Patents
Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
07/2008
07/02/2008CN100399474C Magnetic random access memory with asymmetric clad conductor
07/02/2008CN100399423C Magnetic detecting element having rie-resistant film and method of manufacturing the same
07/01/2008US7394626 Magnetoresistance device with a diffusion barrier between a conductor and a magnetoresistance element and method of fabricating the same
07/01/2008US7394244 Through-wall position sensor
07/01/2008US7394122 Magnetic random access memory array with thin conduction electrical read and write lines
07/01/2008US7394086 Magnetic sensor and manufacturing method therefor
06/2008
06/26/2008WO2008075610A1 Magnetic detector
06/26/2008US20080150643 Microwave Transmission Line Integrated Microwave Generating Element and Microwave Transmission Line Integrated Microwave Detecting Element
06/26/2008US20080150520 Distance Measuring Device
06/25/2008EP1935041A1 Method for making a magneto-impedance sensor
06/25/2008EP1269491B1 Multi-layer tunneling device with a graded stoichiometry insulating layer and method of manufacture
06/25/2008CN101207180A Multi-layer electrode structure
06/25/2008CN101207177A Magnetoresistive device, film head and disc driving equipment
06/25/2008CN101207176A Information storage devices using movement of magnetic domain wall and methods of manufacturing the same
06/25/2008CN101206914A Information storage devices using magnetic domain wall movement and methods of manufacturing the same
06/25/2008CN101206866A Magnetic head and magnetic disk apparatus
06/25/2008CN100397674C Magnetic controlled resistance storage device with magnetic field attenuation layer
06/24/2008US7391208 Rotary position sensor
06/24/2008US7391207 Rotation angle detector
06/24/2008US7390584 Spin dependent tunneling devices having reduced topological coupling
06/24/2008US7390529 magnetic heads having current flowing perpendicular to the plane (CPP) and giant magnetoresistance (GMR), comprising alloy multilayers separated by an antiferromagnetic coupling layer; improved stability, performance and acceptable magnetostriction
06/19/2008WO2008073760A1 Organic spin transport device
06/19/2008WO2008072479A1 Nanowire, device comprising nanowire, and their production methods
06/19/2008WO2008072421A1 Magnetoresistance effect element and mram
06/19/2008US20080145956 Method for manufacturing magnetic sensor apparatus
06/19/2008US20080145523 Manufacturing magnetic sensor by forming antiferromagnetic layer on substrate, forming fixed magnetic layer, forming nonmagnetic interlayer, and forming second fixed magnetic layer, formation of second fixed magnetic layer comprising forming nonmagnetic noncontact-material layer, oxidizing
06/19/2008US20080144233 Tunnel magnetoresistance effect device, and a portable personal device
06/19/2008US20080142915 Ferroelectric memory device and fabrication process thereof, fabrication process of a semiconductor device
06/19/2008US20080142156 laminating an antiferromagnetic layer, a pinned-magnetization layer, a nonmagnetic spacer layer and a free-magnetization layer; sputtering; argon; oxygen; film for the antiferromagnetic layer is made of PtMn alloy or IrMn alloy; magnetic heads; reduce roughness of an interface
06/18/2008CN101203769A Magnetic sensor and manufacturing method thereof
06/18/2008CN101202325A Magnetic storage element and memory
06/18/2008CN101202103A Data copying apparatus, data copying system, recording medium and data copying method
06/17/2008US7388268 Compound semiconductor multilayer structure, hall device, and hall device manufacturing method
06/12/2008WO2008068967A1 Magnetic random access memory, and its manufacturing method
06/12/2008US20080137405 Current Injection Magnetic Domain Wall Moving Element
06/12/2008US20080135959 Semiconductor component comprising magnetic field sensor
06/12/2008DE102006057970A1 Semiconductor component for folding telephones or doors, has semiconductor chip, which is designed as wafer-level-package, into which magnetic field sensor is integrated and magnet is applied on main surface of semiconductor chip
06/11/2008EP1929148A2 Variable reluctance position sensor
06/11/2008CN100394628C 磁电阻元件 Magnetoresistive element
06/11/2008CN100394580C Storage device amd method for forming storage
06/10/2008US7385790 CPP-type giant manetoresistance effect element and magnetic component and magnetic device using it
06/10/2008US7383626 Methods for fabricating giant magnetoresistive (GMR) devices
06/05/2008WO2008066118A1 Thin film laminated body, thin film magnetic sensor using the thin film laminated body and method for manufacturing the thin film laminated body
06/04/2008CN101192646A Spinning moment transferring written magnetic random access memory and its manufacture method
06/04/2008CN101192645A Metal multiple layer film hall device and method for making same
06/04/2008CN100392775C Magnetic-particle thin-film material and its preparation method and application
06/04/2008CN100392774C Semimetal magnetic material with high spinning polarizability
06/03/2008US7382122 Magnetic sensor
06/03/2008US7381573 Self-aligned, low-resistance, efficient memory array
05/2008
05/29/2008WO2008062686A1 Mram
05/29/2008US20080121945 Magnetic switching element and a magnetic memory
05/29/2008DE102006037226B4 Im Messbetrieb kalibrierbarer magnetischer 3D-Punktsensor In measurement mode calibratible Magnetic 3D point sensor
05/28/2008EP1926158A1 Method and apparatus for manufacturing magnetoresistive device
05/28/2008EP1925946A2 Tunnel magnetoresistance element
05/28/2008CN101188271A Data storage device having magnetic domain wall motion and method of forming the same
05/28/2008CN100390899C MRAM without isolation devices
05/28/2008CN100390898C Reluctance memory made on common base plate, and its operation method
05/28/2008CN100390897C Megnetic memory and its manufacturing method
05/28/2008CN100390895C Word line electronic drive circuit of memory matrix and memory equipment
05/28/2008CN100390859C Spin valve and making method thereof
05/28/2008CN100390561C Semiconductor element comprising semimagnetic contact
05/27/2008US7379800 Tire pressure monitoring using hall effect sensors
05/27/2008US7379366 Thin film magnetic memory device capable of conducting stable data read and write operations
05/27/2008US7379326 Large-capacity magnetic memory using carbon nano-tube
05/27/2008US7379280 Magnetic tunnel magneto-resistance device and magnetic memory using the same
05/27/2008US7379279 Magnetoresistive film with pinning layer interposed between pinned layer and soft magnetic nickel iron alloy layer
05/27/2008US7379278 Magnetoresistance effect element, having a nonmagnetic intermediate layer having a two-dimensional fluctuation of resistance
05/27/2008US7378716 Magnetic tunneling junction cell having a free magnetic layer with a low magnetic moment and magnetic random access memory having the same
05/27/2008US7378699 Magnetic head having a magnetoresistive element and highly polarized spin injection layer
05/27/2008US7378698 Magnetic tunnel junction and memory device including the same
05/27/2008US7377026 Method of making current-perpendicular-to-the-plane structure magnetoresistive element
05/22/2008WO2008059915A1 Magnetic detecting device, and its manufacturing method
05/22/2008WO2008059914A1 Magnetic detector and electronic apparatus employing it
05/22/2008WO2008059913A1 Magnetoresistance effect element, magnetic sensor and method for manufacturing magnetoresistance effect element
05/22/2008US20080118993 Method of manufacturing magnetic random access memory (MRAM)
05/22/2008US20080117670 Thin film magnetic memory device including memory cells having a magnetic tunnel junction
05/22/2008US20080116886 Displacement Sensor Using GMR Elements, Angle Sensor Using GMR Elements, And Semiconductor Device Used For Them
05/21/2008CN101183704A Tunneling magnetoresistance device, its manufacture method, magnetic head and magnetic memory using tmr device
05/21/2008CN101183607A Method of producing zinc oxide Fe-doped rare magnetic semiconductor material
05/21/2008CN101183595A P type doping ZnO based rare magnetic semiconductor material and method of producing the same
05/21/2008CN100389506C Manganese oxide heterogeneous film and its preparing method
05/20/2008US7376801 Power saving data storage circuit, data writing method in the same, and data storage device
05/20/2008US7376005 Thin film magnetic memory device including memory cells having a magnetic tunnel junction
05/20/2008US7376004 Increased magnetic memory array sizes and operating margins
05/20/2008US7376003 Magnetic random access memory
05/20/2008US7375405 Magnetoresistance effect element, magnetic head, and magnetic storage system using a giant magnetoresistance effect element
05/20/2008US7375388 Device having improved surface planarity prior to MRAM bit material deposition
05/20/2008US7374952 Methods of patterning a magnetic stack of a magnetic memory cell and structures thereof
05/15/2008US20080112092 Method and Apparatus For Oxidizing Conductive Redeposition in TMR Sensors
05/15/2008US20080111565 Concept of compensating for piezo influences on integrated circuitry
05/14/2008EP1601629B1 Ferromagnetic material
05/14/2008EP1454324B1 Segmented write line architecture
05/14/2008CN100388523C Magnetic field sensor comprising Hall element
05/14/2008CN100388386C Compensation method of a bias magnetic field in a storage surface of a magnetoresistive storage cell, and semiconductor device
05/14/2008CN100388358C Method and apparatus for manufacturing magnetoresistive element
05/13/2008US7372672 GMR magnetic sensing element having an antiferromagnetic layer extending beyond the track width and method for making the same
05/13/2008US7372119 Cross-shaped Hall device having extensions with slits
05/13/2008US7372117 Magneto-resistance transistor and method thereof
05/08/2008WO2008053939A1 Rotation angle detection device
05/08/2008WO2008053928A1 Rotation angle detection device
1 ... 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 ... 121