Patents
Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
10/2008
10/29/2008EP1984963A1 Magnetic field sensing element
10/29/2008EP1166191B1 Temperature control system
10/29/2008CN101295763A Resistive memory device and stack structure of resistive random access memory device
10/29/2008CN100429799C Magnetic inductor and its manufacturing method
10/29/2008CN100429798C Hall circuitboard for DC brushless electric machine
10/28/2008US7443707 Magnetic random access memory array with free layer locking mechanism and method of its use
10/28/2008US7443004 Magnetoresistance effect element, magnetic head and magnetic reproducing apparatus
10/28/2008US7442665 Forming intermetallics, alloy, ceramic or composite
10/28/2008US7441326 Manufacturing method of a magnetic sensor
10/23/2008US20080261331 Mram and method of manufacturing the same
10/23/2008DE112006003218T5 Filmherstellvorrichtung und Verfahren zum Herstellen eines Films Filmherstellvorrichtung and method for producing a film
10/22/2008EP1911096A4 Method and structure for forming slot via bitline for mram devices
10/22/2008CN101292370A Spintronics components without non-magnetic interlayers
10/21/2008US7440861 Concept of compensating for piezo influences on integrated circuitry
10/21/2008US7440240 Magnetic head with domain stabilization and magnetic recording/reproducing apparatus using the same
10/21/2008US7440239 Magneto-resistance effect element and reproducing head
10/16/2008WO2008123141A1 Compound semiconductor laminate, process for producing the compound semiconductor laminate, and semiconductor device
10/16/2008WO2008123023A1 Spin relaxation/change method, spin current detection method, and spintronics device utilizing spin relaxation
10/16/2008US20080253176 Nonvolatile magnetic memory device and photomask
10/16/2008US20080253175 Nonvolatile magnetic memory device and photomask
10/15/2008CN101288186A A magnetoresistive tunnel junction magnetic device and its application to MRAM
10/15/2008CN101286545A Compound film hetero-junction having magnetoelectric effect and preparing method thereof
10/14/2008US7437260 Concept of compensating for piezo influences on integrated circuitry
10/09/2008WO2008120482A1 Magnetic random access memory
10/09/2008WO2008120320A1 Thin film magnetic head, method for fabricating the same and magnetic recorder
10/09/2008US20080247097 Magnetoresistance effect element and magnetic head
10/09/2008US20080246103 MR device with surfactant layer within the free layer
10/08/2008EP1977460A1 Vertical hall sensor element
10/08/2008EP1358655B1 Mram architecture and system
10/08/2008CN100424783C Every storage unit having multiple bit magnetic storage device
10/08/2008CN100424753C Magnetoresistive structures
10/07/2008US7433161 Spin-valve element having fixed layer containing nano-oxide layer
10/07/2008US7433153 Soft magnetic film and thin film magnetic head using soft magnetic film, process for manufacturing soft magnetic film and process for manufacturing thin film magnetic head
10/07/2008US7432573 Surface-spintronics device
10/02/2008WO2008117354A1 Magnetoresistance effect device and, equipped therewith, magnetic head, magnetic recording apparatus and magnetic memory unit
10/02/2008WO2008116883A1 Semiconductor component with integrated hall effect sensor
10/02/2008US20080241596 Magnetoresistive Multilayer Film
10/02/2008DE102007034803A1 Integrierter Hall-Effekt-Sensor Integrated Hall-effect sensor
10/01/2008EP1974223A2 Arrangements for an integrated sensor
10/01/2008CN101276879A Double freedom layer vertical ferromagnetism tunnel junction structure
10/01/2008CN101276878A Magneto-resistance effect element, and method for manufacturing the same
10/01/2008CN101276877A Method for producing high-precision hall remote-rod potentiometer
10/01/2008CN101276670A Surface adhesion type magnetic element
10/01/2008CN100423313C Magnetoresistive device with exchange-coupled structure having half-metallic ferromagnetic heusler alloy in the pinned layer
10/01/2008CN100423233C Method of fabricating nano-scale resistance cross-point memory array and device
10/01/2008CN100423084C Tunneling magnetic sensing element having two-layer insulating film and method for fabricating same
09/2008
09/30/2008US7429980 Oscillation and rotation metric controller
09/30/2008US7429779 Semiconductor device having gate electrode connection to wiring layer
09/25/2008WO2008114615A1 Position sensing device employing magnetorestive effect element
09/25/2008US20080230819 Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plan equilibrium magnetization
09/24/2008EP1973178A2 Magnetoresistance effect device and method of production of the same
09/24/2008CN101273194A Variable reluctance position sensor
09/24/2008CN101271958A Magnetoresistance effect device, magnetic lamination structural body, and manufacture method for magnetic lamination structural body
09/24/2008CN100420953C Reluctance sensor
09/23/2008US7428128 High read output, high sensitivity magnetic sensing element
09/23/2008US7428127 CPP magnetoresistive effect element and magnetic storage device having a CPP magnetoresistive effect element
09/23/2008US7427860 Module to control a rotating output shaft and a module to change a driving condition of vehicle
09/18/2008WO2008111336A1 Magnetic coupler element and magnetic coupling type isolator
09/18/2008US20080225586 Low Magnetization Materials for High Performance Magnetic Memory Devices
09/18/2008US20080225582 Thin film magnetic memory device capable of conducting stable data read and write operations
09/18/2008US20080224194 Semiconductor device and fabrication process thereof
09/18/2008DE102007037845A1 Magnetorestive Sensorvorrichtung Magne Goals scopes sensor device
09/17/2008EP1454321B1 Asymmetric mram cell and bit design for improving bit yield
09/17/2008CN101266831A Memory device and memory
09/17/2008CN100419905C Magnetic random access memory device having thermal agitation property and high write efficiency
09/17/2008CN100419902C Synthetic ferromagnet reference layer for magnetic storage device
09/16/2008US7426098 Magnetoresistive element having three-layer buffer layer, magnetic head, magnetic reproducing apparatus, and magnetic memory
09/16/2008US7426096 Magnetoresistive effective element with high output stability and reduced read bleeding at track edges
09/16/2008US7425456 Antiferromagnetic stabilized storage layers in GMRAM storage devices
09/12/2008WO2008108387A1 Magnetic sensor device having multiple sensing axes
09/12/2008WO2008108264A1 Semiconductor device, its manufacturing method, and magnetic memory element
09/12/2008WO2008108111A1 Magnetic body device and magnetic storage device
09/12/2008WO2008108109A1 Magnetic memory cell and magnetic random access memory
09/12/2008WO2008108108A1 Magnetic random access memory
09/11/2008US20080217710 Novel SyAF structure to fabricate Mbit MTJ MRAM
09/10/2008EP1968130A2 A novel SyAF structure to fabricate Mbit MTJ MRAM
09/10/2008EP1968129A1 InSb THIN FILM MAGNETIC SENSOR AND FABRICATION METHOD THEREOF
09/10/2008EP1117136B1 Ferromagnetic double quantum well tunneling magnetoresistance device
09/10/2008CN201112422Y General device for three-legged hall element
09/10/2008CN101263580A Transplanted magnetic random access memory (MRAM) devices on thermally-sensitive substrates using laser transfer and method of making the same
09/10/2008CN101262040A Oxide lanthanon magnetic semiconductor/ferroelectric heterogeneous structure and its making method
09/09/2008US7423851 Magneto-resistive element and device being provided with magneto-resistive element having magnetic nano-contact
09/09/2008US7423848 Process and structure to fabricate CPP spin valve heads for ultra-high recording density
09/09/2008US7423420 Magnetic field-sensitive sensor
09/09/2008US7423329 Semiconductor device and magneto-resistive sensor integration
09/09/2008US7423328 Method for reducing word line current in magnetoresistive random access memory and structure thereof
09/09/2008US7423327 Spin transistor based on the spin-filter effect and a non-volatile memory using spin transistors
09/09/2008US7422912 Magnetic memory device and methods for making same
09/04/2008WO2008105372A1 Method for manufacturing magnetic storage device and magnetic storage device
09/04/2008WO2008105315A1 Method for manufacturing magnetic memory chip device
09/04/2008US20080211055 Utilizing Sidewall Spacer Features to Form Magnetic Tunnel Junctions in an Integrated Circuit
09/04/2008DE112004000661T5 Integrierte Schaltung mit einem magnetisch ummantelten Leiter An integrated circuit comprising a magnetically coated conductor
09/03/2008CN101257082A Lndium antimonide Hall element as well as manufacturing method thereof
09/03/2008CN100416698C MRAM architectures for increased write selectivity
09/03/2008CN100416697C Storage apparatus capable of prolixity displacement and high-speed reading-out
09/02/2008US7418777 Method on manufacturing spin valve film
08/2008
08/28/2008WO2008102786A1 Magnetometric sensor
08/28/2008WO2008102650A1 Semiconductor storage device
08/28/2008WO2008102499A1 Magnetic substance device, and magnetic random access memory
08/28/2008WO2008102498A1 Magnetic device and magnetic storage device
1 ... 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 ... 121