| Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001) |
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| 05/08/2008 | WO2008053677A1 Write-in verifying mram |
| 05/08/2008 | US20080106826 Current-perpendicular-to-plane magnetoresistance effect device with double current double layers |
| 05/08/2008 | US20080106825 Current-perpendicular-to-plane magnetoresistance effect device with double current control layers |
| 05/08/2008 | DE102006050833A1 Magnetoresistives Sensorelement The magnetoresistive sensor element |
| 05/08/2008 | DE102004018869B4 Vorrichtung zur Erfassung der Bewegung eines bewegbaren Bauteils Device for detecting the movement of a movable component |
| 05/08/2008 | DE10046782B4 Magnetisches Bauelement mit einem magnetischen Schichtsystem und dessen Verwendung Magnetic component with a magnetic layer system and its use |
| 05/07/2008 | EP1917678A2 Magnetic devices and techniques for formation thereof |
| 05/07/2008 | CN101174670A Storage element and memory |
| 05/07/2008 | CN101174669A Magneto-resistance effect element, magnetic head, magnetic recording/reproducing device and magnetic memory |
| 05/07/2008 | CN101174420A Magneto-resistive effect device, thin-film magnetic head, head gimbal assembly, and hard disk system |
| 05/06/2008 | US7369426 Magnetoresistive memory cell with dynamic reference layer |
| 05/06/2008 | US7369031 Potentiometer |
| 05/02/2008 | WO2008050790A1 Tunnel-type magnetic detecting element and method for manufacturing the same |
| 05/01/2008 | US20080100971 Biosensor and sensing cell array using the same |
| 04/30/2008 | CN101169937A Method for promoting ferromagnetic/ antiferromagnetic exchange bias double-film performance |
| 04/30/2008 | CN100385668C Multi-crystal storage structure, method for forming said structure and semiconductor storage device using said structure |
| 04/29/2008 | US7365949 CPP giant magnetoresistive head including pinned magnetic layer that extends in the height direction |
| 04/29/2008 | US7365948 Exchange-coupled film, method for making exchange-coupled film, and magnetic sensing element including exchange-coupled film |
| 04/24/2008 | WO2008047536A1 Magnetic memory cell and magnetic random access memory |
| 04/24/2008 | US20080096051 Free layer for CPP GMR enhancement |
| 04/24/2008 | US20080094882 Non-volatile memory device |
| 04/23/2008 | EP1625589B1 Magnetoelectronics information device having a compound magnetic free layer |
| 04/23/2008 | CN100383993C Process for preparing high-linearity gallium arsenide Hall device |
| 04/22/2008 | US7362607 Solid-state memory device and method for arrangement of solid-state memory cells |
| 04/22/2008 | US7362548 Magnetic sensor and manufacturing method therefor |
| 04/22/2008 | US7360302 Manufacturing method of a magnetic sensor |
| 04/22/2008 | US7360297 Magnetoresistive sensor with antiparallel coupled lead/sensor overlap region |
| 04/17/2008 | US20080088987 Exchange-coupled film, method for making exchange-coupled film, and magnetic sensing element including exchange-coupled film |
| 04/17/2008 | US20080088981 Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system |
| 04/17/2008 | US20080087972 Copper Doped Magnetic Semiconductors |
| 04/17/2008 | DE102007032381A1 Magnetic transistor circuit, has magnetic transistors working as ordinary transistors which are turned on or turned off by control of metal devices respectively disposed around magnetic transistors |
| 04/17/2008 | DE102007032378A1 Magnettransistorschaltung, welche die Werte "1" und "0" des binären Systems darstellt Magnet transistor circuit, which represents the values "1" and "0" of the binary system |
| 04/16/2008 | EP1911096A2 Method and structure for forming slot via bitline for mram devices |
| 04/16/2008 | CN101164167A Non volatile memory cell and semiconductor memory device |
| 04/16/2008 | CN101162757A Damping control in magnetic nano-elements using ultrathin damping layer |
| 04/16/2008 | CN101162756A Magnetoresistive element and magnetic memory |
| 04/16/2008 | CN101162755A Semiconductor device and method of manufacturing the same |
| 04/16/2008 | CN100382353C Magneto-resistive effect element, magnetic head and magnetic reproducing device |
| 04/16/2008 | CN100382320C Storage matrix layer and method for programming 3D RRAM |
| 04/15/2008 | US7359163 Tunnel magnetoresistance effect device, and a portable personal device |
| 04/15/2008 | US7359162 Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system |
| 04/15/2008 | US7358846 Magnetic spin valve with a magnetoelectric element |
| 04/15/2008 | US7358723 Magnetoresistive sensor |
| 04/10/2008 | US20080085567 Tunneling magnetoresistive element, semiconductor junction element, magnetic memory and semiconductor light emitting element |
| 04/10/2008 | DE102007032379A1 Magnettransistorstruktur Magnetic transistor structure |
| 04/09/2008 | EP1396867B1 Room temperature ferromagnetic semiconductor grown by plasma enhanced molecular beam epitaxy |
| 04/09/2008 | EP1354322B1 Non orthogonal mram device |
| 04/09/2008 | CN100380524C Electric field pulse inductive resistance element and semiconductor using the same |
| 04/09/2008 | CN100380522C Magnetoresistive level generator |
| 04/09/2008 | CN100380521C Magnetic memory device, write current drive circuit, and write current drive method |
| 04/09/2008 | CN100380520C Memory device capable of stable data writing |
| 04/09/2008 | CN100380519C Magnetic random access memory with shared character lines |
| 04/09/2008 | CN100380448C Magneto-resistance effect element, magnetic head and magnetic storage device |
| 04/08/2008 | US7355825 Current-perpendicular-to-the-plane structure magnetoresistive element and head slider |
| 04/08/2008 | US7355824 Magnetoresistive effect element and magnetic memory having the same |
| 04/03/2008 | WO2007087121A3 Arrangements for an integrated sensor |
| 04/02/2008 | EP1906194A2 Magnetic current sensor |
| 04/02/2008 | EP1514274A4 Memory storage device with heating element |
| 04/02/2008 | EP0897022B1 Sputtering target |
| 04/02/2008 | CN101156047A Position detector and positioning device |
| 04/02/2008 | CN101154710A Magneto-resistance effect element, magnetic memory, magnetic head and record reproduction device |
| 04/02/2008 | CN101154709A Magneto-resistance effect device and magnetic random access memory using the same |
| 04/02/2008 | CN101154708A Tunnel magnetoresistance element, magnetic head, and magnetic memory |
| 04/02/2008 | CN101154707A Magneto-resistance effect device and magnetic random access memory using the same |
| 04/02/2008 | CN101154706A Magneto-resistance effect element, magnetic head, magnetic recording/reproducing device and magnetic memory |
| 04/02/2008 | CN101154705A Magnetic sensor and magnetic recording/reproducing apparatus |
| 04/02/2008 | CN101154388A Magnetoresistance effect element and method of producing the same |
| 04/02/2008 | CN100378865C Magnetic memory configuration |
| 04/02/2008 | CN100378864C Magnetic reluctance mode RAM circuit |
| 04/02/2008 | CN100378803C Magnetoresistive effect element, magnetic head, and magnetic recording device |
| 04/01/2008 | US7352542 Enhanced spin-valve sensor with engineered overlayer formed on a free layer |
| 04/01/2008 | US7352041 Magnetic memory device |
| 04/01/2008 | US7352021 Magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrier |
| 04/01/2008 | US7351594 Methods of forming magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrier |
| 03/27/2008 | DE10120295B4 Gerät und Prozess zur Gasphasenbeschichtung Device and process for gas-phase coating |
| 03/26/2008 | EP1903624A2 Tunnel magnetoresistive sensor in which at least part of pinned layer is composed of CoFeB layer and method for manufacturing the tunnel magnetoresistive sensor |
| 03/26/2008 | EP1903623A2 Tunnel type magnetic sensor having fixed magnetic layer of composite structure containing CoFeB film and method for manufacturing the same |
| 03/26/2008 | CN101150171A A multi-layer film material for switching bias magnetic and electric resistance sensor part |
| 03/26/2008 | CN101150170A Tunnel type magnetic sensor having fixed magnetic layer of composite structure containing CoFeB film and method for manufacturing the same |
| 03/26/2008 | CN101150169A Tunnel magnetoresistive sensor in which at least part of pinned layer is composed of CoFeB layer and method for manufacturing the tunnel magnetoresistive sensor |
| 03/25/2008 | US7349247 Multi-layer magnetic switching element comprising a magnetic semiconductor layer having magnetization induced by applied voltage |
| 03/25/2008 | US7349242 Magnetic device |
| 03/25/2008 | US7349235 Non-volatile memory device |
| 03/20/2008 | WO2008032745A1 Magnetoresistive element manufacturing method, and multi-chamber apparatus for manufacturing the magnetoresistive element |
| 03/20/2008 | WO2008032741A1 Physical quantity measuring apparatus and signal processing method thereof |
| 03/20/2008 | WO2008031725A1 Arrangement and method for operating an arrangement for detecting an inclination of a moving body |
| 03/20/2008 | US20080070339 Method for one-way coupling an input signal to an integrated circuit |
| 03/20/2008 | US20080068767 Exchange-coupled film, method for making exchange-coupled film, and magnetic sensing element including exchange-coupled film |
| 03/20/2008 | US20080068765 Magnetoresistive effect element, magnetic head and magnetic reproducing apparatus |
| 03/20/2008 | US20080068764 Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory |
| 03/20/2008 | US20080068763 Magnetic disk apparatus |
| 03/20/2008 | US20080067501 Spin transistor based on the spin-filter effect, and non-volatile memory using spin transistors |
| 03/20/2008 | US20080066294 Method to protect a GMR head from electrostatic damage during the manufacturing process |
| 03/20/2008 | DE10214159B4 Verfahren zur Herstellung einer Referenzschicht für MRAM-Speicherzellen A process for preparing a reference layer for MRAM memory cells |
| 03/19/2008 | CN101145597A Memory device using magnetic domain wall moving |
| 03/19/2008 | CN101145571A Memory device using magnetic domain wall moving |
| 03/18/2008 | US7345852 Magnetoresistive element and magnetic memory device |
| 03/18/2008 | US7345367 Magnetic memory device and producing method thereof |
| 03/18/2008 | US7343665 Method of making current-perpendicular-to-the-plane structure magnetoresistive head |
| 03/13/2008 | US20080062577 Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory |