
03/12/2008CN100375309C Tmr material having ultra-thin magnetic layer
03/12/2008CN100375308C Semiconductor hall sensor
03/12/2008CN100375208C Heat treatment system
03/11/2008US7342824 Method of programming a 3D RRAM
03/11/2008US7342823 Tunneling magnetoresistance device with high magnetoimpedance (MI) effect
03/11/2008US7342822 Magnetic memory device, write current driver circuit and write current driving method
03/11/2008US7341875 Semiconductor memory device with a capacitor formed therein and a method for forming the same
03/11/2008CA2445896C Magnetic sensor, production process of the magnetic sensor and magnetic array suitable for the production process
03/06/2008WO2008026329A1 Magnetism detecting apparatus
03/06/2008WO2008026327A1 Magnetic detector
03/06/2008US20080055790 Transplanted magnetic random access memory (mram) devices on thermally-sensitive substrates using laser transfer and method of making the same
03/06/2008US20080055785 Magnetic disk apparatus and method of manufacturing the apparatus
03/05/2008CN101136451A Magnetic random access memory device using current induced switching
03/05/2008CN100373651C Method for manufacturing magnetosensitive device with giant magnetic impedance effect based on microelectrochenical system
03/05/2008CN100373451C Method of forming a read sensor of a magnetic head
03/04/2008US7339819 Spin based memory coupled to CMOS amplifier
03/04/2008US7339817 Thermally-assisted switching of magnetic memory elements
02/2008
02/28/2008US20080049492 Spin Memory with Write Pulse
02/28/2008US20080049489 Multi-Bit Spin Memory
02/28/2008US20080048649 Thin input device and mobile terminal equipped with the same
02/28/2008DE102006008264B4 MRAM Zelle mit Domänenwandumschaltung und Feldauswahl MRAM cell with domain wall switching and field selection
02/27/2008EP1891452A1 Current sensor
02/27/2008CN100372141C Composite Joule treating method for high impedance material
02/27/2008CN100372032C Anti-ferromagnetic coupling magnetic-particle thin-film material and its preparation and application
02/27/2008CN100371990C Magnetoresistive sensor with decoupled hard bias multilayers
02/26/2008US7336556 Magnetic non-volatile memory device
02/26/2008US7336453 Magnetic sensing element including pinned layer and/or free layer composed of [110] crystal planes-oriented Heusler alloy
02/26/2008US7336451 Magnetic sensing element containing half-metallic alloy
02/26/2008US7336070 Bridge circuited magnetic sensor having magneto-resistive element and fixed resistor with the same layer configuration
02/26/2008US7336064 Apparatus for current measurement
02/26/2008US7335961 Magnetic random access memory array with coupled soft adjacent magnetic layer
02/26/2008US7335960 MRAM cell with flat topography and controlled bit line to free layer distance and method of manufacture
02/26/2008US7335317 Reaction annealing a unidirectionally solidified giant magnetostrictive material to remove a eutectic phase and create a rare earth metal phase with voids; infiltrating polymer resin into voids and curing; mechanical properties improved at high frequencies; nonfracturing, toughness, electrical resistance
02/21/2008US20080044930 Transplanted magnetic random access memory (mram) devices on thermally-sensitive substrates using laser transfer and method of making the same
02/20/2008EP1890296A2 Multi-bit magnetic random access memory device and methods of operating and sensing the same
02/20/2008EP1374310A4 Nanofabrication
02/20/2008CN101127363A Method for improving surface planarity
02/20/2008CN100370580C Semiconductor wafer and its producing method
02/20/2008CN100370522C Method and apparatus for testing tunnel magnetoresistive effect element, manufacturing method of tunnel magnetoresistive effect element and tunnel magnetoresistive effect element
02/19/2008US7333361 Biosensor and sensing cell array using the same
02/19/2008US7333359 Magnetic random access memory
02/19/2008US7333301 Magnetic recording head and method for manufacturing
02/19/2008US7332781 Magnetic memory with spin-polarized current writing, using amorphous ferromagnetic alloys, writing method for same
02/14/2008US20080036452 Portable terminal device and position detection method used therein
02/14/2008DE102006037226A1 Im Messbetrieb kalibrierbarer magnetischer 3D-Punktsensor In measurement mode calibratible Magnetic 3D point sensor
02/14/2008DE102006010652B4 Magnetfeldsensor Magnetic field sensor
02/13/2008EP1230558B1 Hall-sensor component
02/13/2008CN100369284C Magnetic tunnel conjunction element using composite ferromagnetic layer as ferromagnetic electrode
02/13/2008CN100369222C La1-xAxMnO3 thin films and heterojunction materials grown denotatively on the silicon chip and preparing method
02/13/2008CN100369117C Oxide giant magnet resistor spin valve, preparing process and its use
02/13/2008CN100369116C Magnetic head and magnetic recording/reproducing device
02/12/2008US7329935 Low power magnetoresistive random access memory elements
02/07/2008WO2008016198A1 3 axis thin film fluxgate
02/07/2008WO2008016103A1 Current amplifying device and current amplifying method
02/07/2008US20080032490 Nanocylinder arrays
02/06/2008EP1885006A1 A novel capping layer for a magnetic tunnel junction device to enhance dR/R and a method of making the same
02/06/2008EP1884747A1 Position detector and positioning device
02/06/2008CN201017910Y Indium antimonide Hall element
02/06/2008CN101118949A Circular cylinder-shaped composite material with giant magnetoelectric effect and method for making same
02/06/2008CN100367526C Hall device and magnetic sensor
02/06/2008CN100367406C Magnetic RAM using magnetic resistance effect to store information
02/06/2008CN100367405C Magnetic random access memory
02/06/2008CN100367404C Thin-film magnetic memory and related semiconductor integrated circuit component
02/06/2008CN100367355C Method and apparatus for testing tunnel magnetoresistive effect element
02/06/2008CN100367353C Magnetic tunnel junctions using amorphous materials as reference and free layers
02/06/2008CN100367352C Magnetoresistive head and magnetic recording-reproducing apparatus
02/06/2008CN100367001C Azimuth meter
02/05/2008US7327539 CPP giant magnetoresistive head with large-area metal film provided between shield and element
02/05/2008US7326982 MRAM and method of manufacturing the same
01/2008
01/30/2008CN101114694A Magnetic cell and magnetic memory
01/30/2008CN101114693A Semiconductor device using magnetic domain wall moving
01/30/2008CN100365843C Spin switch and magnetic storage element using it
01/29/2008US7323215 Making free layer in a Giant Magneto-Resistance head that measures current flowing perpendicular to the plane by depositing a layer of cobalt-iron to a thickness of 5-15 Angstroms, containing at least 25 atomic % iron, and depositing a layer of nickel-iron to a thickness of 15-50 Angstroms
01/24/2008US20080019058 Magneto-resistive effect element and magnetic memory
01/23/2008EP1654772B1 Method for manufacturing magnetic field detection devices and devices therefrom
01/23/2008CN101111763A 磁性传感器 Magnetic Sensors
01/23/2008CN101110389A Semiconductor wafer and manufacturing method therefor
01/23/2008CN100364131C Lanthanum, strontium, silver and manganese oxide magneto resistor material and preparation method thereof
01/23/2008CN100364130C C/Co/Si multilayer coating material with room temperature low field huge magnetic risistance effect
01/23/2008CN100364129C 1-3 structure huge magnetoelectric material and preparing process thereof
01/22/2008US7321508 Magnetic memory device and method for production thereof
01/22/2008US7320942 Method for removal of metallic residue after plasma etching of a metal layer
01/22/2008US7320858 Formation of combinatorial arrays of materials using solution-based methodologies
01/17/2008WO2008006337A1 Method for processing sensor signals subject to an offset and sensor arrangement designed to carry out the method
01/17/2008DE102006032277A1 Magnetfeldsensorbauelement Magnetic field sensor device
01/16/2008EP1476875B1 Mram without isolation devices
01/16/2008CN101106170A Semiconductor device using magnetic domain wall movement
01/16/2008CN101105945A Magnetoresistive effect element, magnetic head, magnetic reproducing apparatus, and manufacturing method thereof
01/16/2008CN101105944A LC resonant giant magneto-impedance effect composite wire and its preparing process
01/16/2008CN100362674C Method for mass production of plurality of magnetic sensors
01/16/2008CN100362591C Method of making magnetic memory device
01/16/2008CN100362322C Magnetic type angle sensor
01/15/2008US7319320 Rotation angle detecting device
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