Patents
Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
08/2008
08/28/2008US20080203504 Magneto-resistance transistor and method thereof
08/28/2008US20080202917 Method for Manufacturing a Magnetoresistive Multilayer Film
08/27/2008EP1962353A2 Joined structure of dissimilar metallic materials
08/27/2008EP1297533B1 Magnetic memory
08/27/2008CN101252166A Magnetoresistive device, magnetic head, magnetic storage apparatus, and magnetic memory
08/27/2008CN101252144A 存储器件和存储器 And a memory storage device
08/27/2008CN101252037A Magnetic thin film and magnetoresistance effect element
08/27/2008CN100414733C Method for raising anti-elactrostatic break-down ability of Hall device
08/27/2008CN100414716C Magnetic switching device and magnetic memory using the same
08/26/2008US7417269 Magnetic impedance device, sensor apparatus using the same and method for manufacturing the same
08/21/2008WO2008099822A1 Sensor chip, detecting device, and method for manufacturing detecting device
08/21/2008WO2008099626A1 Magnetoresistance effect element and magnetic random access memory
08/21/2008US20080197434 Magnetic memory device
08/20/2008EP1639653B1 Self-aligned conductive lines for fet-based magnetic random access memory devices and method of forming the same
08/20/2008EP1435091A4 Magnetic material structures, devices and methods
08/20/2008CN100412984C Magnetic random access storage device
08/20/2008CN100412950C Magnetic disk apparatus
08/19/2008US7414881 Magnetization direction control method and application thereof to MRAM
08/14/2008WO2008096700A1 Oxidation method and oxidation apparatus
08/14/2008US20080191255 Ferroelectric random access memories (frams) having lower electrodes respectively self-aligned to node conductive layer patterns and methods of forming the same
08/14/2008US20080191251 Non-Volatile Magnetic Memory with Low Switching Current and High Thermal Stability
08/13/2008EP1658614B1 Magnetic memory element utilizing spin transfer switching and storing multiple bits
08/13/2008CN101241705A Sensor shape and etching technique of CPP magnetic head for reducing capability descending
08/13/2008CN100411217C Magnetoresistance effect element, magnetic head, magnetic suspension assembly, and magnetic reproducing apparatus
08/13/2008CN100411058C Mram configuration having selection transistors with a large channel width
08/13/2008CN100410680C Fluxgate sensitive element integrated in semiconductor substrate and manufacturing method thereof
08/12/2008US7411262 Self-aligned, low-resistance, efficient memory array
08/07/2008WO2008093699A1 Magnetic sensor and its manufacturing method
08/07/2008WO2008093672A1 Magnetism detection device
08/07/2008US20080186017 Measuring Device for Angle and/or Path Measurement
08/07/2008DE102007033250A1 Integrierte Schaltung mit Magnetspeicher An integrated circuit comprising magnetic memory
08/06/2008CN101237023A Tunnel magnetoresistance effect film and magnetic device
08/06/2008CN101235457A N2O doping p-type Zn1-xCoxO diluted magnetic semi-conductor thin film and preparation method thereof
08/06/2008CN100409382C Method for homogeneously magnetizing an exchange-coupled layer system of a digital magnetic memory location device
08/06/2008CN100409379C Crystal size-controllable polycrystalline Fe3O4 thin-film material and its preparation method
08/06/2008CN100409363C Data storage device and manufacturing method thereof
08/06/2008CN100409315C Method and apparatus for providing a magnetic tunnel transistor with a self-pinned emitter
08/06/2008CN100409314C Fabrication of self-aligned reflective/protective overlays on magnetoresistance sensors, and the sensors
08/06/2008CN100409313C Enhanced spin-valve sensor with engineered overlayer
08/05/2008US7408803 Method for writing to magnetoresistive memory cells and magnetoresistive memory which can be written to by the method
08/05/2008US7407596 Fluxgate sensor integrated in printed circuit board and method for manufacturing the same
07/2008
07/31/2008WO2008090696A1 Magnetoresistive element and magnetic storage device
07/31/2008US20080180085 Magnetic device and frequency analyzer
07/31/2008US20080179699 Novel magnetic tunnel junction (MTJ) to reduce spin transfer magnetization switching current
07/31/2008DE102007003382A1 Sensor for detecting magnetic field of e.g. shaft, has flexible substrate, where flexible magnetic resistive elements are arranged one above other and applied on substrate on basis of organic semiconductor materials e.g. polymer materials
07/30/2008EP1949466A1 A magnetoresistive tunnel junction magnetic device and its application to mram
07/30/2008CN101233578A Semiconductor memory
07/30/2008CN101232073A Magnetoresistive element and magnetic memory
07/30/2008CN101231881A Shared global word line magnetic random access memory
07/30/2008CN100407470C 磁开关元件和磁存储器 A magnetic switching element and the magnetic memory
07/30/2008CN100407333C 非直角磁性随机存取存储器装置 Non-rectangular magnetic random access memory device
07/30/2008CN100406906C 使用印刷电路板制造技术的弱磁场传感器及其制造方法 Using printed circuit board manufacturing technology and the manufacturing method of a weak magnetic field sensor
07/29/2008US7405958 Magnetic memory device having XP cell and Str cell in one chip
07/29/2008US7405906 Current-perpendicular-to-plane magnetoresistance effect device with double current control layers
07/29/2008US7405087 Magnetic memory device and method of manufacturing the same
07/29/2008US7405085 Amorphous soft magnetic shielding and keeper for MRAM devices
07/24/2008WO2008088021A1 Magnetic sensor element and method for manufacturing the same
07/24/2008WO2008087345A2 Multilayer magnetic device, process for the production thereof, magnetic field sensor, magnetic memory and logic gate using such a device
07/24/2008US20080174400 Magnetically-and electrically-induced variable resistance materials and method for preparing same
07/24/2008US20080174300 Hall-effect pressure switch
07/24/2008US20080173961 Semiconductor device, magnetic sensor, and magnetic sensor unit
07/23/2008CN100405500C Magnetic memory device
07/23/2008CN100405462C Magnetoresistive element, magnetoresistive head, magnetic recording apparatus, and magnetic memory
07/22/2008US7402879 Layered magnetic structures having improved surface planarity for bit material deposition
07/22/2008US7402833 Multilayer dielectric tunnel barrier used in magnetic tunnel junction devices, and its method of fabrication
07/17/2008WO2008084798A1 Electronic apparatus with rotary section
07/17/2008US20080168649 Magnetic recording element and method of manufacturing magnetic recording element
07/16/2008EP1943727A2 Radio-frequency oscillator with spin-polarised electric current
07/16/2008EP1269552B1 Hall-effect element with integrated offset control and method for operating hall-effect element to reduce null offset
07/16/2008CN101222018A Magnetoresistive element
07/16/2008CN101222017A Magnetoresistive element
07/16/2008CN100403572C Magnetoelectric transducer and its manufacturing method
07/16/2008CN100403447C MRAM write apparatus and method
07/16/2008CN100403445C MRAM with midpoint generator reference
07/16/2008CN100403402C Evaluation method of film magnetic head
07/16/2008CN100403050C Strong magnetic impedance magnetic field sensor
07/16/2008CN100403049C Thin film magnetic sensor and method of manufacturing the same
07/15/2008US7400141 Magnetic type angle sensor
07/15/2008US7400139 Contactless Hall-effect angular position sensor
07/15/2008US7400137 Magnetic encoder having a stable output property with unsaturated magnetic sensor
07/09/2008EP1942504A1 Magnetic domain data storage devices and methods of manufacturing the same
07/09/2008EP1941560A1 Spintronics components without non-magnetic interlayers
07/09/2008CN101217182A 2-2 type ferroelectrics-ferrite multilayered compound magnetoelectricity material and the corresponding preparation method
07/09/2008CN101217181A Magnetic domain data storage devices and methods of manufacturing the same
07/09/2008CN100401433C Preparation method and use of polycrystalline FeO thin-film materials
07/09/2008CN100401423C Magnetic resistance type random access internal storage circuit
07/08/2008US7397236 Magnetic detector
07/08/2008US7397099 Method of forming nano-sized MTJ cell without contact hole
07/03/2008WO2008078745A1 Method of magnetic detection and magnetic detector
07/03/2008US20080160643 Magnetic Random Access Memory Cells Having Split Subdigit Lines Having Cladding Layers Thereon and Methods of Fabricating the Same
07/03/2008US20080160184 Reliably suppressing offset variations of bridge connections in giant magnetoresistive elements
07/03/2008US20080158737 Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system
07/03/2008US20080157758 Magnetic error proofing of sensors
07/03/2008US20080157754 Swivel portable terminal
07/03/2008US20080157239 Magnetic Memory Device and Method for Manufacturing the Same
07/03/2008DE102007060845A1 Current sensor comprises conductor, through which current flows, where circular screen disc is arranged around direction of flow of current in conductor, and current sensor has magneto electronic conversion element
07/02/2008CN101212018A Storage element and memory
07/02/2008CN101212017A High magneto-resistance magnetic sensor and method for producing the magnetic sensor
07/02/2008CN101212016A Complementary metal oxide layer semiconductor magnetic sensor
07/02/2008CN101211652A Information storage devices using magnetic domain wall movement and methods of manufacturing the same
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